DE102007058950A1 - Kantenemittierender Halbleiterlaser mit einem Wellenleiter - Google Patents
Kantenemittierender Halbleiterlaser mit einem Wellenleiter Download PDFInfo
- Publication number
- DE102007058950A1 DE102007058950A1 DE102007058950A DE102007058950A DE102007058950A1 DE 102007058950 A1 DE102007058950 A1 DE 102007058950A1 DE 102007058950 A DE102007058950 A DE 102007058950A DE 102007058950 A DE102007058950 A DE 102007058950A DE 102007058950 A1 DE102007058950 A1 DE 102007058950A1
- Authority
- DE
- Germany
- Prior art keywords
- waveguide layer
- semiconductor laser
- layer
- waveguide
- emitting semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 111
- 230000005855 radiation Effects 0.000 title claims abstract description 64
- 239000010410 layer Substances 0.000 title abstract 7
- 239000011247 coating layer Substances 0.000 title abstract 4
- 238000010168 coupling process Methods 0.000 claims description 33
- 238000005859 coupling reaction Methods 0.000 claims description 33
- 230000008878 coupling Effects 0.000 claims description 31
- 230000003287 optical effect Effects 0.000 claims description 22
- 238000005253 cladding Methods 0.000 claims description 18
- 239000002019 doping agent Substances 0.000 claims description 8
- 230000001902 propagating effect Effects 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 9
- 238000005086 pumping Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/204—Strongly index guided structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007058950A DE102007058950A1 (de) | 2007-09-28 | 2007-12-07 | Kantenemittierender Halbleiterlaser mit einem Wellenleiter |
| EP08015212A EP2043209B1 (de) | 2007-09-28 | 2008-08-28 | Kantenemittierender Halbleiterlaser mit einem Wellenleiter |
| EP11161727.0A EP2337169B1 (de) | 2007-09-28 | 2008-08-28 | Kantenemittierender Halbleiterlaser mit einem Wellenleiter |
| US12/240,493 US7813399B2 (en) | 2007-09-28 | 2008-09-29 | Edge emitting semiconductor laser comprising a waveguide |
| JP2008250993A JP5362306B2 (ja) | 2007-09-28 | 2008-09-29 | 導波体を備えるエッジ発光型半導体レーザ |
| JP2013183113A JP5611431B2 (ja) | 2007-09-28 | 2013-09-04 | 導波体を備えるエッジ発光型半導体レーザ |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007046722.4 | 2007-09-28 | ||
| DE102007046722 | 2007-09-28 | ||
| DE102007058950A DE102007058950A1 (de) | 2007-09-28 | 2007-12-07 | Kantenemittierender Halbleiterlaser mit einem Wellenleiter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102007058950A1 true DE102007058950A1 (de) | 2009-04-02 |
Family
ID=40384476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102007058950A Withdrawn DE102007058950A1 (de) | 2007-09-28 | 2007-12-07 | Kantenemittierender Halbleiterlaser mit einem Wellenleiter |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7813399B2 (https=) |
| EP (1) | EP2337169B1 (https=) |
| JP (2) | JP5362306B2 (https=) |
| DE (1) | DE102007058950A1 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012168437A1 (de) * | 2011-06-10 | 2012-12-13 | Osram Opto Semiconductors Gmbh | Kantenemittierender halbleiterlaser |
| CN110061418A (zh) * | 2018-01-19 | 2019-07-26 | 三星电子株式会社 | 半导体激光器件及其制造方法 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3631971A1 (de) * | 1985-09-20 | 1987-03-26 | Ericsson Telefon Ab L M | Optische verstaerkungsvorrichtung mit stoerschutzfilterfunktion |
