DE102004041178A1 - Akustischer Filmresonator und Herstellungsverfahren hierfür - Google Patents

Akustischer Filmresonator und Herstellungsverfahren hierfür Download PDF

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Publication number
DE102004041178A1
DE102004041178A1 DE200410041178 DE102004041178A DE102004041178A1 DE 102004041178 A1 DE102004041178 A1 DE 102004041178A1 DE 200410041178 DE200410041178 DE 200410041178 DE 102004041178 A DE102004041178 A DE 102004041178A DE 102004041178 A1 DE102004041178 A1 DE 102004041178A1
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DE
Germany
Prior art keywords
film resonator
manufacturing
method therefor
acoustic film
piezoelectric thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
DE200410041178
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English (en)
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DE102004041178B4 (de
DE102004041178B8 (de
Inventor
Tsuyoshi Yokoyama
Takeshi Sakashita
Tokihiro Nishihara
Tsutomo Miyashita
Yoshio Satoh
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Taiyo Yuden Co Ltd
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Fujitsu Ltd
Fujitsu Media Devices Ltd
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Publication of DE102004041178A1 publication Critical patent/DE102004041178A1/de
Publication of DE102004041178B4 publication Critical patent/DE102004041178B4/de
Application granted granted Critical
Publication of DE102004041178B8 publication Critical patent/DE102004041178B8/de
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/562—Monolithic crystal filters comprising a ceramic piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

Der offenbarte akustische Filmresonator umfasst Folgendes: einen piezoelektrischen Dünnfilm, der auf einer Hauptoberfläche eines Substrats ausgebildet ist, und eine untere Elektrode und eine obere Elektrode, welche so angeordnet sind, dass der piezoelektrische Dünnfilm zwischen sie geschichtet ist. Bei diesem akustischen Filmresonator ist der piezoelektrische Dünnfilm aus Aluminiumnitrid hergestellt, und die untere Elektrode und/oder die obere Elektrode enthält eine Ruthenium- oder Rutheniumlegierungsschicht.
DE200410041178 2003-08-27 2004-08-25 Akustischer Filmresonator und Verfahren zu dessen Herstellung Active DE102004041178B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-303707 2003-08-27
JP2003303707A JP2005073175A (ja) 2003-08-27 2003-08-27 圧電薄膜共振子及びその製造方法

Publications (3)

Publication Number Publication Date
DE102004041178A1 true DE102004041178A1 (de) 2005-05-04
DE102004041178B4 DE102004041178B4 (de) 2013-08-14
DE102004041178B8 DE102004041178B8 (de) 2014-01-23

Family

ID=34214006

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200410041178 Active DE102004041178B8 (de) 2003-08-27 2004-08-25 Akustischer Filmresonator und Verfahren zu dessen Herstellung

Country Status (5)

Country Link
US (1) US7323953B2 (de)
JP (1) JP2005073175A (de)
KR (1) KR20050021309A (de)
CN (1) CN100594674C (de)
DE (1) DE102004041178B8 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112008002181B4 (de) 2007-08-14 2023-08-03 Avago Technologies International Sales Pte. Limited Bulkakustikwellenstruktur mit einer piezoelektrischen Aluminiumkupfernitrid-Schicht und darauf bezogenes Verfahren

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KR101856057B1 (ko) 2011-12-08 2018-05-10 삼성전자주식회사 체적 음향 공진기, 체적 음향 공진기의 제조방법 및 체적 음향 공진기를 이용한 ｒｆ 디바이스
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CN107527993B (zh) * 2016-06-20 2020-05-26 上海磁宇信息科技有限公司 一种磁性隧道结接触电极及其形成方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112008002181B4 (de) 2007-08-14 2023-08-03 Avago Technologies International Sales Pte. Limited Bulkakustikwellenstruktur mit einer piezoelektrischen Aluminiumkupfernitrid-Schicht und darauf bezogenes Verfahren

Also Published As

Publication number Publication date
DE102004041178B4 (de) 2013-08-14
KR20050021309A (ko) 2005-03-07
DE102004041178B8 (de) 2014-01-23
US7323953B2 (en) 2008-01-29
US20050046519A1 (en) 2005-03-03
JP2005073175A (ja) 2005-03-17
CN1592100A (zh) 2005-03-09
CN100594674C (zh) 2010-03-17

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