CN112382622A - Novel TO encapsulation - Google Patents
Novel TO encapsulation Download PDFInfo
- Publication number
- CN112382622A CN112382622A CN202011399425.6A CN202011399425A CN112382622A CN 112382622 A CN112382622 A CN 112382622A CN 202011399425 A CN202011399425 A CN 202011399425A CN 112382622 A CN112382622 A CN 112382622A
- Authority
- CN
- China
- Prior art keywords
- frame
- metal bottom
- novel
- pins
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Rectifiers (AREA)
Abstract
The invention relates TO the technical field of TO packaging equipment, and provides a novel TO package, which comprises a frame, wherein a first pin is connected TO the side wall of the frame, and a plurality of second pins separated from the frame are arranged at two ends of the first pin; the frame is provided with a plurality of metal bottom plates which are mutually separated through an insulating outer frame, and the metal bottom plates are connected with the second pins through leads. The invention overcomes the defects of the prior art, has reasonable design and compact structure, solves the problem that the whole circuit does not have high-power and high-current capacity because the existing TO packaging adopts a serial common cathode mode, adopts a parallel common anode mode TO form a rectifier bridge with a diode of a common cathode for use through simple structural combination, has the high-power and high-current capacity, improves the application range, adopts a common cathode frame, improves the adaptation effect, reduces the cost, greatly reduces the space and has strong practicability.
Description
Technical Field
The invention relates TO the technical field of TO packaging equipment, in particular TO a novel TO package.
Background
The semiconductor device in the TO packaging form is one of the most common device packaging forms in the field of semiconductor devices, and the TO packaging form for packaging a diode chip is a novel TO packaging common form of a diode device.
In the prior art, chinese patent CN201820103476.1 discloses a series diode device based on TO package form, which includes at least two diode chips (2), a copper-clad ceramic plate (3) is disposed at the chip welding portion of a frame (1), and at least one diode chip (2) in the diode chip set is welded on the surface of the copper-clad ceramic plate (3).
The above connection method has the following problems:
1. the connection of the chips adopts a mode of connecting the chips in series and sharing the cathode, namely, a plurality of chips share one cathode to be connected in series, so that the whole circuit does not have the capability of high power and high current.
2. The TO packaging connection structure for the cathode is complex, inconvenient automatic processing is achieved, the process difficulty is improved, meanwhile, a customized frame and a mold in the processing process are needed, and the cost is improved TO a certain extent. Meanwhile, the external dimension of the finished product is different from that of the existing TO package;
3. the structure is compact, the heat dissipation is difficult, and the chip is easy to burn out due to the heat generated during the work.
TO this end, we propose a new type of TO package.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the novel TO packaging structure provided by the invention overcomes the defects of the prior art, is reasonable in design and compact in structure, and solves the problem that the whole circuit does not have high-power and high-current capacity because the conventional TO packaging structure is in a mode of connecting common cathodes in series.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme:
a novel TO package comprises a frame, wherein a first pin is connected TO the side wall of the frame, and a plurality of second pins separated from the frame are arranged at two ends of the first pin;
the frame is provided with a plurality of metal bottom plates which are mutually separated through an insulating outer frame, and the metal bottom plates are connected with the second pins through leads;
and the metal bottom plate is connected with diode chips, and the diode chips are mutually connected with the same first pin through leads.
Furthermore, the insulating outer frame is made of ceramic materials.
Further, the frame is formed by integrally forging metal materials.
Furthermore, a groove corresponding to the metal bottom plate is arranged on the frame.
Furthermore, the frame and the metal bottom plate as well as the metal bottom plate and the diode chip are connected by welding.
Furthermore, the number of the second pins is the same as that of the diode chips, and the second pins and the diode chips correspond to each other.
Further, the metal bottom plate is made of conductive metal.
