CN201397814Y - Radiating structure of chip type high-power element - Google Patents
Radiating structure of chip type high-power element Download PDFInfo
- Publication number
- CN201397814Y CN201397814Y CN 200920127292 CN200920127292U CN201397814Y CN 201397814 Y CN201397814 Y CN 201397814Y CN 200920127292 CN200920127292 CN 200920127292 CN 200920127292 U CN200920127292 U CN 200920127292U CN 201397814 Y CN201397814 Y CN 201397814Y
- Authority
- CN
- China
- Prior art keywords
- heat
- circuit board
- heat conduction
- heating panel
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052802 copper Inorganic materials 0.000 claims abstract description 50
- 239000010949 copper Substances 0.000 claims abstract description 50
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 27
- 238000003466 welding Methods 0.000 claims abstract description 19
- 238000005538 encapsulation Methods 0.000 claims abstract description 4
- 239000004411 aluminium Substances 0.000 claims description 24
- 238000009434 installation Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012774 insulation material Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- NHYCGSASNAIGLD-UHFFFAOYSA-N Chlorine monoxide Chemical compound Cl[O] NHYCGSASNAIGLD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- -1 potteries) structure Chemical compound 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The utility model provides a radiating structure of chip type high-power element for conducting heat energy generated by high-power elements. The radiating structure comprises a heat conduction copperblock which has the same thickness as that of a circuit board, and is embedded in the circuit board, an aluminum-based heating panel whose one side is plated with a copper welding plate, and other side is connected with a radiating shell, and a radiating shell which can emit heat energy in air through the natural convection mode. High-power elements adopt the chip encapsulation mode, and are welded with the front side of the heat conduction copper block embedded on the circuit board. The aluminum-based heating panel is welded with the back side of the heat conduction copper block embedded onthe circuit board. The radiating structure adopts a passage way stretching from the high-power elements, the heat conductance copper block and the radiating shell to air radiation, effectively reducesthe working temperature of the high-power elements, keeps the working temperature of the high-power element within the rated range, satisfies the technical requirements of vehicle-mounted electronicdevices, and has the advantages of excellent head radiation, simple structure and low cost.
Description
Technical field
The utility model relates to the radiator structure that surface mounting high-power element is installed on the circuit board, is specifically related to a kind of heat abstractor of surface mounting high-power element.
Background technology
Along with the continuous development of automobile electronics, the motor control unit of high-power, miniaturization and lightness is a developing direction.Amplify and come drive motors because existing a lot of motor drive ics carry out electric current by high power transistor, and the fin area of single high-power crystal die and limited in one's ability, must be aided with radiator structure and eliminate heat too much on the chip and rapidly heat being discharged, to prolong the useful life of high-power crystal die.Thereby, on the automobile electrically-controlled product of producing in batches, more high power transistor product has used the paster packing forms, and the high-power components of paster encapsulation how with the circuit board welding of nonmetallic materials, and to conduct heat on the fin of circuit board back be a difficult problem.
The type of existing high-power components radiator structure is more, normally some through holes and metallization are played in the position of bonding power pipe on circuit board, fill up with scolding tin then, because these have the capacity of heat transmission of a lot of through holes that scolding tin fills up more much better than the insulation board base heat conductivility of circuit board, so can play the effect of transistorized heat being led the circuit board back, and then the reverse side of circuit board is pressed on the metal fin dispels the heat.The heat dissipating method of general this use surface mounting high-power element is to install like this; referring to Fig. 1: with design on the position of the needs heat radiation of circuit board 3 soldering surface mounted formula high-power components 1 and process a lot of plated-through holes 2; in welding, these plated-through holes are filled up by scolding tin; when being installed, external heating panel 5 also between cushioning one deck heat-conducting insulation material 4 between circuit board 3 and the heating panel 5 is with assurance circuit board and heating panel, insulate; in order to allow high-power components 1 rapid heat dissipation; usually also circuit board 3 and heating panel 5 to be used screws clamp; perhaps use other ways that circuit board 3 and heating panel 5 are compressed; to reach radiating effect; but these plated-through hole heat-conducting areas are much smaller than the welding area of dissipation of high-power components itself; do not have moment with the quick ability that derives of the inner high heat that produces of high-power components; little and add that the conductive coefficient of the heat-conducting insulation material 4 of liner between circuit board reverse side and fin is not very high because of the cross-sectional area of the plated-through hole 2 on circuit board of gathering, the therefore this radiator structure that directly high-power surface mount elements is welded on the circuit board is restricted in actual applications.
