CN211455677U - Structure for accelerating heat dissipation speed of patch transistor - Google Patents
Structure for accelerating heat dissipation speed of patch transistor Download PDFInfo
- Publication number
- CN211455677U CN211455677U CN202020570627.1U CN202020570627U CN211455677U CN 211455677 U CN211455677 U CN 211455677U CN 202020570627 U CN202020570627 U CN 202020570627U CN 211455677 U CN211455677 U CN 211455677U
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- China
- Prior art keywords
- heat
- transistor
- metal
- paster
- patch
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- Expired - Fee Related
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 38
- 239000002184 metal Substances 0.000 claims abstract description 106
- 229910052751 metal Inorganic materials 0.000 claims abstract description 106
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 230000002349 favourable effect Effects 0.000 abstract description 3
- ZGHQUYZPMWMLBM-UHFFFAOYSA-N 1,2-dichloro-4-phenylbenzene Chemical compound C1=C(Cl)C(Cl)=CC=C1C1=CC=CC=C1 ZGHQUYZPMWMLBM-UHFFFAOYSA-N 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 206010053615 Thermal burn Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Abstract
The utility model relates to a transistor heat dissipation technical field especially relates to an accelerate structure of paster transistor department radiating rate, including PCB circuit board, paster transistor, first heat conduction gel piece and heat conduction metal, heat conduction metal and PCB circuit board fixed connection, the paster transistor be located between PCB circuit board and the heat conduction metal and with PCB circuit board fixed connection, first heat conduction gel piece be located between paster transistor and the heat conduction metal and closely laminate with the body of heat conduction metal and paster transistor respectively. The utility model discloses an accelerate paster transistor department radiating rate's structure can accelerate the thermal heat that the paster transistor produced and dispel, avoids the paster transistor to lead to the temperature rise to exceed the limit value and damage because of the produced thermal gathering of work, is favorable to the performance of full play paster transistor, makes paster transistor work in the preferred state.
Description
[ technical field ] A method for producing a semiconductor device
The utility model relates to a transistor heat dissipation technical field especially relates to an accelerate structure of paster transistor department radiating rate.
[ background of the invention ]
Because the patch transistor can generate heat due to electric energy loss while working, if the heat is not quickly dissipated, heat accumulation can be generated, so that the temperature of the patch transistor is sharply increased to exceed a limit value, and the damage of the patch transistor is caused. The chip transistor has good electrical performance due to the characteristics of the packaging process, but the smaller heat dissipation surface of the chip transistor brings great challenges to the thermal design of the product, so how to accelerate the heat dissipation speed of the chip transistor and improve the heat dissipation capability of the chip transistor is a key problem to be solved.
The heat dissipation method for common plastic package surface mounted transistors in the market is that a large amount of copper is required to be paved to occupy the substrate space and only be suitable for a non-sealed case in a mode of matching the copper foil on the surface of the substrate with the heat radiation of a tube body, a large amount of copper is required to be paved to occupy the substrate space and only be suitable for a sealed case with a surface heat dissipation function in a mode of matching the copper foil on the surface of the substrate with the tube body in a sealing heat conduction mode, a heat conduction piece is required to occupy the inner space in a large amount in a mode of additionally installing the heat conduction copper piece on the transistor and radiating heat to air, the heat dissipation on the surface of the transistor package is not ideal and only is suitable for the non-sealed space, and if the.
Thus, there is much room for improvement in the prior art.
[ Utility model ] content
In order to overcome the technical problem, the utility model provides a accelerate structure of paster transistor department radiating rate.
The utility model provides a technical problem's scheme provides an accelerate structure of paster transistor department radiating rate, including PCB circuit board, paster transistor, first heat conduction gel piece and heat conduction metal, heat conduction metal and PCB circuit board fixed connection, the paster transistor be located between PCB circuit board and the heat conduction metal and with PCB circuit board fixed connection, first heat conduction gel piece be located between paster transistor and the heat conduction metal and closely laminate with the body of heat conduction metal and paster transistor respectively.
Preferably, the structure for accelerating the heat dissipation speed at the patch transistor further comprises a metal shell, and the PCB is fixedly connected with the metal shell.
