CN212542429U - Novel IGBT half-bridge modular structure - Google Patents

Novel IGBT half-bridge modular structure Download PDF

Info

Publication number
CN212542429U
CN212542429U CN202021338541.2U CN202021338541U CN212542429U CN 212542429 U CN212542429 U CN 212542429U CN 202021338541 U CN202021338541 U CN 202021338541U CN 212542429 U CN212542429 U CN 212542429U
Authority
CN
China
Prior art keywords
fixedly connected
plate
bridge module
igbt half
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202021338541.2U
Other languages
Chinese (zh)
Inventor
邱秀华
邱嘉龙
朱永斌
何祖辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Tianyi Semiconductor Technology Co ltd
Original Assignee
Zhejiang Tianyi Semiconductor Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Tianyi Semiconductor Technology Co ltd filed Critical Zhejiang Tianyi Semiconductor Technology Co ltd
Priority to CN202021338541.2U priority Critical patent/CN212542429U/en
Application granted granted Critical
Publication of CN212542429U publication Critical patent/CN212542429U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The utility model discloses a novel IGBT half-bridge modular structure, which comprises a substrate, the bottom fixedly connected with heat-conducting layer of base plate, the bottom fixedly connected with fin of heat-conducting layer, the bottom fixedly connected with cooling plate of fin, the inner chamber fixedly connected with cooling tube of cooling plate, the top fixedly connected with welding layer of base plate, the equal fixedly connected with DBC board in top of both sides welding layer, the opposite one side of DBC board is seted up flutedly, the bottom fixed mounting of recess inner wall has temperature sensor, the middle-end fixedly connected with copper at DBC board top. The utility model discloses possess the advantage that the protectiveness is good, it is relatively poor to have solved current IGBT half-bridge module at the in-process protectiveness of work, is not convenient for detect the temperature of IGBT half-bridge module during operation to dispel the heat to IGBT half-bridge module, be not convenient for eliminate the static of IGBT half-bridge module, influence IGBT half-bridge module life's problem easily.

Description

Novel IGBT half-bridge modular structure
Technical Field
The utility model relates to a IGBT half-bridge module technical field specifically is a novel IGBT half-bridge modular structure.
Background
The GBT half-bridge module is a modularized semiconductor product formed by bridge-packaging an IGBT (insulated gate bipolar transistor chip) and an FRD (fast recovery diode) through a specific circuit, and the packaged IGBT module is directly applied to equipment such as a frequency converter, an UPS (uninterrupted power supply) and the like.
The protection nature of current IGBT half-bridge module at the in-process of work is relatively poor, is not convenient for detect the temperature of IGBT half-bridge module during operation to dispel the heat to IGBT half-bridge module, be not convenient for eliminate the static of IGBT half-bridge module, influence the life of IGBT half-bridge module easily.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a novel IGBT half-bridge modular structure possesses the advantage that the protectiveness is good, and it is relatively poor to have solved current IGBT half-bridge module at the in-process protectiveness of work, is not convenient for detect the temperature of IGBT half-bridge module during operation to dispel the heat to IGBT half-bridge module, be not convenient for eliminate the static of IGBT half-bridge module, influence IGBT half-bridge module life's problem easily.
In order to achieve the above object, the utility model provides a following technical scheme: a novel IGBT half-bridge module structure comprises a substrate, wherein the bottom of the substrate is fixedly connected with a heat conduction layer, the bottom of the heat conduction layer is fixedly connected with a heat radiating sheet, the bottom of the heat radiating sheet is fixedly connected with a cooling plate, the inner cavity of the cooling plate is fixedly connected with a cooling pipe, the top of the substrate is fixedly connected with a welding layer, the tops of the welding layers at two sides are fixedly connected with a DBC plate, one side of the DBC plate opposite to the DBC plate is provided with a groove, the bottom of the inner wall of the groove is fixedly provided with a temperature sensor, the middle end of the top of the DBC plate is fixedly connected with a copper plate, the top of the copper plate is fixedly connected with an IGBT chip and an FRD chip, the left side of the top of the DBC plate is fixedly connected with a first terminal, the right side of the top of the DBC, one end, far away from the copper plate, of the conducting wire is fixedly connected with one side, opposite to the conducting plate, of the conducting wire, and the rear side of the conducting plate is fixedly connected with a ground wire.
Preferably, the heat conducting layer is made of heat conducting silicone grease, and the liquid outlet end and the liquid inlet end of the cooling pipe penetrate through the left side of the cooling plate.
Preferably, the two sides of the base plate are fixedly connected with mounting plates, and mounting holes are formed in the mounting plates.
Preferably, the material of the heat sink is an aluminum alloy, and the material of the conductive plate is a copper metal.
Preferably, the cooling pipe is shaped like a U, and a connection terminal is disposed at an end of the ground wire away from the conductive plate.
Compared with the prior art, the beneficial effects of the utility model are as follows:
1. the utility model discloses a base plate, the heat-conducting layer, the fin, the cooling plate, the cooling tube, temperature sensor, the copper, the DBC board, the conductor wire, the current conducting plate, first terminal, a groove, the cooperation of welding layer and ground wire is used, it is relatively poor to have solved current IGBT half-bridge module at the in-process protectiveness of work, the temperature of the during operation of IGBT half-bridge module of being not convenient for detects, and dispel the heat to IGBT half-bridge module, be not convenient for eliminate the static of IGBT half-bridge module, influence IGBT half-bridge module life's problem easily.
2. The utility model discloses a set up the heat-conducting layer, can be convenient for conduct the fin to the heat of base plate, through setting up the fin, can be convenient for dispel the heat to the heat, use through the cooperation of cooling plate and cooling tube, can be convenient for dispel the heat to the fin, through setting up the mounting panel, can be convenient for install the base plate, use through recess and temperature sensor's cooperation, can be convenient for detect the temperature of DBC board, use through the cooperation of conductor wire, current conducting plate and ground wire, can be convenient for eliminate the static of copper.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic top view of the present invention;
fig. 3 is a schematic top sectional view of the cooling frame of the present invention.
In the figure: the structure comprises a substrate 1, a heat conduction layer 2, a heat radiating fin 3, a cooling plate 4, a cooling pipe 5, a mounting plate 6, a temperature sensor 7, a copper plate 8, a DBC plate 9, a conducting wire 10, a conducting plate 11, a first terminal 12, an IGBT chip 13, a second terminal 14, a groove 15, a welding layer 16, a ground wire 17 and an FRD chip 18.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front end", "rear end", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element to be referred must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted", "provided", "connected", and the like are to be construed broadly, such as "connected", which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The utility model provides a base plate 1, heat-conducting layer 2, fin 3, cooling plate 4, cooling tube 5, mounting panel 6, temperature sensor 7, copper 8, DBC board 9, conductor wire 10, current conducting plate 11, first terminal 12, IGBT chip 13, second terminal 14, welding layer 16, ground wire 17 and parts such as FRD chip 18 are general standard or the part that technical staff in the field know, its structure and principle all can learn through the technical manual or learn through conventional experimental method for technical staff in the field.
Referring to fig. 1-3, a novel IGBT half-bridge module structure comprises a substrate 1, mounting plates 6 are fixedly connected to both sides of the substrate 1, mounting holes are formed in the mounting plates 6, the substrate 1 can be conveniently mounted by arranging the mounting plates 6, a heat conducting layer 2 is fixedly connected to the bottom of the substrate 1, the heat conducting layer 2 is made of heat conducting silicone grease, the heat of the substrate 1 can be conveniently conducted to a heat dissipating fin 3 by arranging the heat conducting layer 2, the bottom of the heat conducting layer 2 is fixedly connected with a heat dissipating fin 3, the heat dissipating fin 3 can conveniently dissipate heat by arranging the heat dissipating fin 3, the heat dissipating fin 3 is made of aluminum alloy, the bottom of the heat dissipating fin 3 is fixedly connected with a cooling plate 4, an inner cavity of the cooling plate 4 is fixedly connected with a cooling pipe 5, the cooling plate 4 and the cooling pipe 5 are used in cooperation, a liquid outlet end and a liquid inlet end of the cooling pipe 5 both, the cooling tube 5 is U-shaped, the top of the substrate 1 is fixedly connected with a welding layer 16, the tops of the welding layers 16 on two sides are fixedly connected with a DBC plate 9, one side of the DBC plate 9 opposite to the welding layer is provided with a groove 15, the bottom of the inner wall of the groove 15 is fixedly provided with a temperature sensor 7, the temperature of the DBC plate 9 can be conveniently detected by matching the groove 15 and the temperature sensor 7, the middle end of the top of the DBC plate 9 is fixedly connected with a copper plate 8, the top of the copper plate 8 is fixedly connected with an IGBT chip 13 and an FRD chip 18, the left side of the top of the DBC plate 9 is fixedly connected with a first terminal 12, the right side of the top of the DBC plate 9 is fixedly connected with a second terminal 14, one side of the copper plate 8 opposite to the conducting wire 10, the top of the middle welding layer 16 is fixedly connected with a conducting plate 11, the conducting plate 11 is made of copper metal, rear side fixedly connected with ground wire 17 of current-conducting plate 11, through conducting wire 10, current-conducting plate 11 and ground wire 17's cooperation is used, can be convenient for eliminate 8 static of copper, the one end that current-conducting plate 11 was kept away from to ground wire 17 is provided with connecting terminal, through base plate 1, heat-conducting layer 2, fin 3, cooling plate 4, cooling tube 5, temperature sensor 7, copper 8, DBC board 9, conducting wire 10, current-conducting plate 11, first terminal 12, recess 15, the cooperation of welded layer 16 and ground wire 17 is used, it is relatively poor at the in-process protectiveness of work to have solved current IGBT half-bridge module, be not convenient for detect the temperature of IGBT half-bridge module during operation, and dispel the heat to IGBT half-bridge module, be not convenient for eliminate the static of IGBT half-bridge module, influence IGBT half-bridge module life.
During the use, the heat conduction that IGBT chip 13 and FRD chip 18 during operation produced is to DBC board 9, DBC board 9 conducts base plate 1 and heat-conducting layer 2 to the heat, heat-conducting layer 2 conducts the heat of base plate 1 to fin 3, fin 3 dispels the heat to the heat, cooling plate 4 and cooling tube 5 dispel the heat to fin 3, temperature sensor 7 detects the temperature of DBC board 9, conductor wire 10 conducts on the current conducting plate 11 to the static of copper 8, current conducting plate 11 discharges the static through ground wire 17, eliminate the static of copper 8, prevent that IGBT chip 13 and FRD chip 18 from damaging.
In summary, the following steps: this novel IGBT half-bridge modular structure, through base plate 1, heat-conducting layer 2, fin 3, cooling plate 4, cooling tube 5, temperature sensor 7, copper 8, DBC board 9, conductor wire 10, current conducting plate 11, first terminal 12, recess 15, the cooperation of welding layer 16 and ground wire 17 is used, it is relatively poor to have solved current IGBT half-bridge module at the in-process protectiveness of work, be not convenient for detect the temperature of IGBT half-bridge module during operation, and dispel the heat to IGBT half-bridge module, be not convenient for eliminate the static of IGBT half-bridge module, influence IGBT half-bridge module life's problem easily.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (5)

1. A novel IGBT half-bridge module structure, includes base plate (1), its characterized in that: the bottom of the substrate (1) is fixedly connected with a heat conduction layer (2), the bottom of the heat conduction layer (2) is fixedly connected with a heat radiation sheet (3), the bottom of the heat radiation sheet (3) is fixedly connected with a cooling plate (4), the inner cavity of the cooling plate (4) is fixedly connected with a cooling pipe (5), the top of the substrate (1) is fixedly connected with a welding layer (16), the tops of the welding layers (16) at two sides are fixedly connected with a DBC plate (9), one side of the DBC plate (9) opposite to the cooling layer is provided with a groove (15), the bottom of the inner wall of the groove (15) is fixedly provided with a temperature sensor (7), the middle end of the top of the DBC plate (9) is fixedly connected with a copper plate (8), the top of the copper plate (8) is fixedly connected with an IGBT chip (13) and an FRD chip (18), the left side of the top, the right side fixedly connected with second terminal (14) at DBC board (9) top, copper (8) opposite one side fixedly connected with conductor wire (10), the top fixedly connected with current conducting plate (11) of middle-end welded layer (16), the one end that copper (8) were kept away from in conductor wire (10) and the opposite one side fixed connection of current conducting plate (11), the rear side fixedly connected with ground wire (17) of current conducting plate (11).
2. The novel IGBT half-bridge module structure of claim 1, wherein: the heat conducting layer (2) is made of heat conducting silicone grease, and the liquid outlet end and the liquid inlet end of the cooling pipe (5) penetrate through the left side of the cooling plate (4).
3. The novel IGBT half-bridge module structure of claim 1, wherein: the mounting plate is characterized in that mounting plates (6) are fixedly connected to the two sides of the base plate (1), and mounting holes are formed in the mounting plates (6).
4. The novel IGBT half-bridge module structure of claim 1, wherein: the radiating fins (3) are made of aluminum alloy, and the conducting plates (11) are made of copper metal.
5. The novel IGBT half-bridge module structure of claim 1, wherein: the shape of cooling tube (5) is "U" type, ground wire (17) are kept away from the one end of conductive plate (11) and are provided with connecting terminal.
CN202021338541.2U 2020-07-09 2020-07-09 Novel IGBT half-bridge modular structure Active CN212542429U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202021338541.2U CN212542429U (en) 2020-07-09 2020-07-09 Novel IGBT half-bridge modular structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202021338541.2U CN212542429U (en) 2020-07-09 2020-07-09 Novel IGBT half-bridge modular structure

Publications (1)

Publication Number Publication Date
CN212542429U true CN212542429U (en) 2021-02-12

Family

ID=74522428

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202021338541.2U Active CN212542429U (en) 2020-07-09 2020-07-09 Novel IGBT half-bridge modular structure

Country Status (1)

Country Link
CN (1) CN212542429U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115763396A (en) * 2022-11-03 2023-03-07 江苏东海半导体股份有限公司 Anti-static IGBT module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115763396A (en) * 2022-11-03 2023-03-07 江苏东海半导体股份有限公司 Anti-static IGBT module
CN115763396B (en) * 2022-11-03 2024-02-02 江苏东海半导体股份有限公司 Antistatic IGBT module

Similar Documents

Publication Publication Date Title
CN110537257A (en) The cooling arrangement of semiconductor
US8836103B2 (en) Semiconductor unit
CN109920768B (en) High-power IGBT module water-cooling heat dissipation system considering operation conditions
CN102664177A (en) Power semiconductor module adopting double-sided cooling
CN110660762A (en) Heat transfer structure, power electronic module, method for manufacturing power electronic module, and cooling element
CN212542429U (en) Novel IGBT half-bridge modular structure
CN207354068U (en) A kind of IGBT power module and the power modules for including it
JP2002095267A (en) Inverter device
CN110797318A (en) IGBT packaging structure with double-sided heat pipe cooling
JP2004128099A (en) Water-cooled inverter
CN214254416U (en) Power module and radiating bottom plate thereof
JPH11121668A (en) Liquid-cooled flat semiconductor device
CN209747503U (en) Integrated power module radiator
CN209896049U (en) Single-phase rectifier bridge
CN210805757U (en) IGBT packaging structure with double-sided heat pipe cooling
CN212517183U (en) High-efficient heat radiation structure of IGBT module
CN112038245B (en) Connection process of internal binding line of power module
CN211209613U (en) Brushless motor controller system
CN216563101U (en) Discrete device integrated power module based on DBC ceramic copper-clad plate
CN110829901A (en) Brushless motor controller system and assembling method thereof
CN110890337A (en) Double-sided hybrid heat dissipation structure of high-power-density IGBT module
CN217037058U (en) Power frequency rectification inversion integrated discrete module
CN109841585B (en) High-power IGBT module air-cooled radiating fin considering operation conditions
CN212161793U (en) Anti-drop semiconductor
CN112366188B (en) Semiconductor device packaging structure with radiating fins and packaging method

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant