DE102005004878B4 - Mikromechanischer kapazitiver Drucksensor und entsprechendes Herstellungsverfahren - Google Patents

Mikromechanischer kapazitiver Drucksensor und entsprechendes Herstellungsverfahren Download PDF

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Publication number
DE102005004878B4
DE102005004878B4 DE102005004878.1A DE102005004878A DE102005004878B4 DE 102005004878 B4 DE102005004878 B4 DE 102005004878B4 DE 102005004878 A DE102005004878 A DE 102005004878A DE 102005004878 B4 DE102005004878 B4 DE 102005004878B4
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DE
Germany
Prior art keywords
membrane
substrate
pressure sensor
region
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE102005004878.1A
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German (de)
English (en)
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DE102005004878A1 (de
Inventor
Franz Laermer
Silvia Kronmüller
Christina Leinenbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE102005004878.1A priority Critical patent/DE102005004878B4/de
Priority to US11/343,613 priority patent/US7262071B2/en
Priority to FR0650366A priority patent/FR2882996B1/fr
Priority to JP2006026589A priority patent/JP5032030B2/ja
Publication of DE102005004878A1 publication Critical patent/DE102005004878A1/de
Application granted granted Critical
Publication of DE102005004878B4 publication Critical patent/DE102005004878B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
DE102005004878.1A 2005-02-03 2005-02-03 Mikromechanischer kapazitiver Drucksensor und entsprechendes Herstellungsverfahren Expired - Lifetime DE102005004878B4 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102005004878.1A DE102005004878B4 (de) 2005-02-03 2005-02-03 Mikromechanischer kapazitiver Drucksensor und entsprechendes Herstellungsverfahren
US11/343,613 US7262071B2 (en) 2005-02-03 2006-01-30 Micromechanical component and suitable method for its manufacture
FR0650366A FR2882996B1 (fr) 2005-02-03 2006-02-02 Composant micromecanique et son procede de fabrication
JP2006026589A JP5032030B2 (ja) 2005-02-03 2006-02-03 マイクロマシニング型の構成素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005004878.1A DE102005004878B4 (de) 2005-02-03 2005-02-03 Mikromechanischer kapazitiver Drucksensor und entsprechendes Herstellungsverfahren

Publications (2)

Publication Number Publication Date
DE102005004878A1 DE102005004878A1 (de) 2006-08-10
DE102005004878B4 true DE102005004878B4 (de) 2015-01-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102005004878.1A Expired - Lifetime DE102005004878B4 (de) 2005-02-03 2005-02-03 Mikromechanischer kapazitiver Drucksensor und entsprechendes Herstellungsverfahren

Country Status (4)

Country Link
US (1) US7262071B2 (https=)
JP (1) JP5032030B2 (https=)
DE (1) DE102005004878B4 (https=)
FR (1) FR2882996B1 (https=)

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US7880247B2 (en) * 2003-12-29 2011-02-01 Vladimir Vaganov Semiconductor input control device
US7554167B2 (en) * 2003-12-29 2009-06-30 Vladimir Vaganov Three-dimensional analog input control device
US7772657B2 (en) * 2004-12-28 2010-08-10 Vladimir Vaganov Three-dimensional force input control device and fabrication
US8350345B2 (en) 2003-12-29 2013-01-08 Vladimir Vaganov Three-dimensional input control device
DE102005047081B4 (de) * 2005-09-30 2019-01-31 Robert Bosch Gmbh Verfahren zum plasmalosen Ätzen von Silizium mit dem Ätzgas ClF3 oder XeF2
EP2020025A4 (en) * 2006-05-22 2011-08-24 Vladimir Vaganov SEMICONDUCTOR ENTER CONTROL DEVICE
US7791151B2 (en) * 2006-05-24 2010-09-07 Vladimir Vaganov Force input control device and method of fabrication
DE102006024668A1 (de) * 2006-05-26 2007-11-29 Robert Bosch Gmbh Mikromechanisches Bauelement und Verfahren zu dessen Herstellung
JP5492571B2 (ja) * 2007-02-20 2014-05-14 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド Ｍｅｍｓのエッチングを行うための機器および方法
WO2008124372A2 (en) * 2007-04-04 2008-10-16 Qualcomm Mems Technologies, Inc. Eliminate release etch attack by interface modification in sacrificial layers
DE102007029414A1 (de) 2007-06-26 2009-01-08 Robert Bosch Gmbh Kapazitiver Drucksensor
JP2011501874A (ja) * 2007-09-14 2011-01-13 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド Ｍｅｍｓ製造において使用されるエッチングプロセス
DE102007046017B4 (de) * 2007-09-26 2021-07-01 Robert Bosch Gmbh Sensorelement
US8258591B2 (en) * 2008-01-16 2012-09-04 Solid State System Co., Ltd. Micro-electro-mechanical systems (MEMS) device
JP5473253B2 (ja) * 2008-06-02 2014-04-16 キヤノン株式会社 複数の導電性領域を有する構造体、及びその製造方法
DE102009000071A1 (de) 2009-01-08 2010-07-15 Robert Bosch Gmbh Kapazitiver Drucksensor
WO2010122953A1 (ja) * 2009-04-24 2010-10-28 株式会社村田製作所 Ｍｅｍｓ素子およびその製造方法
DE102010003488A1 (de) * 2010-03-30 2011-10-06 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Verkapselung eines BiCMOS kompatiblen RFMEMS Schalters
KR101215919B1 (ko) * 2010-08-13 2012-12-27 전자부품연구원 정전용량형 압력센서 및 그의 제조방법
JP5778914B2 (ja) * 2010-11-04 2015-09-16 キヤノン株式会社 電気機械変換装置の製造方法
CN102539055B (zh) * 2012-02-13 2014-04-09 苏州文智芯微系统技术有限公司 基于智能剥离硅隔离芯片的耐高温抗腐蚀压力传感器
US8748999B2 (en) * 2012-04-20 2014-06-10 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitive sensors and methods for forming the same
FR2999948B1 (fr) 2012-12-20 2016-04-29 Aerogroupe Plateforme mobile dans une structure cylindrique
US8900975B2 (en) 2013-01-03 2014-12-02 International Business Machines Corporation Nanopore sensor device
US9216897B2 (en) * 2013-06-05 2015-12-22 Invensense, Inc. Capacitive sensing structure with embedded acoustic channels
US20170005176A1 (en) * 2013-12-27 2017-01-05 Intel Corporation Selective etching for gate all around architectures
US9630837B1 (en) * 2016-01-15 2017-04-25 Taiwan Semiconductor Manufacturing Company Ltd. MEMS structure and manufacturing method thereof
US10554153B2 (en) * 2016-06-17 2020-02-04 Globalfoundries Singapore Pte. Ltd. MEMS device for harvesting sound energy and methods for fabricating same
JP6812880B2 (ja) * 2017-03-29 2021-01-13 東京エレクトロン株式会社 基板処理方法及び記憶媒体。
JP2020151796A (ja) * 2019-03-19 2020-09-24 株式会社リコー 振動素子基板の製造方法及び振動素子基板
US11791155B2 (en) * 2020-08-27 2023-10-17 Applied Materials, Inc. Diffusion barriers for germanium

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US6229190B1 (en) * 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
US6355498B1 (en) * 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing
DE10122765A1 (de) * 2001-05-10 2002-12-05 Campus Micro Technologies Gmbh Elektroakustischer Wandler zur Erzeugung oder Erfassung von Ultraschall, Wandler-Array und Verfahren zur Herstellung der Wandler bzw. der Wandler-Arrays
US20030129785A1 (en) * 2002-01-10 2003-07-10 Barber Bradley Paul Structurally supported thin film resonator and method of fabrication
DE10239306A1 (de) * 2002-08-27 2004-03-18 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Verfahren zum selektiven Verbinden von Substraten
US20040127008A1 (en) * 2002-07-04 2004-07-01 Wilhelm Frey Method for producing integrated microsystems

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JPH05231970A (ja) * 1992-02-25 1993-09-07 Matsushita Electric Works Ltd 薄膜体ブリッジ構造
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
JPH06347353A (ja) * 1993-06-11 1994-12-22 Fujikura Ltd 半導体圧力センサ
US7460291B2 (en) * 1994-05-05 2008-12-02 Idc, Llc Separable modulator
JP2001522072A (ja) * 1997-10-31 2001-11-13 テーウー エレクトロニクス カンパニー リミテッド 薄膜型光路調節装置の製造方法
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JP3362714B2 (ja) * 1998-11-16 2003-01-07 株式会社豊田中央研究所 静電容量型圧力センサおよびその製造方法
AU3346000A (en) * 1999-01-15 2000-08-01 Regents Of The University Of California, The Polycrystalline silicon germanium films for forming micro-electromechanical systems
DE10024266B4 (de) * 2000-05-17 2010-06-17 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelements
DE10047500B4 (de) * 2000-09-26 2009-11-26 Robert Bosch Gmbh Mikromechanische Membran und Verfahren zu ihrer Herstellung

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6229190B1 (en) * 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
US6355498B1 (en) * 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing
DE10122765A1 (de) * 2001-05-10 2002-12-05 Campus Micro Technologies Gmbh Elektroakustischer Wandler zur Erzeugung oder Erfassung von Ultraschall, Wandler-Array und Verfahren zur Herstellung der Wandler bzw. der Wandler-Arrays
US20030129785A1 (en) * 2002-01-10 2003-07-10 Barber Bradley Paul Structurally supported thin film resonator and method of fabrication
US20040127008A1 (en) * 2002-07-04 2004-07-01 Wilhelm Frey Method for producing integrated microsystems
DE10239306A1 (de) * 2002-08-27 2004-03-18 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Verfahren zum selektiven Verbinden von Substraten

Also Published As

Publication number Publication date
JP5032030B2 (ja) 2012-09-26
FR2882996A1 (fr) 2006-09-15
US20060170012A1 (en) 2006-08-03
DE102005004878A1 (de) 2006-08-10
FR2882996B1 (fr) 2015-12-25
US7262071B2 (en) 2007-08-28
JP2006212773A (ja) 2006-08-17

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