CN217822756U

CN217822756U - Integrated packaging diode

Info

Publication number: CN217822756U
Application number: CN202221344898.0U
Authority: CN
Inventors: 叶丹凤; 魏婷
Original assignee: Suqian Jiexin Semiconductor Co ltd
Current assignee: Suqian Goode Semiconductor Co ltd
Priority date: 2022-05-31
Filing date: 2022-05-31
Publication date: 2022-11-15
Anticipated expiration: 2032-05-31

Abstract

The utility model relates to a diode technology field especially relates to an integrated packaging diode, including diode housing, diode housing's lower tip fixed mounting has packaging substrate, packaging substrate's the equal fixed mounting in the left and right sides has the electrode pin, packaging substrate's upper end is installed and is packaged the chip, diode housing's inside fixed mounting has heat dissipation layer three, the lower tip fixed mounting of heat dissipation layer three has heat dissipation layer four, heat dissipation layer four's side tip has seted up louvre three. The utility model discloses a diode housing comprises shielding layer one, heat dissipation layer one and shielding layer two, and the heat dissipation layer is to better heat dispersion together, and two shielding layer one and single shielding layer two wrap up the first of heat dissipation layer one simultaneously, effectively play the shielding effect, through set up heat dissipation layer one in the diode housing to effectively improve diode housing's heat dissipation.

Description

Integrated packaging diode

Technical Field

The utility model relates to a diode technical field especially relates to an integrate and encapsulate diode.

Background

A diode is an electronic device made of semiconductor material (silicon, selenium, germanium, etc.). It has one-way conducting performance, that is, when positive voltage is applied to the anode of the diode, the diode is conducted. When a reverse voltage is applied to the anode and the cathode, the diode is turned off. Therefore, the on/off of the diode corresponds to the on/off of the switch, and the diode is one of the most recently produced semiconductor devices and is widely used. In particular, in various electronic circuits, a diode is reasonably connected to a component such as a resistor, a capacitor, or an inductor

The existing diode adopts an integrated packaging structure, but the heat dissipation area inside the existing integrated type sealed diode is small, and the heat dissipation layer is single, so that the integrated type sealed diode can be prolonged in service life due to the high temperature when in operation.

SUMMERY OF THE UTILITY MODEL

In order to overcome the defects of the prior art, the utility model provides an integrate and encapsulate diode.

In order to solve the technical problem, the utility model provides a following technical scheme: the utility model provides an integrate and encapsulate diode, includes diode housing, diode housing's lower tip fixed mounting has packaging substrate, the equal fixed mounting in the left and right sides of packaging substrate has the electrode pin, packaging chip is installed to packaging substrate's upper end, diode housing's inside fixed mounting has heat dissipation layer three, the lower tip fixed mounting in heat dissipation layer three has heat dissipation layer four, heat dissipation hole three has been seted up to heat dissipation layer four's side tip.

As a preferred technical scheme of the utility model, diode shells inner wall is constituteed including heat dissipation layer one, shielding layer two and two shielding layer one, two shielding layer one fixed mounting is in shielding layer two belows, heat dissipation layer one is located between two shielding layer one, packaging substrate's lower tip fixed mounting has heat dissipation layer two, louvre one has been seted up to the side tip of heat dissipation layer two.

As the utility model discloses a preferred technical scheme, louvre two has been seted up to the side end on heat dissipation layer three, the lower tip fixed mounting on heat dissipation layer four has heat dissipation layer five, louvre four has been seted up to the side end on heat dissipation layer five, the shape on heat dissipation layer five is the arc.

Compared with the prior art, the utility model discloses the beneficial effect that can reach is:

1. a plurality of second heat dissipation holes are formed in the side end portion of the third heat dissipation layer, the integral heat dissipation performance is improved through the second heat dissipation holes, the second heat dissipation layer is fixedly mounted at the lower end portion of the packaging substrate, the heat dissipation performance of the packaging substrate can be improved through the second heat dissipation layer, the first heat dissipation holes are formed in the side end portion of the second heat dissipation layer, the first heat dissipation holes further play a role in heat dissipation, the plurality of heat dissipation layers are integrally arranged on the diode shell, therefore, the integral heat dissipation performance is effectively improved, the integral heat dissipation area is large, and the problem that the whole body is damaged due to high temperature is effectively reduced.

2. The diode shell comprises a first shielding layer, a first heat dissipation layer and a second shielding layer, the first shielding layer, the second shielding layer and the second heat dissipation layer are arranged on the diode shell, the first shielding layer and the second shielding layer wrap the upper half portion of the first heat dissipation layer to effectively play a role in shielding, and the first heat dissipation layer is arranged in the diode shell to effectively improve heat dissipation of the diode shell.

Drawings

Fig. 1 is a schematic structural diagram of a diode housing according to the present invention;

fig. 2 is a schematic structural view of the package substrate of the present invention;

fig. 3 is a schematic structural view of a fourth heat dissipation layer of the present invention;

fig. 4 is a schematic structural view of the first heat dissipation layer of the present invention.

Wherein: 1. a diode case; 11. an electrode pin; 12. packaging the chip; 13. a first shielding layer; 14. a first heat dissipation layer; 15. a second shielding layer; 2. a package substrate; 21. a second heat dissipation layer; 22. a first heat dissipation hole; 3. a third heat dissipation layer; 31. a second heat dissipation hole; 32. a heat dissipation layer IV; 33. a third heat dissipation hole; 34. a fifth heat dissipation layer; 35. and fourthly, radiating holes.

Detailed Description

In order to make the technical means, the creation features, the achievement purposes and the functions of the invention easy to understand, the invention is further explained below with reference to the specific embodiments, but the following embodiments are only the preferred embodiments of the invention, not all. Based on the embodiments in the implementation, other embodiments obtained by those skilled in the art without any creative work belong to the protection scope of the present invention. The experimental procedures in the following examples were carried out in a conventional manner unless otherwise specified, and materials, reagents and the like used in the following examples were commercially available unless otherwise specified.

Embodiment 1 as shown in fig. 1, fig. 2 and fig. 3, an integrated packaged diode includes a diode housing 1, a package substrate 2 is fixedly mounted on a lower end portion of the diode housing 1, electrode pins 11 are fixedly mounted on both left and right sides of the package substrate 2, a package chip 12 is mounted on an upper end portion of the package substrate 2, a heat dissipation layer three 3 is fixedly mounted inside the diode housing 1, a plurality of heat dissipation holes three 33 have a good heat dissipation effect, a heat dissipation hole four 35 is fixedly mounted on a lower end portion of the heat dissipation layer four 32, the heat dissipation hole four 35 is arc-shaped and is close to the package chip 12, so as to further perform a heat dissipation effect, a heat dissipation hole four 35 is formed on a side end portion of the heat dissipation layer five 34, the heat dissipation hole four 35 can perform a heat dissipation effect, a heat dissipation layer three 3 is mounted on an upper end portion of the heat dissipation layer four 32, the heat dissipation layer three 3 performs a heat conduction effect, a lower end portion of the heat dissipation layer three 3 is fixedly mounted on a lower end portion of the heat dissipation layer four 32, and a side end portion of the heat dissipation layer four 33 is formed on a side end portion of the heat dissipation layer 32.

The lower end of the packaging substrate 2 is fixedly provided with a second heat dissipation layer 21, the side end of the second heat dissipation layer 21 is provided with a first heat dissipation hole 22, the side end of the third heat dissipation layer 3 is provided with a second heat dissipation hole 31, the lower end of the fourth heat dissipation layer 32 is fixedly provided with a fifth heat dissipation layer 34, the lower end of the packaging substrate 2 is fixedly provided with the second heat dissipation layer 21, the second heat dissipation layer 21 can improve the heat dissipation performance of the packaging substrate 2, the side end of the second heat dissipation layer 21 is provided with a plurality of first heat dissipation holes 22, the plurality of first heat dissipation holes 22 further play a heat dissipation role, the plurality of heat dissipation layers are integrally arranged on the diode shell 1, so that the heat dissipation performance of the whole is effectively improved, the side end of the fifth heat dissipation layer 34 is provided with a fourth heat dissipation hole 35, and the fifth heat dissipation layer 34 is arc-shaped.

