CN101054498A - 用于对二氧化硅和氮化硅进行化学机械抛光的组合物 - Google Patents

用于对二氧化硅和氮化硅进行化学机械抛光的组合物 Download PDF

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Publication number
CN101054498A
CN101054498A CNA2007100877140A CN200710087714A CN101054498A CN 101054498 A CN101054498 A CN 101054498A CN A2007100877140 A CNA2007100877140 A CN A2007100877140A CN 200710087714 A CN200710087714 A CN 200710087714A CN 101054498 A CN101054498 A CN 101054498A
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CN
China
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weight
composition
polyvinylpyrrolidone
slurries
acid
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Pending
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CNA2007100877140A
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English (en)
Chinese (zh)
Inventor
S·J·兰
C·余
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ROHM AND HAAS ELECTRONIC MATER
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ROHM AND HAAS ELECTRONIC MATER
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Application filed by ROHM AND HAAS ELECTRONIC MATER filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN101054498A publication Critical patent/CN101054498A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNA2007100877140A 2006-03-08 2007-03-07 用于对二氧化硅和氮化硅进行化学机械抛光的组合物 Pending CN101054498A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/372,321 2006-03-08
US11/372,321 US20070210278A1 (en) 2006-03-08 2006-03-08 Compositions for chemical mechanical polishing silicon dioxide and silicon nitride

Publications (1)

Publication Number Publication Date
CN101054498A true CN101054498A (zh) 2007-10-17

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ID=38336245

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007100877140A Pending CN101054498A (zh) 2006-03-08 2007-03-07 用于对二氧化硅和氮化硅进行化学机械抛光的组合物

Country Status (7)

Country Link
US (1) US20070210278A1 (enExample)
JP (1) JP2007273973A (enExample)
KR (1) KR20070092109A (enExample)
CN (1) CN101054498A (enExample)
DE (1) DE102007008997A1 (enExample)
FR (1) FR2898361A1 (enExample)
TW (1) TW200736375A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108117840A (zh) * 2016-11-29 2018-06-05 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
CN111944428A (zh) * 2019-05-16 2020-11-17 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光组合物以及优先于二氧化硅抛光氮化硅并同时抑制对二氧化硅的损伤的方法
WO2025113120A1 (zh) * 2023-11-29 2025-06-05 安集微电子科技（上海）股份有限公司 一种化学机械抛光组合物

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182179A (ja) * 2006-12-27 2008-08-07 Hitachi Chem Co Ltd 研磨剤用添加剤、研磨剤、基板の研磨方法及び電子部品
DE102006061891A1 (de) * 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
JP5632378B2 (ja) * 2008-09-26 2014-11-26 ロディア オペレーションズＲｈｏｄｉａ Ｏｐｅｒａｔｉｏｎｓ 化学機械研磨用研磨剤組成物及びその使用法
JP5878020B2 (ja) 2009-11-11 2016-03-08 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
EP2858097B1 (en) 2012-05-30 2019-02-27 Kuraray Co., Ltd. Slurry for chemical mechanical polishing and chemical mechanical polishing method
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
JP6268069B2 (ja) * 2014-09-12 2018-01-24 信越化学工業株式会社 研磨組成物及び研磨方法
CN107210214A (zh) * 2015-03-30 2017-09-26 Jsr株式会社 化学机械研磨用处理组合物、化学机械研磨方法及清洗方法
WO2017108748A2 (en) * 2015-12-22 2017-06-29 Basf Se Composition for post chemical-mechanical-polishing cleaning

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE266071T1 (de) * 1998-02-24 2004-05-15 Showa Denko Kk Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben
GB9924502D0 (en) * 1999-10-15 1999-12-15 Biocompatibles Ltd Polymer blend materials
US6641632B1 (en) * 2002-11-18 2003-11-04 International Business Machines Corporation Polishing compositions and use thereof
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US20060083694A1 (en) * 2004-08-07 2006-04-20 Cabot Corporation Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
US20070176141A1 (en) * 2006-01-30 2007-08-02 Lane Sarah J Compositions and methods for chemical mechanical polishing interlevel dielectric layers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108117840A (zh) * 2016-11-29 2018-06-05 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
WO2018099111A1 (zh) * 2016-11-29 2018-06-07 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
CN108117840B (zh) * 2016-11-29 2021-09-21 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
CN111944428A (zh) * 2019-05-16 2020-11-17 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光组合物以及优先于二氧化硅抛光氮化硅并同时抑制对二氧化硅的损伤的方法
WO2025113120A1 (zh) * 2023-11-29 2025-06-05 安集微电子科技（上海）股份有限公司 一种化学机械抛光组合物

Also Published As

Publication number Publication date
FR2898361A1 (fr) 2007-09-14
DE102007008997A1 (de) 2007-09-13
TW200736375A (en) 2007-10-01
US20070210278A1 (en) 2007-09-13
KR20070092109A (ko) 2007-09-12
JP2007273973A (ja) 2007-10-18

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Open date: 20071017