DE102007008997A1 - Zusammensetzungen zum chemisch-mechanischen Polieren von Siliziumdioxid und Siliziumnitrid - Google Patents

Zusammensetzungen zum chemisch-mechanischen Polieren von Siliziumdioxid und Siliziumnitrid Download PDF

Info

Publication number
DE102007008997A1
DE102007008997A1 DE102007008997A DE102007008997A DE102007008997A1 DE 102007008997 A1 DE102007008997 A1 DE 102007008997A1 DE 102007008997 A DE102007008997 A DE 102007008997A DE 102007008997 A DE102007008997 A DE 102007008997A DE 102007008997 A1 DE102007008997 A1 DE 102007008997A1
Authority
DE
Germany
Prior art keywords
weight
polyvinylpyrrolidone
mol
composition
composition according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102007008997A
Other languages
German (de)
English (en)
Inventor
Sarah J. Lane
Charles Wilmington Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE102007008997A1 publication Critical patent/DE102007008997A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE102007008997A 2006-03-08 2007-02-23 Zusammensetzungen zum chemisch-mechanischen Polieren von Siliziumdioxid und Siliziumnitrid Withdrawn DE102007008997A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/372,321 US20070210278A1 (en) 2006-03-08 2006-03-08 Compositions for chemical mechanical polishing silicon dioxide and silicon nitride
US11/372,321 2006-03-08

Publications (1)

Publication Number Publication Date
DE102007008997A1 true DE102007008997A1 (de) 2007-09-13

Family

ID=38336245

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007008997A Withdrawn DE102007008997A1 (de) 2006-03-08 2007-02-23 Zusammensetzungen zum chemisch-mechanischen Polieren von Siliziumdioxid und Siliziumnitrid

Country Status (7)

Country Link
US (1) US20070210278A1 (enExample)
JP (1) JP2007273973A (enExample)
KR (1) KR20070092109A (enExample)
CN (1) CN101054498A (enExample)
DE (1) DE102007008997A1 (enExample)
FR (1) FR2898361A1 (enExample)
TW (1) TW200736375A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182179A (ja) * 2006-12-27 2008-08-07 Hitachi Chem Co Ltd 研磨剤用添加剤、研磨剤、基板の研磨方法及び電子部品
DE102006061891A1 (de) * 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
US8366959B2 (en) * 2008-09-26 2013-02-05 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
JP5878020B2 (ja) * 2009-11-11 2016-03-08 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
JP6088505B2 (ja) * 2012-05-30 2017-03-01 株式会社クラレ 化学機械研磨用スラリーおよび化学機械研磨方法
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
JP6268069B2 (ja) * 2014-09-12 2018-01-24 信越化学工業株式会社 研磨組成物及び研磨方法
WO2016158648A1 (ja) * 2015-03-30 2016-10-06 Jsr株式会社 化学機械研磨用処理組成物、化学機械研磨方法および洗浄方法
JP6886469B2 (ja) * 2015-12-22 2021-06-16 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ 化学機械研磨後の洗浄組成物
CN108117840B (zh) * 2016-11-29 2021-09-21 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
US10954411B2 (en) * 2019-05-16 2021-03-23 Rohm And Haas Electronic Materials Cmp Holdings Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide
CN120098551A (zh) * 2023-11-29 2025-06-06 安集微电子科技（上海）股份有限公司 一种化学机械抛光组合物

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100583842B1 (ko) * 1998-02-24 2006-05-26 쇼와 덴코 가부시키가이샤 반도체 장치 연마용 연마재 조성물 및 이를 이용한 반도체장치의 제조방법
GB9924502D0 (en) * 1999-10-15 1999-12-15 Biocompatibles Ltd Polymer blend materials
US6641632B1 (en) * 2002-11-18 2003-11-04 International Business Machines Corporation Polishing compositions and use thereof
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US20060083694A1 (en) * 2004-08-07 2006-04-20 Cabot Corporation Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
US20070176141A1 (en) * 2006-01-30 2007-08-02 Lane Sarah J Compositions and methods for chemical mechanical polishing interlevel dielectric layers

Also Published As

Publication number Publication date
TW200736375A (en) 2007-10-01
US20070210278A1 (en) 2007-09-13
CN101054498A (zh) 2007-10-17
JP2007273973A (ja) 2007-10-18
FR2898361A1 (fr) 2007-09-14
KR20070092109A (ko) 2007-09-12

Similar Documents

Publication Publication Date Title
DE102007008997A1 (de) Zusammensetzungen zum chemisch-mechanischen Polieren von Siliziumdioxid und Siliziumnitrid
DE102005033951A1 (de) Zusammensetzungen und Verfahren zum chemisch-mechanischen Polieren von Siliziumdioxid und Siliziumnitrid
DE69728691T2 (de) Zusammensetzung zum chemisch-mechanischen polieren von oxyden
DE60023635T2 (de) Schlamm für chemisch-mechanisches Polieren von Siliciumdioxid
DE602004012793T2 (de) Chemisch-mechanisches Polierverfahren für STI
DE102007004120A1 (de) Zusammensetzungen und Verfahren für das chemisch-mechanische Polieren von Zwischenschicht-Dielektrikumschichten
DE102005058272A1 (de) Mehrstufige Verfahren zum chemisch-mechanischen Polieren von Siliziumdioxid und Siliziumnitrid
DE102005006614A1 (de) Zusammensetzungen und Verfahren für das chemisch-mechanische Polieren von Siliciumdioxid und Siliciumnitrid
KR101068068B1 (ko) 반도체용 연마제, 그 제조 방법 및 연마 방법
DE602004012674T2 (de) Zusammensetzung zum Polieren von Halbleiterschichten
DE102010018423A1 (de) Verfahren zum chemisch-mechanischen Polieren eines Substrats
DE112009000403B4 (de) Schlamm zum chemisch-mechanischen Polieren (CMP-Schlamm), die Verwendung desselben und ein Polierverfahren, das den Schritt des Polierens einer Targetschicht eines Halbleitersubstrats mit dem CMP-Schlamm einschließt
DE102018006078A1 (de) Chemisch-mechanisches polierverfahren für wolfram
DE102010051045A1 (de) Zusammensetzung zum chemisch-mechanischen Polieren und damit zusammenhängende Verfahren
DE102005016554A1 (de) Polierlösung für Barrieren
TW201213469A (en) Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices
KR20130133175A (ko) Ｎ-치환 디아제늄 디옥시드 및/또는 ｎ´-히드록시-디아제늄 옥시드 염을 함유하는 수성 폴리싱 조성물
EP1217651A1 (de) Saure Poliersuspension für das chemisch-mechanische Polieren von SiO2-Isolationsschichten
DE102011013981A1 (de) Verfahren zum Polieren eines Substrats, das Polysilizium, Siliziumoxid und Siliziumnitrid umfasst
JP2023107781A (ja) 研磨用組成物
DE102011013978A1 (de) Verfahren zum Polieren eines Substrats, das Polysilizium und mindestens eines von Siliziumnitrid umfasst
DE102015007226A1 (de) Chemisch-mechanische Polierzusammensetzung und Verfahren zum Polieren von Wolfram
DE602004007718T2 (de) Chemisch-mechanisches Poliermittel-Kit und chemisch-mechanisches Polierverfahren unter Verwendung desselben
DE102011104161B4 (de) Zusammensetzung und Verfahren zum chemisch-mechanischen Polieren
CN1826397B (zh) 用于化学机械抛光的二氧化铈研磨剂

Legal Events

Date Code Title Description
8139 Disposal/non-payment of the annual fee