| EP0416190A1 (en) | 1989-09-07 | 1991-03-13 | International Business Machines Corporation | Method for mirror passivation of semiconductor laser diodes |
| US5171707A (en) | 1990-09-13 | 1992-12-15 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor laser device using the light generated by the laser to disorder its active layer at the end surfaces thereby forming window regions |
| WO1996011503A2 (en) | 1994-10-06 | 1996-04-18 | Philips Electronics N.V. | Radiation-emitting semiconductor diode and method of manufacturing such a diode |
| US5511084A (en) * | 1994-01-19 | 1996-04-23 | Siemens Aktiengesellschaft | Tunable laser diode |
| US5721750A (en) * | 1995-04-13 | 1998-02-24 | Korea Advanced Institute Of Science And Technology | Laser diode for optoelectronic integrated circuit and a process for preparing the same |
| US6323052B1 (en) | 1997-08-13 | 2001-11-27 | Mitsubishi Chemical Corporation | Compound semiconductor light emitting device and method of fabricating the same |
| US20050094924A1 (en) * | 1998-06-24 | 2005-05-05 | Forrest Stephen R. | Twin waveguide based design for photonic integrated circuits |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4159452A (en) * | 1978-01-13 | 1979-06-26 | Bell Telephone Laboratories, Incorporated | Dual beam double cavity heterostructure laser with branching output waveguides |
| JPS5562792A (en) | 1978-10-11 | 1980-05-12 | Nec Corp | Injection type semiconductor laser element |
| JPS6225485A (ja) | 1985-07-25 | 1987-02-03 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| JP2825508B2 (ja) * | 1987-10-09 | 1998-11-18 | 株式会社日立製作所 | 半導体レーザ装置および光通信システム |
| JP2911856B2 (ja) * | 1987-10-09 | 1999-06-23 | 株式会社日立製作所 | 半導体レーザ装置 |
| JPH01100988A (ja) * | 1987-10-13 | 1989-04-19 | Sharp Corp | 半導体レーザ装置 |
| EP0332723A1 (en) | 1988-03-15 | 1989-09-20 | International Business Machines Corporation | High-power semiconductor diode laser |
| JPH02310503A (ja) * | 1989-05-26 | 1990-12-26 | Nippon Telegr & Teleph Corp <Ntt> | 半導体方向性光結合器の結合長調整方法 |
| JP2957240B2 (ja) * | 1990-07-20 | 1999-10-04 | キヤノン株式会社 | 波長可変半導体レーザ |
| JPH04237001A (ja) * | 1991-01-21 | 1992-08-25 | Nippon Telegr & Teleph Corp <Ntt> | 光デバイス |
| DE69415576T2 (de) * | 1993-03-15 | 1999-06-17 | Canon K.K., Tokio/Tokyo | Optische Vorrichtungen und optische Übertragungssystemen die diese verwenden |
| JP3302088B2 (ja) * | 1993-03-15 | 2002-07-15 | キヤノン株式会社 | 集積型光デバイスおよびそれを用いた光通信ネットワーク |
| JPH06302906A (ja) | 1993-04-12 | 1994-10-28 | Mitsubishi Electric Corp | 半導体レーザ及びその製造方法 |
| JPH07183482A (ja) * | 1993-12-22 | 1995-07-21 | Nippon Telegr & Teleph Corp <Ntt> | 光送信素子および光送受信素子 |
| JPH0815737A (ja) * | 1994-06-29 | 1996-01-19 | Oki Electric Ind Co Ltd | 方向性結合器形光変調器及びその製造方法 |
| JP3390893B2 (ja) * | 1995-02-24 | 2003-03-31 | 富士通株式会社 | 半導体レーザ装置 |
| US5528616A (en) * | 1995-04-24 | 1996-06-18 | International Business Machines Corporation | Asymmetric dual waveguide laser |
| US5668049A (en) | 1996-07-31 | 1997-09-16 | Lucent Technologies Inc. | Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur |
| JP2001350044A (ja) | 2000-06-05 | 2001-12-21 | Minolta Co Ltd | 光導波路デバイス |
| DE10046580A1 (de) * | 2000-09-20 | 2002-04-04 | Osram Opto Semiconductors Gmbh | Halbleiter-Laser |
| JP2003156644A (ja) * | 2001-11-21 | 2003-05-30 | Seiko Epson Corp | 方向性結合器および光通信用装置 |
| DE10221952B4 (de) | 2002-05-13 | 2007-07-12 | Forschungsverbund Berlin E.V. | Verfahren zur Passivierung der Spiegelflächen von optischen Halbleiterbauelementen |
| JP2006269543A (ja) * | 2005-03-22 | 2006-10-05 | Oki Electric Ind Co Ltd | 波長可変素子 |
-
2007
- 2007-12-07 DE DE102007058950A patent/DE102007058950A1/de not_active Withdrawn
-
2008
- 2008-08-28 EP EP11161727.0A patent/EP2337169B1/de active Active
- 2008-09-29 US US12/240,493 patent/US7813399B2/en active Active
- 2008-09-29 JP JP2008250993A patent/JP5362306B2/ja active Active
-
2013
- 2013-09-04 JP JP2013183113A patent/JP5611431B2/ja active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3631971A1 (de) * | 1985-09-20 | 1987-03-26 | Ericsson Telefon Ab L M | Optische verstaerkungsvorrichtung mit stoerschutzfilterfunktion |
| EP0416190A1 (en) | 1989-09-07 | 1991-03-13 | International Business Machines Corporation | Method for mirror passivation of semiconductor laser diodes |
| US5171707A (en) | 1990-09-13 | 1992-12-15 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor laser device using the light generated by the laser to disorder its active layer at the end surfaces thereby forming window regions |
| US5511084A (en) * | 1994-01-19 | 1996-04-23 | Siemens Aktiengesellschaft | Tunable laser diode |
| WO1996011503A2 (en) | 1994-10-06 | 1996-04-18 | Philips Electronics N.V. | Radiation-emitting semiconductor diode and method of manufacturing such a diode |
| US5721750A (en) * | 1995-04-13 | 1998-02-24 | Korea Advanced Institute Of Science And Technology | Laser diode for optoelectronic integrated circuit and a process for preparing the same |
| US6323052B1 (en) | 1997-08-13 | 2001-11-27 | Mitsubishi Chemical Corporation | Compound semiconductor light emitting device and method of fabricating the same |
| US20050094924A1 (en) * | 1998-06-24 | 2005-05-05 | Forrest Stephen R. | Twin waveguide based design for photonic integrated circuits |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012168437A1 (de) * | 2011-06-10 | 2012-12-13 | Osram Opto Semiconductors Gmbh | Kantenemittierender halbleiterlaser |
| DE102011103952A1 (de) * | 2011-06-10 | 2012-12-13 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser |
| JP2014516211A (ja) * | 2011-06-10 | 2014-07-07 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 端面発光型半導体レーザ |
| US8995491B2 (en) | 2011-06-10 | 2015-03-31 | Osram Opto Semiconductors Gmbh | Edge-emitting semiconductor laser |
| DE102011103952B4 (de) | 2011-06-10 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Kantenemittierender Halbleiterlaser |
| CN110061418A (zh) * | 2018-01-19 | 2019-07-26 | 三星电子株式会社 | 半导体激光器件及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009088532A (ja) | 2009-04-23 |
| EP2337169A2 (de) | 2011-06-22 |
| EP2337169A3 (de) | 2011-06-29 |
| JP5362306B2 (ja) | 2013-12-11 |
| EP2337169B1 (de) | 2017-03-22 |
| JP5611431B2 (ja) | 2014-10-22 |
| US7813399B2 (en) | 2010-10-12 |
| US20090147815A1 (en) | 2009-06-11 |
| JP2014013926A (ja) | 2014-01-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| R005 | Application deemed withdrawn due to failure to request examination | ||
| R005 | Application deemed withdrawn due to failure to request examination |
Effective date: 20141209 |