TW200736375A - Compositions for chemical mechanical polishing silicon dioxide and silicon nitride - Google Patents
Compositions for chemical mechanical polishing silicon dioxide and silicon nitrideInfo
- Publication number
- TW200736375A TW200736375A TW096105646A TW96105646A TW200736375A TW 200736375 A TW200736375 A TW 200736375A TW 096105646 A TW096105646 A TW 096105646A TW 96105646 A TW96105646 A TW 96105646A TW 200736375 A TW200736375 A TW 200736375A
- Authority
- TW
- Taiwan
- Prior art keywords
- compositions
- silicon nitride
- mechanical polishing
- chemical mechanical
- silicon dioxide
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 title abstract 2
- 239000000203 mixture Substances 0.000 title abstract 2
- 238000005498 polishing Methods 0.000 title abstract 2
- 239000000377 silicon dioxide Substances 0.000 title abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 abstract 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 abstract 2
- 239000001267 polyvinylpyrrolidone Substances 0.000 abstract 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract 1
- 150000001767 cationic compounds Chemical class 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/372,321 US20070210278A1 (en) | 2006-03-08 | 2006-03-08 | Compositions for chemical mechanical polishing silicon dioxide and silicon nitride |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200736375A true TW200736375A (en) | 2007-10-01 |
Family
ID=38336245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096105646A TW200736375A (en) | 2006-03-08 | 2007-02-15 | Compositions for chemical mechanical polishing silicon dioxide and silicon nitride |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20070210278A1 (enExample) |
| JP (1) | JP2007273973A (enExample) |
| KR (1) | KR20070092109A (enExample) |
| CN (1) | CN101054498A (enExample) |
| DE (1) | DE102007008997A1 (enExample) |
| FR (1) | FR2898361A1 (enExample) |
| TW (1) | TW200736375A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008182179A (ja) * | 2006-12-27 | 2008-08-07 | Hitachi Chem Co Ltd | 研磨剤用添加剤、研磨剤、基板の研磨方法及び電子部品 |
| DE102006061891A1 (de) * | 2006-12-28 | 2008-07-03 | Basf Se | Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid |
| KR101678114B1 (ko) * | 2008-09-26 | 2016-11-21 | 로디아 오퍼레이션스 | 화학적 기계적 폴리싱용 연마제 조성물 및 그의 이용 방법 |
| US9536752B2 (en) | 2009-11-11 | 2017-01-03 | Kuraray Co., Ltd. | Slurry for chemical mechanical polishing and polishing method for substrate using same |
| CN102464946B (zh) * | 2010-11-19 | 2015-05-27 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其应用 |
| TWI573864B (zh) * | 2012-03-14 | 2017-03-11 | 卡博特微電子公司 | 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物 |
| US9437446B2 (en) | 2012-05-30 | 2016-09-06 | Kuraray Co., Ltd. | Slurry for chemical mechanical polishing and chemical mechanical polishing method |
| US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
| JP6268069B2 (ja) * | 2014-09-12 | 2018-01-24 | 信越化学工業株式会社 | 研磨組成物及び研磨方法 |
| CN107210214A (zh) * | 2015-03-30 | 2017-09-26 | Jsr株式会社 | 化学机械研磨用处理组合物、化学机械研磨方法及清洗方法 |
| EP3394879A2 (en) * | 2015-12-22 | 2018-10-31 | Basf Se | Composition for post chemical-mechanical-polishing cleaning |
| CN108117840B (zh) * | 2016-11-29 | 2021-09-21 | 安集微电子科技（上海）股份有限公司 | 一种氮化硅化学机械抛光液 |
| US10954411B2 (en) * | 2019-05-16 | 2021-03-23 | Rohm And Haas Electronic Materials Cmp Holdings | Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide |
| CN120098551A (zh) * | 2023-11-29 | 2025-06-06 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光组合物 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69917010T2 (de) * | 1998-02-24 | 2005-04-07 | Showa Denko K.K. | Schleifmittelzusammensetzung zum polieren eines halbleiterbauteils und herstellung des halbleiterbauteils mit derselben |
| GB9924502D0 (en) * | 1999-10-15 | 1999-12-15 | Biocompatibles Ltd | Polymer blend materials |
| US6641632B1 (en) * | 2002-11-18 | 2003-11-04 | International Business Machines Corporation | Polishing compositions and use thereof |
| US20050090104A1 (en) * | 2003-10-27 | 2005-04-28 | Kai Yang | Slurry compositions for chemical mechanical polishing of copper and barrier films |
| US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
| US20060021972A1 (en) * | 2004-07-28 | 2006-02-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride |
| US20060083694A1 (en) * | 2004-08-07 | 2006-04-20 | Cabot Corporation | Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same |
| JP2006100538A (ja) * | 2004-09-29 | 2006-04-13 | Fuji Photo Film Co Ltd | 研磨用組成物及びそれを用いた研磨方法 |
| US20070176141A1 (en) * | 2006-01-30 | 2007-08-02 | Lane Sarah J | Compositions and methods for chemical mechanical polishing interlevel dielectric layers |
-
2006
- 2006-03-08 US US11/372,321 patent/US20070210278A1/en not_active Abandoned
-
2007
- 2007-02-15 TW TW096105646A patent/TW200736375A/zh unknown
- 2007-02-23 DE DE102007008997A patent/DE102007008997A1/de not_active Withdrawn
- 2007-03-02 KR KR1020070020879A patent/KR20070092109A/ko not_active Withdrawn
- 2007-03-07 CN CNA2007100877140A patent/CN101054498A/zh active Pending
- 2007-03-08 JP JP2007058028A patent/JP2007273973A/ja active Pending
- 2007-03-08 FR FR0753722A patent/FR2898361A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007273973A (ja) | 2007-10-18 |
| KR20070092109A (ko) | 2007-09-12 |
| CN101054498A (zh) | 2007-10-17 |
| DE102007008997A1 (de) | 2007-09-13 |
| FR2898361A1 (fr) | 2007-09-14 |
| US20070210278A1 (en) | 2007-09-13 |
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