CN220439609U - Module bypass diode - Google Patents

Abstract

The application discloses a module bypass diode, include: the device comprises a plastic package body, a chip, a positive electrode conductive bottom plate and a negative electrode conductive bottom plate; one end of the negative electrode conductive bottom plate is provided with a negative electrode connecting part, and a chip area for placing a plurality of chips is arranged on the negative electrode connecting part and is used for being connected with the negative electrode surface of the chips; the other end of the negative electrode conductive bottom plate is provided with a negative electrode pin; one end of the positive electrode conductive bottom plate is provided with a positive electrode connecting part and is connected with the positive electrode surface of the chip, the other end of the positive electrode conductive bottom plate is provided with a positive electrode pin; the connection area of the positive electrode conductive bottom plate and the chip and the connection area of the negative electrode conductive bottom plate and the chip are arranged in the plastic package body; the positive electrode conductive bottom plate and the negative electrode conductive bottom plate are connected to the chip in a step-type manner. The module bypass diode can meet the requirement of large current, and meanwhile, the overall electrical property and the heat dissipation performance are improved.

Description

Module bypass diode

Technical Field

The application relates to the technical field of diodes, in particular to a module bypass diode.

Background

The bypass diode is an electronic device made of semiconductor material (silicon) and has unidirectional conductivity, and a photovoltaic module is applied; the diode is connected in parallel at two ends of the battery assembly and is in a reverse bias state when the battery assembly is in normal state, and when hot spots occur, the diode is conducted in the forward direction, so that the battery assembly is effectively protected.

With the development of technologies such as large silicon chips, double-sided double-glass and the like in the photovoltaic module industry, the module power is continuously increased, the current-passing capability of the bypass diode is also required to be higher, when the current is overlarge, the heat-dissipating capability of the bypass diode is insufficient, the chip junction temperature is too high to cause failure, and when the current is serious, the power station fires;

most bypass diodes in the industry are connected in a bridging way (copper jumper wires and aluminum wires) at present, and the structure is shown in fig. 1 and 2, and the bypass diodes comprise an anode conductive bottom plate 1, a cathode conductive bottom plate 2, a chip 3 and a jumper wire 4, wherein the chip 3 is welded on the cathode conductive bottom plate 2, and the chip 3 is connected with the anode conductive bottom plate 1 through the jumper wire 4; the axial bypass diode cannot meet the requirement of high current, meanwhile, the production efficiency of the bypass mode is low, adverse phenomena are easy to occur, and the overall electrical performance is influenced.

Disclosure of Invention

The application provides a module bypass diode, can satisfy the heavy current requirement, improves whole electric property and heat dispersion simultaneously.

According to some embodiments, the present application provides a module bypass diode comprising: the device comprises a plastic package body, a chip, a positive electrode conductive bottom plate and a negative electrode conductive bottom plate; one end of the negative electrode conductive bottom plate is provided with a negative electrode connecting part, a chip area for placing a plurality of chips is arranged on the negative electrode connecting part, and the negative electrode surface of the chip is placed on the chip area and is connected with the negative electrode conductive bottom plate; the other end of the negative electrode conductive bottom plate is provided with a negative electrode pin; one end of the positive electrode conductive bottom plate is provided with a positive electrode connecting part and is connected with the positive electrode surface of the chip, and the other end of the positive electrode conductive bottom plate is provided with a positive electrode pin; the connection area of the positive electrode conductive bottom plate and the chip and the connection area of the negative electrode conductive bottom plate and the chip are arranged in the plastic package body; the positive electrode conductive bottom plate and the negative electrode conductive bottom plate are connected to the chip in a step-type manner.

Optionally, the positive electrode conductive bottom plate is arranged close to the box cover of the plastic package body, and the negative electrode conductive bottom plate is arranged close to the box bottom of the plastic package body.

Optionally, the positive conductive bottom plate and the negative conductive bottom plate have the same size and dimension, and are symmetrically arranged about the chip.

Optionally, the positive electrode conductive bottom plate and the negative electrode conductive bottom plate are both L-shaped and have a plate-shaped structure, and the positive electrode conductive bottom plate, the plastic package body and the negative electrode conductive bottom plate are integrally U-shaped.

Optionally, the negative electrode connecting portion is provided with solder paste on the chip area, the negative electrode surface of the chip is attached to the solder paste on the chip area, and the positive electrode surface of the chip is also provided with solder paste for connection with the positive electrode connecting portion.

Optionally, the positive electrode connecting portion is provided with a bump structure, and the convex end of the bump structure and the position of the positive electrode surface of the chip, where the solder paste is arranged, are cured and welded.

Optionally, the bump structure is provided with a tin overflow hole penetrating the positive electrode conductive bottom plate at the convex end, and the tin overflow hole is used for discharging the redundant tin paste from the tin overflow hole under the lower pressure of the positive electrode conductive bottom plate.

Optionally, the positive electrode conductive bottom plate and the negative electrode conductive bottom plate are respectively provided with a converging strip hole, chu Xicao and a positioning hole for positioning a junction box positioning column, and the converging strip holes penetrate through the positive electrode conductive bottom plate or the negative electrode conductive bottom plate in the thickness direction.

Optionally, a waterproof groove is further formed in the negative conductive bottom plate, the waterproof groove is arranged between the busbar holes and the chip area, and the waterproof groove is used for prolonging the path length of the treatment solution on the surface of the bypass diode penetrating to the chip.

Optionally, the positive electrode conductive bottom plate and the negative electrode conductive bottom plate are punched and cut by a copper material to form a required shape so as to be packaged.

Embodiments of the present disclosure have at least the following advantages:

firstly, a chip area is arranged on the negative electrode connecting part, and a plurality of chips can be placed in the chip area, so that the requirement setting of large-size chips or more than two chips for meeting current requirements can be met; secondly, the positive electrode conductive bottom plate and the negative electrode conductive bottom plate are connected to the chip in a step-type manner, so that heat dissipation is facilitated; finally, the connection area of the positive electrode conductive bottom plate and the chip and the connection area of the negative electrode conductive bottom plate and the chip are packaged through the plastic package body, so that good air tightness and electrical property can be ensured;

compared with the traditional bypass process, the module bypass diode in the second embodiment is convenient to assemble, high in production efficiency, not prone to generating bad phenomenon in welding, capable of meeting high-current requirements, and capable of improving overall electrical performance and heat dissipation performance.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the conventional technology, the drawings that are required to be used in the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.

FIG. 1 is a first block diagram of a bypass diode in the prior art in which a positive conductive substrate and a negative conductive substrate are connected in a bypass manner;

FIG. 2 is a second block diagram of a bypass diode of the prior art in which a positive conductive substrate and a negative conductive substrate are connected by a bypass;

FIG. 3 is a schematic diagram of a module bypass diode in an embodiment of the present application;

FIG. 4 is a side view of a module bypass diode in an embodiment of the present application;

FIG. 5 is a schematic diagram of the front structure of the negative conductive bottom plate of the module bypass diode in an embodiment of the present application;

FIG. 6 is a schematic diagram of the front structure of the positive conductive back plane of a module bypass diode in an embodiment of the present application;

FIG. 7 is a schematic diagram of the back side structure of the positive conductive back plane of the module bypass diode in an embodiment of the present application;

FIG. 8 is a schematic diagram of the positive conductive backplane, the negative conductive backplane, and the chip connections in an embodiment of the present application;

FIG. 9 is a top view of a module bypass diode in an embodiment of the present application;

fig. 10 is a schematic diagram of a module bypass diode and junction box assembly in an embodiment of the present application.

Reference numerals illustrate: 1. an anode conductive base plate; 11. a positive electrode connection part; 12. a positive electrode pin; 13. a bump structure; 131. tin overflow holes; 2. a negative electrode conductive base plate; 21. a negative electrode connection portion; 22. a chip region; 23. a negative electrode pin; 3. a chip; 4. a jumper wire; 5. a plastic package body; 51. a box cover; 52. a box bottom; 6. the manifold is provided with holes; 7. a tin storage tank; 8. positioning holes; 9. a water-repellent tank; 101. and a junction box.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the embodiments of the present application will be described in detail below with reference to the accompanying drawings. However, as will be appreciated by those of ordinary skill in the art, in the various embodiments of the present application, numerous technical details have been set forth in order to provide a better understanding of the present application. However, the technical solutions claimed in the present application can be implemented without these technical details and with various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not be construed as limiting the specific implementation of the present application, and the embodiments may be combined with each other and cited with each other without contradiction.

A module bypass diode according to this embodiment is described in detail below with reference to fig. 3 to 6, and includes: the positive electrode conductive base plate 1, the negative electrode conductive base plate 2, the chip 3 and the plastic package body 5, wherein one end of the negative electrode conductive base plate 2 is provided with a negative electrode connecting portion 21, the other end of the negative electrode conductive base plate 2 is provided with a negative electrode pin 23, the negative electrode connecting portion 21 is provided with a chip area 22, the chip area 22 is used for placing a plurality of chips 3, and the negative electrode surface of the chips 3 is attached to the chip area 22 when placed, so that connection with the negative electrode conductive base plate 2 is realized. One end of the positive electrode conductive bottom plate 1 is provided with a positive electrode connecting part 11, the other end of the positive electrode conductive bottom plate 1 is provided with a positive electrode pin 12, and the positive electrode surface of the chip 3 is connected with the positive electrode connecting part 11 of the positive electrode conductive bottom plate 1. The connection area between the positive electrode conductive bottom plate 1 and the chip 3 and the connection area between the negative electrode conductive bottom plate 2 and the chip 3 are both arranged in the plastic package body 5, and the positive electrode conductive bottom plate 1 and the negative electrode conductive bottom plate 2 are connected to the chip 3 in a step-type manner.

Firstly, as the component current increases, the chip 3 size requirement of the module bypass diode also increases, and in this embodiment, the chip area 22 provided on the negative electrode connection portion 21 may be used for placing a plurality of chips 3, so as to satisfy the requirement setting that the chip 3 with a large size or more than two chips 3 satisfy the current requirement; secondly, the positive electrode conductive bottom plate 1 and the negative electrode conductive bottom plate 2 are connected to the chip 3 in a step-type manner, so that heat dissipation is facilitated; finally, the connection area of the anode conductive bottom plate 1 and the chip 3 and the connection area of the cathode conductive bottom plate 2 and the chip 3 are packaged by a plastic package body 5, thereby ensuring good air tightness and electrical property. Therefore, compared with the traditional bypass process, the module bypass diode in the embodiment is convenient to assemble, high in production efficiency, and not prone to generating bad phenomenon in welding, can meet the requirement of large current, and can improve the overall electrical performance and heat dissipation performance.

Referring to fig. 3 and 4, in this embodiment, it should be noted that the positive conductive base plate 1 and the negative conductive base plate 2 are not on the same plane, the positive conductive base plate 1 is higher than the negative conductive base plate 2, and in this embodiment, the positive conductive base plate 1 is disposed near the box cover 51 of the plastic package body 5, and the negative conductive base plate 2 is disposed near the box bottom 52 of the plastic package body 5. The arrangement in this way facilitates the realization of heat dissipation, several heat dissipation paths of this embodiment are described below:

for the heat dissipation path of the positive electrode conductive bottom plate 1, mainly according to a one-dimensional steady-state heat transfer formula phi= - λa (t/delta), when the area a is unchanged, the heat conductivity coefficient lambda of the sealant is unchanged, the temperature difference is unchanged, the thickness delta of the sealant, which is in contact with the bottom of the junction box 101, of the part of the positive electrode conductive bottom plate 1 outside the plastic package body 5 is reduced, the heat phi conducted per unit time is designed according to the principle that the thinner thickness of the sealant conducts the heat to the bottom of the junction box 101, the bottom of the junction box 101 conducts the heat to the component glass, and the heat of the component glass is taken away under the conditions of natural convection or forced convection. The part of the positive electrode conductive bottom plate 1 in the plastic package body 5 is close to the box cover 51 of the plastic package body 5, the heat of the positive electrode conductive bottom plate 1 is conducted to thinner sealant and then conducted to the box cover 51 of the plastic package body 5, and then the heat of the box cover 51 is taken away under natural convection or forced convection.

For the heat dissipation path of the negative electrode conductive bottom plate 2, when the area a is unchanged, the heat conduction coefficient lambda of the sealant is unchanged, the temperature difference is unchanged, the thickness delta of the sealant, which is in contact with the bottom of the junction box 101, of the part of the negative electrode conductive bottom plate 2 outside the plastic package body 5 is reduced, the heat conducted per unit time phi is designed according to the principle that the heat conducted per unit time is increased, the thinner sealant thickness conducts the heat to the bottom of the junction box 101, the bottom of the junction box 101 conducts the heat to the component glass, and the heat of the component glass is taken away under the conditions of natural convection or forced convection. The part of the negative electrode conductive bottom plate 2 positioned in the plastic package body 5 is close to the box bottom of the plastic package body 5, the thinner sealant thickness conducts heat to the box bottom of the plastic package body 5, the box bottom of the plastic package body 5 conducts heat to the junction box 101, the box bottom of the junction box 101 conducts heat to the component glass, and the heat of the component glass is taken away under the condition of natural convection or forced convection.

For the heat dissipation path of the plastic package body 5, heat is mainly conducted to the sealant, the sealant conducts the heat to the junction box 101, and then the heat of the junction box 101 is taken away by natural convection or forced convection.

In summary, in this embodiment, the heat dissipation performance of the module diode is improved by the heat dissipation paths of the three components of the positive conductive substrate 1, the negative conductive substrate 2 and the plastic package body 5.

Referring to fig. 3, 5 and 6, in this embodiment, it should be further noted that the size of the positive conductive substrate 1 and the negative conductive substrate 2 are the same, and the positive conductive substrate 1 and the negative conductive substrate 2 are symmetrically arranged with respect to the chip 3, and in this embodiment, the positive conductive substrate 1 and the negative conductive substrate 2 are made to have the same size and are symmetrically designed, so that unnecessary contact resistance, that is, heat generation source, can be reduced, and heat dissipation of the bypass diode of the module is uniform.

In one implementation, the positive conductive bottom plate 1 and the negative conductive bottom plate 2 are all L-shaped and are plate-shaped, and the positive conductive bottom plate 1, the negative conductive bottom plate 2 and the plastic package body 5 are integrally U-shaped when connected with each other, and the U-shaped is convenient for integrally installing the positive conductive bottom plate, the negative conductive bottom plate 2 and the plastic package body in the junction box 101, so that the heat dissipation area is enlarged, the heat dissipation capacity is improved, the stability of the module bypass diode to current is ensured under the working state, the electrical property is ensured, and the service life of the module bypass diode is prolonged.

In addition, in this embodiment, the positive electrode conductive bottom plate 1 and the negative electrode conductive bottom plate 2 are both in an L-shaped plate structure, and compared with the current large current bypass diode electric bottom plate in the industry which needs to be processed and bent, the processing cost of the positive electrode conductive bottom plate 1 and the negative electrode conductive bottom plate 2 in this embodiment is lower than that of the former because the positive electrode conductive bottom plate 1 and the negative electrode conductive bottom plate 2 do not need to be bent.

Referring to fig. 5 to 8, in this embodiment, it should be further noted that the chip 3, the negative electrode connection portion 21 and the positive electrode connection portion 11 are all connected by means of solder paste after being heated at high temperature and solidified and welded, the negative electrode connection portion 21 is pre-dotted with solder paste at the position of the chip area 22, the negative electrode surface of the chip 3 is attached to the solder paste, and the solder paste is used to be connected with the positive electrode connection portion 11 at the positive electrode surface of the chip 3. The positive electrode connecting part 11 is provided with a bump structure 13, when the positive electrode conductive bottom plate 1 and the chip 3 are connected, the convex surface end of the bump structure 13 is placed on the solder paste on the positive electrode surface of the chip 3, and after the solder paste is heated at high temperature, the solder paste is solidified and welded, so that the chip 3 is fixedly connected with the negative electrode connecting part 21 and the positive electrode connecting part 11.

In one example, the bump structure 13 is provided with a solder overflow hole 131 penetrating through the positive conductive substrate 1 at the center of the convex end, and the design of the solder overflow hole 131 can prevent the upper and lower surfaces of the chip 3 from being shorted when the solder paste is too much, and the main principle is that the solder overflow hole 131 can discharge the excessive solder paste from the solder overflow hole 131 upwards under the action of the downward pressing force of the positive conductive substrate 1. Therefore, the electrical stability of the bypass diode of the module can be ensured by the arrangement of the tin overflow hole 131.

In this embodiment, it should be further noted that, the positive electrode conductive base plate 1 and the negative electrode conductive base plate 2 are provided with a current collecting strip hole 6, a tin storage tank 7, and a positioning hole 8 for positioning a positioning column of the junction box, and the current collecting strip hole 6 penetrates through the positive electrode conductive base plate 1 or the negative electrode conductive base plate 2 in the thickness direction.

