DE102008050538B4 - Optoelektronisches Bauelement und Verfahren zu dessen Herstellung - Google Patents

Optoelektronisches Bauelement und Verfahren zu dessen Herstellung Download PDF

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Publication number
DE102008050538B4
DE102008050538B4 DE102008050538.2A DE102008050538A DE102008050538B4 DE 102008050538 B4 DE102008050538 B4 DE 102008050538B4 DE 102008050538 A DE102008050538 A DE 102008050538A DE 102008050538 B4 DE102008050538 B4 DE 102008050538B4
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Prior art keywords
layer
semiconductor layer
metallic mirror
low
index dielectric
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DE102008050538.2A
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German (de)
English (en)
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DE102008050538A1 (de
Inventor
Dr. Kaiser Stephan
Dr. Plößl Andreas
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102008050538.2A priority Critical patent/DE102008050538B4/de
Priority to TW098117960A priority patent/TWI396304B/zh
Priority to KR1020117000175A priority patent/KR20110019416A/ko
Priority to JP2011511971A priority patent/JP2011522427A/ja
Priority to CN200980121115.3A priority patent/CN102057505B/zh
Priority to PCT/DE2009/000781 priority patent/WO2009146689A1/de
Priority to US12/996,622 priority patent/US10128405B2/en
Priority to EP09757123.6A priority patent/EP2289113B1/de
Publication of DE102008050538A1 publication Critical patent/DE102008050538A1/de
Priority to US16/041,343 priority patent/US11222992B2/en
Application granted granted Critical
Publication of DE102008050538B4 publication Critical patent/DE102008050538B4/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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DE102008050538.2A 2008-06-06 2008-10-06 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung Active DE102008050538B4 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE102008050538.2A DE102008050538B4 (de) 2008-06-06 2008-10-06 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
TW098117960A TWI396304B (zh) 2008-06-06 2009-06-01 光電組件及其製造方法
JP2011511971A JP2011522427A (ja) 2008-06-06 2009-06-03 オプトエレクトロニクス部品およびその製造方法
CN200980121115.3A CN102057505B (zh) 2008-06-06 2009-06-03 光电子器件及其制造的方法
KR1020117000175A KR20110019416A (ko) 2008-06-06 2009-06-03 광전 소자 및 그 제조 방법
PCT/DE2009/000781 WO2009146689A1 (de) 2008-06-06 2009-06-03 Optoelektronisches bauelement und verfahren zu dessen herstellung
US12/996,622 US10128405B2 (en) 2008-06-06 2009-06-03 Optoelectronic component and method for the production thereof
EP09757123.6A EP2289113B1 (de) 2008-06-06 2009-06-03 Optoelektronisches bauelement und verfahren zu dessen herstellung
US16/041,343 US11222992B2 (en) 2008-06-06 2018-07-20 Optoelectronic component and method for the production thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008027041 2008-06-06
DE102008027041.5 2008-06-06
DE102008050538.2A DE102008050538B4 (de) 2008-06-06 2008-10-06 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
DE102008050538A1 DE102008050538A1 (de) 2010-02-11
DE102008050538B4 true DE102008050538B4 (de) 2022-10-06

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DE102008050538.2A Active DE102008050538B4 (de) 2008-06-06 2008-10-06 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung

Country Status (8)

Country Link
US (2) US10128405B2 (https=)
EP (1) EP2289113B1 (https=)
JP (1) JP2011522427A (https=)
KR (1) KR20110019416A (https=)
CN (1) CN102057505B (https=)
DE (1) DE102008050538B4 (https=)
TW (1) TWI396304B (https=)
WO (1) WO2009146689A1 (https=)

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EP0905797A2 (de) 1997-09-29 1999-03-31 Siemens Aktiengesellschaft Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
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Also Published As

Publication number Publication date
EP2289113B1 (de) 2020-04-08
KR20110019416A (ko) 2011-02-25
TW201006016A (en) 2010-02-01
CN102057505B (zh) 2015-04-22
WO2009146689A1 (de) 2009-12-10
EP2289113A1 (de) 2011-03-02
US20110210357A1 (en) 2011-09-01
US11222992B2 (en) 2022-01-11
US10128405B2 (en) 2018-11-13
US20180331254A1 (en) 2018-11-15
JP2011522427A (ja) 2011-07-28
CN102057505A (zh) 2011-05-11
TWI396304B (zh) 2013-05-11
DE102008050538A1 (de) 2010-02-11

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