CN101809832B - 光电子器件 - Google Patents

光电子器件 Download PDF

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Publication number
CN101809832B
CN101809832B CN2008801085531A CN200880108553A CN101809832B CN 101809832 B CN101809832 B CN 101809832B CN 2008801085531 A CN2008801085531 A CN 2008801085531A CN 200880108553 A CN200880108553 A CN 200880108553A CN 101809832 B CN101809832 B CN 101809832B
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CN
China
Prior art keywords
radiation
region
electronic device
pump
emitter region
Prior art date
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CN2008801085531A
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English (en)
Chinese (zh)
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CN101809832A (zh
Inventor
马蒂亚斯·扎巴蒂尔
彼得·布里克
克里斯托夫·艾克勒
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN101809832A publication Critical patent/CN101809832A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Luminescent Compositions (AREA)
  • Led Devices (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
CN2008801085531A 2007-09-24 2008-08-29 光电子器件 Active CN101809832B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007045463.7 2007-09-24
DE102007045463 2007-09-24
DE102007058952.4 2007-12-07
DE102007058952A DE102007058952A1 (de) 2007-09-24 2007-12-07 Optoelektronisches Bauelement
PCT/DE2008/001444 WO2009039814A1 (de) 2007-09-24 2008-08-29 Optoelektronisches bauelement

Publications (2)

Publication Number Publication Date
CN101809832A CN101809832A (zh) 2010-08-18
CN101809832B true CN101809832B (zh) 2012-09-05

Family

ID=40418257

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801085531A Active CN101809832B (zh) 2007-09-24 2008-08-29 光电子器件

Country Status (7)

Country Link
US (1) US8406265B2 (enExample)
EP (1) EP2191547B1 (enExample)
JP (1) JP5646326B2 (enExample)
KR (1) KR101608542B1 (enExample)
CN (1) CN101809832B (enExample)
DE (1) DE102007058952A1 (enExample)
WO (1) WO2009039814A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431888B1 (en) 2006-06-06 2016-08-30 Ideal Power, Inc. Single-phase to three phase converter AC motor drive
US9678519B1 (en) 2006-06-06 2017-06-13 Ideal Power, Inc. Voltage control modes for microgrid applications
US9397580B1 (en) 2006-06-06 2016-07-19 Ideal Power, Inc. Dual link power converter
US9124095B1 (en) 2013-02-15 2015-09-01 Ideal Power Inc. Islanding detection in power converters
GB2525135B (en) 2013-02-15 2015-11-25 Ideal Power Inc Power-packet-switching converter with sequenced connection to link inductor
US9614458B1 (en) 2013-02-15 2017-04-04 Ideal Power, Inc. Methods for determining maximum power point tracking in power converters
US9407133B1 (en) 2013-02-15 2016-08-02 Ideal Power, Inc. Active power conditioner
US9520764B1 (en) 2013-02-15 2016-12-13 Ideal Power, Inc. Bi-directional multi-port applications
US9219406B1 (en) 2013-02-15 2015-12-22 Ideal Power Inc. Systems and methods for assessing current in a resonant circuit
JP6542775B2 (ja) 2013-12-11 2019-07-10 アイディール パワー インコーポレイテッド 双方向デバイス製造のためのシステムおよび方法
US9337262B2 (en) 2014-01-16 2016-05-10 Ideal Power Inc. Structures and methods with reduced sensitivity to surface charge
DE102017111938B4 (de) 2017-05-31 2022-09-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optisch gepumpte Halbleiterlaserdiode

