DE102007023444B4 - Einrichtung zur Erzeugung eines Gasvorhangs für plasmabasierte EUV-Strahlungsquellen - Google Patents

Einrichtung zur Erzeugung eines Gasvorhangs für plasmabasierte EUV-Strahlungsquellen Download PDF

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Publication number
DE102007023444B4
DE102007023444B4 DE102007023444A DE102007023444A DE102007023444B4 DE 102007023444 B4 DE102007023444 B4 DE 102007023444B4 DE 102007023444 A DE102007023444 A DE 102007023444A DE 102007023444 A DE102007023444 A DE 102007023444A DE 102007023444 B4 DE102007023444 B4 DE 102007023444B4
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DE
Germany
Prior art keywords
gas
plasma
nozzle
radiation
generating
Prior art date
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DE102007023444A
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German (de)
English (en)
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DE102007023444A1 (de
Inventor
Duc Chinh Prof. Dr. Tran
Jesko Dr. Brudermann
Björn Mader
Gilbert Dornieden
Thomas Brauner
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Ushio Denki KK
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Xtreme Technologies GmbH
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Publication date
Application filed by Xtreme Technologies GmbH filed Critical Xtreme Technologies GmbH
Priority to DE102007023444A priority Critical patent/DE102007023444B4/de
Priority to JP2008125983A priority patent/JP2008300351A/ja
Priority to US12/120,536 priority patent/US7750327B2/en
Priority to NL2001585A priority patent/NL2001585C2/nl
Publication of DE102007023444A1 publication Critical patent/DE102007023444A1/de
Application granted granted Critical
Publication of DE102007023444B4 publication Critical patent/DE102007023444B4/de
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus

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  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Nozzles (AREA)
DE102007023444A 2007-05-16 2007-05-16 Einrichtung zur Erzeugung eines Gasvorhangs für plasmabasierte EUV-Strahlungsquellen Active DE102007023444B4 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102007023444A DE102007023444B4 (de) 2007-05-16 2007-05-16 Einrichtung zur Erzeugung eines Gasvorhangs für plasmabasierte EUV-Strahlungsquellen
JP2008125983A JP2008300351A (ja) 2007-05-16 2008-05-13 プラズマベースのｅｕｖ放射線源用のガスカーテンを生成する装置
US12/120,536 US7750327B2 (en) 2007-05-16 2008-05-14 Device for the generation of a gas curtain for plasma-based EUV radiation sources
NL2001585A NL2001585C2 (nl) 2007-05-16 2008-05-15 Inrichting voor het tot stand brengen van een gasgordijn voor op plasma gebaseerde euv-stralingsbronnen.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007023444A DE102007023444B4 (de) 2007-05-16 2007-05-16 Einrichtung zur Erzeugung eines Gasvorhangs für plasmabasierte EUV-Strahlungsquellen

Publications (2)

Publication Number Publication Date
DE102007023444A1 DE102007023444A1 (de) 2008-11-20
DE102007023444B4 true DE102007023444B4 (de) 2009-04-09

Family

ID=39868866

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007023444A Active DE102007023444B4 (de) 2007-05-16 2007-05-16 Einrichtung zur Erzeugung eines Gasvorhangs für plasmabasierte EUV-Strahlungsquellen

Country Status (4)

Country Link
US (1) US7750327B2 (https=)
JP (1) JP2008300351A (https=)
DE (1) DE102007023444B4 (https=)
NL (1) NL2001585C2 (https=)

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US10953493B2 (en) * 2017-07-07 2021-03-23 Arvinmeritor Technology, Llc Gas delivery system

