KR101608542B1 - 광전 소자 - Google Patents

광전 소자 Download PDF

Info

Publication number
KR101608542B1
KR101608542B1 KR1020107005557A KR20107005557A KR101608542B1 KR 101608542 B1 KR101608542 B1 KR 101608542B1 KR 1020107005557 A KR1020107005557 A KR 1020107005557A KR 20107005557 A KR20107005557 A KR 20107005557A KR 101608542 B1 KR101608542 B1 KR 101608542B1
Authority
KR
South Korea
Prior art keywords
region
radiation
pump
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020107005557A
Other languages
English (en)
Korean (ko)
Other versions
KR20100057043A (ko
Inventor
매티아스 사바틸
피터 브릭
크리스토프 아이흘러
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20100057043A publication Critical patent/KR20100057043A/ko
Application granted granted Critical
Publication of KR101608542B1 publication Critical patent/KR101608542B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Luminescent Compositions (AREA)
KR1020107005557A 2007-09-24 2008-08-29 광전 소자 Expired - Fee Related KR101608542B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007045463.7 2007-09-24
DE102007045463 2007-09-24
DE102007058952.4 2007-12-07
DE102007058952A DE102007058952A1 (de) 2007-09-24 2007-12-07 Optoelektronisches Bauelement

Publications (2)

Publication Number Publication Date
KR20100057043A KR20100057043A (ko) 2010-05-28
KR101608542B1 true KR101608542B1 (ko) 2016-04-11

Family

ID=40418257

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107005557A Expired - Fee Related KR101608542B1 (ko) 2007-09-24 2008-08-29 광전 소자

Country Status (7)

Country Link
US (1) US8406265B2 (enExample)
EP (1) EP2191547B1 (enExample)
JP (1) JP5646326B2 (enExample)
KR (1) KR101608542B1 (enExample)
CN (1) CN101809832B (enExample)
DE (1) DE102007058952A1 (enExample)
WO (1) WO2009039814A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431888B1 (en) 2006-06-06 2016-08-30 Ideal Power, Inc. Single-phase to three phase converter AC motor drive
US9397580B1 (en) 2006-06-06 2016-07-19 Ideal Power, Inc. Dual link power converter
US9678519B1 (en) 2006-06-06 2017-06-13 Ideal Power, Inc. Voltage control modes for microgrid applications
US9647568B1 (en) 2013-02-15 2017-05-09 Ideal Power, Inc. Bi-directional multi-port applications
US9614458B1 (en) 2013-02-15 2017-04-04 Ideal Power, Inc. Methods for determining maximum power point tracking in power converters
US9042131B2 (en) 2013-02-15 2015-05-26 Ideal Power Inc. Power-packet-switching converter with sequenced connection to link inductor
US9219406B1 (en) 2013-02-15 2015-12-22 Ideal Power Inc. Systems and methods for assessing current in a resonant circuit
US9124095B1 (en) 2013-02-15 2015-09-01 Ideal Power Inc. Islanding detection in power converters
US9407133B1 (en) 2013-02-15 2016-08-02 Ideal Power, Inc. Active power conditioner
GB2531485B (en) 2013-12-11 2016-06-22 Ideal Power Inc Systems and methods for bidirectional device fabrication
CN106170861B (zh) 2014-01-16 2018-12-28 理想能量有限公司 对表面电荷敏感性降低的结构和方法
DE102017111938B4 (de) 2017-05-31 2022-09-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optisch gepumpte Halbleiterlaserdiode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030026312A1 (en) * 2001-07-31 2003-02-06 Clayton Richard D. Monolithically integrated optically-pumped edge-emitting semiconductor laser

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126931A (ja) * 1989-10-12 1991-05-30 Fuji Photo Film Co Ltd 光波長変換デバイス
US5301204A (en) * 1992-09-15 1994-04-05 Texas Instruments Incorporated Porous silicon as a light source for rare earth-doped CaF2 laser
US5796771A (en) * 1996-08-19 1998-08-18 The Regents Of The University Of California Miniature self-pumped monolithically integrated solid state laser
JPH11346021A (ja) * 1998-04-03 1999-12-14 Hewlett Packard Co <Hp> 発光装置およびその製造方法
EP1035623A1 (en) * 1998-12-04 2000-09-13 Interuniversitair Micro-Elektronica Centrum Vzw A device for emitting electromagnetic radiation and a method of producing such device
US8829546B2 (en) * 1999-11-19 2014-09-09 Cree, Inc. Rare earth doped layer or substrate for light conversion
JP4770058B2 (ja) * 2000-05-17 2011-09-07 日亜化学工業株式会社 発光素子及び装置
DE10108079A1 (de) * 2000-05-30 2002-09-12 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
DE10026734A1 (de) * 2000-05-30 2001-12-13 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung
US6493132B1 (en) * 2001-02-14 2002-12-10 Agere Systems Guardian Corp. Monolithic optically pumped high power semiconductor lasers and amplifiers
US6879618B2 (en) * 2001-04-11 2005-04-12 Eastman Kodak Company Incoherent light-emitting device apparatus for driving vertical laser cavity
DE10129616A1 (de) * 2001-06-20 2003-01-09 Infineon Technologies Ag Halbleiterlaser, Verfahren zum Herstellen eines Halbleiterlasers und Verfahren zum Betreiben eines Halbleiterlasers
JP4047150B2 (ja) 2002-11-28 2008-02-13 ローム株式会社 半導体発光素子
JP4819330B2 (ja) * 2003-07-31 2011-11-24 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 光ポンプビーム放射半導体装置及びその製造方法
DE10345555A1 (de) * 2003-09-30 2005-05-04 Osram Opto Semiconductors Gmbh Strahlungsemittierendes und -empfangendes Halbleiterbauelement und Verfahren zu dessen Herstellung
US6947466B2 (en) * 2004-01-29 2005-09-20 Coherent, Inc. Optically pumped edge-emitting semiconductor laser
DE102004042146A1 (de) * 2004-04-30 2006-01-26 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleitervorrichtung
US7826511B1 (en) * 2005-03-25 2010-11-02 Hrl Laboratories, Llc Optically pumped laser with an integrated optical pump
DE102005048196B4 (de) * 2005-07-29 2023-01-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
KR100809413B1 (ko) * 2005-12-08 2008-03-05 한국전자통신연구원 광검출기를 구비한 수직 공진 표면방출레이저 및 그제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030026312A1 (en) * 2001-07-31 2003-02-06 Clayton Richard D. Monolithically integrated optically-pumped edge-emitting semiconductor laser

Also Published As

Publication number Publication date
EP2191547B1 (de) 2015-11-18
EP2191547A1 (de) 2010-06-02
CN101809832A (zh) 2010-08-18
DE102007058952A1 (de) 2009-04-09
JP5646326B2 (ja) 2014-12-24
CN101809832B (zh) 2012-09-05
US8406265B2 (en) 2013-03-26
KR20100057043A (ko) 2010-05-28
US20100296538A1 (en) 2010-11-25
WO2009039814A1 (de) 2009-04-02
JP2010541195A (ja) 2010-12-24

Similar Documents

Publication Publication Date Title
KR101608542B1 (ko) 광전 소자
US7869483B2 (en) Surface emitting laser
US6515308B1 (en) Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
US7019325B2 (en) Broadband light emitting device
US5052016A (en) Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser
US6535536B2 (en) Semiconductor laser element
KR20010089540A (ko) 광전자 장치를 위한 화합물 반도체 구조
US11070028B2 (en) Semiconductor light emitting element
JP2009054637A (ja) 量子カスケードレーザ素子
US6472691B2 (en) Distributed feedback semiconductor laser device
JP2884603B2 (ja) 半導体レーザ素子
JP7479506B2 (ja) 半導体レーザ、ｌｉｄａｒシステム、および半導体レーザを有するレーザシステム
JP4045639B2 (ja) 半導体レーザおよび半導体発光素子
TW200917603A (en) Manufacturing process for a radiation emitting device and radiation emitting device
US20070153855A1 (en) Semiconductor optical device having broad optical spectral luminescence characteristic and method of manufacturing the same, as well as external resonator type semiconductor laser using the same
KR20110093839A (ko) 수직 방출 방향을 갖는 표면 방출 반도체 레이저 소자
US8536603B2 (en) Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip
US7826511B1 (en) Optically pumped laser with an integrated optical pump
KR101168283B1 (ko) 고출력 수직외부공진형 표면발광 레이저
TWM627153U (zh) 光子晶體面射型雷射器
US8208512B2 (en) Surface emitting semiconductor body with vertical emission direction and stabilized emission wavelength
JPH05211346A (ja) 面形発光素子
US20070195849A1 (en) Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating
WO2010022526A2 (en) Superluminescent diode, or amplifier chip
US20190081457A1 (en) Pumped edge emitters with metallic coatings

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20190329

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20190329

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301