DE102004041178B8 - Akustischer Filmresonator und Verfahren zu dessen Herstellung - Google Patents

Akustischer Filmresonator und Verfahren zu dessen Herstellung Download PDF

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Publication number
DE102004041178B8
DE102004041178B8 DE200410041178 DE102004041178A DE102004041178B8 DE 102004041178 B8 DE102004041178 B8 DE 102004041178B8 DE 200410041178 DE200410041178 DE 200410041178 DE 102004041178 A DE102004041178 A DE 102004041178A DE 102004041178 B8 DE102004041178 B8 DE 102004041178B8
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DE
Germany
Prior art keywords
production
film resonator
acoustic film
acoustic
resonator
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Application number
DE200410041178
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English (en)
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DE102004041178A1 (de
DE102004041178B4 (de
Inventor
Tsuyoshi Yokoyama
Takeshi Sakashita
Tokihiro Nishihara
Yoshio Satoh
Tsutomu Miyashita
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Taiyo Yuden Co Ltd
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Taiyo Yuden Co Ltd
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Publication of DE102004041178A1 publication Critical patent/DE102004041178A1/de
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Publication of DE102004041178B4 publication Critical patent/DE102004041178B4/de
Publication of DE102004041178B8 publication Critical patent/DE102004041178B8/de
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/562—Monolithic crystal filters comprising a ceramic piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
DE200410041178 2003-08-27 2004-08-25 Akustischer Filmresonator und Verfahren zu dessen Herstellung Active DE102004041178B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-303707 2003-08-27
JP2003303707A JP2005073175A (ja) 2003-08-27 2003-08-27 圧電薄膜共振子及びその製造方法

Publications (3)

Publication Number Publication Date
DE102004041178A1 DE102004041178A1 (de) 2005-05-04
DE102004041178B4 DE102004041178B4 (de) 2013-08-14
DE102004041178B8 true DE102004041178B8 (de) 2014-01-23

Family

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Family Applications (1)

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DE200410041178 Active DE102004041178B8 (de) 2003-08-27 2004-08-25 Akustischer Filmresonator und Verfahren zu dessen Herstellung

Country Status (5)

Country Link
US (1) US7323953B2 (de)
JP (1) JP2005073175A (de)
KR (1) KR20050021309A (de)
CN (1) CN100594674C (de)
DE (1) DE102004041178B8 (de)

