CN216699080U - Novel high-power stacked array laser - Google Patents
Novel high-power stacked array laser Download PDFInfo
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- CN216699080U CN216699080U CN202122917277.9U CN202122917277U CN216699080U CN 216699080 U CN216699080 U CN 216699080U CN 202122917277 U CN202122917277 U CN 202122917277U CN 216699080 U CN216699080 U CN 216699080U
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Abstract
The utility model provides a novel high-power stacked array laser, which comprises a stacked array chip, an electrode connected with the stacked array chip, and insulating heat dissipation ceramics and heat sinks which are sequentially arranged below the stacked array chip, wherein an output light path of the stacked array chip is a straight line; the stacked array chip comprises at least 2 chip groups, each chip group comprises a first chip and a second chip which are vertically arranged in parallel, the direction of the positive electrode of the first chip is opposite to that of the negative electrode of the second chip, the negative electrode of the first chip is connected with the positive electrode of the second chip, and adjacent chip groups in the same row are communicated; the array stacking chips are arranged in at least two rows, each row is communicated with the other row through a lead, the positive electrode of each array stacking chip is arranged in the first row, and the negative electrode of each array stacking chip is arranged in the last row. The utility model adopts the vertical arrangement of the bars, and each unit is in array combination arrangement, the arrangement mode has high light spot tightness, the fast and slow axes can directly lead light to enter the light cone without light spot compression, and the comprehensive performance of vertical and horizontal stacking can be realized.
Description
Technical Field
The utility model relates to the technical field of basic electrical elements, in particular to a novel high-power stacked array laser.
Background
Based on the fact that the power of the existing high-power laser stack array laser is higher and higher, the uniformity of light spots of the high-power laser stack array laser and the array arrangement mode of the laser are very important. The existing high-power stacked array laser adopts a horizontal arrangement mode, a fast-slow axis collimating lens needs to be added for the size of a light spot and the like, and meanwhile, the problems of uneven light spot and the like caused by the addition of the fast-slow axis collimating lens are high in technical and production difficulties.
Disclosure of Invention
The utility model provides a novel high-power stacked array laser, aiming at solving the problem of the arrangement mode of the stacked array laser, wherein bars are vertically arranged, each unit is in array combination arrangement, the arrangement mode has high light spot compactness, a fast axis and a slow axis can directly lead light to enter a light cone without light spot compression, and the comprehensive performance of vertical and horizontal stacked arrays can be realized.
The utility model provides a novel high-power stacked array laser, which comprises a stacked array chip, an electrode connected with the stacked array chip, and insulating heat dissipation ceramics and a heat sink which are sequentially arranged below the stacked array chip;
the stacked array chip comprises at least 2 chip groups, each chip group comprises a first chip and a second chip which are vertically arranged in parallel, the direction of the positive electrode of the first chip is opposite to that of the negative electrode of the second chip, the negative electrode of the first chip is connected with the positive electrode of the second chip, and adjacent chip groups in the same row are communicated;
the chip sets are arranged into at least two rows, each row is communicated through a conducting wire, the positive electrode of the stacked array chip is arranged in the first row, the negative electrode of the stacked array chip is arranged in the last row, and the output light path of the stacked array chip is a straight line;
the electrode comprises a first electrode and a second electrode, the first electrode is welded with the positive electrode surface of the array chip, the second electrode is welded with the negative electrode surface of the array chip, and the light emitting surface of the array chip is flush with the edges of the first electrode and the second electrode.
As an optimal mode, the stacked array chip is 3 rows, 4 chip groups are arranged in each row, and the circuit of the stacked array chip is S-shaped.
According to the novel high-power stacked array laser, as a preferred mode, the first chip and the second chip are made of gallium arsenide, and the size of the first chip and the size of the second chip are 10 multiplied by 1.0 multiplied by 0.12 mm.
According to the novel high-power stacked array laser, as a preferable mode, the first electrode and the second electrode are made of tungsten copper, the size of the first electrode is 10 multiplied by 1.5 multiplied by 1mm, and the size of the second electrode is 10 multiplied by 1.5 multiplied by 0.88 mm.
The utility model relates to a novel high-power stacked array laser, which is characterized in that the length of insulating heat-dissipation ceramic is as follows as a preferred mode: 1-1000 mm, width: 1-1000 mm, height: 0.1-30 mm;
the surface of the insulating heat dissipation ceramic is plated with titanium platinum gold, nickel palladium gold or nickel gold.
According to the novel high-power stacked array laser, as a preferred mode, the heat sink is a macro-channel heat dissipation heat sink.
In order to achieve the purpose, the utility model adopts the technical scheme that:
a novel high-power stacked array laser comprises a heat sink, a laser unit (comprising 2 electrodes and 1 chip) and insulating heat-dissipation ceramic.
The heat sink is made of a metal material with good heat dissipation performance;
the electrode is made of tungsten-copper material, and has the following dimensions: 0.1-100 mm, 0.1-100 mm wide and 0.1-100 mm high;
the chip is made of gallium arsenide material, and the size is as long: 0.1-100 mm, 0.1-100 mm wide and 0.1-10 mm high;
the insulating heat dissipation ceramic is AlN or ceramic with good heat conduction performance, the surface of the insulating heat dissipation ceramic is plated with titanium platinum or nickel platinum, nickel palladium gold, nickel gold and the like, and the insulating heat dissipation ceramic has the following size: 1-1000 mm, 1-1000 mm wide and 0.1-30 mm high;
wherein the area of the insulating and heat dissipating ceramic is determined by the number of the laser units.
A novel high-power stacked array laser is designed according to the following principle:
step 1, designing a laser unit: the size of the electrode is matched with that of the chip, so that the light emitting paths of the laser are finally arranged on the same line, and the consistency of light spots can be ensured;
step 2, designing the insulating heat-dissipation ceramic: the design of the insulating heat dissipation ceramic is shown in figure 1, an S-shaped circuit can be formed after the insulating heat dissipation ceramic is welded with a laser unit, and the circuit direction can be designed transversely or longitudinally.
Step 3, designing a high-power stacked array laser: and the macro-channel heat dissipation heat sink and the insulating heat dissipation ceramic are adopted, and the laser unit is welded to complete the integral assembly welding of the laser.
The utility model has the following advantages:
(1) the laser has simple preparation process, can avoid adding a collimating lens for rear-end optical coupling, can be directly carried out by adding a cylindrical lens, and has uniform laser spots.
(2) The novel process method is simple, and the prepared laser can realize uniform output of light spots.
Drawings
FIG. 1 is a schematic structural diagram of a novel high-power stacked laser;
fig. 2 is a schematic diagram of the current trend of a novel high-power stacked array laser.
Reference numerals:
1. stacking array chips; 2. an electrode; 3. insulating heat-dissipating ceramic; 4. a heat sink.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example 1
As shown in fig. 1, a novel high-power stacked laser is characterized in that: the array structure comprises a stacked array chip 1, an electrode 2 connected with the stacked array chip 1, and insulating heat dissipation ceramics 3 and a heat sink 4 which are sequentially arranged below the stacked array chip 1;
the stacked array chip 1 comprises at least 2 chip groups, each chip group comprises a first chip and a second chip which are vertically arranged in parallel, the direction of the positive electrode of the first chip is opposite to that of the negative electrode of the second chip, the negative electrode of the first chip is connected with the positive electrode of the second chip, and adjacent chip groups in the same row are communicated;
the chip sets are arranged into at least two rows, each row is communicated through a conducting wire, the positive electrode of the stacked array chip 1 is arranged in the first row, the negative electrode of the stacked array chip 1 is arranged in the last row, and the output light path of the stacked array chip 1 is a straight line;
the electrode 2 comprises a first electrode and a second electrode, the first electrode is welded with the positive electrode surface of the stacked array chip 1, the second electrode is welded with the negative electrode surface of the stacked array chip 1, and the light emitting surface of the stacked array chip 1 is flush with the edges of the first electrode and the second electrode;
as shown in fig. 2, the stacked array chip 1 has 3 rows, each row is provided with 4 chip sets, and the circuit of the stacked array chip 1 is in an S-shape;
the first chip and the second chip are made of gallium arsenide and have the size of 10 multiplied by 1.0 multiplied by 0.12 mm; the first electrode and the second electrode are made of tungsten copper, the size of the first electrode is 10 multiplied by 1.5 multiplied by 1mm, and the size of the second electrode is 10 multiplied by 1.5 multiplied by 0.88 mm;
the length of the insulating and heat-dissipating ceramic 3 is: 1-1000 mm, width: 1-1000 mm, height: 0.1-30 mm;
plating titanium platinum gold or nickel palladium gold or nickel gold on the surface of the insulating heat dissipation ceramic 3;
heatsink 4 is a macro-channel heat sink.
Example 2
As shown in fig. 1-2, the components of a novel high-power stacked laser include a laser unit (including a chip 1 and an electrode 2), an insulating heat-dissipating ceramic 3, and a heat sink 4.
The heat sink 4 is made of a metal material with good heat dissipation performance;
the electrode is made of tungsten copper material, and the size of the electrode 1 is length × width × height: 10 × 1.5 × 1mm, and the thickness of the electrode 2 is 10 × 1.5 × 0.88 mm;
the chip is made of gallium arsenide material, and the size is length multiplied by width multiplied by height: 10X 1.0X 0.12 mm;
the insulating heat-dissipating ceramic 3 is AlN or ceramic with good heat-conducting property, the surface of the insulating heat-dissipating ceramic is plated with titanium platinum or nickel platinum, nickel palladium gold, nickel gold and the like, and the insulating heat-dissipating ceramic has the following dimensions: 30.8mm, 12mm wide and 0.3mm high;
wherein the area of the insulating and heat dissipating ceramic 3 is determined by the number of laser units.
A novel high-power stacked array laser comprises the following preparation steps:
step 1, preparing a laser unit: through electrode and 1 size cooperation of chip, the anodal 10X 1.5mm face welding with electrode 1 of chip 1, chip 1 light emitting area and electrode edge parallel and level, chip 1 negative pole and the 10X 1.5mm face welding of electrode 2, chip 1 light emitting area and electrode edge parallel and level.
Step 2, preparing a high-power stacked array laser: and the macro-channel heat dissipation heat sink 4 and the insulating heat dissipation ceramic 3 are adopted to weld the laser unit, so that the integral assembly welding of the laser is completed.
Example 3
As shown in fig. 1-2, the components of a novel high-power stacked laser include a laser unit (including a chip 1 and an electrode 2), an insulating heat-dissipating ceramic 3, and a heat sink 4.
The heat sink 4 is made of a metal material with good heat dissipation performance;
the electrode is made of tungsten copper material, and the size of the electrode 1 is length × width × height: 10 × 1.5 × 1mm, and the thickness of the electrode 2 is 10 × 1.5 × 0.9 mm;
the chip 1 is made of gallium arsenide material, and the size is length multiplied by width multiplied by height: 10X 1.0X 0.1 mm;
the insulating heat dissipation ceramic 3 is AlN or ceramic with good heat conductivity, the surface of the ceramic is plated with titanium platinum gold or nickel platinum gold, nickel palladium gold, nickel gold and the like, and the size is as long as: 30.8mm, 12mm in width and 0.3mm in height;
wherein the area of the insulating and heat dissipating ceramic 3 is determined by the number of laser units.
A novel high-power stacked array laser comprises the following preparation steps:
step 1, preparing a laser unit: through electrode and 1 size fit of chip, the anodal 10X 1.5mm face welding with electrode 1 of chip 1, chip 1 light emitting area and electrode edge parallel and level, chip 1 negative pole and the 10X 1.5mm face welding of electrode 2, chip 1 light emitting area and electrode edge parallel and level.
Step 2, preparing a high-power stacked array laser: and the macro-channel heat dissipation heat sink and the insulating heat dissipation ceramic are adopted, and the laser unit is welded to complete the integral assembly welding of the laser.
Example 4
As shown in fig. 1-2, the components of a novel high-power stacked laser include a laser unit (including a chip 1 and an electrode 2), an insulating heat-dissipating ceramic 3, and a heat sink 4.
The heat sink 4 is made of a metal material with good heat dissipation performance;
the electrode is made of tungsten copper material, and the size of the electrode 1 is length × width × height: 10 × 1.5 × 1mm, and the thickness of the electrode 2 is 10 × 1.5 × 0.87 mm;
the chip 1 is made of gallium arsenide material, and the size is length multiplied by width multiplied by height: 10X 1.0X 0.13 mm;
the insulating heat-dissipating ceramic 3 is AlN or ceramic with good heat-conducting property, the surface of the insulating heat-dissipating ceramic is plated with titanium platinum or nickel platinum, nickel palladium gold, nickel gold and the like, and the insulating heat-dissipating ceramic has the following dimensions: 30.8mm, 12mm wide and 0.3mm high;
wherein the area of the insulating and heat dissipating ceramic 3 is determined by the number of laser units.
A novel high-power stacked array laser comprises the following preparation steps:
step 1, preparing a laser unit: through electrode and 1 size cooperation of chip, the anodal 10X 1.5mm face welding with electrode 1 of chip 1, chip 1 light emitting area and electrode edge parallel and level, chip 1 negative pole and the 10X 1.5mm face welding of electrode 2, chip 1 light emitting area and electrode edge parallel and level.
Step 2, preparing a high-power stacked array laser: and the macro-channel heat sink 4 and the insulating heat dissipation ceramic 3 are adopted for welding the laser unit, so that the integral assembly welding of the laser is completed.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and equivalent alternatives or modifications according to the technical solution of the present invention and the inventive concept thereof should be covered by the scope of the present invention.
Claims (6)
1. A novel high-power stacked array laser is characterized in that: the array structure comprises a stacked array chip (1), an electrode (2) connected with the stacked array chip (1), and insulating heat dissipation ceramics (3) and a heat sink (4) which are sequentially arranged below the stacked array chip (1);
the stacked array chip (1) comprises at least 2 chip groups, each chip group comprises a first chip and a second chip which are vertically arranged in parallel, the direction of the positive electrode and the direction of the negative electrode of the first chip are opposite to that of the negative electrode of the second chip, the negative electrode of the first chip is connected with the positive electrode of the second chip, and the adjacent chip groups in the same row are communicated;
the array stacking chip comprises chip groups, wherein the chip groups are arranged in at least two rows, each row is communicated through a conducting wire, the anode of the array stacking chip (1) is arranged in the first row, the cathode of the array stacking chip (1) is arranged in the last row, and the output light path of the array stacking chip (1) is a straight line;
the electrode (2) comprises a first electrode and a second electrode, the first electrode is welded with a positive electrode surface of the array chip (1), the second electrode is welded with a negative electrode surface of the array chip (1), and a light emitting surface of the array chip (1) is flush with the first electrode and the edge of the second electrode.
2. The novel high-power stacked laser device as claimed in claim 1, wherein: the stacked array chip (1) is provided with 3 rows of 4 chip groups, and the circuit of the stacked array chip (1) is S-shaped.
3. The novel high-power stacked laser device as claimed in claim 1, wherein: the first chip and the second chip are made of gallium arsenide and have the size of 10 multiplied by 1.0 multiplied by 0.12 mm.
4. The novel high-power stacked laser device as claimed in claim 1, wherein: the first electrode and the second electrode are made of tungsten copper, the size of the first electrode is 10 multiplied by 1.5 multiplied by 1mm, and the size of the second electrode is 10 multiplied by 1.5 multiplied by 0.88 mm.
5. The novel high-power stacked laser device as claimed in claim 1, wherein: the length of the insulating heat dissipation ceramic (3) is as follows: 1-1000 mm, width: 1-1000 mm, height: 0.1-30 mm;
the surface of the insulating heat dissipation ceramic (3) is plated with titanium, platinum, nickel, palladium, gold or nickel, gold.
6. The novel high-power stacked laser device as claimed in claim 1, wherein: the heat sink (4) is a macro-channel heat dissipation heat sink.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122917277.9U CN216699080U (en) | 2021-11-25 | 2021-11-25 | Novel high-power stacked array laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122917277.9U CN216699080U (en) | 2021-11-25 | 2021-11-25 | Novel high-power stacked array laser |
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| Publication Number | Publication Date |
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| CN216699080U true CN216699080U (en) | 2022-06-07 |
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| CN202122917277.9U Active CN216699080U (en) | 2021-11-25 | 2021-11-25 | Novel high-power stacked array laser |
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- 2021-11-25 CN CN202122917277.9U patent/CN216699080U/en active Active
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