DE102010043668B4 - Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung - Google Patents

Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung Download PDF

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Publication number
DE102010043668B4
DE102010043668B4 DE102010043668A DE102010043668A DE102010043668B4 DE 102010043668 B4 DE102010043668 B4 DE 102010043668B4 DE 102010043668 A DE102010043668 A DE 102010043668A DE 102010043668 A DE102010043668 A DE 102010043668A DE 102010043668 B4 DE102010043668 B4 DE 102010043668B4
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Prior art keywords
indium
indium oxide
composition
layers
alkoxides
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Expired - Fee Related
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DE102010043668A
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German (de)
English (en)
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DE102010043668A1 (de
Inventor
Dr. Steiger Jürgen
Dr. Pham Duy Vu
Dr. Thiem Heiko
Dr. Merkulov Alexey
Dr. Hoppe Arne
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Evonik Operations GmbH
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Evonik Degussa GmbH
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Priority to DE102010043668A priority Critical patent/DE102010043668B4/de
Application filed by Evonik Degussa GmbH filed Critical Evonik Degussa GmbH
Priority to EP11779137.6A priority patent/EP2638183B1/de
Priority to JP2013538122A priority patent/JP5933575B2/ja
Priority to US13/884,495 priority patent/US8859332B2/en
Priority to KR1020137011988A priority patent/KR101801431B1/ko
Priority to PCT/EP2011/068736 priority patent/WO2012062575A1/de
Priority to CN201180054427.4A priority patent/CN103201409B/zh
Priority to TW100140719A priority patent/TWI567232B/zh
Publication of DE102010043668A1 publication Critical patent/DE102010043668A1/de
Application granted granted Critical
Publication of DE102010043668B4 publication Critical patent/DE102010043668B4/de
Priority to JP2016092583A priority patent/JP6161764B2/ja
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Anticipated expiration legal-status Critical

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemically Coating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Paints Or Removers (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Thin Film Transistor (AREA)
DE102010043668A 2010-11-10 2010-11-10 Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung Expired - Fee Related DE102010043668B4 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE102010043668A DE102010043668B4 (de) 2010-11-10 2010-11-10 Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
JP2013538122A JP5933575B2 (ja) 2010-11-10 2011-10-26 酸化インジウム含有層の製造方法
US13/884,495 US8859332B2 (en) 2010-11-10 2011-10-26 Process for producing indium oxide-containing layers
KR1020137011988A KR101801431B1 (ko) 2010-11-10 2011-10-26 인듐 산화물-함유 층의 제조 방법
EP11779137.6A EP2638183B1 (de) 2010-11-10 2011-10-26 Verfahren zur herstellung von indiumoxid-haltigen schichten
PCT/EP2011/068736 WO2012062575A1 (de) 2010-11-10 2011-10-26 Verfahren zur herstellung von indiumoxid-haltigen schichten
CN201180054427.4A CN103201409B (zh) 2010-11-10 2011-10-26 制备含氧化铟的层的方法
TW100140719A TWI567232B (zh) 2010-11-10 2011-11-08 含氧化銦的層之製法
JP2016092583A JP6161764B2 (ja) 2010-11-10 2016-05-02 酸化インジウム含有層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102010043668A DE102010043668B4 (de) 2010-11-10 2010-11-10 Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung

Publications (2)

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DE102010043668A1 DE102010043668A1 (de) 2012-05-10
DE102010043668B4 true DE102010043668B4 (de) 2012-06-21

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DE102010043668A Expired - Fee Related DE102010043668B4 (de) 2010-11-10 2010-11-10 Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung

Country Status (8)

Country Link
US (1) US8859332B2 (enExample)
EP (1) EP2638183B1 (enExample)
JP (2) JP5933575B2 (enExample)
KR (1) KR101801431B1 (enExample)
CN (1) CN103201409B (enExample)
DE (1) DE102010043668B4 (enExample)
TW (1) TWI567232B (enExample)
WO (1) WO2012062575A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009009338A1 (de) 2009-02-17 2010-08-26 Evonik Degussa Gmbh Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102010031592A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010031895A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102011084145A1 (de) 2011-10-07 2013-04-11 Evonik Degussa Gmbh Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung
DE102012209918A1 (de) * 2012-06-13 2013-12-19 Evonik Industries Ag Verfahren zur Herstellung Indiumoxid-haltiger Schichten
DE102013212019A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Formulierungen zur Herstellung Indiumoxid-haltiger Schichten, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102013212017A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Verfahren zur Herstellung von Indiumalkoxid-Verbindungen, die nach dem Verfahren herstellbaren Indiumalkoxid-Verbindungen und ihre Verwendung
DE102013212018A1 (de) 2013-06-25 2015-01-08 Evonik Industries Ag Metalloxid-Prekursoren, sie enthaltende Beschichtungszusammensetzungen, und ihre Verwendung
DE102014202718A1 (de) 2014-02-14 2015-08-20 Evonik Degussa Gmbh Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung
JP6828293B2 (ja) 2015-09-15 2021-02-10 株式会社リコー ｎ型酸化物半導体膜形成用塗布液、ｎ型酸化物半導体膜の製造方法、及び電界効果型トランジスタの製造方法
FR3061210B1 (fr) 2016-12-22 2021-12-24 Electricite De France Procede sol-gel de fabrication d'un revetement anticorrosion sur substrat metallique
JP2019057698A (ja) * 2017-09-22 2019-04-11 株式会社Ｓｃｒｅｅｎホールディングス 薄膜形成方法および薄膜形成装置
CN112292752A (zh) * 2018-06-08 2021-01-29 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法