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JP4548171B2 (ja) * 2005-03-24 2010-09-22 ソニー株式会社 圧電共振素子およびその製造方法
JP4629492B2 (ja) * 2005-05-10 2011-02-09 太陽誘電株式会社 圧電薄膜共振子およびフィルタ
JP2007048816A (ja) * 2005-08-08 2007-02-22 Seiko Epson Corp アクチュエータ装置の製造方法及びアクチュエータ装置並びに液体噴射ヘッド及び液体噴射装置
JP4756461B2 (ja) 2005-10-12 2011-08-24 宇部興産株式会社 窒化アルミニウム薄膜およびそれを用いた圧電薄膜共振子
JP4252584B2 (ja) 2006-04-28 2009-04-08 富士通メディアデバイス株式会社 圧電薄膜共振器およびフィルタ
WO2008016075A1 (fr) * 2006-08-03 2008-02-07 Panasonic Corporation Résonateur à films acoustiques variable en fréquence, filtre et appareil de communication utilisant celui-ci
JP2008054258A (ja) * 2006-08-28 2008-03-06 Kanagawa Acad Of Sci & Technol 半導体素子、フィルタ素子、通信機器及び半導体素子の製造方法
JP4968900B2 (ja) * 2006-10-17 2012-07-04 太陽誘電株式会社 ラダー型フィルタの製造方法
US8833174B2 (en) * 2007-04-12 2014-09-16 Colorado School Of Mines Piezoelectric sensor based smart-die structure for predicting the onset of failure during die casting operations
US7405625B1 (en) * 2007-04-25 2008-07-29 Analog Devices, Inc. Common-mode control structures and signal converter systems for use therewith
JP5009369B2 (ja) * 2007-07-13 2012-08-22 太陽誘電株式会社 圧電薄膜共振素子及びこれを用いた回路部品
WO2009011022A1 (ja) 2007-07-13 2009-01-22 Fujitsu Limited 圧電薄膜共振素子及びこれを用いた回路部品
US8035277B2 (en) * 2007-08-14 2011-10-11 Avago Technologies Wireless Ip (Singapore) Pte.Ltd. Method for forming a multi-layer electrode underlying a piezoelectric layer and related structure
WO2009023098A2 (en) 2007-08-14 2009-02-19 Skyworks Solutions, Inc. Bulk acoustic wave structure with aluminum copper nitride piezoelectric layer and related method
JP2008079328A (ja) * 2007-10-12 2008-04-03 Fujitsu Media Device Kk 圧電薄膜共振子及びその製造方法
CN101960717B (zh) * 2008-03-04 2014-04-23 太阳诱电株式会社 压电薄膜谐振器、滤波器、通信模块及通信装置
US7602102B1 (en) * 2008-04-24 2009-10-13 Skyworks Solutions, Inc. Bulk acoustic wave resonator with controlled thickness region having controlled electromechanical coupling
US7795781B2 (en) * 2008-04-24 2010-09-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator with reduced energy loss
JP5286016B2 (ja) * 2008-10-03 2013-09-11 京セラ株式会社 フィルタおよびデュプレクサ、ならびにフィルタの製造方法
US8390397B2 (en) * 2010-03-29 2013-03-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator structure comprising hybrid electrodes
US9608589B2 (en) 2010-10-26 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of forming acoustic resonator using intervening seed layer
KR101856057B1 (ko) * 2011-12-08 2018-05-10 삼성전자주식회사 체적 음향 공진기, 체적 음향 공진기의 제조방법 및 체적 음향 공진기를 이용한 ｒｆ 디바이스
US9065421B2 (en) 2012-01-31 2015-06-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator with multi-layers of different piezoelectric materials and method of making
KR102176280B1 (ko) 2015-12-18 2020-11-09 삼성전기주식회사 음향 공진기 및 그 제조 방법
CN107527993B (zh) * 2016-06-20 2020-05-26 上海磁宇信息科技有限公司 一种磁性隧道结接触电极及其形成方法
KR102395994B1 (ko) * 2017-12-27 2022-05-11 삼성전자주식회사 지향성 마이크로폰
JP7298991B2 (ja) * 2018-01-22 2023-06-27 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ
CN110957989B (zh) 2018-09-26 2024-01-26 中国科学院苏州纳米技术与纳米仿生研究所 薄膜体声波谐振器及其制作方法
CN111384920A (zh) * 2018-12-29 2020-07-07 中芯集成电路（宁波）有限公司上海分公司 晶体谐振器与控制电路的集成结构及其集成方法

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JPH06204776A (ja) * 1992-12-28 1994-07-22 Oki Electric Ind Co Ltd 圧電薄膜振動子の製造方法
US5587620A (en) * 1993-12-21 1996-12-24 Hewlett-Packard Company Tunable thin film acoustic resonators and method for making the same
JP2000069594A (ja) * 1998-06-02 2000-03-03 Hewlett Packard Co <Hp> 音響共振器とその製作方法
US6271619B1 (en) * 1997-05-13 2001-08-07 Mitsubishi Denki Kabushiki Kaisha Piezoelectric thin film device
US20030132683A1 (en) * 2002-01-08 2003-07-17 Murata Manufacturing Co., Ltd. Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator

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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204776A (ja) * 1992-12-28 1994-07-22 Oki Electric Ind Co Ltd 圧電薄膜振動子の製造方法
US5587620A (en) * 1993-12-21 1996-12-24 Hewlett-Packard Company Tunable thin film acoustic resonators and method for making the same
US6271619B1 (en) * 1997-05-13 2001-08-07 Mitsubishi Denki Kabushiki Kaisha Piezoelectric thin film device
JP2000069594A (ja) * 1998-06-02 2000-03-03 Hewlett Packard Co <Hp> 音響共振器とその製作方法
US20030132683A1 (en) * 2002-01-08 2003-07-17 Murata Manufacturing Co., Ltd. Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator

Also Published As

Publication number Publication date
US20050046519A1 (en) 2005-03-03
DE102004041178A1 (de) 2005-05-04
KR20050021309A (ko) 2005-03-07
JP2005073175A (ja) 2005-03-17
CN1592100A (zh) 2005-03-09
DE102004041178B4 (de) 2013-08-14
US7323953B2 (en) 2008-01-29
CN100594674C (zh) 2010-03-17

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