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5301204A (en) * 1992-09-15 1994-04-05 Texas Instruments Incorporated Porous silicon as a light source for rare earth-doped CaF2 laser
EP1035623A1 (en) * 1998-12-04 2000-09-13 Interuniversitair Micro-Elektronica Centrum Vzw A device for emitting electromagnetic radiation and a method of producing such device
US6239901B1 (en) * 1998-04-03 2001-05-29 Agilent Technologies, Inc. Light source utilizing a light emitting device constructed on the surface of a substrate and light conversion device that includes a portion of the substrate
CN1574519A (zh) * 2003-06-24 2005-02-02 伊斯曼柯达公司 驱动垂直激光腔的非相干光发射器件装置
EP1615306A2 (de) * 2000-05-30 2006-01-11 Osram Opto Semiconductors GmbH Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
JPH03126931A (ja) * 1989-10-12 1991-05-30 Fuji Photo Film Co Ltd 光波長変換デバイス
US5796771A (en) * 1996-08-19 1998-08-18 The Regents Of The University Of California Miniature self-pumped monolithically integrated solid state laser
US8829546B2 (en) * 1999-11-19 2014-09-09 Cree, Inc. Rare earth doped layer or substrate for light conversion
JP4770058B2 (ja) 2000-05-17 2011-09-07 日亜化学工業株式会社 発光素子及び装置
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US6493132B1 (en) * 2001-02-14 2002-12-10 Agere Systems Guardian Corp. Monolithic optically pumped high power semiconductor lasers and amplifiers
DE10129616A1 (de) 2001-06-20 2003-01-09 Infineon Technologies Ag Halbleiterlaser, Verfahren zum Herstellen eines Halbleiterlasers und Verfahren zum Betreiben eines Halbleiterlasers
US6714574B2 (en) * 2001-07-31 2004-03-30 Bookham Technology, Plc Monolithically integrated optically-pumped edge-emitting semiconductor laser
JP4047150B2 (ja) 2002-11-28 2008-02-13 ローム株式会社 半導体発光素子
JP4819330B2 (ja) * 2003-07-31 2011-11-24 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 光ポンプビーム放射半導体装置及びその製造方法
DE10345555A1 (de) * 2003-09-30 2005-05-04 Osram Opto Semiconductors Gmbh Strahlungsemittierendes und -empfangendes Halbleiterbauelement und Verfahren zu dessen Herstellung
US6947466B2 (en) * 2004-01-29 2005-09-20 Coherent, Inc. Optically pumped edge-emitting semiconductor laser
DE102004042146A1 (de) * 2004-04-30 2006-01-26 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleitervorrichtung
US7826511B1 (en) * 2005-03-25 2010-11-02 Hrl Laboratories, Llc Optically pumped laser with an integrated optical pump
DE102005048196B4 (de) * 2005-07-29 2023-01-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
KR100809413B1 (ko) * 2005-12-08 2008-03-05 한국전자통신연구원 광검출기를 구비한 수직 공진 표면방출레이저 및 그제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5301204A (en) * 1992-09-15 1994-04-05 Texas Instruments Incorporated Porous silicon as a light source for rare earth-doped CaF2 laser
US6239901B1 (en) * 1998-04-03 2001-05-29 Agilent Technologies, Inc. Light source utilizing a light emitting device constructed on the surface of a substrate and light conversion device that includes a portion of the substrate
EP1035623A1 (en) * 1998-12-04 2000-09-13 Interuniversitair Micro-Elektronica Centrum Vzw A device for emitting electromagnetic radiation and a method of producing such device
EP1615306A2 (de) * 2000-05-30 2006-01-11 Osram Opto Semiconductors GmbH Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
CN1574519A (zh) * 2003-06-24 2005-02-02 伊斯曼柯达公司 驱动垂直激光腔的非相干光发射器件装置

Also Published As

Publication number Publication date
US8406265B2 (en) 2013-03-26
EP2191547B1 (de) 2015-11-18
JP5646326B2 (ja) 2014-12-24
KR101608542B1 (ko) 2016-04-11
DE102007058952A1 (de) 2009-04-09
WO2009039814A1 (de) 2009-04-02
EP2191547A1 (de) 2010-06-02
CN101809832A (zh) 2010-08-18
JP2010541195A (ja) 2010-12-24
US20100296538A1 (en) 2010-11-25
KR20100057043A (ko) 2010-05-28

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