CY1108484T1 - Μεθοδος για την αποθεση πυριτιου - Google Patents

Μεθοδος για την αποθεση πυριτιου

Info

Publication number
CY1108484T1
CY1108484T1 CY20081101261T CY081101261T CY1108484T1 CY 1108484 T1 CY1108484 T1 CY 1108484T1 CY 20081101261 T CY20081101261 T CY 20081101261T CY 081101261 T CY081101261 T CY 081101261T CY 1108484 T1 CY1108484 T1 CY 1108484T1
Authority
CY
Cyprus
Prior art keywords
silicon
chamber
plasma
hydrogen
gas containing
Prior art date
Application number
CY20081101261T
Other languages
Greek (el)
English (en)
Inventor
Tobias Roschek
Bernd Rech
Original Assignee
Forschungszentrum Jülich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Jülich GmbH filed Critical Forschungszentrum Jülich GmbH
Publication of CY1108484T1 publication Critical patent/CY1108484T1/el

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CY20081101261T 2003-02-27 2008-11-06 Μεθοδος για την αποθεση πυριτιου CY1108484T1 (el)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10308381A DE10308381B4 (de) 2003-02-27 2003-02-27 Verfahren zur Abscheidung von Silizium
EP04703337A EP1601813B1 (de) 2003-02-27 2004-01-20 Verfahren zur abscheidung von silizium

Publications (1)

Publication Number Publication Date
CY1108484T1 true CY1108484T1 (el) 2014-04-09

Family

ID=32863924

Family Applications (1)

Application Number Title Priority Date Filing Date
CY20081101261T CY1108484T1 (el) 2003-02-27 2008-11-06 Μεθοδος για την αποθεση πυριτιου

Country Status (15)

Country Link
US (1) US7981776B2 (cg-RX-API-DMAC10.html)
EP (1) EP1601813B1 (cg-RX-API-DMAC10.html)
JP (1) JP4733627B2 (cg-RX-API-DMAC10.html)
KR (1) KR101127047B1 (cg-RX-API-DMAC10.html)
CN (1) CN1754007A (cg-RX-API-DMAC10.html)
AT (1) ATE403763T1 (cg-RX-API-DMAC10.html)
AU (1) AU2004215243B2 (cg-RX-API-DMAC10.html)
CA (1) CA2517598C (cg-RX-API-DMAC10.html)
CY (1) CY1108484T1 (cg-RX-API-DMAC10.html)
DE (2) DE10308381B4 (cg-RX-API-DMAC10.html)
ES (1) ES2311792T3 (cg-RX-API-DMAC10.html)
PT (1) PT1601813E (cg-RX-API-DMAC10.html)
RU (1) RU2005129984A (cg-RX-API-DMAC10.html)
SI (1) SI1601813T1 (cg-RX-API-DMAC10.html)
WO (1) WO2004076713A1 (cg-RX-API-DMAC10.html)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006216624A (ja) * 2005-02-01 2006-08-17 Mitsubishi Heavy Ind Ltd 太陽電池及び太陽電池の製造方法
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
TWI350006B (en) * 2007-10-05 2011-10-01 Ind Tech Res Inst Plasma enhanced thin film deposition method
US7741144B2 (en) 2007-11-02 2010-06-22 Applied Materials, Inc. Plasma treatment between deposition processes
JP5005588B2 (ja) 2008-03-14 2012-08-22 東洋自動機株式会社 袋移送及び傾き修正装置
RU2367600C1 (ru) * 2008-04-16 2009-09-20 Борис Георгиевич Грибов Способ получения кремния высокой чистоты
DE102008063737A1 (de) 2008-12-18 2010-06-24 Forschungszentrum Jülich GmbH Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat
TW201120942A (en) * 2009-12-08 2011-06-16 Ind Tech Res Inst Method for depositing microcrystalline silicon and monitor device of a plasma enhanced deposition
CN102108494B (zh) * 2009-12-23 2013-01-16 财团法人工业技术研究院 微晶硅薄膜的沉积方法及等离子体辅助沉积的监控装置
CN102031503B (zh) * 2010-09-29 2012-12-05 理想能源设备(上海)有限公司 硅薄膜的沉积方法
US8642376B2 (en) * 2011-05-16 2014-02-04 Applied Materials, Inc. Methods for depositing a material atop a substrate
DE102014007767B4 (de) * 2014-05-21 2025-08-28 Christian Bauch Verfahren zur Herstellung halogenierter Oligosilane aus Silicium und Tetrachlorsilan
DE102014007766B4 (de) * 2014-05-21 2025-10-16 Christian Bauch Verfahren zur plasmachemischen Herstellung halogenierter Oligosilane aus Tetrachlorsilan
CN114242833A (zh) * 2021-11-18 2022-03-25 国家电投集团科学技术研究院有限公司 异质结太阳电池的硅片处理方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334423A (en) * 1993-01-28 1994-08-02 United Solar Systems Corp. Microwave energized process for the preparation of high quality semiconductor material
JPH09232235A (ja) * 1995-02-24 1997-09-05 Mitsui Toatsu Chem Inc 光電変換素子
JPH1027762A (ja) * 1996-03-18 1998-01-27 Hyundai Electron Ind Co Ltd 誘導結合形プラズマｃｖｄ方法及びこれを用いて生成された非晶質シリコン薄膜，及び、窒化シリコン膜，非晶質薄膜トランジスタ
US5824940A (en) * 1997-01-27 1998-10-20 Alfred University Ceramic bullet-proof fabric
JPH11233801A (ja) * 1998-02-17 1999-08-27 Canon Inc 微結晶シリコン膜の形成方法、および光起電力素子
JP4335389B2 (ja) * 1999-11-24 2009-09-30 株式会社カネカ シリコン系薄膜光電変換装置の製造方法
JP3857024B2 (ja) * 2000-07-17 2006-12-13 株式会社神戸製鋼所 微結晶シリコン薄膜の形成方法
JP2003007629A (ja) * 2001-04-03 2003-01-10 Canon Inc シリコン系膜の形成方法、シリコン系膜および半導体素子
JP4397391B2 (ja) * 2006-10-30 2010-01-13 信越フィルム株式会社 ガスバリア性プラスチックおよびプラスチックフィルムの製造方法

Also Published As

Publication number Publication date
CN1754007A (zh) 2006-03-29
DE10308381B4 (de) 2012-08-16
DE502004007776D1 (de) 2008-09-18
US20060240649A1 (en) 2006-10-26
ES2311792T3 (es) 2009-02-16
DE10308381A1 (de) 2004-09-16
EP1601813B1 (de) 2008-08-06
EP1601813A1 (de) 2005-12-07
KR101127047B1 (ko) 2012-04-23
JP2006519482A (ja) 2006-08-24
WO2004076713A1 (de) 2004-09-10
JP4733627B2 (ja) 2011-07-27
RU2005129984A (ru) 2006-05-10
PT1601813E (pt) 2008-11-13
CA2517598A1 (en) 2004-09-10
ATE403763T1 (de) 2008-08-15
SI1601813T1 (sl) 2009-02-28
AU2004215243B2 (en) 2009-12-03
AU2004215243A1 (en) 2004-09-10
CA2517598C (en) 2012-05-15
KR20050114218A (ko) 2005-12-05
US7981776B2 (en) 2011-07-19

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