CN217655898U

CN217655898U - Light-emitting diode with nano silver reflecting layer

Info

Publication number: CN217655898U
Application number: CN202220680259.5U
Authority: CN
Inventors: 卢福星; 蔡明华; 兰小平
Original assignee: Xiamen Pvtech Co ltd
Current assignee: Xiamen Pvtech Co ltd
Priority date: 2022-03-25
Filing date: 2022-03-25
Publication date: 2022-10-25
Anticipated expiration: 2032-03-25

Abstract

The application provides a light emitting diode with a nano-silver reflecting layer, which comprises a base, an insulating layer, a lamp wick, the nano-silver reflecting layer, two wires, a plurality of fluorescent powders and a light-transmitting cover body. The insulating layer is positioned on the base, the nano silver reflecting layer surrounds the lamp wick, the nano silver reflecting layer is provided with a combination hole, the bearing part of the insulating layer penetrates out of the combination hole, the lamp wick is positioned on the bearing part, and two ends of the lead are respectively connected with the lamp wick and the base; the plurality of fluorescent powders are arranged on the surface of the lamp wick, and the light-transmitting cover covers the lamp wick, the nano-silver reflecting layer and the conducting wires and is positioned on the insulating layer, so that the light-emitting diode with the embedded nano-silver reflecting technology can improve the reflecting efficiency by 30 percent when emitting light.

Description

Light-emitting diode with nano silver reflecting layer

Technical Field

The present invention relates to a light emitting diode with a reflective structure, and more particularly to a light emitting diode with a reflective layer made of nano-silver.

Background

The LED (Light emitting diode) can be widely applied to the fields of various indications, displays, decorations, backlight sources, general illumination, urban night scenes and the like. Compared with the traditional lighting technology, the LED lamp has the characteristics of energy conservation, environmental protection, long service life, small volume, high brightness, low power consumption, easy matching with an integrated circuit, simple driving and the like, thereby being widely applied to the field of lighting as a light source.

At present, the LED lamp panels are widely used in places such as factory buildings, workshops, assembly lines, markets, closed stadiums, very high factory buildings and the like. The led is a commonly used light emitting device, which generally includes a wick, a base, and fluorescent powder, etc. to form a structure, and as the times evolve, people have to meet the requirement of the led for illumination.

The current LED chip is generally packaged in an LED support, the LED support includes a plastic support and a metal support, and the plastic support is generally made of PC (polycarbonate). The inner wall of the plastic support is a light reflecting surface, which requires the light reflecting surface to have very high smoothness, so that the light emitted by the LED chip can be reflected as much as possible, but as a plastic material, the plastic support has not particularly high reflectivity, and can absorb certain light, which causes energy loss. Even the PPA (polyphthalamide) material, which has a reflectivity of only about 90%, can act as a heat sink for the LED and conduct heat to the circuit board.

SUMMERY OF THE UTILITY MODEL

In view of the above problem, an embodiment of the present invention provides a light emitting diode with a nano silver reflective layer, including a base, an insulating layer, a nano silver reflective layer, a wick, a phosphor and a light transmissive cover, wherein the insulating layer has a bearing portion and two holes, the insulating layer is located on the base, the nano silver reflective layer surrounds the wick, the nano silver reflective layer has a combining hole, the bearing portion penetrates through the combining hole, the wick is located on the bearing portion and is connected to two wires, each wire has one end connected to the wick, the other end passes through the nano silver reflective layer and the hole of the insulating layer and is connected to the base, the phosphor is disposed on the surface of the wick, the light transmissive cover covers the wick, the nano silver reflective layer and the wires are located on the insulating layer.

According to a preferred embodiment of the light emitting diode with the nano silver reflective layer, the nano silver reflective layer includes a bottom wall and a plurality of sidewalls extending outward from the periphery of the bottom wall, the bottom wall has the bonding holes, and the wick is located in the bonding holes.

According to a preferred embodiment of the led with a nanosilver reflective layer, the sidewalls include two opposite first walls and two opposite second walls, the first walls are adjacent to the second walls, the first walls and the second walls form the bonding hole and an opening in a vertical direction, and the bonding hole is adjacent to the insulating layer.

According to a preferred embodiment of the above led with the nanosilver reflective layer, at least one of the first wall surface or the second wall surface is trapezoidal, and the opening is larger than the bonding hole.

