DE102011083223A8 - Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte - Google Patents
Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte Download PDFInfo
- Publication number
- DE102011083223A8 DE102011083223A8 DE102011083223A DE102011083223A DE102011083223A8 DE 102011083223 A8 DE102011083223 A8 DE 102011083223A8 DE 102011083223 A DE102011083223 A DE 102011083223A DE 102011083223 A DE102011083223 A DE 102011083223A DE 102011083223 A8 DE102011083223 A8 DE 102011083223A8
- Authority
- DE
- Germany
- Prior art keywords
- circuit board
- power semiconductor
- semiconductor module
- film circuit
- integrated thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Structure Of Printed Boards (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011083223.8A DE102011083223B4 (de) | 2011-09-22 | 2011-09-22 | Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte |
US13/623,994 US8981553B2 (en) | 2011-09-22 | 2012-09-21 | Power semiconductor module with integrated thick-film printed circuit board |
CN201210353742.3A CN103021967B (zh) | 2011-09-22 | 2012-09-21 | 具有集成的厚膜印制电路板的功率半导体模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011083223.8A DE102011083223B4 (de) | 2011-09-22 | 2011-09-22 | Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte |
Publications (3)
Publication Number | Publication Date |
---|---|
DE102011083223A1 DE102011083223A1 (de) | 2013-03-28 |
DE102011083223A8 true DE102011083223A8 (de) | 2013-04-25 |
DE102011083223B4 DE102011083223B4 (de) | 2019-08-22 |
Family
ID=47827642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102011083223.8A Active DE102011083223B4 (de) | 2011-09-22 | 2011-09-22 | Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte |
Country Status (3)
Country | Link |
---|---|
US (1) | US8981553B2 (de) |
CN (1) | CN103021967B (de) |
DE (1) | DE102011083223B4 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013212263A1 (de) * | 2013-06-26 | 2014-12-31 | Robert Bosch Gmbh | Elektrische Schaltungsanordnung |
CN105122446B (zh) * | 2013-09-30 | 2019-07-19 | 富士电机株式会社 | 半导体装置、半导体装置的组装方法、半导体装置用部件以及单位模块 |
US9576930B2 (en) * | 2013-11-08 | 2017-02-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Thermally conductive structure for heat dissipation in semiconductor packages |
DE102013114438A1 (de) | 2013-12-19 | 2015-06-25 | Karlsruher Institut für Technologie | Leistungselektronikmodul und Verfahren zur Herstellung eines Leistungselektronikmoduls |
DE102014101238A1 (de) | 2014-01-31 | 2015-08-06 | Hs Elektronik Systeme Gmbh | In Leiterplatten eingebettetes Leistungsmodul |
DE102014203310A1 (de) * | 2014-02-25 | 2015-08-27 | Siemens Aktiengesellschaft | Elektronikmodul |
US10600718B1 (en) * | 2014-12-03 | 2020-03-24 | Ii-Vi Delaware, Inc. | Heat sink package |
DE102015101086B4 (de) * | 2015-01-26 | 2018-04-12 | Infineon Technologies Ag | Leistungshalbleitermodulanordnung |
DE102016219174A1 (de) * | 2015-10-07 | 2017-04-13 | Ceramtec Gmbh | Zweiseitig gekühlter Schaltkreis |
US10600764B2 (en) | 2016-06-01 | 2020-03-24 | Rohm Co., Ltd. | Semiconductor power module |
JP6493317B2 (ja) * | 2016-06-23 | 2019-04-03 | 三菱電機株式会社 | 半導体装置 |
CN106601701B (zh) * | 2017-01-19 | 2023-03-28 | 贵州煜立电子科技有限公司 | 大功率二端表面引出脚电子元器件立体封装方法及结构 |
WO2018184948A1 (de) * | 2017-04-06 | 2018-10-11 | Ceramtec Gmbh | Zweiseitig gekühlter schaltkreis |
US10141303B1 (en) * | 2017-09-20 | 2018-11-27 | Cree, Inc. | RF amplifier package with biasing strip |
JP6835245B2 (ja) * | 2017-10-27 | 2021-02-24 | 日産自動車株式会社 | 半導体装置 |
DE102017221861A1 (de) * | 2017-12-05 | 2019-06-06 | Zf Friedrichshafen Ag | Leiterplatte und Verfahren zur Fertigung einer Leiterplatte |
US10916931B2 (en) * | 2018-01-15 | 2021-02-09 | Infineon Technologies Ag | Temperature sensing and fault detection for paralleled double-side cooled power modules |
EP3547360A1 (de) * | 2018-03-29 | 2019-10-02 | Siemens Aktiengesellschaft | Halbleiterbaugruppe und verfahren zur herstellung der halbleiterbaugruppe |
FR3088137B1 (fr) * | 2018-11-06 | 2020-11-27 | Inst Polytechnique Grenoble | Systeme electronique de puissance |
EP3761357A1 (de) * | 2019-07-04 | 2021-01-06 | Infineon Technologies Austria AG | Halbleiterbauelement |
EP3770962A1 (de) * | 2019-07-26 | 2021-01-27 | Infineon Technologies AG | Halbleitermodulanordnung |
US11071206B2 (en) | 2019-10-17 | 2021-07-20 | Infineon Technologies Austria Ag | Electronic system and processor substrate having an embedded power device module |
US11147165B2 (en) * | 2019-10-17 | 2021-10-12 | Infineon Technologies Austria Ag | Electronic system and interposer having an embedded power device module |
US11183934B2 (en) | 2019-10-17 | 2021-11-23 | Infineon Technologies Americas Corp. | Embedded substrate voltage regulators |
DE102019132685B4 (de) * | 2019-12-02 | 2022-05-25 | Audi Ag | Elektrische Schaltungsanordnung umfassend eine Erregerschaltung und eine Inverterschaltung und Kraftfahrzeug |
CN113314481B (zh) * | 2020-02-27 | 2023-01-24 | 光宝电子(广州)有限公司 | 晶体管散热模块及其组装方法 |
EP4178323A4 (de) * | 2020-07-06 | 2023-12-20 | Amosense Co.,Ltd | Leistungsmodul |
DE102022109792B4 (de) | 2022-04-22 | 2024-05-29 | Dr. Ing. H.C. F. Porsche Aktiengesellschaft | Leistungshalbleitermodul |
DE102022120293A1 (de) | 2022-08-11 | 2024-02-22 | Rolls-Royce Deutschland Ltd & Co Kg | Verfahren zur Herstellung einer Leiterplattenanordnung |
CN115050703B (zh) * | 2022-08-16 | 2022-10-25 | 杭州飞仕得科技有限公司 | 功率器件封装结构及功率变换器 |
US20240170418A1 (en) * | 2022-11-22 | 2024-05-23 | Infineon Technologies Ag | Power semiconductor module and method of producing a power semiconductor module |
TWI836795B (zh) * | 2022-12-15 | 2024-03-21 | 信通交通器材股份有限公司 | 功率裝置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05175407A (ja) * | 1991-12-25 | 1993-07-13 | Sumitomo Bakelite Co Ltd | 半導体搭載基板 |
US6265772B1 (en) * | 1998-06-17 | 2001-07-24 | Nec Corporation | Stacked semiconductor device |
US20020191383A1 (en) * | 1998-05-04 | 2002-12-19 | Corisis David J. | Stackable ball grid array package |
US20030002260A1 (en) * | 2001-05-22 | 2003-01-02 | Takehiko Hasebe | Electronic apparatus |
US6670699B2 (en) * | 2001-03-13 | 2003-12-30 | Nec Corporation | Semiconductor device packaging structure |
US20090116197A1 (en) * | 2007-11-01 | 2009-05-07 | Sunao Funakoshi | Method for power semiconductor module fabrication, its apparatus, power semiconductor module and its junction method |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3420472B2 (ja) * | 1997-07-22 | 2003-06-23 | 富士通株式会社 | 電子公開物の証明に用いられるシステム及び記録媒体 |
MY139405A (en) * | 1998-09-28 | 2009-09-30 | Ibiden Co Ltd | Printed circuit board and method for its production |
WO2000036886A1 (fr) * | 1998-12-16 | 2000-06-22 | Ibiden Co., Ltd. | Tige de connexion conductrice et plaquette de boitier |
US6265771B1 (en) * | 1999-01-27 | 2001-07-24 | International Business Machines Corporation | Dual chip with heat sink |
US20020020898A1 (en) * | 2000-08-16 | 2002-02-21 | Vu Quat T. | Microelectronic substrates with integrated devices |
JP4917225B2 (ja) * | 2001-09-28 | 2012-04-18 | ローム株式会社 | 半導体装置 |
US8704359B2 (en) * | 2003-04-01 | 2014-04-22 | Ge Embedded Electronics Oy | Method for manufacturing an electronic module and an electronic module |
JP4271590B2 (ja) * | 2004-01-20 | 2009-06-03 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
JP4343044B2 (ja) * | 2004-06-30 | 2009-10-14 | 新光電気工業株式会社 | インターポーザ及びその製造方法並びに半導体装置 |
US7221050B2 (en) * | 2004-09-02 | 2007-05-22 | Intel Corporation | Substrate having a functionally gradient coefficient of thermal expansion |
US7488896B2 (en) * | 2004-11-04 | 2009-02-10 | Ngk Spark Plug Co., Ltd. | Wiring board with semiconductor component |
US8338940B2 (en) * | 2008-03-28 | 2012-12-25 | Nec Corporation | Semiconductor device |
JP4842346B2 (ja) * | 2009-04-21 | 2011-12-21 | シャープ株式会社 | 電子部品モジュールおよびその製造方法 |
-
2011
- 2011-09-22 DE DE102011083223.8A patent/DE102011083223B4/de active Active
-
2012
- 2012-09-21 US US13/623,994 patent/US8981553B2/en active Active
- 2012-09-21 CN CN201210353742.3A patent/CN103021967B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05175407A (ja) * | 1991-12-25 | 1993-07-13 | Sumitomo Bakelite Co Ltd | 半導体搭載基板 |
US20020191383A1 (en) * | 1998-05-04 | 2002-12-19 | Corisis David J. | Stackable ball grid array package |
US6265772B1 (en) * | 1998-06-17 | 2001-07-24 | Nec Corporation | Stacked semiconductor device |
US6670699B2 (en) * | 2001-03-13 | 2003-12-30 | Nec Corporation | Semiconductor device packaging structure |
US20030002260A1 (en) * | 2001-05-22 | 2003-01-02 | Takehiko Hasebe | Electronic apparatus |
US20090116197A1 (en) * | 2007-11-01 | 2009-05-07 | Sunao Funakoshi | Method for power semiconductor module fabrication, its apparatus, power semiconductor module and its junction method |
Also Published As
Publication number | Publication date |
---|---|
CN103021967B (zh) | 2015-07-08 |
DE102011083223A1 (de) | 2013-03-28 |
CN103021967A (zh) | 2013-04-03 |
DE102011083223B4 (de) | 2019-08-22 |
US8981553B2 (en) | 2015-03-17 |
US20130075932A1 (en) | 2013-03-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE102011083223A8 (de) | Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte | |
EP2764538A4 (de) | Elektronische hochleistungshalbleiter-bauteile mit erhöhter zuverlässigkeit | |
HK1201399A1 (en) | Electronic circuit module | |
DK2844487T4 (da) | Fleksibelt substrat med integreret kredsløb | |
EP2712085A4 (de) | Schaltkreis und halbleitermodul | |
EP2716149A4 (de) | Flüssigkeitsgekühltes modul für integrierte schaltungen | |
DK2249392T3 (da) | Omvendt ledende halvlederenhed | |
FR2958441B1 (fr) | Circuit pseudo-inverseur sur seoi | |
DK2592915T3 (da) | Fremstillingsfremgangsmåde til lamineret printplade | |
EP2661156A4 (de) | Leiterplatte für ein halbleitermodul | |
BR112014028463A2 (pt) | disposição de módulo eletrônico de potência | |
TWI561832B (en) | Semiconductor integrated circuit | |
DK2717756T3 (da) | Sensor til måling af vitalparametre i øregangen | |
DE112011102938A5 (de) | Schaltungsanordnung mit Überwachungseinrichtung | |
EP2698684A4 (de) | Schaltung mit integriertem halbeiter | |
DE112012000632A5 (de) | Schaltungsanordnung mit Fail-Silent-Funktion | |
TWM390545U (en) | Integrated circuit with layout structure | |
DE112014005400A5 (de) | Hybridmodul mit integrierter Leistungselektronik | |
FR2946182B1 (fr) | Circuit integre tridimensionnel. | |
DE102010062848A8 (de) | Elektronische Vorrichtung mit Hilfselement | |
DE112012002828T8 (de) | Leiterplatte | |
FR2976762B1 (fr) | Module electronique de puissance a capacite integree | |
DK2877779T3 (da) | Integreret kredsløbsmodulærbelysning | |
EP2748844A4 (de) | Waferstruktur zur herstellung einer elektronischen integrierten schaltung | |
DE602008004234D1 (de) | Integrierte Halbleiterschaltung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed | ||
R079 | Amendment of ipc main class |
Free format text: PREVIOUS MAIN CLASS: H01L0023150000 Ipc: H01L0023140000 |
|
R016 | Response to examination communication | ||
R016 | Response to examination communication | ||
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division | ||
R020 | Patent grant now final | ||
R082 | Change of representative |