CN208623537U - A kind of low-voltage, high-current Mosfet power module - Google Patents
A kind of low-voltage, high-current Mosfet power module Download PDFInfo
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- CN208623537U CN208623537U CN201821369046.0U CN201821369046U CN208623537U CN 208623537 U CN208623537 U CN 208623537U CN 201821369046 U CN201821369046 U CN 201821369046U CN 208623537 U CN208623537 U CN 208623537U
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- heat
- release hole
- heat release
- radiating substrate
- substrate body
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Abstract
The utility model discloses a kind of low-voltage, high-current Mosfet power modules, it is related to low-voltage, high-current energy conversion technique field；The grid and source electrode of each Mosfet chip are connect with driving protection circuit plate；The heat release hole one for being internally provided with several lateral direction penetratings of heat-radiating substrate body, heat-radiating substrate body is internally provided with several heat release holes two penetrated through in the front-back direction, and heat release hole one is connected to heat release hole two, the junction of heat release hole one and heat release hole two is provided perpendicular to the heat release hole three of heat release hole one, and the upper end of heat release hole three and heat-radiating substrate body penetrate through, the upper end of the heat-radiating substrate body is fixedly installed with upper cover body, and heat dissipation plate body is provided in the middle part of upper cover body；The utility model improves thermal diffusivity, and is less prone to localized hyperthermia when in use and the phenomenon that burn out, easy to operate, saves the time；It is able to achieve Fast Installation, and whole thermal diffusivity is high, extends service life.
Description
Technical field
The utility model belongs to low-voltage, high-current energy conversion technique field, and in particular to a kind of low-voltage, high-current Mosfet
Power module.
Background technique
In current industrial low-voltage, high-current output rectifier using upper, for exporting distillation, output commutates device
Generally use several power devices such as Schottky diode, fast recovery diode, silicon-controlled.These devices are all pressure drop
Property device, electric current flow through the device and then generate fixed pressure drop, and pressure drop size just determines the power consumption size of the device.But it is existing
There are disclosed low-voltage, high-current Mosfet power module, Patent No. 201621024060.8, by the way that component to be mounted on
Full copper heat dissipating substrate can be realized heat dissipation, but speed is slow when radiating, while the phenomenon that be easy to appear localized hyperthermia, lead
It is caused to be easy to burn out.
Utility model content
Speed is slow when to solve existing heat dissipation, while the phenomenon that be easy to appear localized hyperthermia, causes what it was easy to burn out to ask
Topic；The purpose of this utility model is to provide a kind of low-voltage, high-current Mosfet power modules.
A kind of low-voltage, high-current Mosfet power module of the utility model, it include driving protection circuit plate, ceramic wafer,
Mosfet chip, upper cover body, heat-radiating substrate body；Several Mosfet chips are connected in parallel to form Mosfet chip array two-by-two；It drives
Dynamic protection circuit plate and ceramic wafer are each attached on heat-radiating substrate body, and Mosfet chip array is fixed on ceramic wafer, and
The drain electrode of each Mosfet chip is welded with ceramic wafer in Mosfet chip, the grid of each Mosfet chip and source
Extremely it is connect with driving protection circuit plate；It is characterized by: the heat dissipation for being internally provided with several lateral direction penetratings of heat-radiating substrate body
Kong Yi, heat-radiating substrate body are internally provided with several heat release holes two penetrated through in the front-back direction, and heat release hole one and heat release hole two
The junction of connection, heat release hole one and heat release hole two is provided perpendicular to the heat release hole three of heat release hole one, and heat release hole three is upper
End is penetrated through with heat-radiating substrate body, and the upper end of the heat-radiating substrate body is fixedly installed with upper cover body, is provided in the middle part of upper cover body scattered
Hot plate body.
Preferably, the heat dissipation plate body is corrugated heat sink.
Preferably, being provided with the insulating film with hole slot on the heat-radiating substrate body.
Preferably, the bottom of the heat-radiating substrate body is fixedly installed with felt pad.
Compared with prior art, the utility model has the following beneficial effects:
One, the phenomenon that improving thermal diffusivity, and being less prone to localized hyperthermia when in use and burn out, it is easy to operate, it saves
Time；
Two, it is able to achieve Fast Installation, and whole thermal diffusivity is high, extends service life.
Detailed description of the invention
The present invention is described in detail by the following detailed description and drawings for ease of explanation,.
Fig. 1 is the structural schematic diagram of the utility model；
Fig. 2 is the top view of heat-radiating substrate body in the utility model；
Fig. 3 is the structural schematic diagram of upper cover body in the utility model.
In figure: 1- drives protection circuit plate；2- ceramic wafer；3-Mosfet chip；4- upper cover body；5- heat-radiating substrate body；4-
1- heat dissipation plate body；5-1- heat release hole one；5-2- heat release hole two；5-3- heat release hole three.
Specific embodiment
To make the objectives, technical solutions and advantages of the present invention clearer, below by shown in the accompanying drawings
Specific embodiment describes the utility model.However, it should be understood that these descriptions are merely illustrative, and it is not intended to limit this reality
With novel range.In addition, in the following description, descriptions of well-known structures and technologies are omitted, to avoid unnecessarily mixing
Confuse the concept of the utility model.
Here, it should also be noted that, in order to avoid having obscured the utility model because of unnecessary details, in the accompanying drawings
It illustrate only the structure and/or processing step closely related with scheme according to the present utility model, and be omitted practical with this
The little other details of new relationship.
As shown in Figure 1, present embodiment uses following technical scheme: it includes driving protection circuit plate 1, ceramic wafer
2, Mosfet chip 3, upper cover body 4, heat-radiating substrate body 5；Several Mosfet chips 3 are connected in parallel to form Mosfet chip two-by-two
Array；Driving protection circuit plate 1 and ceramic wafer 2 are each attached on heat-radiating substrate body 5, and Mosfet chip array is fixed on ceramics
On plate 2, and the drain electrode of each Mosfet chip 3 is welded with ceramic wafer in Mosfet chip, each Mosfet chip 3
Grid and source electrode with driving protection circuit plate connect；Drive protection circuit plate that there are multiple circuits；It is Mosfet chip
Array, which provides, is isolated positive back-pressure driving signal, can also provide temperature protection failure feedback；
It is characterized by: as shown in Fig. 2, one 5- of heat release hole for being internally provided with several lateral direction penetratings of heat-radiating substrate body 5
1, one 5-1 of heat release hole can be realized lateral heat dissipation, and heat release hole two can be realized front and back heat dissipation, and in heat dissipation, cooperation is hung down
Straight heat release hole three radiate for component, can improve whole thermal diffusivity, and heat-radiating substrate body 5 is internally provided with number
It a two 5-2 of heat release hole penetrated through in the front-back direction, and one 5-1 of heat release hole is connected to two 5-2 of heat release hole, one 5-1 of heat release hole and dissipates
The junction of two 5-2 of hot hole is provided perpendicular to three 5-3 of heat release hole of heat release hole one, and the upper end of three 5-3 of heat release hole and heat dissipation
Substrate body 5 penetrates through.
As shown in figure 3, the upper end of the heat-radiating substrate body 5 is fixedly installed with upper cover body 4, the middle part of upper cover body 4 is provided with
Radiate plate body 4-1, and heat sink physical efficiency is the heat dissipation of component upper end, and is able to achieve quick heat-collector, and heat dissipation plate body is contacted with the external world
It is able to achieve quick heat exchange.
Further, the heat dissipation plate body 4-1 is corrugated heat sink.
Further, the insulating film with hole slot is provided on the heat-radiating substrate body 5.
Further, the bottom of the heat-radiating substrate body 5 is fixedly installed with felt pad.
The working principle of the present embodiment is as follows: when in use, the fixation of component is realized by heat-radiating substrate body 5,
And after fixing, by heat-radiating substrate body realize rapid cooling, and heat-radiating substrate body heat dissipation when, by way of natural heat dissipation into
Row is interconnected to realize rapid cooling by heat release hole one, heat release hole two, heat release hole three when radiating, can save heat dissipation
Time, and thermal diffusivity is improved, the heat release hole of three perforations can radiate from multiple directions, improve whole efficiency, save
It saves time, it is easy to operate, and when in use, rapid cooling is realized by heat dissipation plate body 4-1, improves thermal diffusivity, and can prolong
Long life, the phenomenon that being less prone to localized hyperthermia.
Claims (4)
1. a kind of low-voltage, high-current Mosfet power module, it include driving protection circuit plate, ceramic wafer, Mosfet chip, on
Lid, heat-radiating substrate body；Several Mosfet chips are connected in parallel to form Mosfet chip array two-by-two；Drive protection circuit plate and
Ceramic wafer is each attached on heat-radiating substrate body, and Mosfet chip array is fixed on ceramic wafer, and each in Mosfet chip
The drain electrode of Mosfet chip with ceramic wafer weld, the grid and source electrode of each Mosfet chip with driving protection circuit plate
Connection；It is characterized by: the heat release hole one for being internally provided with several lateral direction penetratings of heat-radiating substrate body, the inside of heat-radiating substrate body
Several heat release holes two penetrated through in the front-back direction are provided with, and heat release hole one is connected to heat release hole two, heat release hole one and heat release hole
Two junction is provided perpendicular to the heat release hole three of heat release hole one, and the upper end of heat release hole three and heat-radiating substrate body penetrate through, institute
The upper end for stating heat-radiating substrate body is fixedly installed with upper cover body, and heat dissipation plate body is provided in the middle part of upper cover body.
2. a kind of low-voltage, high-current Mosfet power module according to claim 1, it is characterised in that: the heat dissipation plate body
For corrugated heat sink.
3. a kind of low-voltage, high-current Mosfet power module according to claim 1, it is characterised in that: the heat-radiating substrate
The insulating film with hole slot is provided on body.
4. a kind of low-voltage, high-current Mosfet power module according to claim 1, it is characterised in that: the heat-radiating substrate
The bottom of body is fixedly installed with felt pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821369046.0U CN208623537U (en) | 2018-08-23 | 2018-08-23 | A kind of low-voltage, high-current Mosfet power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821369046.0U CN208623537U (en) | 2018-08-23 | 2018-08-23 | A kind of low-voltage, high-current Mosfet power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208623537U true CN208623537U (en) | 2019-03-19 |
Family
ID=65716430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821369046.0U Active CN208623537U (en) | 2018-08-23 | 2018-08-23 | A kind of low-voltage, high-current Mosfet power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208623537U (en) |
-
2018
- 2018-08-23 CN CN201821369046.0U patent/CN208623537U/en active Active
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