KR102045393B1 - 기판의 온도를 판정하기 위한 장치 및 기판을 열처리하기 위한 방법 - Google Patents

기판의 온도를 판정하기 위한 장치 및 기판을 열처리하기 위한 방법 Download PDF

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KR102045393B1
KR102045393B1 KR1020147029081A KR20147029081A KR102045393B1 KR 102045393 B1 KR102045393 B1 KR 102045393B1 KR 1020147029081 A KR1020147029081 A KR 1020147029081A KR 20147029081 A KR20147029081 A KR 20147029081A KR 102045393 B1 KR102045393 B1 KR 102045393B1
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radiation
substrate
temperature
determining
pyrometer
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KR20140140081A (ko
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하르트무트 리크
빌프리트 레르히
유르겐 니쓰
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센트로테에름 인터내셔널 아게
에이치큐-디일렉트릭스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0275—Control or determination of height or distance or angle information for sensors or receivers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/07—Arrangements for adjusting the solid angle of collected radiation, e.g. adjusting or orienting field of view, tracking position or encoding angular position
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0801—Means for wavelength selection or discrimination
    • G01J5/0802—Optical filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
KR1020147029081A 2012-03-16 2013-03-15 기판의 온도를 판정하기 위한 장치 및 기판을 열처리하기 위한 방법 Active KR102045393B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012005428.9 2012-03-16
DE102012005428.9A DE102012005428B4 (de) 2012-03-16 2012-03-16 Vorrichtung zum Bestimmen der Temperatur eines Substrats
PCT/EP2013/000807 WO2013135394A1 (de) 2012-03-16 2013-03-15 Vorrichtung zum bestimmen der temperatur eines substrats

Publications (2)

Publication Number Publication Date
KR20140140081A KR20140140081A (ko) 2014-12-08
KR102045393B1 true KR102045393B1 (ko) 2019-11-15

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KR1020147029081A Active KR102045393B1 (ko) 2012-03-16 2013-03-15 기판의 온도를 판정하기 위한 장치 및 기판을 열처리하기 위한 방법

Country Status (6)

Country Link
US (1) US9805993B2 (https=)
EP (1) EP2825859B1 (https=)
JP (1) JP6114762B2 (https=)
KR (1) KR102045393B1 (https=)
DE (1) DE102012005428B4 (https=)
WO (1) WO2013135394A1 (https=)

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
US10636934B2 (en) 2015-09-23 2020-04-28 centrotherm international AG Method and device for passivating defects in semiconductor substrates
WO2020005366A1 (en) 2018-06-26 2020-01-02 Applied Materials, Inc. Method and apparatus for measuring temperature
WO2020068338A1 (en) * 2018-09-24 2020-04-02 Applied Materials, Inc. Atomic oxygen and ozone device for cleaning and surface treatment
CN110124837B (zh) * 2019-05-17 2021-04-23 西安奕斯伟硅片技术有限公司 一种硅晶体的破碎方法及热处理装置
JP7370763B2 (ja) * 2019-08-22 2023-10-30 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP7338441B2 (ja) * 2019-12-13 2023-09-05 ウシオ電機株式会社 光加熱装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000047962A1 (de) 1999-02-10 2000-08-17 Steag Rtp Systems Gmbh Vorrichtung und verfahren zum messen der temperatur von substraten
US20020066859A1 (en) 1998-03-19 2002-06-06 Tomomi Ino Temperature measuring method and apparatus, measuring mehtod for the thickness of the formed film, measuring apparatus for the thickness of the formed film thermometer for wafers
WO2008003080A2 (en) 2006-06-29 2008-01-03 Mattson Technology, Inc. Methods for determining wafer temperature

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JPH01124726A (ja) * 1987-11-09 1989-05-17 Toshiba Corp 加熱装置
US4919542A (en) * 1988-04-27 1990-04-24 Ag Processing Technologies, Inc. Emissivity correction apparatus and method
US5154512A (en) * 1990-04-10 1992-10-13 Luxtron Corporation Non-contact techniques for measuring temperature or radiation-heated objects
KR940703996A (ko) * 1992-11-03 1994-12-12 알.밴 오버스트래텐 가열챔버내 물체의 가열 조정방법 및 그 장치(System For The Controlled Heating Of An Object)
US5624590A (en) * 1993-04-02 1997-04-29 Lucent Technologies, Inc. Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique
US6179466B1 (en) * 1994-12-19 2001-01-30 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US5660472A (en) * 1994-12-19 1997-08-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6183130B1 (en) * 1998-02-20 2001-02-06 Applied Materials, Inc. Apparatus for substrate temperature measurement using a reflecting cavity and detector
JP2000105152A (ja) * 1998-09-29 2000-04-11 Toshiba Corp 温度測定方法及びその装置
JP2002015982A (ja) * 2000-06-30 2002-01-18 Ibiden Co Ltd 赤外線温度センサ付きホットプレート
DE10032465A1 (de) * 2000-07-04 2002-01-31 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Objekten
US6849831B2 (en) * 2002-03-29 2005-02-01 Mattson Technology, Inc. Pulsed processing semiconductor heating methods using combinations of heating sources
US7734439B2 (en) * 2002-06-24 2010-06-08 Mattson Technology, Inc. System and process for calibrating pyrometers in thermal processing chambers
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US7642205B2 (en) * 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
JP4864396B2 (ja) * 2005-09-13 2012-02-01 株式会社東芝 半導体素子の製造方法、及び、半導体素子の製造装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020066859A1 (en) 1998-03-19 2002-06-06 Tomomi Ino Temperature measuring method and apparatus, measuring mehtod for the thickness of the formed film, measuring apparatus for the thickness of the formed film thermometer for wafers
WO2000047962A1 (de) 1999-02-10 2000-08-17 Steag Rtp Systems Gmbh Vorrichtung und verfahren zum messen der temperatur von substraten
WO2008003080A2 (en) 2006-06-29 2008-01-03 Mattson Technology, Inc. Methods for determining wafer temperature

Also Published As

Publication number Publication date
WO2013135394A1 (de) 2013-09-19
US9805993B2 (en) 2017-10-31
DE102012005428A1 (de) 2013-09-19
DE102012005428B4 (de) 2014-10-16
KR20140140081A (ko) 2014-12-08
JP2015513094A (ja) 2015-04-30
JP6114762B2 (ja) 2017-04-12
US20150087085A1 (en) 2015-03-26
EP2825859B1 (de) 2022-10-19
EP2825859A1 (de) 2015-01-21

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