CN212517182U

CN212517182U - Quick radiating semiconductor MOS field effect transistor

Info

Publication number: CN212517182U
Application number: CN202021730400.5U
Authority: CN
Inventors: 张开航; 马云洋
Original assignee: Suzhou Qinlv Electronic Technology Co ltd
Current assignee: Suzhou Qinlv Electronic Technology Co ltd
Priority date: 2020-08-18
Filing date: 2020-08-18
Publication date: 2021-02-09
Anticipated expiration: 2030-08-18

Abstract

The utility model discloses a fast heat dissipation type semiconductor MOS field effect transistor, wherein a first strip-shaped groove, a second strip-shaped groove and a third groove are arranged on one surface of a ceramic heat conduction body, and a first conductive strip, a second conductive strip and a conductive block are respectively filled in the first strip-shaped groove, the second strip-shaped groove and the third groove; the MOSFET chip is provided with a source region, a drain region and a gate region, the MOSFET chip is arranged on the ceramic heat conduction body, and the source region, the drain region and the gate region are respectively and electrically connected with the first conductive strip, one end of the conductive block and the second conductive strip; the ceramic heat conducting body is provided with a heat radiating plate extending out of the end face of the epoxy packaging body, and the ceramic heat conducting body in the epoxy packaging body is provided with at least one through hole. The utility model discloses power MOS's thermal resistance has been reduced to be favorable to further improving the power of device, also avoided the layering of ceramic heat conduction body and epoxy packaging body, prevent that steam from getting into inside the device.

Description

Quick radiating semiconductor MOS field effect transistor

Technical Field

The utility model relates to a semiconductor device technical field especially relates to a quick heat dissipation type semiconductor MOS field effect transistor.

Background

In the prior art, a lot of packaging structures related to field effect transistors, generally, a high-current packaging structure is to weld a field effect transistor directly on a circuit board, then fix the circuit board on a corresponding conductive base, and finally perform corresponding packaging. By adopting the field effect transistor packaging structure with the structure, the field effect transistor has higher working temperature and poor heat dissipation effect, so that welding spots are easily softened under the action of high temperature, and the field effect transistor and a circuit board are in poor contact to influence the work.

Disclosure of Invention

The utility model aims at providing a quick heat dissipation type semiconductor MOS field effect transistor, this quick heat dissipation type semiconductor MOS field effect transistor have reduced power MOS's thermal resistance to be favorable to further improving the power of device, also avoided the layering of ceramic heat conduction body and epoxy packaging body, prevent that steam from getting into inside the device.

In order to achieve the above purpose, the utility model adopts the technical scheme that: a fast heat dissipation type semiconductor MOS field effect transistor comprises: the MOSFET chip, the ceramic heat-conducting body, the source pin, the drain pin and the grid pin are positioned in the epoxy packaging body, and the source pin, the drain pin and the grid pin extend out of the epoxy packaging body;

a first strip-shaped groove, a second strip-shaped groove and a third groove are formed in one surface of the ceramic heat conduction body, and a first conductive strip, a second conductive strip and a conductive block are respectively filled in the first strip-shaped groove, the second strip-shaped groove and the third groove;

the MOSFET chip is provided with a source region, a drain region and a gate region, the MOSFET chip is arranged on the ceramic heat conduction body, and the source region, the drain region and the gate region are respectively and electrically connected with the first conductive strip, one end of the conductive block and the second conductive strip;

the source electrode pin is electrically connected with the first conductive strip, the drain electrode pin is electrically connected with the other end of the conductive block, and the grid electrode pin is electrically connected with the second conductive strip;

the ceramic heat conduction body is provided with a heat dissipation plate extending out of the end face of the epoxy packaging body, and the ceramic heat conduction body in the epoxy packaging body is provided with at least one through hole.

The further improved scheme in the technical scheme is as follows:

1. in the above scheme, the number of the through holes of the ceramic heat conduction body is 2.

2. In the above scheme, the first conductive strips and the second conductive strips are arranged in parallel.

3. In the above scheme, the source region and the drain region of the MOSFET chip are electrically connected to the first conductive strip and the second conductive strip respectively through conductive wires.

Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:

1. the utility model discloses quick heat dissipation type semiconductor MOS field effect transistor, its MOSFET chip is installed on ceramic heat conduction body, and this source region, drain electrode region and gate region are connected with first conducting strip, conducting block one end and second conducting strip electricity respectively, have reduced the thermal resistance of power MOS to be favorable to further improving the power of device, the high-power of power MOS, the advantage of low-power consumption has fully been given play to; in addition, the ceramic heat conducting body is provided with a heat radiating plate extending out of the end face of the epoxy packaging body, and the ceramic heat conducting body in the epoxy packaging body is provided with at least one through hole, so that the heat diffusion is further improved, the layering of the ceramic heat conducting body and the epoxy packaging body is also avoided, and water vapor is prevented from entering the device.

2. The utility model discloses quick heat dissipation type semiconductor MOS field effect transistor, open on its pottery heat conduction body surface has first bar groove, second bar groove and third recess, and this first bar groove, second bar groove and third recess intussuseption are filled respectively has first busbar, second busbar and conducting block, and the source electrode pin is connected with first busbar electricity, and the drain electrode pin is connected with the conducting block other end electricity, the grid electrode pin is connected with second busbar electricity, and existing volume that is favorable to further reducing the device also reduces the figure of part in the device, because heat dissipation area and body are a whole simultaneously, have improved device overall structure stability.

Drawings

Fig. 1 is a schematic structural diagram of the fast heat dissipation type semiconductor MOS field effect transistor of the present invention.

In the above drawings: 1. an epoxy package; 2. a MOSFET chip; 21. a source region; 22. a MOSFET chip; 23. a MOSFET chip; 3. a ceramic thermally conductive body; 31. a first bar-shaped groove; 32. a second strip-shaped groove; 33. a third groove; 4. a source pin; 5. a drain pin; 6. a gate pin; 71. a first conductive strip; 72. a second conductive strip; 73. a conductive block; 8. a conductive wire; 9. a heat dissipation plate; 10. and a through hole.

Detailed Description

Example 1: a fast heat dissipation type semiconductor MOS field effect transistor comprises: the semiconductor device comprises a MOSFET chip 2, a ceramic heat-conducting body 3, a source pin 4, a drain pin 5 and a grid pin 6 which are positioned in an epoxy packaging body 1, wherein the source pin 4, the drain pin 5 and the grid pin 6 extend outwards from the epoxy packaging body 1;

a first strip-shaped groove 31, a second strip-shaped groove 32 and a third groove 33 are formed in one surface of the ceramic heat conducting body 3, and a first conductive strip 71, a second conductive strip 72 and a conductive block 73 are respectively filled in the first strip-shaped groove 31, the second strip-shaped groove 32 and the third groove 33;

the MOSFET chip 2 is provided with a source region 21, a drain region 22 and a gate region 23, the MOSFET chip 2 is mounted on the ceramic heat conducting body, and the source region 21, the drain region 22 and the gate region 23 are electrically connected with the first conductive strip 71, one end of the conductive block 73 and the second conductive strip 72 respectively;

the source pin 4 is electrically connected to the first conductive strip 71, the drain pin 5 is electrically connected to the other end of the conductive block 73, and the gate pin 6 is electrically connected to the second conductive strip 72;

the ceramic heat conducting body 3 is provided with a heat dissipation plate 9 extending from the end face of the epoxy packaging body 1, and the ceramic heat conducting body 3 positioned in the epoxy packaging body 1 is provided with at least one through hole 10.

The first conductive strips 71 and the second conductive strips 72 are arranged in parallel.

Example 2: a fast heat dissipation type semiconductor MOS field effect transistor comprises: the semiconductor device comprises a MOSFET chip 2, a ceramic heat-conducting body 3, a source pin 4, a drain pin 5 and a grid pin 6 which are positioned in an epoxy packaging body 1, wherein the source pin 4, the drain pin 5 and the grid pin 6 extend outwards from the epoxy packaging body 1;

The source region 21 and the drain region 22 of the MOSFET chip 2 are electrically connected to the first conductive strip 71 and the second conductive strip 72 respectively through the conductive line 8.

The number of the through holes 10 of the ceramic heat-conducting body 3 is 2.

When the rapid heat dissipation type semiconductor MOS field effect transistor is adopted, the MOSFET chip is arranged on the ceramic heat conduction body, and the source region, the drain region and the gate region are respectively and electrically connected with the first conductive strip, one end of the conductive block and the second conductive strip, so that the thermal resistance of the power MOS is reduced, the power of the device is further improved, and the advantages of high power and low power consumption of the power MOS are fully exerted; the ceramic heat conducting body is provided with a first strip-shaped groove, a second strip-shaped groove and a third groove on one surface, a first conductive strip, a second conductive strip and a conductive block are respectively filled in the first strip-shaped groove, the second strip-shaped groove and the third groove, a source electrode pin is electrically connected with the first conductive strip, a drain electrode pin is electrically connected with the other end of the conductive block, and a grid electrode pin is electrically connected with the second conductive strip, so that the size of the device is further reduced, the number of components in the device is also reduced, and meanwhile, the whole structure stability of the device is improved as the heat radiating area and the body are integrated; in addition, the lamination of the ceramic heat-conducting body and the epoxy packaging body is avoided, and water vapor is prevented from entering the device.

The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.

Claims

1. A fast heat dissipation type semiconductor MOS field effect transistor is characterized in that: the method comprises the following steps: the MOSFET chip (2), the ceramic heat-conducting body (3), the source pin (4), the drain pin (5) and the grid pin (6) are positioned in the epoxy packaging body (1), and the source pin (4), the drain pin (5) and the grid pin (6) extend outwards from the epoxy packaging body (1);

a first strip-shaped groove (31), a second strip-shaped groove (32) and a third groove (33) are formed in one surface of the ceramic heat conduction body (3), and a first conductive strip (71), a second conductive strip (72) and a conductive block (73) are respectively filled in the first strip-shaped groove (31), the second strip-shaped groove (32) and the third groove (33);

the MOSFET chip (2) is provided with a source region (21), a drain region (22) and a gate region (23), the MOSFET chip (2) is mounted on the ceramic heat conduction body, and the source region (21), the drain region (22) and the gate region (23) are electrically connected with the first conductive strip (71), one end of the conductive block (73) and the second conductive strip (72) respectively;

the source pin (4) is electrically connected with the first conductive strip (71), the drain pin (5) is electrically connected with the other end of the conductive block (73), and the gate pin (6) is electrically connected with the second conductive strip (72);

the ceramic heat conduction body (3) is provided with a heat dissipation plate (9) extending out of the end face of the epoxy packaging body (1), and the ceramic heat conduction body (3) located in the epoxy packaging body (1) is provided with at least one through hole (10).

2. The fast heat dissipation type semiconductor MOS fet as recited in claim 1, wherein: the first conductive strips (71) and the second conductive strips (72) are arranged in parallel.

3. The fast heat dissipation type semiconductor MOS fet as recited in claim 1, wherein: the source region (21) and the drain region (22) of the MOSFET chip (2) are respectively and electrically connected with the first conductive strip (71) and the second conductive strip (72) through conductive wires (8).

4. The fast heat dissipation type semiconductor MOS fet as recited in claim 1, wherein: the number of the through holes (10) of the ceramic heat conduction body (3) is 2.