CN2395388Y - Blue light emitting diode - Google Patents

Blue light emitting diode Download PDF

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Publication number
CN2395388Y
CN2395388Y CN99244280U CN99244280U CN2395388Y CN 2395388 Y CN2395388 Y CN 2395388Y CN 99244280 U CN99244280 U CN 99244280U CN 99244280 U CN99244280 U CN 99244280U CN 2395388 Y CN2395388 Y CN 2395388Y
Authority
CN
China
Prior art keywords
emitting diode
electrostatic protection
blue light
light emitting
blue led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN99244280U
Other languages
Chinese (zh)
Inventor
叶寅夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Everlight Electronics Co Ltd
Original Assignee
Everlight Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Everlight Electronics Co Ltd filed Critical Everlight Electronics Co Ltd
Priority to CN99244280U priority Critical patent/CN2395388Y/en
Application granted granted Critical
Publication of CN2395388Y publication Critical patent/CN2395388Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16135Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The utility model relates to a blue light emitting diode comprising an electrostatic protection device and a blue light emitting diode. The blue light emitting diode mainly comprises an aluminium monoxide base plate and a nitrogen arsenide layer which is arranged on the base plate, and the electrostatic protection device is arranged in the package of the blue light emitting diode. The blue light emitting diode overrides the electrostatic protection device in a crystal covering manner, and a reflection layer is arranged below the electrostatic protection device. The utility model has the advantages that cost is reduced, luminous efficiency is enhanced because light rays emitted from the surface of the upper side of the light emitting diode can not be covered by the electrode, and the luminous efficiency is further enhanced through the reflection layer which is arranged below a zener diode.

Description

Blue LED
The utility model relates to a kind of blue LED.
Light-emitting diode since have long-life, volume little, power consumption low and the monochromatic characteristics of luminescence, therefore in computer periphery, display, instrument indication, have been widely used so far, and in recent years because the research and development maturation of blue LED, make luminous the providing of light-emitting diode full color be achieved, and make the effectiveness of light-emitting diode more extensive.Yet, therefore difference is also arranged on its encapsulation and circuit design because blue LED uses the base material different with other color LEDs.
Referring to shown in Figure 1, be the schematic diagram that a kind of blue light-emitting diode commonly used is used.This blue light diode 200 mainly comprises an aluminum oxide substrate and the arsenic nitrogen layer on this substrate, and this arsenic nitrogen layer can constitute the active layers of this blue light-emitting diode, to send blue light.Because aluminum oxide substrate is a non-conductive material, and the arsenic nitrogen layer is a thin conductive layer, the blue light-emitting diode that therefore has this structure very easily is subjected to the influence of static, destroys the use and the performance of assembly.In the practical application of this blue light-emitting diode, can add an electrostatic discharge protective circuit, for example Zener diode blue light-emitting diode parallel connection therewith is with rapid eliminating static.Yet as shown in this figure, in blue light-emitting diode commonly used, Zener diode and blue light-emitting diode are packing respectively, therefore on the degree of difficulty that the cost and the circuit of encapsulation are assembled, all remain necessity of reducing, with reduction user's burden.
Moreover in above-mentioned blue LED, the electrode of diode is to be built up in the diode upside, that is on light-emitting area, this electrode can hide the light that fraud is emitted by the diode active layers, makes the deterioration of efficiency of this blue LED.
The purpose of this utility model is to provide a kind of novel blue LED, wherein is built within the LED package in the Zener diode.By this easy encapsulating structure, reach economy system, cost and built-up time, and can improve the luminous efficiency of blue LED.
The purpose of this utility model is achieved in that a kind of blue LED; it comprises an electrostatic protection setting and a blue light-emitting diode; this blue light-emitting diode mainly is included in an aluminum oxide substrate and arsenic nitrogen layer on this substrate, described in electrostatic protection be built in the encapsulation of described blue LED in being provided with.
Described blue LED is stacked and placed on the described electrostatic protection device to cover crystal type.
Described electrostatic protection device is a Zener diode.
Described blue LED and described electrostatic protection device are settled side by side.
Described electrostatic protection device is a Zener diode.
Set up the reflector under the described electrostatic protection device.
In sum, blue LED of the present utility model can be simplified circuit layout and encapsulation by the Zener diode of setting up in-building type, help using the product of this device to reduce cost, and blue LED places Zener diode to cover crystal type, the light that the light-emitting diode uper side surface sends can not covered by electrode, luminous efficiency is improved, and by set up a reflector under Zener diode, can further improve luminous efficiency.
Below in conjunction with accompanying drawing and specific embodiments, the utility model is described further.
Fig. 1 is a blue LED schematic diagram of the present utility model;
Fig. 2 is another preferred embodiment schematic diagram of the utility model;
Fig. 3 is the another preferred embodiment schematic diagram of the utility model;
Fig. 4 is the utility model preferred embodiment schematic diagram again.
The utility model be a kind of can the economy system cost and the blue LED of built-up time.Referring to shown in Figure 2, this blue LED comprises a light-emitting diode 200 and a Zener diode 202, and is located on the circuit board 100.Light-emitting diode 200 is stacked and placed on this Zener diode 202 to cover crystal type in the utility model feature, directly forms to be connected in parallel, to simplify the process of circuit layout and encapsulation.In other words, Zener diode 202 is built in the encapsulation of this light-emitting diode 200 in being, therefore can simplify encapsulation process, and reduce cost; Moreover owing to light-emitting diode 200 is stacked and placed on this Zener diode 202 to cover crystal type, and reach electric connection via soldered ball 206, therefore the side surface on the light-emitting diode does not have to cover the electrode of being emitted light by the diode active layers, and the efficient of this blue LED is improved.
Fig. 3 is the schematic diagram of another preferred embodiment of the utility model, and wherein light-emitting diode 200 and Zener diode 202 are not to be placed on the same circuit board 100, by this to simplify the process of circuit layout and encapsulation.
Fig. 4 is the utility model preferred embodiment schematic diagram again, this device general type with the device of Fig. 2, but set up a reflector at Zener diode 202 following, therefore the light reflection of being emitted by the diode active layers can be able to be improved the efficient of this blue LED downwards.

Claims (6)

1, a kind of blue LED; it comprises an electrostatic protection setting and a blue light-emitting diode; this blue light-emitting diode mainly is included in an aluminum oxide substrate and the arsenic nitrogen layer on this substrate, it is characterized in that: be built in described electrostatic protection is provided with in the encapsulation of described blue LED.
2, blue LED as claimed in claim 1 is characterized in that: described blue LED is stacked and placed on the described electrostatic protection device to cover crystal type.
3, blue LED as claimed in claim 1 or 2 is characterized in that: described electrostatic protection device is a Zener diode.
4, blue LED as claimed in claim 1 is characterized in that: described blue LED and described electrostatic protection device are settled side by side.
5, as claim 1 or 4 described blue LEDs, it is characterized in that: described electrostatic protection device is a Zener diode.
6, blue LED as claimed in claim 2 is characterized in that: set up the reflector under the described electrostatic protection device.
CN99244280U 1999-09-10 1999-09-10 Blue light emitting diode Expired - Fee Related CN2395388Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN99244280U CN2395388Y (en) 1999-09-10 1999-09-10 Blue light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN99244280U CN2395388Y (en) 1999-09-10 1999-09-10 Blue light emitting diode

Publications (1)

Publication Number Publication Date
CN2395388Y true CN2395388Y (en) 2000-09-06

Family

ID=34030406

Family Applications (1)

Application Number Title Priority Date Filing Date
CN99244280U Expired - Fee Related CN2395388Y (en) 1999-09-10 1999-09-10 Blue light emitting diode

Country Status (1)

Country Link
CN (1) CN2395388Y (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100370632C (en) * 2004-04-17 2008-02-20 Lg电子有限公司 Light emitting device and fabrication method thereof and light emitting system using the same
CN100386891C (en) * 2004-07-02 2008-05-07 北京工业大学 High anti-static high efficiency light-emitting diode and producing method
CN100452452C (en) * 2005-05-17 2009-01-14 财团法人工业技术研究院 Light emitting device with LED flipped side-structure
CN102045924A (en) * 2010-10-28 2011-05-04 映瑞光电科技(上海)有限公司 Lighting circuit
CN101924099B (en) * 2009-06-11 2012-03-21 亿光电子工业股份有限公司 Light-emitting diode device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100370632C (en) * 2004-04-17 2008-02-20 Lg电子有限公司 Light emitting device and fabrication method thereof and light emitting system using the same
CN100386891C (en) * 2004-07-02 2008-05-07 北京工业大学 High anti-static high efficiency light-emitting diode and producing method
CN100452452C (en) * 2005-05-17 2009-01-14 财团法人工业技术研究院 Light emitting device with LED flipped side-structure
CN101924099B (en) * 2009-06-11 2012-03-21 亿光电子工业股份有限公司 Light-emitting diode device
CN102045924A (en) * 2010-10-28 2011-05-04 映瑞光电科技(上海)有限公司 Lighting circuit

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Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee