CN208478326U - Intelligent high-power semiconductor diode - Google Patents

Intelligent high-power semiconductor diode Download PDF

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Publication number
CN208478326U
CN208478326U CN201821918898.0U CN201821918898U CN208478326U CN 208478326 U CN208478326 U CN 208478326U CN 201821918898 U CN201821918898 U CN 201821918898U CN 208478326 U CN208478326 U CN 208478326U
Authority
CN
China
Prior art keywords
control housing
housing base
housing cover
hole
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201821918898.0U
Other languages
Chinese (zh)
Inventor
王学兵
吴江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changzhou Changyuan Electronics Co Ltd
Original Assignee
Changzhou Changyuan Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Changyuan Electronics Co Ltd filed Critical Changzhou Changyuan Electronics Co Ltd
Priority to CN201821918898.0U priority Critical patent/CN208478326U/en
Application granted granted Critical
Publication of CN208478326U publication Critical patent/CN208478326U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

The utility model discloses intelligent high-power semiconductor diodes, including control housing base and control housing cover, the lower surface of the control housing cover is evenly arranged with multiple insulation tubes, the upper end of each insulation tube runs through control housing cover and is provided with partition, the two sides of the control housing cover are respectively arranged with the first tapped through hole being connected to card slot, the lower surface of the control housing base is symmetrically arranged with the fixture block with pocket matches, the upper surface of the control housing base is symmetrically arranged with cooling fin, the lower end of each cooling fin runs through control housing base and is provided with alchlor heat conductive insulating pad.The utility model is provided with cooling fin, alchlor heat conductive insulating pad, partition and insulation tube, can be radiated by the effect of heat transfer, the lost efficiency of enhancing diode internal heat, high reliablity, long service life.

Description

Intelligent high-power semiconductor diode
Technical field
The utility model belongs to diode technologies field, and in particular to intelligent high-power semiconductor diode.
Background technique
Diode, in electronic component, there are two the devices of electrode for a kind of tool, only an electric current are allowed to be flowed through by single direction, Many uses are the functions using its rectification.And varactor is then used to the adjustable condenser as electronic type.It is most of Our normally referred to as " rectification (Rectifying) " functions of the current direction that diode has.The most common function of diode It can be exactly only to allow electric current by single direction by (referred to as forward bias voltage drop), block (referred to as reverse bias) when reversed.Therefore, two Pole pipe can be thought of as the non-return valve of electronic edition.
Existing high power semi-conductor diode radiating effect is poor, and reliability is low, service life is short;And it is inconvenient into Row disassembly, can not be cleared up or be repaired, higher operating costs.Thus it is proposed that intelligent high-power semiconductor diode.
Utility model content
The purpose of this utility model is to provide intelligent high-power semiconductor diodes, to solve to mention in above-mentioned background technique Existing high power semi-conductor diode radiating effect out is poor, and reliability is low, service life is short;And be inconvenient to be torn open It unloads, can not be cleared up or be repaired, the problem of higher operating costs.
To achieve the above object, the utility model provides the following technical solutions: intelligent high-power semiconductor diode, including Housing base and control housing cover are controlled, the lower surface of the control housing cover is evenly arranged with multiple insulation tubes, each The upper end of the insulation tube runs through control housing cover and is provided with partition, and the upper surface of the control housing cover is symmetrical arranged There is card slot, and the two sides of the control housing cover are respectively arranged with the first tapped through hole being connected to card slot, the control shell The lower surface of body pedestal is symmetrically arranged with the fixture block with pocket matches, and the side of each fixture block offers and the first screw thread Corresponding second tapped through hole of through-hole is provided with jointly between ipsilateral second tapped through hole and the first tapped through hole The inner cavity lower surface of two fixing bolts, the control housing base is respectively arranged with the first fixed link and the second fixed link, described The lower end of first fixed link and the second fixed link is provided with circuit board jointly, and the upper surface of the control housing base is symmetrical arranged There is cooling fin, the lower end of each cooling fin runs through control housing base and is provided with alchlor heat conductive insulating pad, described The lower surface of alchlor heat conductive insulating pad is provided with insulated gate bipolar translator power tube.
Preferably, the first fixed spiral shell is provided between the insulated gate bipolar translator power tube and alchlor heat conductive insulating pad Bolt.
Preferably, waterproof sealing gasket is provided between the control housing base and control housing cover.
Preferably, the cooling fin is made of insulating materials, and between the cooling fin and alchlor heat conductive insulating pad It is fixed by gluing.
Preferably, the upper surface of the control housing base is respectively arranged with the first support and the second support, and described first Support and the second support are of an L-shaped structure, and the upper surface of first support and the second support is respectively arranged with fixing bolt Hole.
Compared with prior art, the utility model has the beneficial effects that
1. the effect of heat transfer can be passed through by being provided with cooling fin, alchlor heat conductive insulating pad, partition and insulation tube It radiates, the lost efficiency of enhancing diode internal heat, high reliablity, long service life;
2. being engaged first by card slot and fixture block between control housing base and control housing cover, then pass through the Two fixing bolts are fixed, and are convenient for clearing up or repair, use cost is low;
3., by unscrewing the second fixing bolt, the second fixing bolt is detached from second when needing to carry out detachable maintaining cleaning The inside of tapped through hole and the first tapped through hole, fixture block are detached from the inside of card slot, control housing base and control housing cover point From can be repaired to inside.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model;
Fig. 2 is the cross-sectional view of the utility model;
Fig. 3 is the portion the A partial enlarged view of the utility model;
In figure: 1, controlling housing base;2, housing cover is controlled;3, insulation tube;4, cooling fin;5, circuit board;6, partition; 7, the first fixed link;8, the second fixed link;9, insulated gate bipolar translator power tube;10, the first tapped through hole;11, alchlor is led Thermal insulation pad;12, the first fixing bolt;13, the second fixing bolt;14, card slot;15, fixture block;16, the second tapped through hole;17, First support;18, the second support.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work Every other embodiment obtained, fall within the protection scope of the utility model.
Fig. 1, Fig. 2 and Fig. 3 are please referred to, the utility model provides a kind of technical solution: intelligent high-power semiconductor diode, Including control housing base 1 and control housing cover 2, the lower surface of the control housing cover 2 is evenly arranged with multiple insulation Pipe 3, the upper end of each insulation tube 3 runs through control housing cover 2 and is provided with partition 6, described to control the upper of housing cover 2 Surface is symmetrically arranged with card slot 14, and the two sides of the control housing cover 2 are respectively arranged with the first spiral shell being connected to card slot 14 The lower surface of line through-hole 10, the control housing base 1 is symmetrically arranged with and the matched fixture block 15 of card slot 14, each fixture block 15 side offers second tapped through hole 16 corresponding with the first tapped through hole 10, is located at ipsilateral second tapped through hole 16 and first are provided with the second fixing bolt 13, the inner cavity lower surface of the control housing base 1 between tapped through hole 10 jointly It is respectively arranged with the first fixed link 7 and the second fixed link 8, the lower end of first fixed link 7 and the second fixed link 8 is arranged jointly There is circuit board 5, the upper surface of the control housing base 1 is symmetrically arranged with cooling fin 4, and the lower end of each cooling fin 4 is equal Control housing base 1 is provided with alchlor heat conductive insulating pad 11, the lower surface of the alchlor heat conductive insulating pad 11 It is provided with insulated gate bipolar translator power tube 9.
The first fixing bolt is provided between the insulated gate bipolar translator power tube 9 and alchlor heat conductive insulating pad 11 12, it states and is provided with waterproof sealing gasket between control housing base 1 and control housing cover 2, the cooling fin 4 is insulating materials system At, and fixed between the cooling fin 4 and alchlor heat conductive insulating pad 11 by gluing, it is described to control the upper of housing base 1 Surface is respectively arranged with the first support 17 and the second support 18, and first support 17 and the second support 18 are of an L-shaped structure, and The upper surface of first support 17 and the second support 18 is respectively arranged with fixed bolt hole.
It should be noted that the utility model is intelligent high-power semiconductor diode, such as:
Fig. 1 is the structural schematic diagram of the utility model.By fixed bolt hole, by the first support 17 and the second support 18 into Row is fixed, and can be maked somebody a mere figurehead control housing base 1 and control housing cover 2, be enhanced heat dissipation effect.
Fig. 2 is the cross-sectional view of the utility model.It can be directly by insulation using alchlor heat conductive insulating pad 11 and cooling fin 4 Heat caused by grid bipolar-type power pipe 9 is radiated by conduction of heat, and being provided with the first fixing bolt 12 can increase Fixed effect, using partition 6 and insulation tube 3, can indirect heat transfer carried out by inner air radiate.
Fig. 3 is the portion the A partial enlarged view of the utility model.When needing to carry out detachable maintaining cleaning, by unscrewing second Fixing bolt 13, the second fixing bolt 13 are detached from the inside of the second tapped through hole 16 and the first tapped through hole 10, and fixture block 15 is detached from The inside of card slot 14, control housing base 1 and control housing cover 2 separate, and can repair to inside.
While there has been shown and described that the embodiments of the present invention, for the ordinary skill in the art, It is understood that these embodiments can be carried out with a variety of variations in the case where not departing from the principles of the present invention and spirit, repaired Change, replacement and variant, the scope of the utility model is defined by the appended claims and the equivalents thereof.

Claims (5)

1. intelligent high-power semiconductor diode, including control housing base (1) and control housing cover (2), it is characterised in that: The lower surface of control housing cover (2) is evenly arranged with multiple insulation tubes (3), and the upper end of each insulation tube (3) is equal It is provided with partition (6) through control housing cover (2), the upper surface of control housing cover (2) is symmetrically arranged with card slot (14), and the two sides of control housing cover (2) are respectively arranged with the first tapped through hole (10) being connected to card slot (14), institute The lower surface for stating control housing base (1) is symmetrically arranged with and card slot (14) matched fixture block (15), each fixture block (15) Side offer the second tapped through hole (16) corresponding with the first tapped through hole (10), it is logical to be located at ipsilateral second screw thread It is provided with jointly between hole (16) and the first tapped through hole (10) the second fixing bolt (13), control housing base (1) Inner cavity lower surface is respectively arranged with the first fixed link (7) and the second fixed link (8), and first fixed link (7) and second are fixed The lower end of bar (8) is provided with circuit board (5) jointly, and the upper surface of control housing base (1) is symmetrically arranged with cooling fin (4), the lower end of each cooling fin (4) run through control housing base (1) be provided with alchlor heat conductive insulating pad (11), The lower surface of the alchlor heat conductive insulating pad (11) is provided with insulated gate bipolar translator power tube (9).
2. intelligent high-power semiconductor diode according to claim 1, it is characterised in that: the insulated gate bipolar function The first fixing bolt (12) are provided between rate pipe (9) and alchlor heat conductive insulating pad (11).
3. intelligent high-power semiconductor diode according to claim 1, it is characterised in that: the control housing base (1) waterproof sealing gasket is provided between control housing cover (2).
4. intelligent high-power semiconductor diode according to claim 1, it is characterised in that: the cooling fin (4) is exhausted Edge material is made, and is fixed between the cooling fin (4) and alchlor heat conductive insulating pad (11) by gluing.
5. intelligent high-power semiconductor diode according to claim 1, it is characterised in that: the control housing base (1) upper surface is respectively arranged with the first support (17) and the second support (18), first support (17) and the second support (18) it is of an L-shaped structure, and the upper surface of first support (17) and the second support (18) is respectively arranged with fixed bolt hole.
CN201821918898.0U 2018-11-21 2018-11-21 Intelligent high-power semiconductor diode Expired - Fee Related CN208478326U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821918898.0U CN208478326U (en) 2018-11-21 2018-11-21 Intelligent high-power semiconductor diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201821918898.0U CN208478326U (en) 2018-11-21 2018-11-21 Intelligent high-power semiconductor diode

Publications (1)

Publication Number Publication Date
CN208478326U true CN208478326U (en) 2019-02-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201821918898.0U Expired - Fee Related CN208478326U (en) 2018-11-21 2018-11-21 Intelligent high-power semiconductor diode

Country Status (1)

Country Link
CN (1) CN208478326U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109872977A (en) * 2019-03-14 2019-06-11 如皋市大昌电子有限公司 It is a kind of can polycyclic adjusting stick chip type diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109872977A (en) * 2019-03-14 2019-06-11 如皋市大昌电子有限公司 It is a kind of can polycyclic adjusting stick chip type diode

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GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190205

Termination date: 20201121

CF01 Termination of patent right due to non-payment of annual fee