CN218769495U - Packaging structure for improving reliability of SiC chip - Google Patents
Packaging structure for improving reliability of SiC chip Download PDFInfo
- Publication number
- CN218769495U CN218769495U CN202223430352.XU CN202223430352U CN218769495U CN 218769495 U CN218769495 U CN 218769495U CN 202223430352 U CN202223430352 U CN 202223430352U CN 218769495 U CN218769495 U CN 218769495U
- Authority
- CN
- China
- Prior art keywords
- sic
- reliability
- heat
- bottom plate
- top surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
本实用新型公开一种提高SiC芯片可靠性的封装结构,包括底板,所述底板顶面固定安装有外壳,所述外壳顶部固定安装有盖板,所述底板顶面设置有DBC基板,所述DBC基板表面设置有多个SiC芯片,所述外壳内侧设置有导热件,所述外壳外侧开设有多个散热槽,所述散热槽一侧开设有通孔,所述散热槽内部固定安装有散热件。本实用新型能够提升封装后的SiC芯片散热性能,防止因高温导致SiC芯片出现损坏,提升了芯片的可靠性。
The utility model discloses a packaging structure for improving the reliability of SiC chips, which comprises a base plate, a casing is fixedly installed on the top surface of the bottom plate, a cover plate is fixedly installed on the top of the casing, a DBC substrate is arranged on the top surface of the bottom plate, and the A plurality of SiC chips are arranged on the surface of the DBC substrate, a heat conduction member is arranged inside the casing, a plurality of cooling grooves are opened on the outside of the casing, a through hole is opened on one side of the cooling groove, and a heat dissipation device is fixedly installed inside the cooling groove. pieces. The utility model can improve the heat dissipation performance of the packaged SiC chip, prevent the SiC chip from being damaged due to high temperature, and improve the reliability of the chip.
Description
技术领域technical field
本实用新型涉及封装结构技术领域,具体为一种提高SiC芯片可靠性的封装结构。The utility model relates to the technical field of packaging structures, in particular to a packaging structure for improving the reliability of SiC chips.
背景技术Background technique
碳化硅(SiC)是第三代化合物半导体材料,可用于制作大功率电子器件,碳化硅在半导体中存在的主要形式是作为衬底材料。Silicon carbide (SiC) is a third-generation compound semiconductor material that can be used to make high-power electronic devices. The main form of silicon carbide in semiconductors is as a substrate material.
传统SiC功率器件封装技术是将SiC芯片下表面焊接在DBC基板上,并通过DBC基板与封装外壳之间的焊料层传导进行散热,然而仅通过SiC与DBC基板之间的焊料层进行导热,其散热传输效率较低,易导致SiC芯片高温出现故障,使得SiC芯片的可靠性降低。The traditional SiC power device packaging technology is to solder the lower surface of the SiC chip on the DBC substrate, and conduct heat dissipation through the solder layer between the DBC substrate and the package shell, but only through the solder layer between the SiC and the DBC substrate. The heat transfer efficiency is low, which can easily lead to high temperature failure of the SiC chip, which reduces the reliability of the SiC chip.
实用新型内容Utility model content
本实用新型的目的在于提供一种提高SiC芯片可靠性的封装结构,以解决上述背景技术提出的问题。The purpose of this utility model is to provide a packaging structure for improving the reliability of SiC chips, so as to solve the problems raised by the above-mentioned background technology.
为实现上述目的,本实用新型提供如下技术方案:一种提高SiC芯片可靠性的封装结构,包括底板,所述底板顶面固定安装有外壳,所述外壳顶部固定安装有盖板,所述底板顶面设置有DBC基板,所述DBC基板表面设置有多个SiC芯片,所述外壳内侧设置有导热件,所述外壳外侧开设有多个散热槽,所述散热槽一侧开设有通孔,所述散热槽内部固定安装有散热件。In order to achieve the above purpose, the utility model provides the following technical solutions: a packaging structure for improving the reliability of SiC chips, including a bottom plate, a casing is fixedly installed on the top surface of the bottom plate, a cover plate is fixedly installed on the top of the casing, and the bottom plate The top surface is provided with a DBC substrate, the surface of the DBC substrate is provided with a plurality of SiC chips, the inner side of the housing is provided with a heat conducting member, the outer side of the housing is provided with a plurality of cooling grooves, and a through hole is provided on one side of the cooling groove. A heat sink is fixedly installed inside the heat sink.
优选的,所述DBC基板通过焊接料固定在底板顶面,所述SiC芯片通过焊接料固定在DBC基板顶面。Preferably, the DBC substrate is fixed on the top surface of the bottom plate by solder, and the SiC chip is fixed on the top surface of the DBC substrate by solder.
优选的,所述导热件包括导热垫,所述导热垫一侧设置有连接部,所述连接部一侧与外壳内壁固定。Preferably, the heat conduction element includes a heat conduction pad, one side of the heat conduction pad is provided with a connection part, and one side of the connection part is fixed to the inner wall of the housing.
优选的,所述底板顶面固定安装有多个垫块,所述垫块与导热垫之间固定。Preferably, a plurality of pads are fixedly installed on the top surface of the bottom plate, and the pads are fixed with the heat conduction pad.
优选的,所述散热件具体为散热片,所述散热片共有多个,所述散热片固定安装在散热槽内部。Preferably, the heat dissipation element is specifically a heat dissipation fin, and there are a plurality of heat dissipation fins, and the heat dissipation fins are fixedly installed inside the heat dissipation groove.
与现有技术相比,本实用新型的有益效果是:Compared with the prior art, the beneficial effects of the utility model are:
1.该提高SiC芯片可靠性的封装结构,在SiC芯片工作时产生的高温由DBC基板传导至底板进行散热,并且一部分热能通过导热垫和连接部传导至外壳进行散热,经由多种散热途径,能够有效防止SiC芯片因高温导致的故障,提升SiC芯片的可靠性。1. The packaging structure that improves the reliability of the SiC chip, the high temperature generated during the operation of the SiC chip is conducted from the DBC substrate to the bottom plate for heat dissipation, and part of the heat energy is conducted to the shell through the thermal pad and the connection part for heat dissipation, through various heat dissipation methods, It can effectively prevent the failure of SiC chips caused by high temperature and improve the reliability of SiC chips.
2.该提高SiC芯片可靠性的封装结构,外壳的热能通过多个散热片快速散出,并且散热槽和通孔能够更加有利于散热片与空气接触,从而提升外壳的散热效率,提升整个封装结构的散热效率。2. The packaging structure that improves the reliability of the SiC chip, the heat energy of the shell is quickly dissipated through multiple heat sinks, and the heat sink and through holes can be more conducive to the contact between the heat sink and the air, thereby improving the heat dissipation efficiency of the shell and improving the entire package The cooling efficiency of the structure.
附图说明Description of drawings
图1为本实用新型整体结构示意图;Fig. 1 is a schematic diagram of the overall structure of the utility model;
图2为本实用新型外壳内部结构示意图;Fig. 2 is a schematic diagram of the internal structure of the utility model housing;
图3为本实用新型A放大结构示意图;Fig. 3 is the schematic diagram of enlarged structure of the utility model A;
图4为本实用新型B放大结构示意图。Fig. 4 is a schematic diagram of the enlarged structure of the utility model B.
图中:1、底板;2、外壳;3、盖板;4、DBC基板;5、SiC芯片;6、导热垫;7、散热片;8、垫块;9、连接部;10、散热槽;11、通孔。In the figure: 1. Bottom plate; 2. Shell; 3. Cover plate; 4. DBC substrate; 5. SiC chip; 6. Thermal pad; 7. Heat sink; 8. Pad; ; 11, through hole.
具体实施方式Detailed ways
下面将结合本实用新型实施例中的附图,对本实用新型实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本实用新型一部分实施例,而不是全部的实施例。基于本实用新型中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本实用新型保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. example. Based on the embodiments of the present utility model, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of the present utility model.
实施例一Embodiment one
请参照图1-4所示,本实用新型提供一种提高SiC芯片可靠性的封装结构,包括底板1,底板1顶面固定安装有外壳2,外壳2顶部固定安装有盖板3,底板1顶面设置有DBC基板4,DBC基板4表面设置有多个SiC芯片5,外壳2内侧设置有导热件,外壳2外侧开设有多个散热槽10,散热槽10一侧开设有通孔11,散热槽10内部固定安装有散热件。Please refer to Figures 1-4, the utility model provides a packaging structure to improve the reliability of SiC chips, including a
具体的,在SiC芯片5工作时产生的热由DBC基板4传导至底板1进行散热,并且一部分热能通过导热件传导至外壳2进行散热,外壳2的热能通过散热件快速导出,并且散热槽10和通孔11能够更加有利于散热件与空气接触,从而提升外壳2和SiC芯片5的散热效率。Specifically, the heat generated when the
其中:DBC基板4通过焊接料固定在底板1顶面,SiC芯片5通过焊接料固定在DBC基板4顶面,SiC芯片5与DBC基板4之间通过焊料导热,并且DBC基板4与底板1之间也通过焊料导热,能够起到散热效果。Among them: the
其中:导热件包括导热垫6,导热垫6一侧设置有连接部9,连接部9一侧与外壳2内壁固定,底板1顶面固定安装有多个垫块8,垫块8与导热垫6之间固定,封装时,将导热垫6置于多个SiC芯片5的表面,并将导热垫6固定于垫块8顶面,垫块8对导热垫6起到支撑效果,将连接部9与外壳2的内壁之间固定,有利于SiC芯片5与外壳2之间的导热效果。Among them: the heat conduction part includes a
其中:散热件具体为散热片7,散热片7共有多个,散热片7固定安装在散热槽10内部,散热片7通过与外部空气接触进行快速散热,相较于传统散热方式,散热效率提高较多。Among them: the heat sink is specifically the
工作原理:本实用新型为一种提高SiC芯片可靠性的封装结构,封装时,将导热垫6置于多个SiC芯片5的表面,并将导热垫6固定于垫块8顶面,垫块8对导热垫6起到支撑效果,将连接部9与外壳2的内壁之间固定;Working principle: the utility model is a packaging structure that improves the reliability of SiC chips. When packaging, the
在SiC芯片5工作时产生的热由DBC基板4传导至底板1进行散热,并且一部分热能通过导热垫6和连接部9传导至外壳2进行散热,外壳2的热能通过多个散热片7快速导出,并且散热槽10和通孔11能够更加有利于散热片7与空气接触,从而提升外壳2的散热效率,从而加快SiC芯片5的散热效率,防止SiC芯片5因高温出现故障甚至损毁,提升了SiC芯片的可靠性。The heat generated during the operation of the
本说明中未作详细描述的内容属于本领域专业技术人员公知的现有技术。The content not described in detail in this description belongs to the prior art known to those skilled in the art.