The utility model content
At the prior art above shortcomings, it is strong that the purpose of this utility model provides a kind of not only heat-sinking capability, and the radiator structure of surface mounting high-power element simple in structure, that manufacturing cost is lower.
The purpose of this utility model is achieved in that the radiator structure of surface mounting high-power element, is used for the heat that the conduction and high power element gives out, and it is characterized in that, comprising:
-circuit board, the radiating surface of high-power components directly weld with the front that is embedded in the heat conduction copper billet in the circuit board;
-heat conduction copper billet, heat conduction copper billet be embedded in the circuit board and thickness the same with circuit board, the heat conduction copper billet has good heat conductivility;
-heating panel, the one side of heating panel and the reverse side welding that is embedded in heat conduction copper billet in the circuit board, another side connects heat-dissipating casing;
-heat-dissipating casing is used for heat is distributed in the air.
Further feature, described high-power components adopts the form of paster encapsulation.
The installation of described high-power components be by welding be embedded in circuit board on the front of heat conduction copper billet be connected.
Be coated with copper pad on heating panel, heating panel is by copper pad and the reverse side welding that is embedded in heat conduction copper billet on the circuit board.
Compared to existing technology, the utlity model has following advantage:
Owing on circuit board, inlay (among Fig. 2) heat conduction copper billet 7, (among Fig. 1) plated-through hole 2 that replaces prior art, the long-pending plated-through hole 2 in Fig. 1 of the heat-conducting section of heat conduction copper billet 7, so the heat of high-power components 1 just can be transmitted to the reverse side of circuit board 3 fast, be delivered to heat-dissipating casing 6 through aluminium base heating panel 5 again, heat conducted in the air by heat-dissipating casing 6.In the utility model, heat conduction copper billet 7 is directly to be welded on the aluminium base heating panel 5 by the copper pad 8 above the aluminium base heating panel 5 with welding method, and there is one deck chlorine monoxid insulating barrier on aluminium base heating panel 5 surfaces, copper pad 8 is tightly to be attached to the oxide isolated laminar surface of aluminium base heating panel 5 and to insulate with aluminium base by special processing, so just save the heat-conducting insulation material 4 among Fig. 1, also further reduced thermal resistance, be transmitted to purpose on the heat-radiating aluminum plate fast thereby reached the heat that will be in the high-power components 1 produces, thereby solved the problem of the quick heat radiating of high-power components.And structure is simpler, and manufacturing cost is lower.
The utility model adopts from high-power components-heat conduction copper billet-with the path of aluminium base heating panel-fin-air heat radiation of copper pad, effectively reduce the working temperature of high-power components, it is following that the high-power components working temperature is remained in the specified scope, satisfied the specification requirement of vehicle electronic device.
Description of drawings
Fig. 1 is the structural representation of existing high-power components thermal component;
Fig. 2 is the structural representation of the radiator structure of the utility model surface mounting high-power element.
Embodiment
Embodiment 1: referring to Fig. 2, a kind of radiator structure of surface mounting high-power element is used for the heat that the conduction and high power element gives out, and comprising: circuit board, the radiating surface of high-power components 1 directly are welded on the front of the circuit board 3 that is inlaid with heat conduction copper billet 7; Heat conduction copper billet 7 be embedded in the circuit board 3 and thickness identical with circuit board 3, heat conduction copper billet 7 has good heat conductivility; The one side welding heat conduction copper billet 7 of heating panel 5, another side connects heat-dissipating casing 6; Heat-dissipating casing 6 is used for heat is conducted in the air.
The utility model is to fix a heat conduction copper billet 7 with the circuit board same thickness on the position of needs heat radiations of soldering surface mounted formula high-power components 1 in circuit board 3, and in board production, heat conduction copper billet 7 and circuit board 3 are set into one, in welding, high-power components 1 and heat conduction copper billet 7 are welded together, then a volume and the bigger heating panel 5 of area are welded on the another side of heat conduction copper billet 7 by scolding tin.
Described heating panel 5 adopts aluminium bases (the perhaps material of other good heat conductivity, such as materials such as copper, potteries) structure, aluminium base has perfect heat-dissipating, price is relatively low, manufacturing process is ripe, the advantage easily of drawing materials, thereby is applied in a large number in the radiator structure of power circuit.
Embodiment 2: as shown in Figure 2, be on the basis of embodiment 1, be coated with copper pad 8 on aluminium base heating panel 5, aluminium base heating panel 5 is by the reverse side welding of copper pad 8 with heat conduction copper billet 7.
