DE102011083223A8 - Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte - Google Patents

Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte Download PDF

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Publication number
DE102011083223A8
DE102011083223A8 DE102011083223A DE102011083223A DE102011083223A8 DE 102011083223 A8 DE102011083223 A8 DE 102011083223A8 DE 102011083223 A DE102011083223 A DE 102011083223A DE 102011083223 A DE102011083223 A DE 102011083223A DE 102011083223 A8 DE102011083223 A8 DE 102011083223A8
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Germany
Prior art keywords
circuit board
power semiconductor
semiconductor module
film circuit
integrated thick
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Granted
Application number
DE102011083223A
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English (en)
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DE102011083223A1 (de
DE102011083223B4 (de
Inventor
Ulrich Michael Georg Schwarzer
Daniel Bolowski
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Infineon Technologies AG
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Infineon Technologies AG
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Priority to DE102011083223.8A priority Critical patent/DE102011083223B4/de
Priority to CN201210353742.3A priority patent/CN103021967B/zh
Priority to US13/623,994 priority patent/US8981553B2/en
Publication of DE102011083223A1 publication Critical patent/DE102011083223A1/de
Publication of DE102011083223A8 publication Critical patent/DE102011083223A8/de
Application granted granted Critical
Publication of DE102011083223B4 publication Critical patent/DE102011083223B4/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13062—Junction field-effect transistor [JFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Geometry (AREA)
  • Ceramic Engineering (AREA)
  • Structure Of Printed Boards (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE102011083223.8A 2011-09-22 2011-09-22 Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte Active DE102011083223B4 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE102011083223.8A DE102011083223B4 (de) 2011-09-22 2011-09-22 Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte
CN201210353742.3A CN103021967B (zh) 2011-09-22 2012-09-21 具有集成的厚膜印制电路板的功率半导体模块
US13/623,994 US8981553B2 (en) 2011-09-22 2012-09-21 Power semiconductor module with integrated thick-film printed circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102011083223.8A DE102011083223B4 (de) 2011-09-22 2011-09-22 Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte

Publications (3)

Publication Number Publication Date
DE102011083223A1 DE102011083223A1 (de) 2013-03-28
DE102011083223A8 true DE102011083223A8 (de) 2013-04-25
DE102011083223B4 DE102011083223B4 (de) 2019-08-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011083223.8A Active DE102011083223B4 (de) 2011-09-22 2011-09-22 Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte

Country Status (3)

Country Link
US (1) US8981553B2 (de)
CN (1) CN103021967B (de)
DE (1) DE102011083223B4 (de)

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US9576930B2 (en) * 2013-11-08 2017-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Thermally conductive structure for heat dissipation in semiconductor packages
DE102013114438A1 (de) 2013-12-19 2015-06-25 Karlsruher Institut für Technologie Leistungselektronikmodul und Verfahren zur Herstellung eines Leistungselektronikmoduls
DE102014101238A1 (de) 2014-01-31 2015-08-06 Hs Elektronik Systeme Gmbh In Leiterplatten eingebettetes Leistungsmodul
DE102014203310A1 (de) * 2014-02-25 2015-08-27 Siemens Aktiengesellschaft Elektronikmodul
US10600718B1 (en) * 2014-12-03 2020-03-24 Ii-Vi Delaware, Inc. Heat sink package
DE102015101086B4 (de) * 2015-01-26 2018-04-12 Infineon Technologies Ag Leistungshalbleitermodulanordnung
US20180315679A1 (en) * 2015-10-07 2018-11-01 Ceramtec Gmbh Circuit cooled on two-sides
US10600764B2 (en) 2016-06-01 2020-03-24 Rohm Co., Ltd. Semiconductor power module
JP6493317B2 (ja) * 2016-06-23 2019-04-03 三菱電機株式会社 半導体装置
CN106601701B (zh) * 2017-01-19 2023-03-28 贵州煜立电子科技有限公司 大功率二端表面引出脚电子元器件立体封装方法及结构
KR20190137086A (ko) * 2017-04-06 2019-12-10 세람테크 게엠베하 2개의 측들 상에서 냉각되는 회로
US10141303B1 (en) * 2017-09-20 2018-11-27 Cree, Inc. RF amplifier package with biasing strip
CN111279476B (zh) * 2017-10-27 2023-10-17 日产自动车株式会社 半导体装置
DE102017221861A1 (de) * 2017-12-05 2019-06-06 Zf Friedrichshafen Ag Leiterplatte und Verfahren zur Fertigung einer Leiterplatte
US10916931B2 (en) * 2018-01-15 2021-02-09 Infineon Technologies Ag Temperature sensing and fault detection for paralleled double-side cooled power modules
EP3547360A1 (de) * 2018-03-29 2019-10-02 Siemens Aktiengesellschaft Halbleiterbaugruppe und verfahren zur herstellung der halbleiterbaugruppe
EP3761357A1 (de) * 2019-07-04 2021-01-06 Infineon Technologies Austria AG Halbleiterbauelement
EP3770962A1 (de) * 2019-07-26 2021-01-27 Infineon Technologies AG Halbleitermodulanordnung
US11147165B2 (en) 2019-10-17 2021-10-12 Infineon Technologies Austria Ag Electronic system and interposer having an embedded power device module
US11183934B2 (en) 2019-10-17 2021-11-23 Infineon Technologies Americas Corp. Embedded substrate voltage regulators
US11071206B2 (en) * 2019-10-17 2021-07-20 Infineon Technologies Austria Ag Electronic system and processor substrate having an embedded power device module
DE102019132685B4 (de) * 2019-12-02 2022-05-25 Audi Ag Elektrische Schaltungsanordnung umfassend eine Erregerschaltung und eine Inverterschaltung und Kraftfahrzeug
CN113314481B (zh) * 2020-02-27 2023-01-24 光宝电子(广州)有限公司 晶体管散热模块及其组装方法
US20230275010A1 (en) * 2020-07-06 2023-08-31 Amosense Co., Ltd Power module
DE102022109792B4 (de) 2022-04-22 2024-05-29 Dr. Ing. H.C. F. Porsche Aktiengesellschaft Leistungshalbleitermodul
DE102022120293A1 (de) 2022-08-11 2024-02-22 Rolls-Royce Deutschland Ltd & Co Kg Verfahren zur Herstellung einer Leiterplattenanordnung
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JPH05175407A (ja) * 1991-12-25 1993-07-13 Sumitomo Bakelite Co Ltd 半導体搭載基板
US20020191383A1 (en) * 1998-05-04 2002-12-19 Corisis David J. Stackable ball grid array package
US6265772B1 (en) * 1998-06-17 2001-07-24 Nec Corporation Stacked semiconductor device
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US20090116197A1 (en) * 2007-11-01 2009-05-07 Sunao Funakoshi Method for power semiconductor module fabrication, its apparatus, power semiconductor module and its junction method

Also Published As

Publication number Publication date
DE102011083223A1 (de) 2013-03-28
DE102011083223B4 (de) 2019-08-22
CN103021967A (zh) 2013-04-03
US8981553B2 (en) 2015-03-17
CN103021967B (zh) 2015-07-08
US20130075932A1 (en) 2013-03-28

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