Preferably, the structure for increasing the heat dissipation speed at the patch transistor further comprises a second heat-conducting gel sheet, and the second heat-conducting gel sheet is located between the metal shell and the heat-conducting metal and is tightly attached to the heat-conducting metal and one surface of the metal shell respectively.
Preferably, the heat conducting metal is made of red copper.
Preferably, the outer side of the part of the metal shell close to the second heat-conducting gel sheet is in the shape of regularly arranged toothed sheets.
Preferably, the heat conducting metal is of a half-wrapped structure, the heat conducting metal comprises a flat panel and three fixing pin positions, the three fixing pin positions are respectively located on different sides of the flat panel, a mounting hole matched with the fixing pin positions is formed in the PCB, and the fixing pin positions are correspondingly welded in the mounting hole.
Preferably, the PCB circuit board and the metal shell are fixed by screw connection.
Compared with the prior art, the utility model discloses an accelerate structure of paster transistor department radiating rate has following advantage:
through closely laminating between heat conduction metal and paster transistor and set up first heat conduction gel piece, first heat conduction gel piece can be fast with the heat conduction metal of paster transistor body encapsulation gathering, avoids paster transistor body encapsulation high temperature.
The pad position of the paster transistor on the PCB circuit board is fixed with the heat conducting metal through welding, and the heat conducting metal with the paster transistor core can be quickly conducted, and the heat conducting property of the heat conducting metal is matched, so that the heat generated by the paster transistor can be quickly led out, the paster transistor is ensured to work at a proper temperature, and the performance of the paster transistor is favorably and fully exerted.
Due to the fact that the metal has good heat conductivity, heat conducted to the heat conducting metal can be rapidly conducted out when being dissipated to the metal shell, and the heat dissipating speed is accelerated.
The setting of second heat conduction gel piece for heat conduction metal can be more rapidly with the heat dissipation to the outside air in, has increased the radiating speed of paster transistor, is favorable to full play paster transistor's performance, through the heat dissipation of solid comparatively suitable seal space and the transistor in non-seal space and can not produce the noise and need not to set up great heat dissipation space in inside and be unfavorable for the miniaturization of whole volume.
[ description of the drawings ]
Fig. 1 is a schematic view of a cross-section structure of the structure for increasing the heat dissipation rate of the patch transistor.
Fig. 2 is the utility model discloses accelerate the heat conduction metal's of paster transistor department radiating rate's structure spatial structure schematic diagram.
Description of reference numerals:
10. a structure for accelerating the heat dissipation speed at the patch transistor; 11. a metal housing; 12. a PCB circuit board; 13. a patch transistor; 14. a first thermally conductive gel sheet; 15. a thermally conductive metal; 151. a flat plate; 152. fixing the pin position; 16. a second thermally conductive gel sheet.
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail with reference to the accompanying drawings and the following embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the invention.
Referring to fig. 1-2, the present invention provides a structure 10 for increasing the heat dissipation rate of a chip transistor, for increasing the heat dissipation rate of the chip transistor to reduce the possibility of damage to the chip transistor due to temperature rise exceeding the limit, which includes a metal casing 11, a PCB 12, the chip transistor 13, a first thermal conductive gel sheet 14 and a thermal conductive metal 15, wherein the metal casing 11 is fixedly connected to the PCB 12, the chip transistor 13 is located between the PCB 12 and the thermal conductive metal 15, the thermal conductive metal 15 and the chip transistor 13 are respectively fixedly connected to the PCB 12, the first thermal conductive gel sheet 14 is located between the thermal conductive metal 15 and the chip transistor 13 and respectively tightly attached to the bodies of the thermal conductive metal 15 and the chip transistor 13, the core thermal conductive electrode and other pins of the chip transistor 13 are electrically connected to the PCB 12, the heat conducting metal 15 is electrically connected to the PCB 12, and the heat conducting metal 15 is electrically connected to the core heat conducting electrode of the patch transistor 13. Preferably, the PCB circuit board 12 and the metal housing 11 are fixed by screw connection.
The heat conducting metal 15 is used for conducting heat generated by the patch transistor 13 out to accelerate the heat dissipation at the patch transistor 13 and stabilize the connection between the patch transistor 13 and the PCB 12, and specifically, the heat conducting metal 15 is in a half-wrapped structure, the heat conducting metal 15 includes a planar plate 151 and three fixing pins 152, the three fixing pins 152 are respectively located on different side surfaces of the planar plate 151, a mounting hole (not shown) matched with the three fixing pins 152 is formed on the PCB 12, the mounting hole is electrically connected with a pad of a core heat conducting electrode of the patch transistor 13, the fixing pins 152 are correspondingly welded in the mounting hole to realize the fixed connection between the PCB 12 and the heat conducting metal 15, the core heat conducting electrode of the patch transistor 13 is fixedly connected with the heat conducting metal 15 through copper laying on the PCB 12, so that heat generated by the core of the patch transistor 13 can be quickly conducted to the heat conducting metal 15, the heat is dissipated through the heat conducting metal 15, the first heat conducting gel sheet 14 is used for accelerating the heat conduction at the tube body of the patch transistor 13, so as to avoid the heat from gathering at the tube body of the patch transistor 13 to increase the temperature of the tube body of the patch transistor 13, and because the first heat conducting gel sheet 14 is tightly attached to the tube body of the patch transistor 13 and the plane plate 151 of the heat conducting metal 15 respectively, the heat generated at the tube body of the patch transistor 13 can be quickly conducted to the heat conducting metal 15, the heat is dissipated through the heat conducting metal 15, and because the heat conducting metal 15 is made of metal, the heat conducting performance is better, and the heat can be quickly conducted out. Preferably, the heat conducting metal 15 is made of red copper, that is, the heat conducting metal 15 is made of a whole piece of red copper plate, so that the heat conducting metal is not easy to rust off and has a lower price than silver and gold while the heat conducting metal has better heat conductivity, and the high performance-price ratio is also beneficial to batch production.
The metal shell 11 is made of metal, so that the heat inside the metal shell can be quickly conducted to the outside, and the heat can be quickly dissipated.
Further, the structure 10 for increasing the heat dissipation speed at the patch transistor further includes a second thermal conductive gel sheet 16, the second thermal conductive gel sheet 16 is located between the thermal conductive metal 15 and the metal housing 11 and is tightly attached to the planar plate 151 of the thermal conductive metal 15 and the inner side surface of the metal housing 11, and the second thermal conductive gel sheet 16 is used for rapidly transferring the heat at the thermal conductive metal 15 to the metal housing 11 to further increase the heat dissipation speed of the patch transistor 13, thereby facilitating the temperature maintenance of the patch transistor 13 at a better temperature and avoiding the damage of the patch transistor 13 due to the temperature rise exceeding a limit value.
Further, the outer side of the portion of the metal shell 11 close to the second heat conductive gel sheet 16 is in the shape of regularly arranged teeth, that is, the outer side of the portion of the metal shell 11 close to the second heat conductive gel sheet 16 is in a heat dissipation fin structure, so that the heat dissipation capability of the metal shell 11 is increased by the heat dissipation fin structure, besides the metal shell 11 itself being a material with fast heat dissipation, which is beneficial to quickly dissipating heat conducted to the metal shell 11 by the second heat conductive gel sheet 16, and is also beneficial to preventing the heat at the metal shell 11 from being overheated and causing scald to a user.
When the patch transistor 13 works, the heat generated by the patch transistor is dissipated outwards, the heat is dissipated through the first heat conductive gel sheet 14, the heat conductive metal 15, the second heat conductive gel sheet 16 and the metal shell 11, and since the first heat conductive gel sheet 14, the heat conductive metal 15, the second heat conductive gel sheet 16 and the metal shell 11 are good heat conductors and since the first heat conductive gel sheet 14 is tightly attached to the body of the patch transistor 13, the planar plate 151 of the heat conductive metal 15 and the second heat conductive gel sheet 16 is tightly attached to the planar plate 151 of the heat conductive metal 15 and the plane of the metal shell 11, the heat is mainly dissipated through solid-to-solid conduction, which is beneficial to greatly improving the heat dissipation speed at the patch transistor 13 and maintaining the working performance of the patch transistor 13 in a better state.
Compared with the prior art, the utility model discloses an accelerate paster transistor radiating rate's structure has following advantage:
through closely laminating between heat conduction metal and paster transistor and set up first heat conduction gel piece, first heat conduction gel piece can be fast with the heat conduction metal of paster transistor body encapsulation gathering, avoids paster transistor body encapsulation high temperature.
The pad position of the paster transistor on the PCB circuit board is fixed with the heat conducting metal through welding, and the heat conducting metal with the paster transistor core can be quickly conducted, and the heat conducting property of the heat conducting metal is matched, so that the heat generated by the paster transistor can be quickly led out, the paster transistor is ensured to work at a proper temperature, and the performance of the paster transistor is favorably and fully exerted.
Due to the fact that the metal has good heat conductivity, heat conducted to the heat conducting metal can be rapidly conducted out when being dissipated to the metal shell, and the heat dissipating speed is accelerated.
The setting of second heat conduction gel piece for heat conduction metal can be more rapidly with the heat dissipation to the outside air in, has increased the radiating speed of paster transistor, is favorable to full play paster transistor's performance, through the heat dissipation of solid comparatively suitable seal space and the transistor in non-seal space and can not produce the noise and need not to set up great heat dissipation space in inside and be unfavorable for the miniaturization of whole volume.
The above description is only for the preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications made within the spirit of the present invention, equivalent replacements and improvements should be included in the scope of the present invention.
Claims (7)
1. The utility model provides a accelerate structure of radiating rate of paster transistor department which characterized in that: the structure for accelerating the radiating speed of the patch transistor comprises a PCB (printed circuit board), the patch transistor, a first heat-conducting gel sheet and heat-conducting metal, wherein the heat-conducting metal is fixedly connected with the PCB, the patch transistor is positioned between the PCB and the heat-conducting metal and is fixedly connected with the PCB, and the first heat-conducting gel sheet is positioned between the patch transistor and the heat-conducting metal and is tightly attached to the heat-conducting metal and a tube body of the patch transistor respectively.
2. The structure for increasing the heat dissipation rate at a patch transistor according to claim 1, wherein: the structure for accelerating the heat dissipation speed of the patch transistor further comprises a metal shell, and the PCB is fixedly connected with the metal shell.
3. The structure for increasing the heat dissipation rate at a patch transistor according to claim 2, wherein: the structure for accelerating the heat dissipation speed of the patch transistor further comprises a second heat-conducting gel sheet, wherein the second heat-conducting gel sheet is located between the metal shell and the heat-conducting metal and is tightly attached to the heat-conducting metal and one surface of the metal shell respectively.
4. The structure for increasing the heat dissipation rate at a patch transistor according to claim 1, wherein: the heat conducting metal is made of red copper.
5. The structure for increasing the heat dissipation rate at a patch transistor according to claim 3, wherein: the outer side of the part of the metal shell close to the second heat-conducting gel sheet is in the shape of regularly arranged tooth sheets.
6. The structure for increasing the heat dissipation rate at a patch transistor according to claim 1, wherein: the heat conduction metal is half a packet structure, the heat conduction metal includes a panel and three fixed pin position, and is three the fixed pin position is located the different side at the panel respectively, set up on the PCB circuit board with fixed pin position assorted mounting hole, fixed pin position corresponds to weld in the mounting hole.
7. The structure for increasing the heat dissipation rate at a patch transistor according to claim 2, wherein: the PCB circuit board is fixedly connected with the metal shell through threads.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020570627.1U CN211455677U (en) | 2020-04-16 | 2020-04-16 | Structure for accelerating heat dissipation speed of patch transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020570627.1U CN211455677U (en) | 2020-04-16 | 2020-04-16 | Structure for accelerating heat dissipation speed of patch transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211455677U true CN211455677U (en) | 2020-09-08 |
Family
ID=72302022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020570627.1U Expired - Fee Related CN211455677U (en) | 2020-04-16 | 2020-04-16 | Structure for accelerating heat dissipation speed of patch transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211455677U (en) |
-
2020
- 2020-04-16 CN CN202020570627.1U patent/CN211455677U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200908 |