In this embodiment, it should also be noted that, the negative conductive bottom plate 2 is further provided with a waterproof groove 9, the waterproof groove 9 is disposed between the bus-bar hole 6 and the chip area 22, and the extending direction of the waterproof groove 9 is consistent with the length direction of the bus-bar hole 6, and when the air tightness of the plastic package body 5 is poor due to abnormal manufacturing process, the path length of the processing solution on the surface of the bypass diode penetrating into the chip 3 can be prolonged, so that the penetration of the processing solution into the chip 3 is prevented, and the electrical property is affected, and the electrical property stability of the bypass diode of the module can be ensured. Because the waterproof groove 9 is formed in the negative electrode conductive bottom plate 2, the permeation path of the treatment solution is prolonged, when the treatment solution continuously permeates inwards along the sealing position of the negative electrode conductive bottom plate 2 and the plastic package body 5, the treatment solution passes through the side wall of the waterproof groove 9, so that the permeation path of the treatment solution is increased, and the treatment solution possibly directly remains on the side wall of the waterproof groove 9 during permeation, and does not continuously permeate. Because the negative electrode conductive bottom plate 2 and the chip 3 are in surface contact, if the waterproof groove 9 is not opened, the treatment solution directly permeates to the negative electrode surface of the chip 3 and then forms a short circuit to the positive electrode surface through the insulating ring, so that the waterproof groove 9 is considered to be opened on the negative electrode conductive bottom plate 2 in the embodiment, and the occurrence of the situation can be avoided.

The arrangement of the bump structure 13 can ensure the electrical property stability of the module bypass diode, compared with the permeation path of the treatment solution on the anode conductive bottom plate 1, the bump structure 13 added on the anode conductive bottom plate 1 can increase the permeation path of the treatment solution, the chip 3 and the bump structure 13 are in point contact, the treatment solution needs to permeate from the bump structure 13 to the anode surface of the chip 3, then passes a certain distance from the anode surface of the chip 3, passes through the insulating ring and then forms a short circuit to the cathode surface, and therefore the bump structure 13 can prevent the treatment solution on the surface of the module bypass diode from permeating into the inside to affect the electrical property.

Referring to fig. 9 and 10, the shorter end of the positive conductive base plate 1 is set as the positive electrode connection portion 11, the shorter end of the negative conductive base plate 2 is set as the negative electrode connection portion 21, and when the plastic package body 5 plastic packages the connection areas of the positive electrode connection portion 11, the negative electrode connection portion 21 and the chip 3, the longer end of the positive conductive base plate 1 and the longer end of the negative conductive base plate 2 can be adapted according to the size of the junction box 101 as shown by the dotted line in fig. 9, so that the whole of the junction box is more properly installed in the junction box 101. If the width of the broken line portion in fig. 9 is widened according to the width of the junction box 101, the heat radiation area can be increased and the heat radiation capability can be improved.

Referring to fig. 5 to 7, in this embodiment, it should be further noted that, the positive electrode conductive base plate 1 and the negative electrode conductive base plate 2 are both formed into a desired shape by punching a raw material copper material, so as to be encapsulated, for example, the positive electrode conductive base plate 1 is formed into a bump structure 13, a solder overflow hole 131, a bus bar hole 6, a solder tank 7, and a positioning hole 8 by punching a raw material copper material, and is formed into a desired shape so as to be encapsulated; the negative electrode conductive base plate 2 is formed with a waterproof groove 9, a bus bar hole 6, a tin storage groove 7 and a positioning hole 8 by punching a raw material copper material by punching, and is shaped as needed for plastic packaging.

In one implementation, the module bypass diode in this embodiment eliminates the need for excessive die cutting pressure when the scrap copper product is removed, resulting in negligible stress on the chip 3, ensuring stable electrical performance of the module bypass diode.

The implementation principle of the embodiment is as follows: when in manufacture, firstly, solder paste is pre-spotted on the chip area 22 of the negative electrode conductive bottom plate 2, the negative electrode surface of the chip 3 is placed on the solder paste, and meanwhile, the solder paste is spotted on the positive electrode surface of the chip 3; then, the convex end of the bump structure 13 on the positive conductive bottom plate 1 is placed on the solder paste on the positive surface of the chip 3, and after high-temperature heating, the solder paste is solidified and welded to realize the connection and fixation of the chip 3 and the positive conductive bottom plate 1 and the negative conductive bottom plate 2; then the welded material is cleaned mainly for removing soldering flux and dirt on the surface of the chip 3, and the semi-finished product after cleaning is subjected to plastic packaging, so that the welding areas of the chip 3, the anode conductive bottom plate 1 and the cathode conductive bottom plate 2 are packaged to form a plastic packaging body 5; then the material after plastic package is baked at high temperature, so as to strengthen and shape the plastic package body 5 and release stress at the same time; then conducting strip surface treatment is carried out on the baked material, oxide is removed, and tin is plated on the anode conducting base plate 1 and the cathode conducting base plate 2 so as to facilitate welding; finally, the manufacture of the diode of the module is completed.

It is to be understood that the above-described embodiments of the present application are merely illustrative of or explanation of the principles of the present application and are in no way limiting of the present application. Accordingly, any modifications, equivalent substitutions, improvements, etc. made without departing from the spirit and scope of the present application are intended to be included within the scope of the present application. Furthermore, the appended claims are intended to cover all such changes and modifications that fall within the scope and boundary of the appended claims, or equivalents of such scope and boundary.

Claims (10)

1. A module bypass diode, comprising:

the device comprises a plastic package body (5), a chip (3), an anode conductive base plate (1) and a cathode conductive base plate (2);

one end of the negative electrode conductive bottom plate (2) is provided with a negative electrode connecting part (21), a chip area (22) for placing a plurality of chips (3) is arranged on the negative electrode connecting part (21), and the negative electrode surface of the chips (3) is placed on the chip area (22) and is connected with the negative electrode conductive bottom plate (2); the other end of the negative electrode conductive bottom plate (2) is provided with a negative electrode pin (23);

one end of the positive electrode conductive bottom plate (1) is provided with a positive electrode connecting part (11) and is connected with the positive electrode surface of the chip (3), and the other end of the positive electrode conductive bottom plate (1) is provided with a positive electrode pin (12);

the connection area of the positive electrode conductive bottom plate (1) and the chip (3) and the connection area of the negative electrode conductive bottom plate (2) and the chip (3) are arranged in the plastic package body (5);

the positive electrode conductive bottom plate (1) and the negative electrode conductive bottom plate (2) are connected to the chip (3) in a step mode.

2. The module bypass diode according to claim 1, characterized in that the positive conductive bottom plate (1) is arranged close to a box cover (51) of the plastic package body (5), and the negative conductive bottom plate (2) is arranged close to a box bottom (52) of the plastic package body (5).

3. The module bypass diode according to claim 1 or 2, characterized in that the positive conductive bottom plate (1) and the negative conductive bottom plate (2) are of the same size and are symmetrically arranged with respect to the chip (3).

4. A module bypass diode according to claim 3, characterized in that the positive conductive base plate (1) and the negative conductive base plate (2) are both L-shaped and have a plate-like structure, and the positive conductive base plate (1), the plastic package body (5) and the negative conductive base plate (2) are integrally U-shaped.

5. The module bypass diode according to claim 1, characterized in that the negative connection (21) is provided with solder paste on the chip area (22), and the negative side of the chip (3) is attached to the solder paste of the chip area (22); the positive electrode surface of the chip (3) is also provided with solder paste for connection with the positive electrode connection part (11).

6. The bypass diode according to claim 5, characterized in that a bump structure (13) is provided on the positive connection portion (11), and a convex end of the bump structure (13) is solidified and soldered with a position where a solder paste is provided on the positive surface of the chip (3).

7. The module bypass diode according to claim 6, characterized in that the bump structure (13) is provided with a solder overflow hole (131) penetrating the positive electrode conductive base plate (1) on the convex side, the solder overflow hole (131) being used for discharging excess solder paste from the solder overflow hole (131) under the downward pressure of the positive electrode conductive base plate (1).

8. The bypass diode according to claim 1, wherein the anode conductive base plate (1) and the cathode conductive base plate (2) are provided with a current collecting strip hole (6), a tin storage tank (7) and a positioning hole (8) for positioning a positioning column of the junction box (101), and the current collecting strip hole (6) penetrates through the thickness direction of the anode conductive base plate (1) or the cathode conductive base plate (2).

9. The module bypass diode according to claim 8, characterized in that a waterproof groove (9) is further provided on the negative conductive bottom plate (2), the waterproof groove (9) is provided between the bus bar hole (6) and the chip area (22), and the waterproof groove (9) is used for prolonging the path length of the treatment solution on the surface of the bypass diode penetrating to the chip (3).

10. The module bypass diode according to claim 1, characterized in that the positive conductive bottom plate (1) and the negative conductive bottom plate (2) are each formed into a desired shape by punching a raw material copper material by punching for plastic encapsulation.