Principle of the present utility model is: the heat that surface mounting high-power element 1 sends, directly pass to aluminium base heating panel 5 successively by the heat conduction copper billet 7 that is embedded in the circuit board 3, pass on the fin 6 of entire circuit through radiator aluminium base 5 again, the mode of surface mounting high-power element 1 by welding directly be embedded in circuit board 3 in heat conduction copper billet 7 be connected, heat conduction copper billet 7 is integrated by copper pad 8 welding with aluminium base heating panel 5, because the area of dissipation of aluminium base heating panel 5 is much larger than surface mounting high-power element 1, so it is just much smaller that aluminium base heating panel 5 is fixed on its thermal resistance of entire circuit shell, thereby just improved the efficient of heat transferred greatly.Not only the capacity of heat transmission is strong as heat carrier with the heat conduction copper billet, and easy to process, and manufacturing cost is lower.
The comparison of the capacity of heat transmission:
Thermal conductivity has two important parameters when calculating: thermal resistance and conductive coefficient.
Conductive coefficient is the thermal conduction characteristic of certain material, at shape size requirement is arranged;
Thermal resistance is at a certain fixed system, and strict size, thickness requirement are arranged, if change any part or size change, the thermal resistance of whole system all can change, corresponding to certain material, if overall dimension changes, thermal resistance also is different.
The homogenous material thermal resistance can be calculated by conductive coefficient and shape size.
Therefore, a kind of capacity of heat transmission of radiator structure will could clearly be represented by the calculating of system's thermal resistance.
The thermal source unanimity of this second mate figure can so be thought, the radiating mode capacity of heat transmission of system's thermal resistance minimum is just better.
The heat sink conception of Fig. 1:
R1 is the internal thermal resistance of MOSFET.It is a steady state value, often encapsulates to make when finishing at chip and has determined.Be about 1 ℃/W.
R2 is tin filling post (Sn63Pb37) thermal resistance in the aperture.The scolding tin conductive coefficient is 50W/m*K, totally 37 through holes, single hole sectional area 0.2mm
2, thickness 2mm.Expire if fill, single thermal resistance is 80 ℃/W, and total equivalent thermal resistance is 2.16 ℃/W.
R3 is a PCB substrate thermal resistance, and when material was FR4, conductive coefficient was generally 0.2W/m*K, and through hole is removed in the copper billet zone under the power chip, and the epoxy resin sectional area is 42.84mm altogether
2Its thermal resistance minimum is 233.4 ℃/W, and it is in parallel with the tin filling post, so it is little to the heat-sinking capability influence.
R4 is the heat conducting film thermal resistance, is 0.4 ℃/W.
R5 is the aluminium sheet thermal conductance, and area is 50.24mm
2, thickness 2mm.Conductive coefficient is 0.18 ℃/W.
R6 is an aluminium shell thermal resistance, supposes the shell unanimity, the thermal resistance unanimity of two kinds of comparative structures.
The heat sink conception of Fig. 2:
R1 is the internal thermal resistance of MOSFET.It is a steady state value, often encapsulates to make when finishing at chip and has determined.Be about 1 ℃/W.
R7 is the copper billet thermal resistance, sectional area 50.24mm
2, conductive coefficient 407W/m*K, the thermal resistance size is 0.01 ℃/W.
R8 is an aluminium base pad thermal resistance, has one deck Copper Foil and one deck zinc-plated on the pad, and zinc-plated and weld does not temporarily include, and copper thickness is generally 35 μ m, and the thermal resistance size is 0.000165 ℃/W, can ignore.
One deck layer Al that become attached to arranged between R5 and the R8
2O
396% aluminium oxide conductive coefficient is 30W/m*K, and 99% aluminium oxide conductive coefficient is 35W/m*K, calculates with lower 96% aluminium oxide here, calculate with R8 identical because thickness at 75 μ m between 155 μ m, be 0.1 ℃/W to the maximum.
R5 is an aluminium base, and area is 50.24mm
2, thickness 2mm.Conductive coefficient is 0.18 ℃/W.
R6 is an aluminium shell thermal resistance, supposes the shell unanimity, the thermal resistance unanimity of two kinds of comparative structures.
Equivalent thermal resistance except aluminium shell and chip internal thermal resistance and heat sink conception 1 is 2.74 ℃/W, and the equivalent thermal resistance of heat sink conception 2 is 0.29 ℃/W.Both differ 9.45 times.Calculate low 25 ℃ of the temperature rise of improved scheme 2 with the general dissipation power 10W of power chip commonly used.
The two identical welding portion is (1) and (2), between (1) and (7), supposes that welding procedure is identical, the thermal resistance unanimity.The utility model is not owing to use dielectric film, aluminium base also is to fit by welding and heat conduction copper billet, belonging to surface molecular merges, the contact-making surface gap is considerably less, the dielectric film that adopts with prior art (Fig. 1) compresses mode and (is confined to compress, still the surface of different materials contact) compare, contact heat resistance is lower; Moreover because prior art is used intensive through hole, because effect of surface tension, it is the comparison difficulty that whole holes will fully be filled up in the practical operation.When the power chip dissipation power was 10W in the reality, the utility model temperature after the improvement was than low 10 ℃ at least of prior aries (Fig. 1).
Claims (5)
1, the radiator structure of surface mounting high-power element is used for the heat that conduction and high power element (1) gives out, and it is characterized in that, comprising:
-circuit board (3), the radiating surface of high-power components (1) directly weld with the front that is embedded in the heat conduction copper billet (7) in the circuit board (3);
-heat conduction copper billet (7), heat conduction copper billet (7) be embedded in the circuit board (3) and thickness the same with circuit board (3), heat conduction copper billet (7) has good heat conductivility;
-heating panel (5), the one side of heating panel (5) and the reverse side welding that is embedded in heat conduction copper billet (7) in the circuit board (3), another side connects heat-dissipating casing (6);
-heat-dissipating casing (6) is used for heat is distributed in the air.
2, the radiator structure of surface mounting high-power element according to claim 1 is characterized in that, described high-power components (1) adopts the form of paster encapsulation.
3, the radiator structure of surface mounting high-power element according to claim 1 is characterized in that, the installation of described high-power components (1) is to be connected with the front of heat conduction copper billet (7) by welding.
4, the radiator structure of surface mounting high-power element according to claim 1 is characterized in that, is coated with copper pad (8) on heating panel (5), and heating panel (5) is by the reverse side welding of copper pad (8) with heat conduction copper billet (7).
5, the radiator structure of surface mounting high-power element according to claim 1 is characterized in that, described heating panel (5) adopts aluminium base cooling plate structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920127292 CN201397814Y (en) | 2009-05-13 | 2009-05-13 | Radiating structure of chip type high-power element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920127292 CN201397814Y (en) | 2009-05-13 | 2009-05-13 | Radiating structure of chip type high-power element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201397814Y true CN201397814Y (en) | 2010-02-03 |
Family
ID=41620341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200920127292 Expired - Lifetime CN201397814Y (en) | 2009-05-13 | 2009-05-13 | Radiating structure of chip type high-power element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201397814Y (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101556941B (en) * | 2009-05-13 | 2011-09-07 | 重庆三祥汽车电控系统有限公司 | Heat radiation structure of surface mounting high-power element |
| CN109565929A (en) * | 2018-10-31 | 2019-04-02 | 北京比特大陆科技有限公司 | Radiator, circuit board and calculating equipment |
| CN110392481A (en) * | 2019-08-28 | 2019-10-29 | 上海创功通讯技术有限公司 | Printed circuit-board assembly and electronic equipment |
| CN111478644A (en) * | 2020-04-10 | 2020-07-31 | 谢渊斌 | Motor controller |
| US11495513B2 (en) | 2019-03-29 | 2022-11-08 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Component carrier with embedded semiconductor component and embedded highly-conductive block which are mutually coupled |
| US12245377B2 (en) | 2019-03-29 | 2025-03-04 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Component carrier with embedded semiconductor component and embedded highly-conductive block which are mutually coupled |
-
2009
- 2009-05-13 CN CN 200920127292 patent/CN201397814Y/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101556941B (en) * | 2009-05-13 | 2011-09-07 | 重庆三祥汽车电控系统有限公司 | Heat radiation structure of surface mounting high-power element |
| CN109565929A (en) * | 2018-10-31 | 2019-04-02 | 北京比特大陆科技有限公司 | Radiator, circuit board and calculating equipment |
| WO2020087389A1 (en) * | 2018-10-31 | 2020-05-07 | 北京比特大陆科技有限公司 | Radiator, circuit board and computing device |
| US11495513B2 (en) | 2019-03-29 | 2022-11-08 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Component carrier with embedded semiconductor component and embedded highly-conductive block which are mutually coupled |
| US12245377B2 (en) | 2019-03-29 | 2025-03-04 | At&S Austria Technologie & Systemtechnik Aktiengesellschaft | Component carrier with embedded semiconductor component and embedded highly-conductive block which are mutually coupled |
| CN110392481A (en) * | 2019-08-28 | 2019-10-29 | 上海创功通讯技术有限公司 | Printed circuit-board assembly and electronic equipment |
| CN111478644A (en) * | 2020-04-10 | 2020-07-31 | 谢渊斌 | Motor controller |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20100203 Effective date of abandoning: 20090513 |