When the diode shell is used, the side end of the heat dissipation layer four 32 is provided with a plurality of heat dissipation holes three 33, the plurality of heat dissipation holes three 33 have a good heat dissipation effect, meanwhile, the lower end of the heat dissipation layer four 32 is fixedly provided with a heat dissipation hole four 35, the heat dissipation hole four 35 is arc-shaped and is close to the distance of the packaged chip 12, the heat dissipation effect is further achieved, the side end of the heat dissipation layer five 34 is provided with a heat dissipation hole four 35, the heat dissipation hole four 35 can achieve the heat dissipation effect, the upper end of the heat dissipation layer four 32 is provided with a heat dissipation layer three 3, the heat dissipation layer three 3 achieves the heat conduction effect, the side end of the heat dissipation layer three 3 is provided with a plurality of heat dissipation holes two 31, the plurality of heat dissipation holes two 31 improve the overall heat dissipation performance, meanwhile, the lower end of the packaged substrate 2 is fixedly provided with a heat dissipation layer two 21, the heat dissipation layer two 21 can improve the heat dissipation performance of the packaged substrate 2, the side end of the heat dissipation layer two 21 is provided with a plurality of heat dissipation holes one 22, the plurality of heat dissipation holes one 22 further achieve the heat dissipation effect, the heat dissipation effect is achieved by integrally arranging a plurality of heat dissipation layers on the diode shell 1, the whole heat dissipation layer is effectively improved, the overall heat dissipation performance, the overall heat dissipation area is larger, and the overall heat dissipation performance is effectively reduced.

Embodiment 2 as shown in fig. 1, 2 and 3, an integrated packaged diode includes a first heat dissipation layer 14, a second shielding layer 15 and two first shielding layers 13, where the first shielding layers 13 are fixedly mounted below the second shielding layer 15, the first heat dissipation layer 14 has good heat dissipation performance, and the first heat dissipation layer 13 and the second shielding layer 15 wrap the upper half of the first heat dissipation layer 14 to effectively shield the first heat dissipation layer 14, and the first heat dissipation layer 14 is located between the first shielding layers 13 by arranging the first heat dissipation layer 14 in the diode case 1.

During the use, diode housing 1 comprises shielding layer one 13, heat dissipation layer one 14 and shielding layer two 15, and heat dissipation layer one 14 plays better heat dispersion, and two shielding layer one 13 and single shielding layer two 15 wrap up the first half of heat dissipation layer one 14 simultaneously, effectively play the shielding effect, through set up heat dissipation layer one 14 in diode housing 1 to effectively improve diode housing 1's heat dissipation.

The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited thereto, and various changes can be made without departing from the gist of the present invention within the scope of knowledge possessed by those skilled in the art.

Claims

1. The utility model provides an integrate and encapsulate diode, includes diode housing (1), its characterized in that, the lower tip fixed mounting of diode housing (1) has packaging substrate (2), the equal fixed mounting in the left and right sides of packaging substrate (2) has electrode pin (11), packaged chip (12) are installed to the upper end of packaging substrate (2), the inside fixed mounting of diode housing (1) has three (3) on heat dissipation layer, the lower tip fixed mounting of three (3) on heat dissipation layer has four (32) on heat dissipation layer, three (33) louvres have been seted up to the side end of four (32) on heat dissipation layer.

2. An integrated packaged diode according to claim 1, wherein the diode housing (1) inner wall composition comprises a first heat dissipation layer (14), a second shielding layer (15) and two first shielding layers (13), the two first shielding layers (13) are fixedly mounted below the second shielding layer (15), and the first heat dissipation layer (14) is located between the two first shielding layers (13).

3. The diode as claimed in claim 2, wherein a second heat dissipation layer (21) is fixedly mounted at the lower end of the package substrate (2), and a first heat dissipation hole (22) is formed at the side end of the second heat dissipation layer (21).

4. The diode as claimed in claim 3, wherein the heat dissipation layer III (3) has a second heat dissipation hole (31) at a lateral end thereof.

5. The diode of claim 4, wherein a heat dissipation layer five (34) is fixedly mounted at the lower end of the heat dissipation layer four (32), and a heat dissipation hole four (35) is formed at the side end of the heat dissipation layer five (34).

6. The integrated packaging diode of claim 5, wherein the heat dissipation layer five (34) is arc-shaped.