DE102006035627A1 - LED-Halbleiterkörper - Google Patents
LED-Halbleiterkörper Download PDFInfo
- Publication number
- DE102006035627A1 DE102006035627A1 DE102006035627A DE102006035627A DE102006035627A1 DE 102006035627 A1 DE102006035627 A1 DE 102006035627A1 DE 102006035627 A DE102006035627 A DE 102006035627A DE 102006035627 A DE102006035627 A DE 102006035627A DE 102006035627 A1 DE102006035627 A1 DE 102006035627A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- quantum
- semiconductor body
- led semiconductor
- body according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 172
- 230000004888 barrier function Effects 0.000 claims abstract description 79
- 230000005855 radiation Effects 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 10
- 238000001228 spectrum Methods 0.000 claims description 3
- 238000005253 cladding Methods 0.000 description 25
- 239000000463 material Substances 0.000 description 18
- 239000013078 crystal Substances 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 15
- 239000002800 charge carrier Substances 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 230000003595 spectral effect Effects 0.000 description 11
- 229910052738 indium Inorganic materials 0.000 description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 206010051246 Photodermatosis Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008845 photoaging Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006035627A DE102006035627A1 (de) | 2006-07-31 | 2006-07-31 | LED-Halbleiterkörper |
| CNA2007800285790A CN101496187A (zh) | 2006-07-31 | 2007-07-27 | Led半导体本体 |
| KR1020097003151A KR20090033897A (ko) | 2006-07-31 | 2007-07-27 | Ｌｅｄ 반도체 몸체 |
| JP2009522085A JP2009545865A (ja) | 2006-07-31 | 2007-07-27 | Ｌｅｄ半導体基体 |
| PCT/DE2007/001349 WO2008014772A1 (de) | 2006-07-31 | 2007-07-27 | Led-halbleiterkörper |
| EP07817415.8A EP2047527B1 (de) | 2006-07-31 | 2007-07-27 | Led-halbleiterkörper |
| US12/375,528 US8405065B2 (en) | 2006-07-31 | 2007-07-27 | LED semiconductor body |
| TW096127685A TWI370557B (en) | 2006-07-31 | 2007-07-30 | Led semiconductor body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006035627A DE102006035627A1 (de) | 2006-07-31 | 2006-07-31 | LED-Halbleiterkörper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102006035627A1 true DE102006035627A1 (de) | 2008-02-07 |
Family
ID=38739481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102006035627A Withdrawn DE102006035627A1 (de) | 2006-07-31 | 2006-07-31 | LED-Halbleiterkörper |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8405065B2 (https=) |
| EP (1) | EP2047527B1 (https=) |
| JP (1) | JP2009545865A (https=) |
| KR (1) | KR20090033897A (https=) |
| CN (1) | CN101496187A (https=) |
| DE (1) | DE102006035627A1 (https=) |
| TW (1) | TWI370557B (https=) |
| WO (1) | WO2008014772A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010091135A1 (en) | 2009-02-05 | 2010-08-12 | Arkema Inc. | Fibers sized with polyetherketoneketones |
| JP5684501B2 (ja) * | 2010-07-06 | 2015-03-11 | 昭和電工株式会社 | 発光ダイオード用エピタキシャルウェーハ |
| JP5801542B2 (ja) | 2010-07-13 | 2015-10-28 | 昭和電工株式会社 | 発光ダイオード及び発光ダイオードランプ |
| JP5228122B1 (ja) | 2012-03-08 | 2013-07-03 | 株式会社東芝 | 窒化物半導体素子及び窒化物半導体ウェーハ |
| JP6024278B2 (ja) * | 2012-08-10 | 2016-11-16 | 住友電気工業株式会社 | 発光素子 |
| DE102012107795B4 (de) * | 2012-08-23 | 2022-02-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip |
| US9508891B2 (en) * | 2014-11-21 | 2016-11-29 | Epistar Corporation | Method for making light-emitting device |
| US9306115B1 (en) * | 2015-02-10 | 2016-04-05 | Epistar Corporation | Light-emitting device |
| DE102015109796A1 (de) * | 2015-06-18 | 2016-12-22 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
