CN218769495U - Packaging structure for improving reliability of SiC chip - Google Patents

Packaging structure for improving reliability of SiC chip Download PDF

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CN218769495U
CN218769495U CN202223430352.XU CN202223430352U CN218769495U CN 218769495 U CN218769495 U CN 218769495U CN 202223430352 U CN202223430352 U CN 202223430352U CN 218769495 U CN218769495 U CN 218769495U
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sic
reliability
heat
bottom plate
top surface
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李翔
吴文杰
刘毅
肖延兵
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Xinzhongxiang Chengdu Microelectronics Co ltd
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Abstract

本实用新型公开一种提高SiC芯片可靠性的封装结构,包括底板,所述底板顶面固定安装有外壳,所述外壳顶部固定安装有盖板,所述底板顶面设置有DBC基板,所述DBC基板表面设置有多个SiC芯片,所述外壳内侧设置有导热件,所述外壳外侧开设有多个散热槽,所述散热槽一侧开设有通孔,所述散热槽内部固定安装有散热件。本实用新型能够提升封装后的SiC芯片散热性能,防止因高温导致SiC芯片出现损坏,提升了芯片的可靠性。

Figure 202223430352

The utility model discloses a packaging structure for improving the reliability of SiC chips, which comprises a base plate, a casing is fixedly installed on the top surface of the bottom plate, a cover plate is fixedly installed on the top of the casing, a DBC substrate is arranged on the top surface of the bottom plate, and the A plurality of SiC chips are arranged on the surface of the DBC substrate, a heat conduction member is arranged inside the casing, a plurality of cooling grooves are opened on the outside of the casing, a through hole is opened on one side of the cooling groove, and a heat dissipation device is fixedly installed inside the cooling groove. pieces. The utility model can improve the heat dissipation performance of the packaged SiC chip, prevent the SiC chip from being damaged due to high temperature, and improve the reliability of the chip.

Figure 202223430352

Description

一种提高SiC芯片可靠性的封装结构A packaging structure to improve the reliability of SiC chips

技术领域technical field

本实用新型涉及封装结构技术领域,具体为一种提高SiC芯片可靠性的封装结构。The utility model relates to the technical field of packaging structures, in particular to a packaging structure for improving the reliability of SiC chips.

背景技术Background technique

碳化硅(SiC)是第三代化合物半导体材料,可用于制作大功率电子器件,碳化硅在半导体中存在的主要形式是作为衬底材料。Silicon carbide (SiC) is a third-generation compound semiconductor material that can be used to make high-power electronic devices. The main form of silicon carbide in semiconductors is as a substrate material.

传统SiC功率器件封装技术是将SiC芯片下表面焊接在DBC基板上,并通过DBC基板与封装外壳之间的焊料层传导进行散热,然而仅通过SiC与DBC基板之间的焊料层进行导热,其散热传输效率较低,易导致SiC芯片高温出现故障,使得SiC芯片的可靠性降低。The traditional SiC power device packaging technology is to solder the lower surface of the SiC chip on the DBC substrate, and conduct heat dissipation through the solder layer between the DBC substrate and the package shell, but only through the solder layer between the SiC and the DBC substrate. The heat transfer efficiency is low, which can easily lead to high temperature failure of the SiC chip, which reduces the reliability of the SiC chip.

实用新型内容Utility model content

本实用新型的目的在于提供一种提高SiC芯片可靠性的封装结构,以解决上述背景技术提出的问题。The purpose of this utility model is to provide a packaging structure for improving the reliability of SiC chips, so as to solve the problems raised by the above-mentioned background technology.

为实现上述目的,本实用新型提供如下技术方案:一种提高SiC芯片可靠性的封装结构,包括底板,所述底板顶面固定安装有外壳,所述外壳顶部固定安装有盖板,所述底板顶面设置有DBC基板,所述DBC基板表面设置有多个SiC芯片,所述外壳内侧设置有导热件,所述外壳外侧开设有多个散热槽,所述散热槽一侧开设有通孔,所述散热槽内部固定安装有散热件。In order to achieve the above purpose, the utility model provides the following technical solutions: a packaging structure for improving the reliability of SiC chips, including a bottom plate, a casing is fixedly installed on the top surface of the bottom plate, a cover plate is fixedly installed on the top of the casing, and the bottom plate The top surface is provided with a DBC substrate, the surface of the DBC substrate is provided with a plurality of SiC chips, the inner side of the housing is provided with a heat conducting member, the outer side of the housing is provided with a plurality of cooling grooves, and a through hole is provided on one side of the cooling groove. A heat sink is fixedly installed inside the heat sink.

优选的,所述DBC基板通过焊接料固定在底板顶面,所述SiC芯片通过焊接料固定在DBC基板顶面。Preferably, the DBC substrate is fixed on the top surface of the bottom plate by solder, and the SiC chip is fixed on the top surface of the DBC substrate by solder.

优选的,所述导热件包括导热垫,所述导热垫一侧设置有连接部,所述连接部一侧与外壳内壁固定。Preferably, the heat conduction element includes a heat conduction pad, one side of the heat conduction pad is provided with a connection part, and one side of the connection part is fixed to the inner wall of the housing.

优选的,所述底板顶面固定安装有多个垫块,所述垫块与导热垫之间固定。Preferably, a plurality of pads are fixedly installed on the top surface of the bottom plate, and the pads are fixed with the heat conduction pad.

优选的,所述散热件具体为散热片,所述散热片共有多个,所述散热片固定安装在散热槽内部。Preferably, the heat dissipation element is specifically a heat dissipation fin, and there are a plurality of heat dissipation fins, and the heat dissipation fins are fixedly installed inside the heat dissipation groove.

与现有技术相比,本实用新型的有益效果是:Compared with the prior art, the beneficial effects of the utility model are:

1.该提高SiC芯片可靠性的封装结构,在SiC芯片工作时产生的高温由DBC基板传导至底板进行散热,并且一部分热能通过导热垫和连接部传导至外壳进行散热,经由多种散热途径,能够有效防止SiC芯片因高温导致的故障,提升SiC芯片的可靠性。1. The packaging structure that improves the reliability of the SiC chip, the high temperature generated during the operation of the SiC chip is conducted from the DBC substrate to the bottom plate for heat dissipation, and part of the heat energy is conducted to the shell through the thermal pad and the connection part for heat dissipation, through various heat dissipation methods, It can effectively prevent the failure of SiC chips caused by high temperature and improve the reliability of SiC chips.

2.该提高SiC芯片可靠性的封装结构,外壳的热能通过多个散热片快速散出,并且散热槽和通孔能够更加有利于散热片与空气接触,从而提升外壳的散热效率,提升整个封装结构的散热效率。2. The packaging structure that improves the reliability of the SiC chip, the heat energy of the shell is quickly dissipated through multiple heat sinks, and the heat sink and through holes can be more conducive to the contact between the heat sink and the air, thereby improving the heat dissipation efficiency of the shell and improving the entire package The cooling efficiency of the structure.

附图说明Description of drawings

图1为本实用新型整体结构示意图;Fig. 1 is a schematic diagram of the overall structure of the utility model;

图2为本实用新型外壳内部结构示意图;Fig. 2 is a schematic diagram of the internal structure of the utility model housing;

图3为本实用新型A放大结构示意图;Fig. 3 is the schematic diagram of enlarged structure of the utility model A;

图4为本实用新型B放大结构示意图。Fig. 4 is a schematic diagram of the enlarged structure of the utility model B.

图中:1、底板;2、外壳;3、盖板;4、DBC基板;5、SiC芯片;6、导热垫;7、散热片;8、垫块;9、连接部;10、散热槽;11、通孔。In the figure: 1. Bottom plate; 2. Shell; 3. Cover plate; 4. DBC substrate; 5. SiC chip; 6. Thermal pad; 7. Heat sink; 8. Pad; ; 11, through hole.

具体实施方式Detailed ways

下面将结合本实用新型实施例中的附图,对本实用新型实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本实用新型一部分实施例,而不是全部的实施例。基于本实用新型中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本实用新型保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. example. Based on the embodiments of the present utility model, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of the present utility model.

实施例一Embodiment one

请参照图1-4所示,本实用新型提供一种提高SiC芯片可靠性的封装结构,包括底板1,底板1顶面固定安装有外壳2,外壳2顶部固定安装有盖板3,底板1顶面设置有DBC基板4,DBC基板4表面设置有多个SiC芯片5,外壳2内侧设置有导热件,外壳2外侧开设有多个散热槽10,散热槽10一侧开设有通孔11,散热槽10内部固定安装有散热件。Please refer to Figures 1-4, the utility model provides a packaging structure to improve the reliability of SiC chips, including a base plate 1, a housing 2 is fixedly installed on the top surface of the base plate 1, a cover plate 3 is fixedly installed on the top of the housing 2, and the base plate 1 The top surface is provided with a DBC substrate 4, and the surface of the DBC substrate 4 is provided with a plurality of SiC chips 5, and the inside of the casing 2 is provided with a heat conducting member, and the outside of the casing 2 is provided with a plurality of cooling grooves 10, and one side of the cooling groove 10 is provided with through holes 11. A heat sink is fixedly installed inside the heat sink 10 .

具体的,在SiC芯片5工作时产生的热由DBC基板4传导至底板1进行散热,并且一部分热能通过导热件传导至外壳2进行散热,外壳2的热能通过散热件快速导出,并且散热槽10和通孔11能够更加有利于散热件与空气接触,从而提升外壳2和SiC芯片5的散热效率。Specifically, the heat generated when the SiC chip 5 is working is conducted from the DBC substrate 4 to the bottom plate 1 for heat dissipation, and a part of the heat energy is conducted to the casing 2 through the heat conduction element for heat dissipation. The heat energy of the casing 2 is quickly exported through the heat dissipation element, and the heat dissipation groove 10 And the through hole 11 can be more conducive to the contact between the heat sink and the air, thereby improving the heat dissipation efficiency of the casing 2 and the SiC chip 5 .

其中:DBC基板4通过焊接料固定在底板1顶面,SiC芯片5通过焊接料固定在DBC基板4顶面,SiC芯片5与DBC基板4之间通过焊料导热,并且DBC基板4与底板1之间也通过焊料导热,能够起到散热效果。Among them: the DBC substrate 4 is fixed on the top surface of the bottom plate 1 by solder, the SiC chip 5 is fixed on the top surface of the DBC substrate 4 by solder, the heat conduction between the SiC chip 5 and the DBC substrate 4 is conducted through solder, and the connection between the DBC substrate 4 and the bottom plate 1 is The space also conducts heat through the solder, which can play a role in heat dissipation.

其中:导热件包括导热垫6,导热垫6一侧设置有连接部9,连接部9一侧与外壳2内壁固定,底板1顶面固定安装有多个垫块8,垫块8与导热垫6之间固定,封装时,将导热垫6置于多个SiC芯片5的表面,并将导热垫6固定于垫块8顶面,垫块8对导热垫6起到支撑效果,将连接部9与外壳2的内壁之间固定,有利于SiC芯片5与外壳2之间的导热效果。Among them: the heat conduction part includes a heat conduction pad 6, a connection part 9 is provided on one side of the heat conduction pad 6, and one side of the connection part 9 is fixed to the inner wall of the casing 2, and a plurality of pads 8 are fixedly installed on the top surface of the bottom plate 1, and the pads 8 and the heat conduction pad 6, when packaging, place the thermal pad 6 on the surface of multiple SiC chips 5, and fix the thermal pad 6 on the top surface of the pad 8, the pad 8 supports the thermal pad 6, and the connecting part 9 is fixed to the inner wall of the housing 2, which is beneficial to the heat conduction effect between the SiC chip 5 and the housing 2.

其中:散热件具体为散热片7,散热片7共有多个,散热片7固定安装在散热槽10内部,散热片7通过与外部空气接触进行快速散热,相较于传统散热方式,散热效率提高较多。Among them: the heat sink is specifically the heat sink 7, and there are multiple heat sinks 7. The heat sink 7 is fixedly installed inside the heat sink 10, and the heat sink 7 quickly dissipates heat by contacting with the outside air. Compared with the traditional heat dissipation method, the heat dissipation efficiency is improved. more.

工作原理:本实用新型为一种提高SiC芯片可靠性的封装结构,封装时,将导热垫6置于多个SiC芯片5的表面,并将导热垫6固定于垫块8顶面,垫块8对导热垫6起到支撑效果,将连接部9与外壳2的内壁之间固定;Working principle: the utility model is a packaging structure that improves the reliability of SiC chips. When packaging, the thermal pad 6 is placed on the surface of a plurality of SiC chips 5, and the thermal pad 6 is fixed on the top surface of the pad 8, and the pad 8 play a supporting effect on the heat conduction pad 6, and fix the connecting part 9 and the inner wall of the shell 2;

在SiC芯片5工作时产生的热由DBC基板4传导至底板1进行散热,并且一部分热能通过导热垫6和连接部9传导至外壳2进行散热,外壳2的热能通过多个散热片7快速导出,并且散热槽10和通孔11能够更加有利于散热片7与空气接触,从而提升外壳2的散热效率,从而加快SiC芯片5的散热效率,防止SiC芯片5因高温出现故障甚至损毁,提升了SiC芯片的可靠性。The heat generated during the operation of the SiC chip 5 is conducted from the DBC substrate 4 to the bottom plate 1 for heat dissipation, and part of the heat energy is conducted to the casing 2 through the thermal pad 6 and the connection part 9 for heat dissipation, and the heat energy of the casing 2 is quickly exported through a plurality of heat sinks 7 , and the heat dissipation groove 10 and the through hole 11 can be more conducive to the contact between the heat dissipation sheet 7 and the air, thereby improving the heat dissipation efficiency of the shell 2, thereby accelerating the heat dissipation efficiency of the SiC chip 5, preventing the SiC chip 5 from malfunctioning or even being damaged due to high temperature, and improving the performance of the SiC chip 5. Reliability of SiC chips.

本说明中未作详细描述的内容属于本领域专业技术人员公知的现有技术。The content not described in detail in this description belongs to the prior art known to those skilled in the art.

尽管参照前述实施例对本实用新型进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换,凡在本实用新型的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本实用新型的保护范围之内。Although the utility model has been described in detail with reference to the aforementioned embodiments, those skilled in the art can modify the technical solutions described in the aforementioned embodiments, or perform equivalent replacements for some of the technical features. Within the spirit and principles of the utility model, any modification, equivalent replacement, improvement, etc., should be included in the protection scope of the utility model.

Claims (5)

1. The utility model provides an improve packaging structure of SiC chip reliability, includes bottom plate (1), its characterized in that: bottom plate (1) top surface fixed mounting has shell (2), shell (2) top fixed mounting has apron (3), bottom plate (1) top surface is provided with DBC base plate (4), DBC base plate (4) surface is provided with a plurality of SiC chips (5), shell (2) inboard is provided with heat-conducting piece, a plurality of radiating grooves (10) have been seted up in the shell (2) outside, through-hole (11) have been seted up to radiating groove (10) one side, radiating groove (10) inside fixed mounting has the radiating piece.
2. The packaging structure for improving the reliability of the SiC chip according to claim 1, wherein: the DBC substrate (4) is fixed on the top surface of the bottom plate (1) through welding materials, and the SiC chip (5) is fixed on the top surface of the DBC substrate (4) through welding materials.
3. The packaging structure for improving the reliability of the SiC chip according to claim 1, wherein: the heat conducting piece comprises a heat conducting pad (6), one side of the heat conducting pad (6) is provided with a connecting part (9), and one side of the connecting part (9) is fixed with the inner wall of the shell (2).
4. The packaging structure for improving reliability of the SiC chip according to claim 3, wherein: the top surface of the bottom plate (1) is fixedly provided with a plurality of cushion blocks (8), and the cushion blocks (8) and the heat conducting pad (6) are fixed.
5. The packaging structure for improving the reliability of the SiC chip according to claim 1, wherein: the radiating piece is specifically fin (7), fin (7) are a plurality of in total, fin (7) fixed mounting is in heat dissipation groove (10).
CN202223430352.XU 2022-12-21 2022-12-21 Packaging structure for improving reliability of SiC chip Expired - Fee Related CN218769495U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117096122A (en) * 2023-10-19 2023-11-21 广东仁懋电子有限公司 A new energy storage silicon carbide power device and its packaging structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117096122A (en) * 2023-10-19 2023-11-21 广东仁懋电子有限公司 A new energy storage silicon carbide power device and its packaging structure
CN117096122B (en) * 2023-10-19 2024-01-09 广东仁懋电子有限公司 New energy storage silicon carbide power device and packaging structure thereof

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