(III) advantageous effects
The embodiment of the invention provides a novel TO packaging structure. The method has the following beneficial effects:
1. the device has the capability of high power and high current, and the application range is improved. By adopting the connection mode of connecting the common anode in parallel, the rectifier bridge can be formed with the diode of the common cathode to be used, the rectifier bridge has the capability of high power and high current, and the application range is improved.
2. The adoption of the common anode mode can greatly reduce the application and installation space of the finished product. By adopting the common anode mode, a plurality of chips can be conveniently connected in parallel in one frame, the number of the frames can be reduced, and therefore the occupied space is reduced.
3. The cost is saved, the connection mode of the common anode in parallel connection and the common cathode connection mode are adopted, the adopted frame is the same, the mold opening is not needed to be performed again to produce a new frame, and the cost is greatly saved.
4. The processing is convenient, and a plurality of chips are all plane laying welding, and are compatible with the existing equipment technology, realize high-efficient production and high quality control, consequently make things convenient for automated processing, improve machining efficiency, reduce the technology degree of difficulty.
5. The service life is prolonged. The disjunctor of structure bonding lead separation in this patent can not produce the line short circuit unusual, and circular telegram work self electromagnetic radiation is minimum for the diode is more reliable and more stable, improves life.
6. The structure is wide and the heat dissipation capability is strong. The insulating frame is ceramic material, improves the radiating effect simultaneously, improves life.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic circuit diagram of the structure of the present invention.
In the figure: the LED module comprises a frame 1, a first pin 2, a second pin 3, a metal bottom plate 4, an insulating outer frame 5, a diode chip 6 and a lead 7.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring TO fig. 1-2, a novel TO package includes a frame 1, the frame 1 is formed by integrally forging a metal material, and is convenient TO process, a first pin 2 is connected TO a side wall of the frame 1, and a plurality of second pins 3 spaced from the frame 1 are disposed at two ends of the first pin 2;
the frame 1 is welded with a plurality of metal bottom plates 4, the metal bottom plates 4 are made of conductive metal, the metal bottom plates 4 are mutually separated through an insulating outer frame 5, the metal bottom plates 4 are separated through the insulating outer frame 5, the two metal bottom plates 4 are prevented from forming a passage and mutual interference, the insulating outer frame 5 is made of ceramic materials, the heat dissipation effect is improved, the service life is prolonged, the metal bottom plates 4 are connected with the second pins 3 through leads 7, the number of the second pins 3 is the same as that of the diode chips 6, the second pins 3 and the diode chips 6 are mutually corresponding, the diode chips 6 are welded on the metal bottom plates 4, the diode chips 6 are mutually connected with the same first pin 2 through leads 7 to form a passage of parallel common anodes of the second pins 3-leads 7-the metal bottom plates 4-the diode chips 6-the leads 7-the first pins 2, and a connection mode of parallel common, the diode can form a rectifier bridge with a common cathode diode for use, has the capability of high power and high current, and improves the application range.
In this embodiment, as shown in fig. 2, the space can be greatly reduced by using the common anode, and a plurality of chips can be conveniently connected in parallel in one frame by using the common anode, so that the number of frames can be reduced, and the occupied space can be reduced.
The cost is saved, the connection mode of parallel connection of the common anode and the common cathode is adopted, the adopted frame 1 is the same, the mold opening is not needed to be performed again to produce a new frame 1, and the cost is greatly saved.
Convenient processing, a plurality of diode chips 6 are all laid on the plane, and are compatible with the existing equipment technology, realize high-efficient production and high quality control, consequently make things convenient for automated processing, improve machining efficiency, reduce the technology degree of difficulty.
The service life is prolonged. The disjunctor of structure bonding lead separation in this patent can not produce the line short circuit unusual, and circular telegram work self electromagnetic radiation is minimum for the diode is more reliable and more stable, improves life.
