CN101054498A - 用于对二氧化硅和氮化硅进行化学机械抛光的组合物 - Google Patents

用于对二氧化硅和氮化硅进行化学机械抛光的组合物 Download PDF

Info

Publication number
CN101054498A
CN101054498A CNA2007100877140A CN200710087714A CN101054498A CN 101054498 A CN101054498 A CN 101054498A CN A2007100877140 A CNA2007100877140 A CN A2007100877140A CN 200710087714 A CN200710087714 A CN 200710087714A CN 101054498 A CN101054498 A CN 101054498A
Authority
CN
China
Prior art keywords
weight
composition
polyvinylpyrrolidone
average molecular
generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007100877140A
Other languages
English (en)
Chinese (zh)
Inventor
S·J·兰
C·余
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
Original Assignee
ROHM AND HAAS ELECTRONIC MATER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ROHM AND HAAS ELECTRONIC MATER filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN101054498A publication Critical patent/CN101054498A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNA2007100877140A 2006-03-08 2007-03-07 用于对二氧化硅和氮化硅进行化学机械抛光的组合物 Pending CN101054498A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/372,321 US20070210278A1 (en) 2006-03-08 2006-03-08 Compositions for chemical mechanical polishing silicon dioxide and silicon nitride
US11/372,321 2006-03-08

Publications (1)

Publication Number Publication Date
CN101054498A true CN101054498A (zh) 2007-10-17

Family

ID=38336245

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007100877140A Pending CN101054498A (zh) 2006-03-08 2007-03-07 用于对二氧化硅和氮化硅进行化学机械抛光的组合物

Country Status (7)

Country Link
US (1) US20070210278A1 (enExample)
JP (1) JP2007273973A (enExample)
KR (1) KR20070092109A (enExample)
CN (1) CN101054498A (enExample)
DE (1) DE102007008997A1 (enExample)
FR (1) FR2898361A1 (enExample)
TW (1) TW200736375A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108117840A (zh) * 2016-11-29 2018-06-05 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
CN111944428A (zh) * 2019-05-16 2020-11-17 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光组合物以及优先于二氧化硅抛光氮化硅并同时抑制对二氧化硅的损伤的方法
WO2025113120A1 (zh) * 2023-11-29 2025-06-05 安集微电子科技（上海）股份有限公司 一种化学机械抛光组合物

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182179A (ja) * 2006-12-27 2008-08-07 Hitachi Chem Co Ltd 研磨剤用添加剤、研磨剤、基板の研磨方法及び電子部品
DE102006061891A1 (de) * 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
US8366959B2 (en) * 2008-09-26 2013-02-05 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
JP5878020B2 (ja) * 2009-11-11 2016-03-08 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
JP6088505B2 (ja) * 2012-05-30 2017-03-01 株式会社クラレ 化学機械研磨用スラリーおよび化学機械研磨方法
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
JP6268069B2 (ja) * 2014-09-12 2018-01-24 信越化学工業株式会社 研磨組成物及び研磨方法
WO2016158648A1 (ja) * 2015-03-30 2016-10-06 Jsr株式会社 化学機械研磨用処理組成物、化学機械研磨方法および洗浄方法
JP6886469B2 (ja) * 2015-12-22 2021-06-16 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ 化学機械研磨後の洗浄組成物

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100583842B1 (ko) * 1998-02-24 2006-05-26 쇼와 덴코 가부시키가이샤 반도체 장치 연마용 연마재 조성물 및 이를 이용한 반도체장치의 제조방법
GB9924502D0 (en) * 1999-10-15 1999-12-15 Biocompatibles Ltd Polymer blend materials
US6641632B1 (en) * 2002-11-18 2003-11-04 International Business Machines Corporation Polishing compositions and use thereof
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US20060083694A1 (en) * 2004-08-07 2006-04-20 Cabot Corporation Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
US20070176141A1 (en) * 2006-01-30 2007-08-02 Lane Sarah J Compositions and methods for chemical mechanical polishing interlevel dielectric layers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108117840A (zh) * 2016-11-29 2018-06-05 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
WO2018099111A1 (zh) * 2016-11-29 2018-06-07 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
CN108117840B (zh) * 2016-11-29 2021-09-21 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
CN111944428A (zh) * 2019-05-16 2020-11-17 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光组合物以及优先于二氧化硅抛光氮化硅并同时抑制对二氧化硅的损伤的方法
WO2025113120A1 (zh) * 2023-11-29 2025-06-05 安集微电子科技（上海）股份有限公司 一种化学机械抛光组合物

Also Published As

Publication number Publication date
TW200736375A (en) 2007-10-01
US20070210278A1 (en) 2007-09-13
JP2007273973A (ja) 2007-10-18
DE102007008997A1 (de) 2007-09-13
FR2898361A1 (fr) 2007-09-14
KR20070092109A (ko) 2007-09-12

Similar Documents

Publication Publication Date Title
CN101054498A (zh) 用于对二氧化硅和氮化硅进行化学机械抛光的组合物
CN100350567C (zh) 化学机械抛光二氧化硅和氮化硅的组合物和方法
CN100339420C (zh) 化学机械抛光氧化硅和氮化硅的组合物与方法
JP5016220B2 (ja) 窒化ケイ素上の二酸化ケイ素をケミカルメカニカル研磨するための多工程法
TWI296282B (en) Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
CN102482555B (zh) 化学机械抛光组合物以及用于抑制多晶硅移除速率的方法
CN110317539B (zh) 阻挡物钌的化学机械抛光浆料
CN1422314A (zh) 用于优先除去氧化硅的系统
CN101012357A (zh) 用来化学机械抛光层间介电层的组合物和方法
JP2005191548A (ja) シリカ及び窒化ケイ素のケミカルメカニカルポリッシングのための組成物及び方法
JP4151178B2 (ja) 化学機械研磨用水系分散体の製造方法
CN1837321A (zh) 化学机械抛光层间介电层的组合物和方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20071017