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JPH01115010A (ja) * 1987-10-28 1989-05-08 Central Glass Co Ltd 透明導電性膜用組成物およびその膜の形成方法
JPH02113033A (ja) * 1988-10-21 1990-04-25 Central Glass Co Ltd 静電防止処理を施された非金属材料およびこれらの処理方法
JPH02145459A (ja) * 1988-11-28 1990-06-04 Central Glass Co Ltd 複写機用ガラスおよびその製造法
US5237081A (en) * 1990-03-16 1993-08-17 Eastman Kodak Company Preparation of indium alkoxides soluble in organic solvents
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JPH11106935A (ja) * 1997-09-30 1999-04-20 Fuji Photo Film Co Ltd 金属酸化物薄膜の製造方法及び金属酸化物薄膜
JP2000016812A (ja) * 1998-07-02 2000-01-18 Kansai Shingijutsu Kenkyusho:Kk 金属酸化物膜の製造方法
WO2008083310A1 (en) * 2006-12-29 2008-07-10 3M Innovative Properties Company Method of curing metal alkoxide-containing films
US20090112012A1 (en) * 2007-10-27 2009-04-30 Multivalent Limited Synthesis of gallium and indium alkoxides
DE102009054997B3 (de) * 2009-12-18 2011-06-01 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung

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DE102007013181B4 (de) * 2007-03-20 2017-11-09 Evonik Degussa Gmbh Transparente, elektrisch leitfähige Schicht
DE102007018431A1 (de) 2007-04-19 2008-10-30 Evonik Degussa Gmbh Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor
DE102008041276A1 (de) 2008-08-15 2010-02-18 Evonik Degussa Gmbh Reichweiten- und Material-optimiertes Antennendesign für eine UHF-RFID-Antenne mit an den Chip angepasster Impedanz
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DE102009009338A1 (de) 2009-02-17 2010-08-26 Evonik Degussa Gmbh Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102009001221A1 (de) 2009-02-27 2010-09-02 Evonik Degussa Gmbh Druckverfahren zur Herstellung individualisierter elektrischer und/oder elektronischer Strukturen
DE102009028801B3 (de) * 2009-08-21 2011-04-14 Evonik Degussa Gmbh Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung
DE102009028802B3 (de) * 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
DE102009050703B3 (de) 2009-10-26 2011-04-21 Evonik Goldschmidt Gmbh Verfahren zur Selbstassemblierung elektrischer, elektronischer oder mikromechanischer Bauelemente auf einem Substrat und damit hergestelltes Erzeugnis
DE102009053943A1 (de) 2009-11-19 2011-05-26 Evonik Degussa Gmbh Verfahren zur Erzeugung silberhaltiger Strukturen, die silberhaltigen Strukturen aufweisende Erzeugnisse und ihre Verwendung
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DE102010031895A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010031592A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4681959A (en) * 1985-04-22 1987-07-21 Stauffer Chemical Company Preparation of insoluble metal alkoxides
JPH01115010A (ja) * 1987-10-28 1989-05-08 Central Glass Co Ltd 透明導電性膜用組成物およびその膜の形成方法
JPH02113033A (ja) * 1988-10-21 1990-04-25 Central Glass Co Ltd 静電防止処理を施された非金属材料およびこれらの処理方法
JPH02145459A (ja) * 1988-11-28 1990-06-04 Central Glass Co Ltd 複写機用ガラスおよびその製造法
US5237081A (en) * 1990-03-16 1993-08-17 Eastman Kodak Company Preparation of indium alkoxides soluble in organic solvents
JPH09157855A (ja) * 1995-12-06 1997-06-17 Kansai Shin Gijutsu Kenkyusho:Kk 金属酸化物薄膜の形成方法
JPH11106935A (ja) * 1997-09-30 1999-04-20 Fuji Photo Film Co Ltd 金属酸化物薄膜の製造方法及び金属酸化物薄膜
JP2000016812A (ja) * 1998-07-02 2000-01-18 Kansai Shingijutsu Kenkyusho:Kk 金属酸化物膜の製造方法
WO2008083310A1 (en) * 2006-12-29 2008-07-10 3M Innovative Properties Company Method of curing metal alkoxide-containing films
US20090112012A1 (en) * 2007-10-27 2009-04-30 Multivalent Limited Synthesis of gallium and indium alkoxides
DE102009054997B3 (de) * 2009-12-18 2011-06-01 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung

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Publication number Publication date
TW201235506A (en) 2012-09-01
EP2638183A1 (de) 2013-09-18
DE102010043668A1 (de) 2012-05-10
KR20130126613A (ko) 2013-11-20
CN103201409B (zh) 2015-04-08
US20130221352A1 (en) 2013-08-29
TWI567232B (zh) 2017-01-21
WO2012062575A1 (de) 2012-05-18
US8859332B2 (en) 2014-10-14
JP2016169150A (ja) 2016-09-23
JP2013543931A (ja) 2013-12-09
JP5933575B2 (ja) 2016-06-15
JP6161764B2 (ja) 2017-07-12
EP2638183B1 (de) 2017-12-06
CN103201409A (zh) 2013-07-10
KR101801431B1 (ko) 2017-11-24

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