| DE102015109793A1 (de) * | 2015-06-18 | 2016-12-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
| DE102015119817A1 (de) | 2015-11-17 | 2017-05-18 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement |
| US9859470B2 (en) * | 2016-03-10 | 2018-01-02 | Epistar Corporation | Light-emitting device with adjusting element |
| DE102019115351A1 (de) * | 2019-06-06 | 2020-12-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen |
| KR102333489B1 (ko) * | 2019-10-01 | 2021-12-01 | 에피스타 코포레이션 | 발광 디바이스 |
| CN112838150B (zh) * | 2020-12-31 | 2022-05-13 | 武汉光迅科技股份有限公司 | 发光二极管及其形成方法 |
| US12278304B2 (en) * | 2021-02-04 | 2025-04-15 | Mellanox Technologies, Ltd. | High modulation speed PIN-type photodiode |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0700138A1 (en) * | 1994-08-29 | 1996-03-06 | Matsushita Electric Industrial Co., Ltd. | Strained quantum well semiconducteur laser device and method for fabricating the same |
| US5521935A (en) * | 1993-12-27 | 1996-05-28 | The Furukawa Electric Co., Ltd. | Strained superlattice light emitting device |
| EP0727821A2 (en) * | 1989-05-31 | 1996-08-21 | Hitachi, Ltd. | Semiconductor optical device |
| EP0731511A2 (en) * | 1992-01-17 | 1996-09-11 | Nortel Networks Corporation | Semiconductor mixed crystal quantum well device manufacture |
| US6657233B2 (en) * | 1998-08-19 | 2003-12-02 | Ricoh Company, Ltd. | Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device |
| US20030235224A1 (en) * | 2002-06-19 | 2003-12-25 | Ohlander Ulf Roald | Strained quantum-well structure having ternary-alloy material in both quantum-well layers and barrier layers |
| DE102004026125A1 (de) * | 2004-05-28 | 2005-12-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Verfahren zu dessen Herstellung |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09162482A (ja) * | 1995-12-08 | 1997-06-20 | Nippon Telegr & Teleph Corp <Ntt> | 面発光半導体レーザ |
| US6233264B1 (en) * | 1996-08-27 | 2001-05-15 | Ricoh Company, Ltd. | Optical semiconductor device having an active layer containing N |
| US5825796A (en) * | 1996-09-25 | 1998-10-20 | Picolight Incorporated | Extended wavelength strained layer lasers having strain compensated layers |
| JPH11150330A (ja) * | 1997-11-14 | 1999-06-02 | Sony Corp | 半導体発光素子 |
| JPH11274635A (ja) * | 1998-03-19 | 1999-10-08 | Hitachi Ltd | 半導体発光装置 |
| US6711195B2 (en) * | 2002-02-28 | 2004-03-23 | Agilent Technologies, Inc. | Long-wavelength photonic device with GaAsSb quantum-well layer |
| US7801194B2 (en) * | 2002-07-01 | 2010-09-21 | Sharp Kabushiki Kaisha | Semiconductor laser device and optical disk unit using the same |
| TWI226138B (en) * | 2003-01-03 | 2005-01-01 | Super Nova Optoelectronics Cor | GaN-based LED vertical device structure and the manufacturing method thereof |
| JP2004235649A (ja) * | 2003-01-31 | 2004-08-19 | Osram Opto Semiconductors Gmbh | 電気コンタクト領域を備えたモジュールの製造方法および半導体層列および活性ゾーンを有するモジュール |
| JP2004296634A (ja) * | 2003-03-26 | 2004-10-21 | Sharp Corp | 半導体レーザ装置および光ディスク装置 |
| JP2004296637A (ja) * | 2003-03-26 | 2004-10-21 | Sharp Corp | 半導体レーザ装置および光ディスク装置 |
| DE102004024611A1 (de) * | 2003-05-23 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Optisch gepumpte Halbleitervorrichtung |
| JP2005109124A (ja) * | 2003-09-30 | 2005-04-21 | Shin Etsu Handotai Co Ltd | 発光素子及びその製造方法 |
| JP4164689B2 (ja) | 2003-11-21 | 2008-10-15 | サンケン電気株式会社 | 半導体発光素子 |
| TW200520266A (en) * | 2003-11-21 | 2005-06-16 | Sanken Electric Co Ltd | Semiconductor luminous element and manufacturing method of the same |
| DE102005016592A1 (de) | 2004-04-14 | 2005-11-24 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
| TWI254469B (en) | 2004-04-14 | 2006-05-01 | Osram Opto Semiconductors Gmbh | Luminous diode chip |
| EP1780849B1 (en) * | 2004-06-11 | 2013-01-30 | Ricoh Company, Ltd. | Surface emitting laser diode and its manufacturing method |
| JP4224041B2 (ja) * | 2004-08-26 | 2009-02-12 | シャープ株式会社 | 半導体レーザ素子、半導体レーザ素子の製造方法、光ディスク装置および光伝送システム |
| JP2006120884A (ja) * | 2004-10-22 | 2006-05-11 | Ricoh Co Ltd | 半導体発光素子および面発光レーザおよび面発光レーザアレイおよび画像形成装置および光ピックアップシステムおよび光送信モジュールおよび光送受信モジュールおよび光通信システム |
| DE102004057802B4 (de) * | 2004-11-30 | 2011-03-24 | Osram Opto Semiconductors Gmbh | Strahlungemittierendes Halbleiterbauelement mit Zwischenschicht |
| US7459719B2 (en) * | 2004-12-17 | 2008-12-02 | Panasonic Corporation | Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer |
| JP2006196880A (ja) * | 2004-12-17 | 2006-07-27 | Matsushita Electric Ind Co Ltd | 光半導体装置及びその製造方法 |
| JP4460473B2 (ja) * | 2005-02-23 | 2010-05-12 | シャープ株式会社 | 半導体レーザ装置の製造方法 |
| US7376169B2 (en) * | 2005-03-07 | 2008-05-20 | Joseph Reid Henrichs | Optical phase conjugation laser diode |
| JP2007012688A (ja) * | 2005-06-28 | 2007-01-18 | Toshiba Corp | 半導体発光素子 |
| DE102006039369A1 (de) * | 2005-12-30 | 2007-07-05 | Osram Opto Semiconductors Gmbh | LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers |
| DE102006028692B4 (de) * | 2006-05-19 | 2021-09-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium |
| US8115213B2 (en) * | 2007-02-08 | 2012-02-14 | Phoseon Technology, Inc. | Semiconductor light sources, systems, and methods |
| US20080197369A1 (en) * | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
| US20090238227A1 (en) * | 2008-03-05 | 2009-09-24 | Rohm Co., Ltd. | Semiconductor light emitting device |
| JP5102082B2 (ja) * | 2008-03-18 | 2012-12-19 | 株式会社リコー | 画像形成装置 |
-
2006
- 2006-07-31 DE DE102006035627A patent/DE102006035627A1/de not_active Withdrawn
-
2007
- 2007-07-27 EP EP07817415.8A patent/EP2047527B1/de active Active
- 2007-07-27 KR KR1020097003151A patent/KR20090033897A/ko not_active Withdrawn
- 2007-07-27 CN CNA2007800285790A patent/CN101496187A/zh active Pending
- 2007-07-27 WO PCT/DE2007/001349 patent/WO2008014772A1/de not_active Ceased
- 2007-07-27 JP JP2009522085A patent/JP2009545865A/ja active Pending
- 2007-07-27 US US12/375,528 patent/US8405065B2/en active Active
- 2007-07-30 TW TW096127685A patent/TWI370557B/zh active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0727821A2 (en) * | 1989-05-31 | 1996-08-21 | Hitachi, Ltd. | Semiconductor optical device |
| EP0731511A2 (en) * | 1992-01-17 | 1996-09-11 | Nortel Networks Corporation | Semiconductor mixed crystal quantum well device manufacture |
| US5521935A (en) * | 1993-12-27 | 1996-05-28 | The Furukawa Electric Co., Ltd. | Strained superlattice light emitting device |
| EP0700138A1 (en) * | 1994-08-29 | 1996-03-06 | Matsushita Electric Industrial Co., Ltd. | Strained quantum well semiconducteur laser device and method for fabricating the same |
| US6657233B2 (en) * | 1998-08-19 | 2003-12-02 | Ricoh Company, Ltd. | Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device |
| US20030235224A1 (en) * | 2002-06-19 | 2003-12-25 | Ohlander Ulf Roald | Strained quantum-well structure having ternary-alloy material in both quantum-well layers and barrier layers |
| DE102004026125A1 (de) * | 2004-05-28 | 2005-12-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Verfahren zu dessen Herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI370557B (en) | 2012-08-11 |
| EP2047527B1 (de) | 2017-11-22 |
| CN101496187A (zh) | 2009-07-29 |
| US8405065B2 (en) | 2013-03-26 |
| WO2008014772A1 (de) | 2008-02-07 |
| EP2047527A1 (de) | 2009-04-15 |
| JP2009545865A (ja) | 2009-12-24 |
| US20090302307A1 (en) | 2009-12-10 |
| TW200810159A (en) | 2008-02-16 |
| KR20090033897A (ko) | 2009-04-06 |
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