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JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
NL2004085A (en) * 2009-03-11 2010-09-14 Asml Netherlands Bv Radiation source, lithographic apparatus, and device manufacturing method.
CN102484938B (zh) 2009-09-01 2014-12-10 株式会社Ihi 等离子体光源
JP2011054376A (ja) * 2009-09-01 2011-03-17 Ihi Corp Ｌｐｐ方式のｅｕｖ光源とその発生方法
JP6057221B2 (ja) * 2011-04-05 2017-01-11 イーティーエイチ・チューリッヒ 液滴供給装置および該液滴供給装置を備える光源
US9516730B2 (en) * 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
NL2010965A (en) 2012-06-22 2013-12-24 Asml Netherlands Bv Radiation source and lithographic apparatus.
DE102012212394A1 (de) * 2012-07-16 2013-05-29 Carl Zeiss Smt Gmbh Abtrennvorrichtung und abtrennverfahren für projektionsbelichtungsanlagen
DE102012213927A1 (de) 2012-08-07 2013-06-06 Carl Zeiss Smt Gmbh Vorrichtung zur Erzeugung eines Gasvorhangs, Gasdüse und EUV-Lithographiesystem damit
KR20140036538A (ko) 2012-09-17 2014-03-26 삼성전자주식회사 극자외선 생성 장치, 이를 포함하는 노광 장치 및 이러한 노광 장치를 사용해서 제조된 전자 디바이스
US9585236B2 (en) 2013-05-03 2017-02-28 Media Lario Srl Sn vapor EUV LLP source system for EUV lithography
US10101664B2 (en) 2014-11-01 2018-10-16 Kla-Tencor Corporation Apparatus and methods for optics protection from debris in plasma-based light source
US10217625B2 (en) * 2015-03-11 2019-02-26 Kla-Tencor Corporation Continuous-wave laser-sustained plasma illumination source
US10631392B2 (en) * 2018-04-30 2020-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. EUV collector contamination prevention
JP7467174B2 (ja) * 2020-03-16 2024-04-15 ギガフォトン株式会社 チャンバ装置、極端紫外光生成装置、及び電子デバイスの製造方法
US12158576B2 (en) 2021-05-28 2024-12-03 Kla Corporation Counterflow gas nozzle for contamination mitigation in extreme ultraviolet inspection systems
JP7637579B2 (ja) * 2021-06-30 2025-02-28 Ｊｓｗアクティナシステム株式会社 レーザ照射装置、情報処理方法、及びプログラム
JP2024005835A (ja) * 2022-06-30 2024-01-17 キヤノン株式会社 光源装置、リソグラフィ装置、及び物品の製造方法

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WO2003026363A1 (en) * 2001-09-18 2003-03-27 Euv Limited Liability Corporation Discharge source with gas curtain for protecting optics from particles
EP1391785A1 (en) * 2002-08-23 2004-02-25 ASML Netherlands B.V. Particle barrier for use in a lithographic projection apparatus
US6881971B2 (en) * 2002-04-05 2005-04-19 Xtreme Technologies Gmbh Arrangement for the suppression of particle emission in the generation of radiation based on hot plasma
DE102004029354A1 (de) * 2004-05-04 2005-12-01 Linde Ag Verfahren und Vorrichtung zum Kaltgasspritzen
US20070080307A1 (en) * 2005-10-07 2007-04-12 Xtreme Technologies Gmbh Arrangement for the suppression of unwanted spectral components in a plasma-based euv radiation source

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DE3734137A1 (de) * 1987-10-09 1989-04-20 Pfaff Ind Masch Luftfuehrungsvorrichtung fuer eine schweissmaschine zum verarbeiten von kunststoffolien
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AU3957599A (en) * 1998-05-29 1999-12-20 Nikon Corporation Laser-excited plasma light source, exposure apparatus and its manufacturing method, and device manufacturing method
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JP2006054270A (ja) * 2004-08-10 2006-02-23 Tokyo Institute Of Technology 極紫外光発生装置
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1274287A1 (en) * 2001-07-05 2003-01-08 Canon Kabushiki Kaisha Debris removing system for use in X-ray source
WO2003026363A1 (en) * 2001-09-18 2003-03-27 Euv Limited Liability Corporation Discharge source with gas curtain for protecting optics from particles
US6881971B2 (en) * 2002-04-05 2005-04-19 Xtreme Technologies Gmbh Arrangement for the suppression of particle emission in the generation of radiation based on hot plasma
EP1391785A1 (en) * 2002-08-23 2004-02-25 ASML Netherlands B.V. Particle barrier for use in a lithographic projection apparatus
DE102004029354A1 (de) * 2004-05-04 2005-12-01 Linde Ag Verfahren und Vorrichtung zum Kaltgasspritzen
US20070080307A1 (en) * 2005-10-07 2007-04-12 Xtreme Technologies Gmbh Arrangement for the suppression of unwanted spectral components in a plasma-based euv radiation source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10953493B2 (en) * 2017-07-07 2021-03-23 Arvinmeritor Technology, Llc Gas delivery system

Also Published As

Publication number Publication date
NL2001585C2 (nl) 2011-09-13
US20080283779A1 (en) 2008-11-20
JP2008300351A (ja) 2008-12-11
NL2001585A1 (nl) 2008-11-18
DE102007023444A1 (de) 2008-11-20
US7750327B2 (en) 2010-07-06

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Representative=s name: PATENTANWAELTE OEHMKE UND KOLLEGEN, 07743 JENA, DE

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R081 Change of applicant/patentee

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Free format text: FORMER OWNER: XTREME TECHNOLOGIES GMBH, 07745 JENA, DE

Effective date: 20110712

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