DE102007058952A1 - Optoelektronisches Bauelement - Google Patents
Optoelektronisches Bauelement Download PDFInfo
- Publication number
- DE102007058952A1 DE102007058952A1 DE102007058952A DE102007058952A DE102007058952A1 DE 102007058952 A1 DE102007058952 A1 DE 102007058952A1 DE 102007058952 A DE102007058952 A DE 102007058952A DE 102007058952 A DE102007058952 A DE 102007058952A DE 102007058952 A1 DE102007058952 A1 DE 102007058952A1
- Authority
- DE
- Germany
- Prior art keywords
- emission
- radiation
- optoelectronic component
- component according
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 88
- 230000005855 radiation Effects 0.000 claims abstract description 218
- 239000004065 semiconductor Substances 0.000 claims abstract description 158
- 238000005086 pumping Methods 0.000 claims abstract description 103
- 230000004888 barrier function Effects 0.000 claims description 74
- 239000002800 charge carrier Substances 0.000 claims description 49
- 230000003287 optical effect Effects 0.000 claims description 36
- 238000002310 reflectometry Methods 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 29
- 230000003595 spectral effect Effects 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000002745 absorbent Effects 0.000 claims description 2
- 239000002250 absorbent Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 203
- 238000004088 simulation Methods 0.000 description 16
- 238000005253 cladding Methods 0.000 description 15
- 230000006798 recombination Effects 0.000 description 12
- 238000005215 recombination Methods 0.000 description 12
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000001427 coherent effect Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 238000013139 quantization Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- -1 Si 3 N 4 Chemical class 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Luminescent Compositions (AREA)
- Led Devices (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007058952A DE102007058952A1 (de) | 2007-09-24 | 2007-12-07 | Optoelektronisches Bauelement |
| KR1020107005557A KR101608542B1 (ko) | 2007-09-24 | 2008-08-29 | 광전 소자 |
| CN2008801085531A CN101809832B (zh) | 2007-09-24 | 2008-08-29 | 光电子器件 |
| JP2010525191A JP5646326B2 (ja) | 2007-09-24 | 2008-08-29 | オプトエレクトロニクスコンポーネント |
| PCT/DE2008/001444 WO2009039814A1 (de) | 2007-09-24 | 2008-08-29 | Optoelektronisches bauelement |
| US12/679,892 US8406265B2 (en) | 2007-09-24 | 2008-08-29 | Optoelectronic component |
| EP08801251.3A EP2191547B1 (de) | 2007-09-24 | 2008-08-29 | Optoelektronisches bauelement |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007045463 | 2007-09-24 | ||
| DE102007045463.7 | 2007-09-24 | ||
| DE102007058952A DE102007058952A1 (de) | 2007-09-24 | 2007-12-07 | Optoelektronisches Bauelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102007058952A1 true DE102007058952A1 (de) | 2009-04-09 |
Family
ID=40418257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102007058952A Withdrawn DE102007058952A1 (de) | 2007-09-24 | 2007-12-07 | Optoelektronisches Bauelement |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8406265B2 (enExample) |
| EP (1) | EP2191547B1 (enExample) |
| JP (1) | JP5646326B2 (enExample) |
| KR (1) | KR101608542B1 (enExample) |
| CN (1) | CN101809832B (enExample) |
| DE (1) | DE102007058952A1 (enExample) |
| WO (1) | WO2009039814A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017111938A1 (de) * | 2017-05-31 | 2018-12-06 | Osram Opto Semiconductors Gmbh | Halbleiterlaserdiode |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9678519B1 (en) | 2006-06-06 | 2017-06-13 | Ideal Power, Inc. | Voltage control modes for microgrid applications |
| US9397580B1 (en) | 2006-06-06 | 2016-07-19 | Ideal Power, Inc. | Dual link power converter |
| US9431888B1 (en) | 2006-06-06 | 2016-08-30 | Ideal Power, Inc. | Single-phase to three phase converter AC motor drive |
| US9124095B1 (en) | 2013-02-15 | 2015-09-01 | Ideal Power Inc. | Islanding detection in power converters |
| US9407133B1 (en) | 2013-02-15 | 2016-08-02 | Ideal Power, Inc. | Active power conditioner |
| US9219406B1 (en) | 2013-02-15 | 2015-12-22 | Ideal Power Inc. | Systems and methods for assessing current in a resonant circuit |
| US9614458B1 (en) | 2013-02-15 | 2017-04-04 | Ideal Power, Inc. | Methods for determining maximum power point tracking in power converters |
| US9520764B1 (en) | 2013-02-15 | 2016-12-13 | Ideal Power, Inc. | Bi-directional multi-port applications |
| WO2014127330A2 (en) | 2013-02-15 | 2014-08-21 | Ideal Power, Inc. | Power-packet-switching converter with sequenced connection to link inductor |
| WO2015089227A1 (en) | 2013-12-11 | 2015-06-18 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
| CN106170861B (zh) | 2014-01-16 | 2018-12-28 | 理想能量有限公司 | 对表面电荷敏感性降低的结构和方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5796771A (en) * | 1996-08-19 | 1998-08-18 | The Regents Of The University Of California | Miniature self-pumped monolithically integrated solid state laser |
| US6239901B1 (en) * | 1998-04-03 | 2001-05-29 | Agilent Technologies, Inc. | Light source utilizing a light emitting device constructed on the surface of a substrate and light conversion device that includes a portion of the substrate |
| US20030026312A1 (en) * | 2001-07-31 | 2003-02-06 | Clayton Richard D. | Monolithically integrated optically-pumped edge-emitting semiconductor laser |
| DE10345555A1 (de) * | 2003-09-30 | 2005-05-04 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes und -empfangendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
| DE102004042146A1 (de) * | 2004-04-30 | 2006-01-26 | Osram Opto Semiconductors Gmbh | Optisch gepumpte Halbleitervorrichtung |
| DE102005048196A1 (de) * | 2005-07-29 | 2007-02-01 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03126931A (ja) * | 1989-10-12 | 1991-05-30 | Fuji Photo Film Co Ltd | 光波長変換デバイス |
| US5301204A (en) * | 1992-09-15 | 1994-04-05 | Texas Instruments Incorporated | Porous silicon as a light source for rare earth-doped CaF2 laser |
| EP1035623A1 (en) * | 1998-12-04 | 2000-09-13 | Interuniversitair Micro-Elektronica Centrum Vzw | A device for emitting electromagnetic radiation and a method of producing such device |
| US8829546B2 (en) * | 1999-11-19 | 2014-09-09 | Cree, Inc. | Rare earth doped layer or substrate for light conversion |
| JP4770058B2 (ja) * | 2000-05-17 | 2011-09-07 | 日亜化学工業株式会社 | 発光素子及び装置 |
| DE10026734A1 (de) * | 2000-05-30 | 2001-12-13 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
| DE10108079A1 (de) * | 2000-05-30 | 2002-09-12 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
| US6493132B1 (en) * | 2001-02-14 | 2002-12-10 | Agere Systems Guardian Corp. | Monolithic optically pumped high power semiconductor lasers and amplifiers |
| US6879618B2 (en) * | 2001-04-11 | 2005-04-12 | Eastman Kodak Company | Incoherent light-emitting device apparatus for driving vertical laser cavity |
| DE10129616A1 (de) * | 2001-06-20 | 2003-01-09 | Infineon Technologies Ag | Halbleiterlaser, Verfahren zum Herstellen eines Halbleiterlasers und Verfahren zum Betreiben eines Halbleiterlasers |
| JP4047150B2 (ja) | 2002-11-28 | 2008-02-13 | ローム株式会社 | 半導体発光素子 |
| US7209506B2 (en) * | 2003-07-31 | 2007-04-24 | Osram Opto Semiconductors Gmbh | Optically pumped semiconductor device and method for producing it |
| US6947466B2 (en) * | 2004-01-29 | 2005-09-20 | Coherent, Inc. | Optically pumped edge-emitting semiconductor laser |
| US7826511B1 (en) * | 2005-03-25 | 2010-11-02 | Hrl Laboratories, Llc | Optically pumped laser with an integrated optical pump |
| KR100809413B1 (ko) * | 2005-12-08 | 2008-03-05 | 한국전자통신연구원 | 광검출기를 구비한 수직 공진 표면방출레이저 및 그제조방법 |
-
2007
- 2007-12-07 DE DE102007058952A patent/DE102007058952A1/de not_active Withdrawn
-
2008
- 2008-08-29 WO PCT/DE2008/001444 patent/WO2009039814A1/de not_active Ceased
- 2008-08-29 CN CN2008801085531A patent/CN101809832B/zh active Active
- 2008-08-29 JP JP2010525191A patent/JP5646326B2/ja active Active
- 2008-08-29 US US12/679,892 patent/US8406265B2/en active Active
- 2008-08-29 EP EP08801251.3A patent/EP2191547B1/de active Active
- 2008-08-29 KR KR1020107005557A patent/KR101608542B1/ko not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5796771A (en) * | 1996-08-19 | 1998-08-18 | The Regents Of The University Of California | Miniature self-pumped monolithically integrated solid state laser |
| US6239901B1 (en) * | 1998-04-03 | 2001-05-29 | Agilent Technologies, Inc. | Light source utilizing a light emitting device constructed on the surface of a substrate and light conversion device that includes a portion of the substrate |
| US20030026312A1 (en) * | 2001-07-31 | 2003-02-06 | Clayton Richard D. | Monolithically integrated optically-pumped edge-emitting semiconductor laser |
| DE10345555A1 (de) * | 2003-09-30 | 2005-05-04 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes und -empfangendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
| DE102004042146A1 (de) * | 2004-04-30 | 2006-01-26 | Osram Opto Semiconductors Gmbh | Optisch gepumpte Halbleitervorrichtung |
| DE102005048196A1 (de) * | 2005-07-29 | 2007-02-01 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017111938A1 (de) * | 2017-05-31 | 2018-12-06 | Osram Opto Semiconductors Gmbh | Halbleiterlaserdiode |
| DE102017111938B4 (de) | 2017-05-31 | 2022-09-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optisch gepumpte Halbleiterlaserdiode |
| US11581702B2 (en) | 2017-05-31 | 2023-02-14 | Osram Oled Gmbh | Semiconductor laser diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101809832A (zh) | 2010-08-18 |
| US20100296538A1 (en) | 2010-11-25 |
| JP5646326B2 (ja) | 2014-12-24 |
| KR20100057043A (ko) | 2010-05-28 |
| US8406265B2 (en) | 2013-03-26 |
| EP2191547A1 (de) | 2010-06-02 |
| KR101608542B1 (ko) | 2016-04-11 |
| WO2009039814A1 (de) | 2009-04-02 |
| EP2191547B1 (de) | 2015-11-18 |
| JP2010541195A (ja) | 2010-12-24 |
| CN101809832B (zh) | 2012-09-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| R005 | Application deemed withdrawn due to failure to request examination | ||
| R005 | Application deemed withdrawn due to failure to request examination |
Effective date: 20141209 |