DE10133873B4 - Verfahren zur Herstellung von Kontakten für integrierte Schaltungen - Google Patents

Verfahren zur Herstellung von Kontakten für integrierte Schaltungen Download PDF

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Publication number
DE10133873B4
DE10133873B4 DE10133873A DE10133873A DE10133873B4 DE 10133873 B4 DE10133873 B4 DE 10133873B4 DE 10133873 A DE10133873 A DE 10133873A DE 10133873 A DE10133873 A DE 10133873A DE 10133873 B4 DE10133873 B4 DE 10133873B4
Authority
DE
Germany
Prior art keywords
integrated circuits
making contacts
contacts
making
circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10133873A
Other languages
English (en)
Other versions
DE10133873A1 (de
Inventor
Kae-Horng Wang
Ralf Staub
Matthias Kroenke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Polaris Innovations Ltd
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE10133873A priority Critical patent/DE10133873B4/de
Priority to PCT/EP2002/007507 priority patent/WO2003007355A2/de
Priority to TW091115073A priority patent/TW557502B/zh
Publication of DE10133873A1 publication Critical patent/DE10133873A1/de
Priority to KR1020047000251A priority patent/KR100592581B1/ko
Priority to US10/754,439 priority patent/US7265405B2/en
Application granted granted Critical
Publication of DE10133873B4 publication Critical patent/DE10133873B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE10133873A 2001-07-12 2001-07-12 Verfahren zur Herstellung von Kontakten für integrierte Schaltungen Expired - Fee Related DE10133873B4 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE10133873A DE10133873B4 (de) 2001-07-12 2001-07-12 Verfahren zur Herstellung von Kontakten für integrierte Schaltungen
PCT/EP2002/007507 WO2003007355A2 (de) 2001-07-12 2002-07-05 Verfahren zur herstellung von kontakten für integrierte schaltungen und halbleiterbauelement mit solchen kontakten
TW091115073A TW557502B (en) 2001-07-12 2002-07-08 Method for fabricating contacts for integrated circuits, and semiconductor component having such contacts
KR1020047000251A KR100592581B1 (ko) 2001-07-12 2004-01-08 집적 회로용 콘택의 제조 방법 및 상기 콘택을 가진반도체 소자
US10/754,439 US7265405B2 (en) 2001-07-12 2004-01-09 Method for fabricating contacts for integrated circuits, and semiconductor component having such contacts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10133873A DE10133873B4 (de) 2001-07-12 2001-07-12 Verfahren zur Herstellung von Kontakten für integrierte Schaltungen

Publications (2)

Publication Number Publication Date
DE10133873A1 DE10133873A1 (de) 2003-01-30
DE10133873B4 true DE10133873B4 (de) 2005-04-28

Family

ID=7691515

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10133873A Expired - Fee Related DE10133873B4 (de) 2001-07-12 2001-07-12 Verfahren zur Herstellung von Kontakten für integrierte Schaltungen

Country Status (5)

Country Link
US (1) US7265405B2 (de)
KR (1) KR100592581B1 (de)
DE (1) DE10133873B4 (de)
TW (1) TW557502B (de)
WO (1) WO2003007355A2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005053509A1 (de) * 2005-09-30 2007-04-05 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterprodukts und Halbleiterprodukt
DE10219841B4 (de) * 2001-05-18 2007-11-29 Infineon Technologies North America Corp., San Jose Kontaktplugausbildung für Bauelemente mit gestapelten Kondensatoren

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200425298A (en) * 2003-05-01 2004-11-16 Nanya Technology Corp Fabrication method for a damascene bitline contact
US7241705B2 (en) * 2004-09-01 2007-07-10 Micron Technology, Inc. Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects
US7416976B2 (en) * 2005-08-31 2008-08-26 Infineon Technologies Ag Method of forming contacts using auxiliary structures
US9378968B2 (en) * 2014-09-02 2016-06-28 United Microelectronics Corporation Method for planarizing semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4662064A (en) * 1985-08-05 1987-05-05 Rca Corporation Method of forming multi-level metallization
EP0365493A2 (de) * 1988-10-20 1990-04-25 STMicroelectronics S.r.l. Herstellen von selbstjustierenden Kontakten ohne Maske
WO1999044232A1 (en) * 1998-02-27 1999-09-02 Micron Technology, Inc. Method of increasing alignment tolerances for interconnect structures
US5981326A (en) * 1998-03-23 1999-11-09 Wanlass; Frank M. Damascene isolation of CMOS transistors
JP2001035808A (ja) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5362666A (en) * 1992-09-18 1994-11-08 Micron Technology, Inc. Method of producing a self-aligned contact penetrating cell plate
US6027997A (en) * 1994-03-04 2000-02-22 Motorola, Inc. Method for chemical mechanical polishing a semiconductor device using slurry
US5541870A (en) * 1994-10-28 1996-07-30 Symetrix Corporation Ferroelectric memory and non-volatile memory cell for same
JP2814972B2 (ja) * 1995-12-18 1998-10-27 日本電気株式会社 半導体装置の製造方法
JP2971411B2 (ja) * 1997-01-28 1999-11-08 台湾茂▲しい▼電子股▲ふん▼有限公司 Ｄｒａｍのビット線セルフアライン工程及び基板を破壊しないイオンレイアウト工程
US6329681B1 (en) * 1997-12-18 2001-12-11 Yoshitaka Nakamura Semiconductor integrated circuit device and method of manufacturing the same
US6096633A (en) * 1998-10-28 2000-08-01 United Microelectronics Corp. Dual damascene process for forming local interconnect
US6180453B1 (en) * 1998-12-21 2001-01-30 Vanguard International Semiconductor Corporation Method to fabricate a DRAM cell with an area equal to five times the minimum used feature, squared
TW415089B (en) * 1999-05-07 2000-12-11 Taiwan Semiconductor Mfg Fabrication method of landing pad
TW408446B (en) * 1999-06-22 2000-10-11 United Microelectronics Corp The manufacture method of the node contact
KR100322536B1 (ko) * 1999-06-29 2002-03-18 윤종용 에치 백을 이용한 다결정 실리콘 컨택 플러그 형성방법 및 이를 이용한 반도체 소자의 제조방법
DE19935852A1 (de) 1999-07-29 2001-02-01 Infineon Technologies Ag Verfahren zur Herstellung integrierter Halbleiterbauelemente
US6159808A (en) * 1999-11-12 2000-12-12 United Semiconductor Corp. Method of forming self-aligned DRAM cell
DE10119873A1 (de) 2001-04-24 2002-10-31 Infineon Technologies Ag Verfahren zur Herstellung von Metall/Halbleiter-Kontakten

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4662064A (en) * 1985-08-05 1987-05-05 Rca Corporation Method of forming multi-level metallization
EP0365493A2 (de) * 1988-10-20 1990-04-25 STMicroelectronics S.r.l. Herstellen von selbstjustierenden Kontakten ohne Maske
WO1999044232A1 (en) * 1998-02-27 1999-09-02 Micron Technology, Inc. Method of increasing alignment tolerances for interconnect structures
US5981326A (en) * 1998-03-23 1999-11-09 Wanlass; Frank M. Damascene isolation of CMOS transistors
JP2001035808A (ja) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10219841B4 (de) * 2001-05-18 2007-11-29 Infineon Technologies North America Corp., San Jose Kontaktplugausbildung für Bauelemente mit gestapelten Kondensatoren
DE102005053509A1 (de) * 2005-09-30 2007-04-05 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterprodukts und Halbleiterprodukt

Also Published As

Publication number Publication date
WO2003007355A3 (de) 2003-09-18
KR20040015792A (ko) 2004-02-19
KR100592581B1 (ko) 2006-06-26
US20040195596A1 (en) 2004-10-07
DE10133873A1 (de) 2003-01-30
US7265405B2 (en) 2007-09-04
TW557502B (en) 2003-10-11
WO2003007355A2 (de) 2003-01-23

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

R081 Change of applicant/patentee

Owner name: INFINEON TECHNOLOGIES AG, DE

Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE

Owner name: POLARIS INNOVATIONS LTD., IE

Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE

R081 Change of applicant/patentee

Owner name: POLARIS INNOVATIONS LTD., IE

Free format text: FORMER OWNER: INFINEON TECHNOLOGIES AG, 85579 NEUBIBERG, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee