DE10196362T1 - Leistungsdiode mit weichem Ausschaltverhalten (Soft Recovery) und darauf bezogenes Verfahren - Google Patents

Leistungsdiode mit weichem Ausschaltverhalten (Soft Recovery) und darauf bezogenes Verfahren

Info

Publication number
DE10196362T1
DE10196362T1 DE10196362T DE10196362T DE10196362T1 DE 10196362 T1 DE10196362 T1 DE 10196362T1 DE 10196362 T DE10196362 T DE 10196362T DE 10196362 T DE10196362 T DE 10196362T DE 10196362 T1 DE10196362 T1 DE 10196362T1
Authority
DE
Germany
Prior art keywords
soft
behavior
related process
power diode
recovery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10196362T
Other languages
English (en)
Other versions
DE10196362B4 (de
Inventor
Praveen Muraleedharan Shenoy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of DE10196362T1 publication Critical patent/DE10196362T1/de
Application granted granted Critical
Publication of DE10196362B4 publication Critical patent/DE10196362B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/927—Different doping levels in different parts of PN junction to produce shaped depletion layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE10196362T 2000-06-26 2001-06-22 Leistungsdiode mit weichem Ausschaltverhalten (Soft Recovery) und darauf bezogenes Verfahren Expired - Lifetime DE10196362B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/603,605 US6737731B1 (en) 2000-06-26 2000-06-26 Soft recovery power diode
US09/603,605 2000-06-26
PCT/US2001/019990 WO2002001643A2 (en) 2000-06-26 2001-06-22 Soft recovery power diode and related method

Publications (2)

Publication Number Publication Date
DE10196362T1 true DE10196362T1 (de) 2003-05-22
DE10196362B4 DE10196362B4 (de) 2007-04-05

Family

ID=24416158

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10196362T Expired - Lifetime DE10196362B4 (de) 2000-06-26 2001-06-22 Leistungsdiode mit weichem Ausschaltverhalten (Soft Recovery) und darauf bezogenes Verfahren

Country Status (7)

Country Link
US (1) US6737731B1 (de)
JP (1) JP4608181B2 (de)
CN (1) CN1211865C (de)
AU (1) AU2001270086A1 (de)
DE (1) DE10196362B4 (de)
TW (1) TW507384B (de)
WO (1) WO2002001643A2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7169634B2 (en) * 2003-01-15 2007-01-30 Advanced Power Technology, Inc. Design and fabrication of rugged FRED
US7199442B2 (en) * 2004-07-15 2007-04-03 Fairchild Semiconductor Corporation Schottky diode structure to reduce capacitance and switching losses and method of making same
DE102004048607A1 (de) 2004-10-06 2006-04-13 Robert Bosch Gmbh Halbleiterbauelement
JP4843253B2 (ja) * 2005-05-23 2011-12-21 株式会社東芝 電力用半導体装置
US7728409B2 (en) * 2005-11-10 2010-06-01 Fuji Electric Device Technology Co., Ltd. Semiconductor device and method of manufacturing the same
JP2009049045A (ja) * 2007-08-13 2009-03-05 Kansai Electric Power Co Inc:The ソフトリカバリーダイオード
JP5309360B2 (ja) * 2008-07-31 2013-10-09 三菱電機株式会社 半導体装置およびその製造方法
US8933506B2 (en) * 2011-01-31 2015-01-13 Alpha And Omega Semiconductor Incorporated Diode structures with controlled injection efficiency for fast switching
CN102832121B (zh) * 2011-06-17 2015-04-01 中国科学院微电子研究所 快恢复二极管制造方法
CN103311314B (zh) * 2012-03-11 2016-08-03 深圳市立德电控科技有限公司 快恢复二极管及制作该二极管的方法
CN103311278B (zh) * 2012-03-11 2016-03-02 深圳市依思普林科技有限公司 快恢复二极管及制作该二极管的方法
CN102820323B (zh) * 2012-09-07 2014-11-05 温州大学 纳米碳化硅/晶体碳化硅双缓变结快速恢复二极管及其制备方法
CN107922202A (zh) * 2015-09-01 2018-04-17 日立化成株式会社 气凝胶
JP6846119B2 (ja) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス ダイオード、およびそれを用いた電力変換装置
CN107623045A (zh) * 2017-09-30 2018-01-23 绍兴上虞欧菲光电科技有限公司 一种二极管
CN108598153B (zh) * 2018-06-29 2023-12-29 南京晟芯半导体有限公司 软恢复功率半导体二极管及其制备方法
CN111653611A (zh) * 2020-07-20 2020-09-11 电子科技大学 一种改善半导体器件反向恢复特性的方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1547287A (fr) * 1966-12-19 1968-11-22 Lucas Industries Ltd Diode semiconductrice
FR2395605A1 (fr) 1977-06-21 1979-01-19 Thomson Csf Structure de diode a avalanche a rendement ameliore et diode utilisant une telle structure
JPS5929469A (ja) 1982-08-11 1984-02-16 Hitachi Ltd 半導体装置
JPS59189679A (ja) 1983-04-13 1984-10-27 Hitachi Ltd ダイオ−ド
JPS6453582A (en) * 1987-08-25 1989-03-01 Toko Inc Variable capacitance diode device
FR2638892B1 (fr) 1988-11-09 1992-12-24 Sgs Thomson Microelectronics Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
DE4201183A1 (de) 1992-01-17 1993-07-22 Eupec Gmbh & Co Kg Leistungsdiode
JP2509127B2 (ja) * 1992-03-04 1996-06-19 財団法人半導体研究振興会 静電誘導デバイス
US5608244A (en) 1992-04-28 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor diode with reduced recovery current
JPH06314801A (ja) 1993-03-05 1994-11-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2854212B2 (ja) * 1993-03-12 1999-02-03 ローム株式会社 サージ吸収用ダイオード
JP3994443B2 (ja) 1995-05-18 2007-10-17 三菱電機株式会社 ダイオード及びその製造方法
DE19713962C1 (de) 1997-04-04 1998-07-02 Siemens Ag Leistungsdiode (FCI-Diode)
JP3968912B2 (ja) * 1999-05-10 2007-08-29 富士電機デバイステクノロジー株式会社 ダイオード

Also Published As

Publication number Publication date
TW507384B (en) 2002-10-21
US6737731B1 (en) 2004-05-18
WO2002001643A3 (en) 2002-04-18
AU2001270086A1 (en) 2002-01-08
CN1441968A (zh) 2003-09-10
JP2004502305A (ja) 2004-01-22
WO2002001643A2 (en) 2002-01-03
CN1211865C (zh) 2005-07-20
DE10196362B4 (de) 2007-04-05
JP4608181B2 (ja) 2011-01-05

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 29861

8364 No opposition during term of opposition
R071 Expiry of right