CN109904130A - A kind of integral electrical module heat radiator - Google Patents

A kind of integral electrical module heat radiator Download PDF

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Publication number
CN109904130A
CN109904130A CN201910112221.0A CN201910112221A CN109904130A CN 109904130 A CN109904130 A CN 109904130A CN 201910112221 A CN201910112221 A CN 201910112221A CN 109904130 A CN109904130 A CN 109904130A
Authority
CN
China
Prior art keywords
radiator
radiator body
module
integral electrical
igbt module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910112221.0A
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Chinese (zh)
Inventor
尹建维
刘淑为
黄惠殊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Tianyi Semiconductor Technology Co Ltd
Original Assignee
Zhejiang Tianyi Semiconductor Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Tianyi Semiconductor Technology Co Ltd filed Critical Zhejiang Tianyi Semiconductor Technology Co Ltd
Priority to CN201910112221.0A priority Critical patent/CN109904130A/en
Publication of CN109904130A publication Critical patent/CN109904130A/en
Pending legal-status Critical Current

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Abstract

The invention belongs to electrical equipment fields, more particularly to a kind of integral electrical module heat radiator, including IGBT module and radiator body, the IGBT module bottom plate is located above the radiator body, cooling fin is equipped with below the radiator body, copper plated area is equipped between the IGBT module and the radiator body, this integral electrical module heat radiator, thermal resistance can be greatly reduced, to improve efficiency, IGBT the or MOS constant power chip used, cpable of lowering power is used, and then cost is reduced, safety coefficient is higher.

Description

A kind of integral electrical module heat radiator
Technical field
The invention belongs to electrical equipment fields, and in particular to a kind of integral electrical module heat radiator.
Background technique
Radiator is chiefly used in electrical equipment, prevents electrical equipment from causing electric appliance to damage since heat dissipation is bad in use Bad, module is connect by existing radiator by heat-conducting silicone grease with radiator.Thermal resistance therein is very high, most power wave Take on heat loss, in order to be transmitted on radiator as early as possible by heat caused by device (module), needs with very big heat dissipation Device causes the temperature difference of heating device and radiator, and to achieve the purpose that absorb heat, radiating efficiency is lower.
Summary of the invention
The object of the present invention is to provide a kind of integral electrical module heat radiators, and thermal resistance can be greatly reduced, to improve effect Can, IGBT the or MOS constant power chip used, cpable of lowering power uses, and then reduces cost, and safety coefficient is higher.
In order to achieve the goal above, the technical solution adopted by the present invention are as follows: a kind of integral electrical module heat radiator, including IGBT module and radiator body, the IGBT module bottom plate are located above the radiator body, the radiator It is equipped with cooling fin below ontology, copper plated area is equipped between the IGBT module and the radiator body.
Further, connecting bottom board is equipped with below the IGBT module, the connecting bottom board is equipped with mounting hole, institute The radiator body stated is equipped with fixation hole corresponding with the mounting hole.
Further, the copper plated area size shape is identical as the IGBT module bottom surface.
Further, the IGBT module is welded on copper plated area.
Further, the copper of the copper plated area is welded on radiator body using cold welding or hot weld technology.
Further, the cooling fin has multiple, between distance be 3-5mm.
The technical effects of the invention are that: module is welded on radiator by this integral electrical module heat radiator, can Thermal resistance is greatly reduced, to improve efficiency, IGBT the or MOS constant power chip used, cpable of lowering power is used, and then reduce at This, safety coefficient is higher, and using cold-welding technique, copper is sprayed on specific position, is just being suitble to module " multiple copper ceramic substrate " (DBC) or other modules use the bottom plate that may be welded to copper radiator, therefore, the accurate positioning (having target) of module welding, Yield is high.Copper material is sprayed in designated position, cost can also be greatly reduced.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention;
Appended drawing reference:
10-IGBT module;11- connecting bottom board;12- mounting hole;20- radiator body;21- cooling fin;22- fixation hole; The copper plated area 30-.
Specific embodiment
A kind of integral electrical module heat radiator, including IGBT module 10 and radiator body 20, the IGBT module 10 are located at 20 top of radiator body, are equipped with cooling fin 21, the IGBT mould below the radiator body 20 Copper plated area 30 is equipped between block 10 and the radiator body 20.Module is welded on radiator, thermal resistance can be greatly reduced, To improve efficiency, IGBT the or MOS constant power chip used, cpable of lowering power is used, and then reduces cost or original device Surplus it is bigger, safety coefficient is higher
Preferably, connecting bottom board 11 is equipped with below the IGBT module 10, the connecting bottom board 11 is equipped with installation Hole 12, the radiator body 20 are equipped with fixation hole 22 corresponding with the mounting hole 12.Pass through mounting hole and fixation The interconnection in hole, more fastens so that connecting between IGBT module and radiator body.
Preferably, 30 size shape of copper plated area is identical as the IGBT module 10.It copper plated area can be according to module Size is adjusted, and carries out copper facing without large area, cost can be greatly reduced.
Preferably, the IGBT module 10 is welded on copper plated area 30.
Preferably, the copper of the copper plated area 30 is welded on radiator body 20 using cold welding or hot weld technology.
Preferably, the cooling fin 21 has multiple, and distance is 3-5mm between each cooling fin 21.

Claims (6)

1. a kind of integral electrical module heat radiator, including IGBT module (10) and radiator body (20), it is characterised in that: institute The IGBT module (10) stated is located above the radiator body (20), and heat dissipation is equipped with below the radiator body (20) Piece (21) is equipped with copper plated area (30) between the IGBT module (10) and the radiator body (20).
2. integral electrical module heat radiator according to claim 1, it is characterised in that: below the IGBT module (10) Equipped with connecting bottom board (11), the connecting bottom board (11) is equipped with mounting hole (12), and the radiator body is set on (20) There is fixation hole (22) corresponding with the mounting hole (12).
3. integral electrical module heat radiator according to claim 1, it is characterised in that: described copper plated area (30) the size shape Shape is identical as IGBT module (10).
4. integral electrical module heat radiator according to claim 2, it is characterised in that: IGBT module (10) welding In on copper plated area (30).
5. integral electrical module heat radiator according to claim 3, it is characterised in that: the copper of the copper plated area (30) is adopted It is welded on radiator body (20) with cold welding or hot weld technology.
6. integral electrical module heat radiator according to claim 1, it is characterised in that: the cooling fin (21) has more A, distance is 3-5mm between each cooling fin (21).
CN201910112221.0A 2019-02-13 2019-02-13 A kind of integral electrical module heat radiator Pending CN109904130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910112221.0A CN109904130A (en) 2019-02-13 2019-02-13 A kind of integral electrical module heat radiator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910112221.0A CN109904130A (en) 2019-02-13 2019-02-13 A kind of integral electrical module heat radiator

Publications (1)

Publication Number Publication Date
CN109904130A true CN109904130A (en) 2019-06-18

Family

ID=66944810

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910112221.0A Pending CN109904130A (en) 2019-02-13 2019-02-13 A kind of integral electrical module heat radiator

Country Status (1)

Country Link
CN (1) CN109904130A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101039566A (en) * 2006-03-17 2007-09-19 富准精密工业(深圳)有限公司 Heat abstractor and electronic device using the same
CN102299144A (en) * 2011-06-15 2011-12-28 佛山市顺德区和而泰电子科技有限公司 Discreet IGBT module and substrate thereof
CN103887339A (en) * 2012-12-19 2014-06-25 中兴通讯股份有限公司 Transistor, transistor heat radiation structure and transistor production method
CN107195604A (en) * 2016-03-15 2017-09-22 富士电机株式会社 The manufacture method of semiconductor module and semiconductor module
CN209747503U (en) * 2019-02-13 2019-12-06 浙江天毅半导体科技有限公司 Integrated power module radiator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101039566A (en) * 2006-03-17 2007-09-19 富准精密工业(深圳)有限公司 Heat abstractor and electronic device using the same
CN102299144A (en) * 2011-06-15 2011-12-28 佛山市顺德区和而泰电子科技有限公司 Discreet IGBT module and substrate thereof
CN103887339A (en) * 2012-12-19 2014-06-25 中兴通讯股份有限公司 Transistor, transistor heat radiation structure and transistor production method
CN107195604A (en) * 2016-03-15 2017-09-22 富士电机株式会社 The manufacture method of semiconductor module and semiconductor module
CN209747503U (en) * 2019-02-13 2019-12-06 浙江天毅半导体科技有限公司 Integrated power module radiator

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