尽管参照前述实施例对本实用新型进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换,凡在本实用新型的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本实用新型的保护范围之内。Although the utility model has been described in detail with reference to the aforementioned embodiments, those skilled in the art can modify the technical solutions described in the aforementioned embodiments, or perform equivalent replacements for some of the technical features. Within the spirit and principles of the utility model, any modification, equivalent replacement, improvement, etc., should be included in the protection scope of the utility model.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223430352.XU CN218769495U (en) | 2022-12-21 | 2022-12-21 | Packaging structure for improving reliability of SiC chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223430352.XU CN218769495U (en) | 2022-12-21 | 2022-12-21 | Packaging structure for improving reliability of SiC chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218769495U true CN218769495U (en) | 2023-03-28 |
Family
ID=85683603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202223430352.XU Expired - Fee Related CN218769495U (en) | 2022-12-21 | 2022-12-21 | Packaging structure for improving reliability of SiC chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218769495U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117096122A (en) * | 2023-10-19 | 2023-11-21 | 广东仁懋电子有限公司 | A new energy storage silicon carbide power device and its packaging structure |
-
2022
- 2022-12-21 CN CN202223430352.XU patent/CN218769495U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117096122A (en) * | 2023-10-19 | 2023-11-21 | 广东仁懋电子有限公司 | A new energy storage silicon carbide power device and its packaging structure |
| CN117096122B (en) * | 2023-10-19 | 2024-01-09 | 广东仁懋电子有限公司 | New energy storage silicon carbide power device and packaging structure thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100543974C (en) | Heat dissipation module and manufacturing method thereof | |
| CN102683302A (en) | A heat dissipation structure for single-chip packaging and system-in-package | |
| CN112103250A (en) | Floating shock-absorbing heat dissipation type semiconductor packaging structure | |
| CN205428902U (en) | Soaking board radiating basal plate power modular structure | |
| US20110056670A1 (en) | Heat sink | |
| CN218769495U (en) | Packaging structure for improving reliability of SiC chip | |
| CN109616452A (en) | A heat dissipation assembly, a corresponding heat dissipation device and a corresponding circuit board | |
| CN107507811B (en) | Chip heat dissipation cooling device for cooling and coupling flat plate heat tube bundle with semiconductor | |
| CN211788977U (en) | Packaging structure of semiconductor devices | |
| TWM597424U (en) | Radiator | |
| TWI447974B (en) | LED package structure | |
| CN213583756U (en) | An electronic chip packaging structure | |
| CN203071056U (en) | Heat radiation mechanism for power module | |
| KR200400943Y1 (en) | Heat sink | |
| TWI763569B (en) | Electronic device | |
| CN221841826U (en) | A self-heat dissipation support and a chip packaging structure having the same | |
| CN219108061U (en) | Synchronous heat radiation structure of printed circuit board and chip package | |
| CN213304111U (en) | A heat-dissipating semiconductor package structure | |
| CN222939917U (en) | Air-cooled radiator | |
| CN206250183U (en) | A kind of radiating enhanced integrated circuit packaging structure | |
| CN223987380U (en) | An integrated circuit wafer with a reinforced packaging structure | |
| CN211125630U (en) | A high back voltage transistor | |
| CN114725041B (en) | A heat dissipation and packaging structure for an IGBT module near a hotspot | |
| CN223066162U (en) | Integrated circuit packaging shell | |
| CN221262369U (en) | Signal processor chip packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20230328 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
