CN202004317U - High-power pulse semiconductor laser module - Google Patents
High-power pulse semiconductor laser module Download PDFInfo
- Publication number
- CN202004317U CN202004317U CN2011201223615U CN201120122361U CN202004317U CN 202004317 U CN202004317 U CN 202004317U CN 2011201223615 U CN2011201223615 U CN 2011201223615U CN 201120122361 U CN201120122361 U CN 201120122361U CN 202004317 U CN202004317 U CN 202004317U
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- China
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- heat sink
- semiconductor laser
- electrode slice
- electrode plate
- power pulse
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- Expired - Fee Related
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Abstract
The utility model provides a high-power pulse semiconductor laser module. The high-power pulse semiconductor laser module comprises single modules which are vertically connected together in series. Each single module comprises a heat sink, an insulating strip, an electrode plate and semiconductor laser chip bars, wherein the heat sink serves as an anode; the p surfaces of the semiconductor laser chip bars are downwards sintered on one side edge of the heat sink, and are flush with the heat sink; the electrode plate is arranged on the heat sink as a cathode; the insulating strip is arranged between the electrode plate and the heat sink; the electrode plate is connected with the cathodes of the semiconductor laser chip bars by bonding wires; corresponding fixing holes are formed on the electrode plate, the insulating strip and the heat sink; and the bonding wires on the electrode plate of the next single module are connected with the heat sink of the previous single module. The high-power pulse semiconductor laser module solves the problems of connection between the anodes and cathodes of the modules; the single modules can be independently tested and well burn-in screened, and work under low frequency pulse conditions to generate relatively less heat; and a micro-channel active radiation structure is not required to be arranged so as to greatly reduce the cost of the module.
Description
Technical field
The utility model relates to a kind of high power semiconductor lasers, belongs to semiconductor laser field.
Background technology
The high-power semiconductor laser array has a wide range of applications, potential bigger market and become the focus that each company of the industry competes for mutually.Yet the high-power semiconductor laser array exists a lot of problems at present, comprises power, efficient, consistency, stability and reliability etc. as low performance.And mostly used the microchannel heat dissipation technology in the high-power semiconductor laser array, and this technical price costliness, cost of manufacture is very high, and this has just improved the cost of laser greatly.Existing battle array has plenty of once sintered success, is not easy to guarantee sintering quality like this, and module becomes one once sintering finishes in addition, is not easy to change defective crust bar.
The utility model content
The utility model provides a kind of high power pulse semiconductor laser array that is easy to guarantee sintering quality, low cost of manufacture at the problems such as cost height that existing high-power semiconductor laser array has adopted the microchannel heat dissipation technology to exist.
High power pulse semiconductor laser array of the present utility model is by the following technical solutions:
This high power pulse semiconductor laser module comprises each single mode group that is cascaded up and down; That each single mode group comprises is heat sink, insulating trip, electrode slice and semiconductor laser chip crust bar, and heat sink as anodal, the p of semiconductor laser chip crust bar faces down sintering at a heat sink lateral edges and with heat sink concordant; Electrode slice as negative pole be installed in heat sink on, electrode slice and heat sink between be provided with insulating trip, electrode slice links to each other by the negative pole of bonding wire and semiconductor laser chip crust bar, electrode slice, insulating trip and heat sink on be equipped with the fixing hole of position correspondence; Bonding wire on the electrode slice of next single mode group links to each other with the heat sink of a last single mode group.Power that the series connection quantity of single mode group can be as required and the decision of the volume requirement of module.
The electrode slice of single mode group is provided with step, at the step place of electrode slice bonding wire.
Each semiconductor laser chip crust bar of single mode group is connected in parallel.
The utility model has solved the continuous problem of module both positive and negative polarity, need not add transition electrode and just can link to each other the module both positive and negative polarity.Single module can wear out in independent test, can well independently screen.And each module can be changed underproof module of life-span with the fixing series connection of screw.This encapsulation can singlely encapsulate for crust bar chip, helps improving sintering quality, and the every layer line battle array of laser can be tested separately, carries out burn-in screen again, changes defective linear array.The utility model is operated under the low-frequency pulse condition, and the heat of generation is less, has good thermal diffusivity owing to heat sink, so rely on passive heat radiation just can reach device heat radiation requirement fully.So just do not need to add microchannel active heat removal structure, greatly reduce the module cost.
Description of drawings
Accompanying drawing is the structural representation of single mode group in the utility model.
Among the figure: 1, heat sink, 2, insulating trip, 3, electrode slice, 4, the bonding wire step, 5, semiconductor laser chip crust bar, 6, fixing hole.
Embodiment
The utility model high power pulse semiconductor laser module is with the formation of connecting up and down of each single mode group.The structure of single mode group mainly comprises heat sink 1, insulating trip 2, electrode slice 3 and semiconductor laser chip crust bar 5 as shown in drawings, and heat sink 1 as anodal, is rectangle.The p of semiconductor laser crust bar chip 5 faces down sintering at a lateral edges of heat sink 1, and is concordant and heat sink 1, guarantees heat sink 1 light that neither can be in the light semiconductor laser crust bar chip 5, also can not allow chip 5 outstanding heat sink 1 influences dispel the heat.Electrode slice 3 which is provided with bonding wire step 4 as negative pole, and at bonding wire step 4 place's bonding wires of electrode slice 3, the negative pole of bonding wire and semiconductor laser chip crust bar 5 links to each other, and with the heat sink series mould set that is connected to form of last module.Electrode slice 3 is installed on heat sink 1 by screw, is provided with insulating trip 2 between the electrode slice 3 and heat sink 1.The effect that the step of electrode slice 3 exists is the welding gold thread that protection connects crust bar negative pole and electrode slice 3, avoids causing subsiding or scratching.Insulating trip 2 insulation spaced-apart electrodes sheets 3 and heat sink 1.Be equipped with the fixing hole 6 of position correspondence on electrode slice 3, the insulating trip 2 and heat sink 1, so that, go up module positive pole (heat sink 1) like this and link to each other with following module negative pole (electrode slice 3) with the vertical encapsulation of connecting up and down of a plurality of modules.The power as required and the volume requirement of module, the single mode group of series connection suitable quantity.
Claims (3)
1. a high power pulse semiconductor laser module comprises each single mode group that is cascaded up and down; It is characterized in that: each single mode group comprises heat sink, insulating trip, electrode slice and semiconductor laser chip crust bar, and is heat sink as anodal, and the p of semiconductor laser chip crust bar faces down sintering at a heat sink lateral edges, and with heat sink concordant; Electrode slice as negative pole be installed in heat sink on, electrode slice and heat sink between be provided with insulating trip, electrode slice links to each other by the negative pole of bonding wire and semiconductor laser chip crust bar, electrode slice, insulating trip and heat sink on be equipped with the fixing hole of position correspondence; Bonding wire on the electrode slice of next single mode group links to each other with the heat sink of a last single mode group.
2. high power pulse semiconductor laser module according to claim 1, it is characterized in that: the electrode slice of described single mode group is provided with step, at the step place of electrode slice bonding wire.
3. high power pulse semiconductor laser module according to claim 1 is characterized in that: each semiconductor laser chip crust bar of described single mode group is connected in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201223615U CN202004317U (en) | 2011-04-25 | 2011-04-25 | High-power pulse semiconductor laser module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201223615U CN202004317U (en) | 2011-04-25 | 2011-04-25 | High-power pulse semiconductor laser module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202004317U true CN202004317U (en) | 2011-10-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201223615U Expired - Fee Related CN202004317U (en) | 2011-04-25 | 2011-04-25 | High-power pulse semiconductor laser module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202004317U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103368065A (en) * | 2012-03-29 | 2013-10-23 | 山东华光光电子有限公司 | Solid state laser device array packaging structure and solid state laser device array packaging method |
| CN104078834A (en) * | 2013-03-29 | 2014-10-01 | 山东浪潮华光光电子股份有限公司 | Double-sided packaging method of high-power laser bar and sintering fixture used for high-power laser bar packaging |
| CN112859258A (en) * | 2021-02-09 | 2021-05-28 | 北京凯普林光电科技股份有限公司 | Integrally designed laser radar bar optical fiber coupling module |
-
2011
- 2011-04-25 CN CN2011201223615U patent/CN202004317U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103368065A (en) * | 2012-03-29 | 2013-10-23 | 山东华光光电子有限公司 | Solid state laser device array packaging structure and solid state laser device array packaging method |
| CN103368065B (en) * | 2012-03-29 | 2015-08-19 | 山东华光光电子有限公司 | A kind of encapsulating structure of solid-state laser array and method for packing thereof |
| CN104078834A (en) * | 2013-03-29 | 2014-10-01 | 山东浪潮华光光电子股份有限公司 | Double-sided packaging method of high-power laser bar and sintering fixture used for high-power laser bar packaging |
| CN104078834B (en) * | 2013-03-29 | 2018-01-02 | 山东华光光电子股份有限公司 | The method and its encapsulation sintering fixture of a kind of high power laser bar bar double-faced packaging |
| CN112859258A (en) * | 2021-02-09 | 2021-05-28 | 北京凯普林光电科技股份有限公司 | Integrally designed laser radar bar optical fiber coupling module |
| CN112859258B (en) * | 2021-02-09 | 2022-05-24 | 北京凯普林光电科技股份有限公司 | Integrally designed laser radar bar optical fiber coupling module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANDONG INSPUR HUAGUANG OPTOELECTRONICS CO., LTD. Free format text: FORMER OWNER: SHANDONG HUAGUANG PHOTOELECTRONIC CO., LTD. Effective date: 20120411 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 250101 JINAN, SHANDONG PROVINCE TO: 261061 WEIFANG, SHANDONG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20120411 Address after: 261061 Weifang high tech Zone, Jin Road, No. 9, No. Patentee after: Shandong Inspur Huaguang Optoelectronics Co., Ltd. Address before: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Patentee before: Shandong Huaguang Photoelectronic Co., Ltd. |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111005 Termination date: 20140425 |