CS201645B1 - Integrated logical circuit - Google Patents

Integrated logical circuit Download PDF

Info

Publication number
CS201645B1
CS201645B1 CS78114A CS11478A CS201645B1 CS 201645 B1 CS201645 B1 CS 201645B1 CS 78114 A CS78114 A CS 78114A CS 11478 A CS11478 A CS 11478A CS 201645 B1 CS201645 B1 CS 201645B1
Authority
CS
Czechoslovakia
Prior art keywords
transistor
electrode
controlled
electric field
conductivity type
Prior art date
Application number
CS78114A
Other languages
Czech (cs)
English (en)
Inventor
Vjaceslav J Kremlev
Artases R Nazarjan
Alexej V Luvasevskij
Viliam N Kokin
Original Assignee
Kremlev V J
Artases R Nazarjan
Alexej V Luvasevskij
Viliam N Kokin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU772441813A external-priority patent/SU602056A1/ru
Priority claimed from SU772441910A external-priority patent/SU633395A1/ru
Application filed by Kremlev V J, Artases R Nazarjan, Alexej V Luvasevskij, Viliam N Kokin filed Critical Kremlev V J
Publication of CS201645B1 publication Critical patent/CS201645B1/cs

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09414Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225Charge injection in static induction transistor logic structures [SITL]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CS78114A 1977-01-10 1978-01-05 Integrated logical circuit CS201645B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SU772441813A SU602056A1 (ru) 1977-01-10 1977-01-10 Интегральный инвертор
SU772441910A SU633395A1 (ru) 1977-01-10 1977-01-10 Интегральна логическа схема

Publications (1)

Publication Number Publication Date
CS201645B1 true CS201645B1 (en) 1980-11-28

Family

ID=26665610

Family Applications (1)

Application Number Title Priority Date Filing Date
CS78114A CS201645B1 (en) 1977-01-10 1978-01-05 Integrated logical circuit

Country Status (10)

Country Link
US (1) US4175240A (de)
JP (1) JPS53111287A (de)
CH (1) CH631298A5 (de)
CS (1) CS201645B1 (de)
DD (1) DD134585A1 (de)
DE (1) DE2800924C2 (de)
FR (1) FR2377094A1 (de)
GB (1) GB1557657A (de)
NL (1) NL7800133A (de)
PL (1) PL114678B1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4638344A (en) * 1979-10-09 1987-01-20 Cardwell Jr Walter T Junction field-effect transistor controlled by merged depletion regions
US4698653A (en) * 1979-10-09 1987-10-06 Cardwell Jr Walter T Semiconductor devices controlled by depletion regions
JPH0760997B2 (ja) * 1986-06-09 1995-06-28 日本テキサス・インスツルメンツ株式会社 高耐圧出力回路
JP3300593B2 (ja) * 1995-06-15 2002-07-08 株式会社東芝 半導体集積回路装置
US6737301B2 (en) 2000-07-13 2004-05-18 Isothermal Systems Research, Inc. Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor
FI20150334A (fi) 2015-01-14 2016-07-15 Artto Mikael Aurola Paranneltu puolijohdekokoonpano

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4065680A (en) * 1974-07-11 1977-12-27 Signetics Corporation Collector-up logic transmission gates
DE2509530C2 (de) * 1975-03-05 1985-05-23 Ibm Deutschland Gmbh, 7000 Stuttgart Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren
JPS608628B2 (ja) * 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置
US4053923A (en) * 1976-09-23 1977-10-11 Motorola, Inc. Integrated logic elements with improved speed-power characteristics

Also Published As

Publication number Publication date
JPS53111287A (en) 1978-09-28
DE2800924C2 (de) 1982-10-28
PL114678B1 (en) 1981-02-28
PL203794A1 (pl) 1978-10-23
NL7800133A (nl) 1978-07-12
DE2800924A1 (de) 1978-07-20
GB1557657A (en) 1979-12-12
CH631298A5 (de) 1982-07-30
US4175240A (en) 1979-11-20
FR2377094B1 (de) 1980-05-16
DD134585A1 (de) 1979-03-07
FR2377094A1 (fr) 1978-08-04

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