According to a preferred embodiment of the light emitting diode with the nanosilver reflective layer, the first wall surface and the second wall surface are trapezoidal, and the opening is larger than the bonding hole.

According to a preferred embodiment of the above light emitting diode with a nano silver reflective layer, the nano silver reflective layer includes two opposite bonding holes and an opening, the opening is larger than the bonding holes, the bonding holes are adjacent to the insulating layer, and the wick is located in the bonding holes.

According to a preferred embodiment of the above light emitting diode with a nano silver reflective layer, the light transmissive cover is made of silicone adhesive, and the nano silver reflective layer is made of nano silver.

In summary, according to the light emitting diode with a nano-silver reflective layer of the embedded nano-silver reflective technology of the present invention, light is reflected by the nano-silver reflective layer, which can provide higher luminance brightness. According to one embodiment, the nano-silver reflective layer is made of nano-silver, and the reflective capability can be improved by 30%.

Drawings

FIG. 1 is a schematic cross-sectional view of a light emitting diode according to some embodiments;

FIG. 2 is a schematic diagram of an LED according to some embodiments;

FIG. 3 is an exploded view of a light emitting diode according to some embodiments;

fig. 4 is a schematic view of an appearance of a nanosilver reflective layer according to some embodiments.

Description of reference numerals:

the light emitting diode device comprises a light emitting diode 1, a base 11, a conductive plate 111, a conductive plate 112, an insulating layer 12, a carrying part 120, a hole 121, a wick 13, a nano silver reflecting layer 14, a bottom wall 140, a first wall 141, a second wall 142, a combining hole 143, an opening 144, a lead 15, fluorescent powder 16, a light-transmitting cover 17, and a vertical direction H.

The detailed features and advantages of the present invention are described in detail in the following embodiments, which are sufficient for anyone skilled in the art to understand the technical content of the present invention and to implement the present invention, and the related objects and advantages can be easily understood by anyone skilled in the art according to the disclosure, claims and drawings of the present specification.

Detailed Description

To explain technical contents, structural features, and objects and effects of the technical solutions in detail, the following detailed description is given with reference to the accompanying drawings in conjunction with the embodiments.

Referring to fig. 1 to 4, fig. 1 is a cross-sectional view of a light emitting diode; FIG. 2 is a schematic view of an LED;

FIG. 3 is an exploded view of the LED; fig. 4 is an appearance diagram of the nano silver reflective layer.

According to some embodiments, the led 1 includes a base 11, an insulating layer 12, a wick 13, a nano-silver reflective layer 14, two wires 15, a plurality of phosphors 16, and a light-transmissive cover 17.

According to some embodiments, the insulating layer 12 has a carrying portion 120 and two holes 121, the insulating layer 12 is located on the base 11, and the base 11 has a long conductive plate 111 and a short conductive plate 112, which are a positive electrode and a negative electrode, respectively. .

According to some embodiments, the wick 13 is located on the insulating layer 12.

According to some embodiments, the nanosilver reflective layer 14 surrounds the wick 13, the nanosilver reflective layer 14 has a bonding hole 143, and the carrier 120 penetrates through the bonding hole 143.

According to some embodiments, the nanosilver reflective layer 14 includes a bottom wall 140 and a plurality of sidewalls extending outward from the periphery of the bottom wall 140, the bottom wall 140 has a combining hole 143, and the wick 13 is located on the supporting portion 120.

According to some embodiments, the bottom wall 140 and each side wall have an included angle therebetween, the included angle being greater than 90 degrees, and optionally any angle within a range of 140 degrees to 160 degrees, such as 149 degrees, 144 degrees, and 155 degrees.

According to some embodiments, one end of each of the wires 15 is connected to the wick 13, and the other end thereof is connected to the base 11 through the nano-silver reflective layer 14 and the hole 121 of the insulating layer 12.

According to some embodiments, a plurality of fluorescent powders 16 are disposed on the surface of the wick 13; the light-transmitting cover 17 covers the wick 13, the nano-silver reflective layer 14 and the wires 15 and is located on the insulating layer 12.

According to some embodiments, the sidewalls of the nanosilver reflective layer 14 include two opposite first walls 141 and two opposite second walls 142, the first walls 141 are adjacent to the second walls 142, and in a vertical direction H, the first walls 141 and the second walls 142 form a bonding hole 143 and an opening 144, the bonding hole 143 is adjacent to the insulating layer 12, and the wick 13 is located in the bonding hole 143.

According to some embodiments, the two opposing first wall surfaces 141 and the two opposing second wall surfaces 142 form a rectangular frame, but not limited thereto, the two opposing first wall surfaces 141 and the two opposing second wall surfaces 142 form a rectangular frame.

According to some embodiments, at least one of the first wall 141 or the second wall 142 is trapezoidal, and the opening 144 is larger than the coupling hole 143. According to the embodiment shown in fig. 1 and 2, the first wall 141 and the second wall 142 are both trapezoidal.

According to some embodiments, the nanosilver reflective layer 14 has a ring structure, the nanosilver reflective layer 14 includes two opposite bonding holes 143 and an opening 144, the opening 144 is larger than the bonding hole 143, the bonding hole 143 is adjacent to the insulating layer 12, and the wick 13 is located at the bonding hole 143.

According to some embodiments, the light-transmissive cover 17 is made of resin or silicone adhesive.

According to some embodiments, the nanosilver reflective layer 14 is fabricated from nanosilver. The nano silver particles in the nano silver reflective layer 14 can effectively reflect the light reflected by the fluorescent powder 16, so that the brightness of the LED chip is further improved

In summary, according to the led with the embedded nanosilver reflective technology of the present invention, light is reflected by the nanosilver reflective layer, so as to provide higher luminance brightness. According to one embodiment, the nano-silver reflective layer is made of nano-silver, and the reflective capability can be increased to 30%.

It should be noted that, although the above embodiments have been described herein, the scope of the present invention is not limited thereby. Therefore, based on the innovative concept of the present invention, the changes and modifications of the embodiments described herein, or the equivalent structure or equivalent process changes made by the contents of the specification and the drawings of the present invention, directly or indirectly apply the above technical solutions to other related technical fields, all included in the protection scope of the present invention.

Claims

1. A light emitting diode with a nano silver reflecting layer comprises a base, an insulating layer, the nano silver reflecting layer, a lamp wick, fluorescent powder and a light transmitting cover body, and is characterized in that the insulating layer is provided with a bearing part and two holes, the insulating layer is positioned on the base, the nano silver reflecting layer surrounds the lamp wick, the nano silver reflecting layer is provided with a combination hole, the bearing part penetrates through the combination hole, the lamp wick is positioned on the bearing part and is connected with two wires, one end of each wire is connected with the lamp wick, the other end of each wire penetrates through the nano silver reflecting layer and the holes of the insulating layer and is connected with the base, the fluorescent powder is arranged on the surface of the lamp wick, and the light transmitting cover body covers the lamp wick, the nano silver reflecting layer and the wires and is positioned on the insulating layer.

2. The light-emitting diode with a nanosilver reflective layer of claim 1, wherein: the nano silver reflecting layer comprises a bottom wall and a plurality of side walls extending outwards from the periphery of the bottom wall, the bottom wall is provided with the combination holes, and the lamp wick is located in the combination holes.

3. The light-emitting diode with a nanosilver reflective layer of claim 2, wherein: the side walls include two opposite first wall surfaces and two opposite second wall surfaces, the first wall surfaces are adjacent to the second wall surfaces, in a vertical direction, the first wall surfaces and the second wall surfaces form the combination hole and an opening, and the combination hole is adjacent to the insulation layer.

4. The light-emitting diode with a nanosilver reflective layer of claim 3, wherein: at least one of the first wall surface or the second wall surface is trapezoidal, and the opening is larger than the combination hole.

5. The light-emitting diode with a nanosilver reflective layer of claim 3, wherein: the first wall surface and the second wall surface are trapezoidal, and the opening is larger than the combination hole.

6. The light-emitting diode with a nanosilver reflective layer of claim 1, wherein: the nano silver reflecting layer comprises two opposite combination holes and an opening, the opening is larger than the combination holes, the combination holes are adjacent to the insulating layer, and the lamp wick is located in the combination holes.

7. The light-emitting diode with a nanosilver reflective layer of claim 1, wherein: the transparent mask body is made of silicone resin glue.

8. The light-emitting diode with a nanosilver reflective layer of claim 1, wherein: the nano silver reflecting layer is made of nano silver.