In this embodiment, as shown in fig. 1, the frame 1 is provided with a groove corresponding to the metal base plate 4, and the groove can facilitate accurate fixed welding of the metal base plate 4.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (7)
1. A novel TO package comprises a frame, wherein a first pin is connected TO the side wall of the frame, and a plurality of second pins separated from the frame are arranged at two ends of the first pin;
the method is characterized in that: the frame is provided with a plurality of metal bottom plates which are mutually separated through an insulating outer frame, and the metal bottom plates are connected with the second pins through leads;
and the metal bottom plate is connected with diode chips, and the diode chips are mutually connected with the same first pin through leads.
2. A novel TO package as claimed in claim 1 wherein: the insulating outer frame is made of ceramic materials.
3. A novel TO package as claimed in claim 1 wherein: the frame is integrally formed by forging metal materials.
4. A novel TO package as claimed in claim 1 wherein: the frame is provided with a groove corresponding to the metal bottom sheet.
5. A novel TO package as claimed in claim 1 wherein: the frame and the metal bottom plate as well as the metal bottom plate and the diode chip are connected by welding.
6. A novel TO package as claimed in claim 1 wherein: the number of the second pins is the same as that of the diode chips, and the second pins and the diode chips correspond to each other.
7. A novel TO package as claimed in claim 1 wherein: the metal bottom sheet is made of conductive metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011399425.6A CN112382622A (en) | 2020-12-01 | 2020-12-01 | Novel TO encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011399425.6A CN112382622A (en) | 2020-12-01 | 2020-12-01 | Novel TO encapsulation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112382622A true CN112382622A (en) | 2021-02-19 |
Family
ID=74590385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011399425.6A Pending CN112382622A (en) | 2020-12-01 | 2020-12-01 | Novel TO encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112382622A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4250355A3 (en) * | 2022-03-23 | 2023-10-11 | Huawei Digital Power Technologies Co., Ltd. | Package structure of bidirectional switch, semiconductor device, and power converter |
-
2020
- 2020-12-01 CN CN202011399425.6A patent/CN112382622A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4250355A3 (en) * | 2022-03-23 | 2023-10-11 | Huawei Digital Power Technologies Co., Ltd. | Package structure of bidirectional switch, semiconductor device, and power converter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109994439A (en) | A kind of IGBT module and its packaging technology of high-temperature resistant degree circulation | |
| CN112382622A (en) | Novel TO encapsulation | |
| CN115513770A (en) | Laser module, semiconductor laser array packaging assembly and semiconductor laser | |
| CN213401187U (en) | Parallel common anode TO package | |
| CN110010579A (en) | A kind of signal terminal built-in power semiconductor module and its packaging technology | |
| CN203812910U (en) | High-utilization-rate and high-luminous-efficiency LED array support | |
| CN114743944B (en) | Module diode and manufacturing method thereof | |
| CN209000909U (en) | A kind of compact-sized lead frame row | |
| CN216213439U (en) | Full-color LED display unit and LED circuit board | |
| CN114725075A (en) | Power module terminal and power module | |
| CN210778574U (en) | DBC structure suitable for high-voltage power device module packaging | |
| CN216902929U (en) | Chip frame structure for inhibiting temperature rise difference in rectifier bridge | |
| CN113824337B (en) | Three-phase rectifying module and manufacturing method thereof | |
| CN216354173U (en) | Modular axial diode | |
| CN216749865U (en) | Power module with flexibly-arranged terminals | |
| CN220439609U (en) | Module bypass diode | |
| CN214797407U (en) | Diode and photovoltaic module | |
| CN211480501U (en) | Semiconductor laser with insulating heat sink | |
| CN217849258U (en) | High-current Schottky rectifier module with high surge capacity and low contact thermal resistance | |
| CN216699080U (en) | Novel high-power stacked array laser | |
| CN115395260B (en) | Connection structure and power module | |
| CN218569491U (en) | Laser module, semiconductor laser array packaging assembly and semiconductor laser | |
| CN213746190U (en) | Multistage heat dissipation formula LED lamp pearl | |
| CN211046787U (en) | Small three-phase rectifier bridge structure | |
| CN220172121U (en) | Packaging structure based on SOT-227 packaging module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |