KR20070092109A - 실리콘 다이옥사이드 및 실리콘 니트리드를 화학적 기계적폴리싱하기 위한 조성물 - Google Patents

실리콘 다이옥사이드 및 실리콘 니트리드를 화학적 기계적폴리싱하기 위한 조성물 Download PDF

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Publication number
KR20070092109A
KR20070092109A KR1020070020879A KR20070020879A KR20070092109A KR 20070092109 A KR20070092109 A KR 20070092109A KR 1020070020879 A KR1020070020879 A KR 1020070020879A KR 20070020879 A KR20070020879 A KR 20070020879A KR 20070092109 A KR20070092109 A KR 20070092109A
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South Korea
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composition
polyvinylpyrrolidone
gen
mol
weight
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Withdrawn
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KR1020070020879A
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English (en)
Korean (ko)
Inventor
사라 제이. 레인
찰스 유
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Publication of KR20070092109A publication Critical patent/KR20070092109A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020070020879A 2006-03-08 2007-03-02 실리콘 다이옥사이드 및 실리콘 니트리드를 화학적 기계적폴리싱하기 위한 조성물 Withdrawn KR20070092109A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/372,321 US20070210278A1 (en) 2006-03-08 2006-03-08 Compositions for chemical mechanical polishing silicon dioxide and silicon nitride
US11/372,321 2006-03-08

Publications (1)

Publication Number Publication Date
KR20070092109A true KR20070092109A (ko) 2007-09-12

Family

ID=38336245

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070020879A Withdrawn KR20070092109A (ko) 2006-03-08 2007-03-02 실리콘 다이옥사이드 및 실리콘 니트리드를 화학적 기계적폴리싱하기 위한 조성물

Country Status (7)

Country Link
US (1) US20070210278A1 (enExample)
JP (1) JP2007273973A (enExample)
KR (1) KR20070092109A (enExample)
CN (1) CN101054498A (enExample)
DE (1) DE102007008997A1 (enExample)
FR (1) FR2898361A1 (enExample)
TW (1) TW200736375A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110076969A (ko) * 2008-09-26 2011-07-06 로디아 오퍼레이션스 화학적 기계적 폴리싱용 연마제 조성물 및 그의 이용 방법
KR20170054397A (ko) * 2014-09-12 2017-05-17 신에쓰 가가꾸 고교 가부시끼가이샤 연마조성물 및 연마방법

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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JP2008182179A (ja) * 2006-12-27 2008-08-07 Hitachi Chem Co Ltd 研磨剤用添加剤、研磨剤、基板の研磨方法及び電子部品
DE102006061891A1 (de) * 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
JP5878020B2 (ja) * 2009-11-11 2016-03-08 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
JP6088505B2 (ja) * 2012-05-30 2017-03-01 株式会社クラレ 化学機械研磨用スラリーおよび化学機械研磨方法
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
WO2016158648A1 (ja) * 2015-03-30 2016-10-06 Jsr株式会社 化学機械研磨用処理組成物、化学機械研磨方法および洗浄方法
JP6886469B2 (ja) * 2015-12-22 2021-06-16 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ 化学機械研磨後の洗浄組成物
CN108117840B (zh) * 2016-11-29 2021-09-21 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
US10954411B2 (en) * 2019-05-16 2021-03-23 Rohm And Haas Electronic Materials Cmp Holdings Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide
CN120098551A (zh) * 2023-11-29 2025-06-06 安集微电子科技（上海）股份有限公司 一种化学机械抛光组合物

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100583842B1 (ko) * 1998-02-24 2006-05-26 쇼와 덴코 가부시키가이샤 반도체 장치 연마용 연마재 조성물 및 이를 이용한 반도체장치의 제조방법
GB9924502D0 (en) * 1999-10-15 1999-12-15 Biocompatibles Ltd Polymer blend materials
US6641632B1 (en) * 2002-11-18 2003-11-04 International Business Machines Corporation Polishing compositions and use thereof
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US20060083694A1 (en) * 2004-08-07 2006-04-20 Cabot Corporation Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
US20070176141A1 (en) * 2006-01-30 2007-08-02 Lane Sarah J Compositions and methods for chemical mechanical polishing interlevel dielectric layers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110076969A (ko) * 2008-09-26 2011-07-06 로디아 오퍼레이션스 화학적 기계적 폴리싱용 연마제 조성물 및 그의 이용 방법
KR20170054397A (ko) * 2014-09-12 2017-05-17 신에쓰 가가꾸 고교 가부시끼가이샤 연마조성물 및 연마방법

Also Published As

Publication number Publication date
TW200736375A (en) 2007-10-01
US20070210278A1 (en) 2007-09-13
CN101054498A (zh) 2007-10-17
JP2007273973A (ja) 2007-10-18
DE102007008997A1 (de) 2007-09-13
FR2898361A1 (fr) 2007-09-14

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20070302

PG1501 Laying open of application
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WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid