CN209747503U - An integrated power module radiator - Google Patents
An integrated power module radiator Download PDFInfo
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- CN209747503U CN209747503U CN201920193272.6U CN201920193272U CN209747503U CN 209747503 U CN209747503 U CN 209747503U CN 201920193272 U CN201920193272 U CN 201920193272U CN 209747503 U CN209747503 U CN 209747503U
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Abstract
本实用新型属于电器设备领域,具体涉及一种一体化电力模块散热器,包括IGBT模块和散热器本体,所述的IGBT模块底板位于所述的散热器本体上方,所述的散热器本体下方设有散热片,所述的IGBT模块与所述的散热器本体之间设有镀铜区,这种一体化电力模块散热器,可大幅降低热阻,从而提高效能,使用的IGBT或MOS等功率芯片,可降低功率使用,进而降低成本,安全系数更高。
The utility model belongs to the field of electrical equipment, and in particular relates to an integrated power module radiator, which includes an IGBT module and a radiator body. The bottom plate of the IGBT module is located above the radiator body. There is a heat sink, and there is a copper-plated area between the IGBT module and the heat sink body. This integrated power module heat sink can greatly reduce thermal resistance, thereby improving performance. The power used such as IGBT or MOS Chips, which can reduce power usage, thereby reducing costs, and have a higher safety factor.
Description
技术领域technical field
本实用新型属于电器设备领域,具体涉及一种一体化电力模块散热器。The utility model belongs to the field of electrical equipment, in particular to an integrated power module radiator.
背景技术Background technique
散热器多用于电器设备中,防止电器设备在使用过程中由于散热不良造成电器损坏,现有的散热器通过导热硅脂将模块与散热器连接。其中的热阻非常高,大部分的功率浪费在热消耗之上,为了将器件(模块)所产生的热,尽快传送到散热器上,需要用很大的散热器,造成发热器件与散热器的温差,以达到吸收热量的目的,散热效率较低。Heat sinks are mostly used in electrical equipment to prevent electrical equipment from being damaged due to poor heat dissipation during use. The existing heat sink connects the module to the heat sink through thermal conductive silicone grease. The thermal resistance is very high, and most of the power is wasted on heat consumption. In order to transfer the heat generated by the device (module) to the radiator as soon as possible, a large radiator is required, causing the heating device and the radiator In order to achieve the purpose of absorbing heat, the heat dissipation efficiency is low.
实用新型内容Utility model content
本实用新型的目的是提供一种一体化电力模块散热器,可大幅降低热阻,从而提高效能,使用的IGBT或MOS等功率芯片,可降低功率使用,进而降低成本,安全系数更高。The purpose of this utility model is to provide an integrated power module heat sink, which can greatly reduce thermal resistance, thereby improving performance, using power chips such as IGBT or MOS, which can reduce power usage, thereby reducing costs, and having a higher safety factor.
为了实现以上目的,本实用新型采用的技术方案为:一种一体化电力模块散热器,包括IGBT模块和散热器本体,所述的IGBT模块底板位于所述的散热器本体上方,所述的散热器本体下方设有散热片,所述的IGBT模块与所述的散热器本体之间设有镀铜区。In order to achieve the above purpose, the technical solution adopted by the utility model is: an integrated power module radiator, including an IGBT module and a radiator body, the bottom plate of the IGBT module is located above the radiator body, and the heat dissipation A heat sink is provided under the radiator body, and a copper plating area is provided between the IGBT module and the radiator body.
进一步的,所述的IGBT模块下方设有连接底板,所述的连接底板上设有安装孔,所述的散热器本体上设有与所述的安装孔对应的固定孔。Further, a connecting bottom plate is provided under the IGBT module, and mounting holes are provided on the connecting bottom plate, and fixing holes corresponding to the mounting holes are provided on the heat sink body.
进一步的,所述的镀铜区大小形状与所述的IGBT模块底面相同。Further, the size and shape of the copper plating area is the same as that of the bottom surface of the IGBT module.
进一步的,所述的IGBT模块焊接于镀铜区上。Further, the IGBT module is welded on the copper plating area.
进一步的,所述的镀铜区的铜采用冷焊或者热焊技术焊接到散热器本体上。Further, the copper in the copper plating area is welded to the heat sink body by cold welding or hot welding technology.
进一步的,所述的散热片有多个,之间距离为3-5mm。Further, there are multiple heat sinks, and the distance between them is 3-5mm.
本实用新型的技术效果在于:这种一体化电力模块散热器,将模块焊接到散热器上,可大幅降低热阻,从而提高效能,使用的IGBT或MOS等功率芯片,可降低功率使用,进而降低成本,安全系数更高,使用冷焊技术,将铜喷洒在特定的位置上,正适合模块“复铜陶瓷基板”(DBC),或其他模块所使用可焊接到铜散热器的底板,因此,模块焊接的定位精准(有标的),良率高。在指定位置喷洒铜质材料,也可以大幅降低成本。The technical effect of the utility model is that: the integrated power module radiator, the module can be welded to the radiator, the thermal resistance can be greatly reduced, thereby improving the efficiency, and the power chips such as IGBT or MOS used can reduce the power usage, and further Lower cost, higher safety factor, using cold welding technology, spraying copper on a specific position, just suitable for the module "copper complex ceramic substrate" (DBC), or the bottom plate used by other modules that can be welded to the copper heat sink, so , The positioning of the module welding is accurate (marked), and the yield rate is high. Spraying copper materials at designated locations can also greatly reduce costs.
附图说明Description of drawings
图1为本实用新型的结构示意图;Fig. 1 is the structural representation of the utility model;
附图标记:Reference signs:
10-IGBT模块;11-连接底板;12-安装孔;20-散热器本体;21-散热片;22-固定孔;30-镀铜区。10-IGBT module; 11-connecting bottom plate; 12-installation hole; 20-radiator body; 21-radiating fin; 22-fixing hole; 30-copper plating area.
具体实施方式Detailed ways
一种一体化电力模块散热器,包括IGBT模块10和散热器本体20,所述的IGBT模块10位于所述的散热器本体20上方,所述的散热器本体20下方设有散热片21,所述的IGBT模块10与所述的散热器本体20之间设有镀铜区30。将模块焊接到散热器上,可大幅降低热阻,从而提高效能,使用的IGBT或MOS等功率芯片,可降低功率使用,进而降低成本,或原来器件的余量更大,安全系数更高An integrated power module heat sink, including an IGBT module 10 and a heat sink body 20, the IGBT module 10 is located above the heat sink body 20, and a heat sink 21 is provided below the heat sink body 20, the A copper plating area 30 is provided between the IGBT module 10 and the heat sink body 20 . Welding the module to the heat sink can greatly reduce thermal resistance, thereby improving performance. The use of power chips such as IGBT or MOS can reduce power usage, thereby reducing costs, or the margin of the original device is larger, and the safety factor is higher.
优选的,所述的IGBT模块10下方设有连接底板11,所述的连接底板11上设有安装孔12,所述的散热器本体20上设有与所述的安装孔12对应的固定孔22。通过安装孔和固定孔的相互连接,使得IGBT模块和散热器本体之间连接更紧固。Preferably, the bottom of the IGBT module 10 is provided with a connecting bottom plate 11, the connecting bottom plate 11 is provided with mounting holes 12, and the heat sink body 20 is provided with fixing holes corresponding to the mounting holes 12. twenty two. Through the interconnection of the mounting holes and the fixing holes, the connection between the IGBT module and the heat sink body is more secure.
优选的,所述的镀铜区30大小形状与所述的IGBT模块10相同。镀铜区可根据模块大小进行调节,无需大面积进行镀铜,可以大幅降低成本。Preferably, the size and shape of the copper plating area 30 is the same as that of the IGBT module 10 . The copper plating area can be adjusted according to the size of the module, and there is no need for copper plating on a large area, which can greatly reduce the cost.
优选的,所述的IGBT模块10焊接于镀铜区30上。Preferably, the IGBT module 10 is welded on the copper plating area 30 .
优选的,所述的镀铜区30的铜采用冷焊或者热焊技术焊接到散热器本体20上。Preferably, the copper in the copper plating area 30 is welded to the radiator body 20 by cold welding or hot welding technology.
优选的,所述的散热片21有多个,各散热片21之间距离为3-5mm。Preferably, there are multiple cooling fins 21, and the distance between the cooling fins 21 is 3-5 mm.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920193272.6U CN209747503U (en) | 2019-02-13 | 2019-02-13 | An integrated power module radiator |
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| CN201920193272.6U CN209747503U (en) | 2019-02-13 | 2019-02-13 | An integrated power module radiator |
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| CN209747503U true CN209747503U (en) | 2019-12-06 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904130A (en) * | 2019-02-13 | 2019-06-18 | 浙江天毅半导体科技有限公司 | A kind of integral electrical module heat radiator |
| CN113035807A (en) * | 2021-03-08 | 2021-06-25 | 广东神思半导体有限公司 | Triode with stable heat radiation structure |
-
2019
- 2019-02-13 CN CN201920193272.6U patent/CN209747503U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904130A (en) * | 2019-02-13 | 2019-06-18 | 浙江天毅半导体科技有限公司 | A kind of integral electrical module heat radiator |
| CN113035807A (en) * | 2021-03-08 | 2021-06-25 | 广东神思半导体有限公司 | Triode with stable heat radiation structure |
| CN113035807B (en) * | 2021-03-08 | 2022-05-27 | 广东神思半导体有限公司 | Triode with stable heat radiation structure |
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Effective date of registration: 20251111 Address after: Unit RA05-19, 1st Floor, Teaching Area, No.1 Software Park Road, Tangjiawan Town, High tech Zone, Zhuhai City, Guangdong Province 519000 Patentee after: Guangdong Dagong Environmental Control Technology Co.,Ltd. Country or region after: China Address before: Room 121, 1st floor, 683 Yangming North Road, Yuecheng District, Shaoxing City, Zhejiang Province, 312000 Patentee before: ZHEJIANG TIANYI SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Country or region before: China |