KR20110019416A - 광전 소자 및 그 제조 방법 - Google Patents

광전 소자 및 그 제조 방법 Download PDF

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Publication number
KR20110019416A
KR20110019416A KR1020117000175A KR20117000175A KR20110019416A KR 20110019416 A KR20110019416 A KR 20110019416A KR 1020117000175 A KR1020117000175 A KR 1020117000175A KR 20117000175 A KR20117000175 A KR 20117000175A KR 20110019416 A KR20110019416 A KR 20110019416A
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semiconductor layer
mesa
semiconductor
trench
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Korean (ko)
Inventor
스테판 카이저
안드레아스 플로슬
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오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20110019416A publication Critical patent/KR20110019416A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

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  • Led Devices (AREA)
KR1020117000175A 2008-06-06 2009-06-03 광전 소자 및 그 제조 방법 Ceased KR20110019416A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008027041 2008-06-06
DE102008027041.5 2008-06-06
DE102008050538.2 2008-10-06
DE102008050538.2A DE102008050538B4 (de) 2008-06-06 2008-10-06 Optoelektronisches Bauelement und Verfahren zu dessen Herstellung

Publications (1)

Publication Number Publication Date
KR20110019416A true KR20110019416A (ko) 2011-02-25

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KR1020117000175A Ceased KR20110019416A (ko) 2008-06-06 2009-06-03 광전 소자 및 그 제조 방법

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Country Link
US (2) US10128405B2 (https=)
EP (1) EP2289113B1 (https=)
JP (1) JP2011522427A (https=)
KR (1) KR20110019416A (https=)
CN (1) CN102057505B (https=)
DE (1) DE102008050538B4 (https=)
TW (1) TWI396304B (https=)
WO (1) WO2009146689A1 (https=)

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Also Published As

Publication number Publication date
EP2289113B1 (de) 2020-04-08
DE102008050538B4 (de) 2022-10-06
TW201006016A (en) 2010-02-01
CN102057505B (zh) 2015-04-22
WO2009146689A1 (de) 2009-12-10
EP2289113A1 (de) 2011-03-02
US20110210357A1 (en) 2011-09-01
US11222992B2 (en) 2022-01-11
US10128405B2 (en) 2018-11-13
US20180331254A1 (en) 2018-11-15
JP2011522427A (ja) 2011-07-28
CN102057505A (zh) 2011-05-11
TWI396304B (zh) 2013-05-11
DE102008050538A1 (de) 2010-02-11

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