CN114725075A - Power module terminal and power module - Google Patents

Power module terminal and power module Download PDF

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Publication number
CN114725075A
CN114725075A CN202210266397.3A CN202210266397A CN114725075A CN 114725075 A CN114725075 A CN 114725075A CN 202210266397 A CN202210266397 A CN 202210266397A CN 114725075 A CN114725075 A CN 114725075A
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CN
China
Prior art keywords
terminal
power module
copper layer
main body
lead
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Pending
Application number
CN202210266397.3A
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Chinese (zh)
Inventor
陈材
吕坚玮
任林浩
康勇
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Huazhong University of Science and Technology
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Huazhong University of Science and Technology
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Filing date
Publication date
Application filed by Huazhong University of Science and Technology filed Critical Huazhong University of Science and Technology
Priority to CN202210266397.3A priority Critical patent/CN114725075A/en
Publication of CN114725075A publication Critical patent/CN114725075A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Abstract

The invention discloses a power module terminal and a power module, belonging to the field of power electronic power modules, wherein the power module terminal comprises: the current lead-out structure comprises a main body part and a lead-out part extending outwards from the main body part, wherein two current lead-in holes are formed in the main body part, current lead-out holes are formed in the lead-out part, and a groove is formed between the current lead-out holes and the outer edge of the main body part. The power module includes: base plate, the last bridge power chipset of setting on the base plate and bridge power chipset, anodal copper layer and negative pole copper layer down still include: the power module comprises a positive electrode terminal and a negative electrode terminal, wherein the positive electrode terminal and the negative electrode terminal are the power module terminals, and the positive electrode terminal and the negative electrode terminal are respectively and electrically connected to a positive electrode copper layer and a negative electrode copper layer through two current introducing holes. The invention solves the problems of large deformation of a large-area terminal in the welding process and large residual stress of welding flux of a welding spot after welding.

Description

Power module terminal and power module
Technical Field
The invention belongs to the field of power electronic power modules, and particularly relates to a power module terminal and a power module.
Background
The power semiconductor is one of power electronic devices, and with the continuous development of power semiconductor technology, the power module technology has also been substantially improved and rapidly developed. In order to improve the efficiency of the power module, a higher switching frequency of the power module is required, and the conventional power module layout structure has a higher parasitic inductance, so that the power chip bears higher overvoltage in the switching process, and the risk of overvoltage breakdown of a power device is increased, so that the parasitic inductance is reduced by the power module so as to maintain stable operation.
In the prior art, the parasitic inductance of the terminal is reduced by increasing the area of the power terminal, but the large-area terminal has the problems of large deformation in the welding process, large residual stress of welding flux of a welding spot after welding, and large deformation of the terminal and large stress borne by the welding flux in the temperature cycle process, and influences the reliability of processing and working.
Disclosure of Invention
In view of the drawbacks and needs in the art, the present invention provides a power module terminal and a power module, which aim to reduce the deformation and stress of the terminal at the current introduction point during temperature cycling.
To achieve the above object, according to one aspect of the present invention, there is provided a power module terminal including: the current lead-out structure comprises a main body part and a lead-out part extending outwards from the main body part, wherein two current lead-in holes are formed in the main body part, current lead-out holes are formed in the lead-out part, and a groove is formed between the current lead-out holes and the outer edge of the main body part.
Further, the terminal areas on both sides of the groove are equal.
Further, the groove is stepped, and the current lead-out hole serves as a starting point of the step.
Furthermore, the main body part and the leading-out part are made of copper, copper silver plating or copper molybdenum alloy.
According to another aspect of the present invention, there is provided a power module, including a substrate, an upper bridge power chipset and a lower bridge power chipset disposed on the substrate, a positive copper layer and a negative copper layer, where the upper bridge power chipset and the lower bridge power chipset are electrically connected to the positive copper layer and the negative copper layer, respectively, and further including: the power module comprises a positive electrode terminal and a negative electrode terminal, wherein the positive electrode terminal and the negative electrode terminal are the power module terminal, and the positive electrode terminal and the negative electrode terminal are electrically connected to the positive electrode copper layer and the negative electrode copper layer respectively through two current introducing holes.
Further, the positive electrode terminal is laminated above the negative electrode terminal.
Further, the positive terminal and the negative terminal are made of copper, copper silver plating or copper molybdenum alloy.
Generally, by the above technical solution conceived by the present invention, the following beneficial effects can be obtained:
(1) according to the power module terminal and the power module, the groove is formed between the leading-out part of the terminal and the outer edge of the main body part, so that the large-area terminal can release deformation stress under high-temperature circulation, and the stress of the terminal to a current leading-in point is reduced.
(2) Preferably, the area of the terminals on both sides of the groove is equal, so that the current obtained by dividing the two parts of terminals can be balanced.
(3) Preferably, the grooves are in a step shape, so that the area of the terminals on two sides of the grooves is equal, and the currents obtained by the two parts of the terminals are balanced.
(4) Preferably, the material of the terminal is copper, copper silver plating or copper molybdenum alloy, so that parasitic inductance can be further reduced.
In summary, the invention solves the problems of large deformation of the large-area terminal in the welding process and large residual stress of the welding flux of the welding spot after welding.
Drawings
Fig. 1 is a schematic diagram of a terminal structure of a power module according to the present invention.
Fig. 2 is a schematic structural diagram of a power module without positive and negative terminals.
Fig. 3 is a schematic structural view of the power module terminal of the present invention used as a positive and negative terminal.
Fig. 4 is a schematic structural diagram of a power module provided in the present invention.
Fig. 5 is a prior art positive terminal solder joint solder stress profile.
Fig. 6 is a schematic diagram of deformation at a welding point of a positive terminal in the prior art.
Fig. 7 is a diagram showing a solder stress distribution of a positive terminal solder joint in the present invention.
Fig. 8 is a schematic view of deformation at the welding point of the positive terminal in the present invention.
The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein:
20-main body part, 21-leading-out part, 22 and 25 are current leading-in holes, 23-current leading-out holes, 24-grooves, 1-substrate, 2-positive copper layer, 3-upper bridge chip connecting piece, 4-upper bridge power chip group, 5-chip driving bonding wire, 6-upper bridge arm chip driving circuit copper layer, 7-positive terminal welding point, 8-negative copper layer, 9-lower bridge power chip group, 10-lower bridge chip connecting piece, 11-lower bridge arm chip driving circuit copper layer, 12-negative terminal welding point, 13-alternating current side copper layer, 14-alternating current side electrode terminal, 15-positive terminal and 16-negative terminal.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1, the power module terminal provided by the present invention mainly includes: the power module comprises a main body part 20 and a lead-out part 21 extending outwards from the main body part, wherein two current lead-in holes 22 and 25 are formed in the main body part 20 and used for leading in current through a welding point of the power module, a current lead-out hole 23 is formed in the lead-out part 21, a groove 24 is formed between the current lead-out hole 23 and the outer edge of the main body part and penetrates through the upper surface and the lower surface of the main body part and the lead-out part to divide a terminal into two parts.
The grooves are formed in the large-area terminals, so that low parasitic inductance is guaranteed, large pulling stress of the large-area terminals on welding spots can be reduced, deformation at high temperature and residual stress of welding flux after welding are reduced, and stress on the welding flux in the temperature circulation process is reduced.
Preferably, the terminal areas on both sides of the groove 24 are equal, that is, the terminal areas of the two portions divided by the groove are equal, so that the currents divided by the two portions of the terminal can be equalized.
Preferably, the groove 24 is formed in a step shape, and is bent from the current drawing hole 23 to an outer edge of the main body in a step shape, so as to equalize the currents obtained by the two terminals.
Preferably, the material of the main body 20 and the lead portion 21 is copper, copper silver plating, copper molybdenum alloy, or the like, to further reduce parasitic inductance.
As shown in fig. 2 and 3, the present invention provides a power module, including: the power supply comprises a substrate 1, wherein an upper bridge power chip set 4 and a lower bridge power chip set 9 are arranged on the substrate 1; the drain electrode of each chip in the upper bridge power chip group 4 is connected with the positive electrode copper layer 2, and the source electrode of each chip is connected with the alternating current side copper layer 13 through the upper bridge chip connecting piece 3; the drain electrode of each chip in the lower bridge power chip set 9 is connected with the alternating current side copper layer 13, and the source electrode of each chip is connected to the negative electrode copper layer 8 through a lower bridge chip connecting piece 10; the ac-side electrode terminal 14 is led out from the module ac-side copper layer 13. The chip driving bonding wires 5 connect the gates and the sources of the chips in the upper bridge power chip group 4 and the lower bridge power chip group 9 to the corresponding driving circuit copper layers respectively for driving the chips. Namely, the upper bridge power chip set 4 is connected with the upper bridge arm chip driving circuit copper layer 6 through a chip driving bonding wire 5, and the lower bridge power chip set 9 is connected with the lower bridge arm chip driving circuit copper layer 11 through the chip driving bonding wire 5; the positive terminal 15 is electrically connected with the positive copper layer 2 through the positive terminal welding point 7, and the negative terminal 16 is electrically connected with the negative copper layer 8 through the negative terminal welding point 12, wherein the positive terminal 15 and the negative terminal 16 are the power module terminals provided by the invention.
Specifically, the positive terminal 15 is electrically connected to the positive copper layer 2 through the positive terminal pad 7 via two current introduction holes 22, 25; the negative terminal 16 is electrically connected to the negative copper layer 8 through the negative terminal welding point 12 via two current lead-in holes 22, 25.
Further, as shown in fig. 4, the positive terminal 15 is above the negative terminal 16, and the parasitic inductance introduced by the terminals can be further reduced by adopting a stacked structure.
The invention aims at the prior art that the positive and negative terminals are not provided with grooves, the structure of the invention is used for simulation, simulation experiments are circulated in a temperature environment of 25-250 ℃, and the corresponding deformation and stress at the positive terminal are measured. The terminals of the invention are provided with stepped grooves, and the positive and negative terminals adopt a laminated structure, and simulation results are shown in fig. 5-8.
As shown in fig. 5, a stress distribution diagram of solder of a solder joint during temperature cycling at 25 ℃ -250 ℃ when the positive terminal in the prior art is not slotted, it can be seen through simulation experiments that the maximum stress at the solder joint of the positive terminal is 61.645 MPa.
As shown in fig. 6, which is a schematic diagram of the solder joint deformation corresponding to fig. 5, it can be seen through simulation experiments that the component of the terminal solder joint deformation in the vertical direction is 0.022 mm.
As shown in fig. 7, a stress distribution diagram of solder of a solder joint of the positive terminal of the present invention during temperature cycling at 25 ℃ to 250 ℃ is shown, and through simulation experiments, it can be seen that the maximum stress at the solder joint of the positive terminal is 39.28 MPa.
As shown in fig. 8, which is a schematic diagram of the solder joint deformation corresponding to fig. 7, it can be seen through simulation experiments that the component of the solder joint deformation of the terminal in the vertical direction is 0.0034 mm.
According to the simulation experiment, the terminal structure can reduce the deformation at high temperature and the residual stress of the welding flux after welding, and reduce the stress on the welding flux in the temperature circulation process. Meanwhile, the maximum stress of the structure can be reduced by more than 50% by adjusting experimental parameters.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (7)

1. A power module terminal, comprising: the LED lamp comprises a main body part (20) and a lead-out part (21) extending outwards from the main body part, wherein two current lead-in holes (22 and 25) are formed in the main body part (20), a current lead-out hole (23) is formed in the lead-out part (21), and a groove (24) is formed between the current lead-out hole (23) and the outer edge of the main body part.
2. The power module terminal according to claim 1, wherein the terminal areas on both sides of the groove (24) are equal.
3. The power module terminal as claimed in claim 2, wherein the groove (24) is stepped, and the current drawing hole (23) serves as a starting point of the step.
4. The power module terminal according to claim 2, wherein the material of the main body portion (20) and the lead-out portion (21) is copper, copper-silver-plated or copper-molybdenum alloy.
5. The utility model provides a power module, includes base plate (1), sets up last bridge power chipset (4) and lower bridge power chipset (9), anodal copper layer (2) and negative pole copper layer (8) on base plate (1), go up bridge power chipset (4) and lower bridge power chipset (9) respectively with anodal copper layer (2) and negative pole copper layer (8) electricity are connected, its characterized in that still includes: -a positive terminal (15) and a negative terminal (16), the positive terminal (15) and the negative terminal (16) both being a power module terminal according to any one of claims 1-4, the positive terminal (15) and the negative terminal (16) being electrically connected to the positive copper layer (2) and the negative copper layer (8) through respective two current lead-in holes (22, 25), respectively.
6. The power module according to claim 5, wherein the positive terminal (15) is laminated above the negative terminal (16).
7. A power module according to claim 5, characterized in that the material of the positive terminal (15) and the negative terminal (16) is copper, copper silver plating or copper molybdenum alloy.
CN202210266397.3A 2022-03-17 2022-03-17 Power module terminal and power module Pending CN114725075A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210266397.3A CN114725075A (en) 2022-03-17 2022-03-17 Power module terminal and power module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210266397.3A CN114725075A (en) 2022-03-17 2022-03-17 Power module terminal and power module

Publications (1)

Publication Number Publication Date
CN114725075A true CN114725075A (en) 2022-07-08

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Application Number Title Priority Date Filing Date
CN202210266397.3A Pending CN114725075A (en) 2022-03-17 2022-03-17 Power module terminal and power module

Country Status (1)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116130467A (en) * 2023-02-16 2023-05-16 华中科技大学 Symmetrical layout half-bridge power module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116130467A (en) * 2023-02-16 2023-05-16 华中科技大学 Symmetrical layout half-bridge power module
CN116130467B (en) * 2023-02-16 2023-11-10 华中科技大学 Symmetrical layout half-bridge power module

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