CN212517180U - High-power rapid heat dissipation type MOS device - Google Patents
High-power rapid heat dissipation type MOS device Download PDFInfo
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- CN212517180U CN212517180U CN202021723069.4U CN202021723069U CN212517180U CN 212517180 U CN212517180 U CN 212517180U CN 202021723069 U CN202021723069 U CN 202021723069U CN 212517180 U CN212517180 U CN 212517180U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48111—Disposition the wire connector extending above another semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
The utility model discloses a high-power quick heat dissipation type MOS device, include: the device comprises a MOSFET chip, a fast recovery diode, a ceramic heat conduction body, a source pin, a drain pin and a grid pin; a first strip-shaped groove, a second strip-shaped groove and a third groove are formed in one surface of the ceramic heat conduction body, and a first conductive strip, a second conductive strip and a conductive block are respectively filled in the first strip-shaped groove, the second strip-shaped groove and the third groove; the source electrode pin is electrically connected with the first conductive strip, the drain electrode pin is electrically connected with the other end of the conductive block, and the grid electrode pin is electrically connected with the second conductive strip; and the anode and the cathode of the fast recovery diode are connected to the first conductive strip and the conductive block through conductive gold wires. The utility model discloses high-power quick heat dissipation type MOS device has reduced power MOS's thermal resistance to be favorable to further improving the power of device, also improved the reliability of device.
Description
Technical Field
The utility model relates to a semiconductor device technical field especially relates to a high-power quick heat dissipation type MOS device.
Background
In the prior art, a lot of packaging structures related to field effect transistors, generally, a high-current packaging structure is to weld a field effect transistor directly on a circuit board, then fix the circuit board on a corresponding conductive base, and finally perform corresponding packaging. By adopting the field effect transistor packaging structure with the structure, the field effect transistor has higher working temperature and poor heat dissipation effect, so that welding spots are easily softened under the action of high temperature, and the field effect transistor and a circuit board are in poor contact to influence the work.
Disclosure of Invention
The utility model aims at providing a high-power quick heat dissipation type MOS device, this high-power quick heat dissipation type MOS device have reduced power MOS's thermal resistance to be favorable to further improving the power of device, also improved the reliability of device.
In order to achieve the above purpose, the utility model adopts the technical scheme that: a high power rapid heat dissipation MOS device comprising: the semiconductor device comprises an MOSFET chip, a fast recovery diode, a ceramic heat conduction body, a source pin, a drain pin and a grid pin which are positioned in an epoxy packaging body, wherein the source pin, the drain pin and the grid pin extend outwards from the epoxy packaging body;
a first strip-shaped groove, a second strip-shaped groove and a third groove are formed in one surface of the ceramic heat conduction body, and a first conductive strip, a second conductive strip and a conductive block are respectively filled in the first strip-shaped groove, the second strip-shaped groove and the third groove;
the MOSFET chip is provided with a source region, a drain region and a gate region, the MOSFET chip is arranged on the ceramic heat conduction body, and the source region, the drain region and the gate region are respectively and electrically connected with the first conductive strip, one end of the conductive block and the second conductive strip;
the source electrode pin is electrically connected with the first conductive strip, the drain electrode pin is electrically connected with the other end of the conductive block, and the grid electrode pin is electrically connected with the second conductive strip; and the anode and the cathode of the fast recovery diode are connected to the first conductive strip and the conductive block through conductive gold wires.
The further improved scheme in the technical scheme is as follows:
1. in the above scheme, the drain pin is located between the source pin and the gate pin.
2. In the scheme, the drain region on the back surface of the MOSFET chip is electrically connected with one end of the conductive block.
3. In the above scheme, the MOSFET chip is located between the first conductive strip and the second conductive strip.
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:
1. the utility model discloses high-power quick heat dissipation type MOS device, its MOSFET chip is installed on ceramic heat conduction body, and this source region, drain electrode region and gate region are connected with first busbar, conducting block one end and second busbar electricity respectively, and the positive pole and the negative pole of fast recovery diode are connected to first busbar, conducting block through electrically conductive gold thread, have prevented effectively that the induced voltage that produces in the moment of cutting off from puncturing the MOSFET chip to the reliability of device has been improved; and the MOSFET chip is arranged on the ceramic heat conduction body, and the source region, the drain region and the gate region are respectively and electrically connected with the first conductive strip, one end of the conductive block and the second conductive strip, so that the thermal resistance of the power MOS is reduced, the power of the device is further improved, and the advantages of high power and low power consumption of the power MOS are fully exerted.
2. The utility model discloses high-power quick heat dissipation type MOS device, open on its pottery heat conduction body surface has first bar groove, second bar groove and third recess, and this first bar groove, second bar groove and third recess intussuseption are filled respectively has first busbar, second busbar and conducting block, and the source electrode pin is connected with first busbar electricity, and the drain electrode pin is connected with the conducting block other end electricity, the grid electrode pin is connected with second busbar electricity, and existing volume that is favorable to further reducing the device also reduces the figure of part in the device, because heat dissipation area and body are a whole simultaneously, have improved device overall structure stability.
Drawings
FIG. 1 is a schematic structural diagram of a high-power rapid heat dissipation MOS device of the present invention;
fig. 2 is a partial schematic view of fig. 1.
In the above drawings: 1. an epoxy package; 2. a MOSFET chip; 21. a source region; 22. a MOSFET chip; 23. a MOSFET chip; 3. a ceramic thermally conductive body; 31. a first bar-shaped groove; 32. a second strip-shaped groove; 33. a third groove; 4. a source pin; 5. a drain pin; 6. a gate pin; 71. a first conductive strip; 72. a second conductive strip; 73. a conductive block; 8. a conductive wire; 9. a fast recovery diode; 10. and (3) conductive gold wires.
Detailed Description
Example 1: a high power rapid heat dissipation MOS device comprising: the semiconductor device comprises a MOSFET chip 2, a fast recovery diode 9, a ceramic heat conduction body 3, a source pin 4, a drain pin 5 and a grid pin 6 which are positioned in an epoxy packaging body 1, wherein the source pin 4, the drain pin 5 and the grid pin 6 extend outwards from the epoxy packaging body 1;
a first strip-shaped groove 31, a second strip-shaped groove 32 and a third groove 33 are formed in one surface of the ceramic heat conducting body 3, and a first conductive strip 71, a second conductive strip 72 and a conductive block 73 are respectively filled in the first strip-shaped groove 31, the second strip-shaped groove 32 and the third groove 33;
the MOSFET chip 2 is provided with a source region 21, a drain region 22 and a gate region 23, the MOSFET chip 2 is mounted on the ceramic heat conducting body, and the source region 21, the drain region 22 and the gate region 23 are electrically connected with the first conductive strip 71, one end of the conductive block 73 and the second conductive strip 72 respectively;
the source pin 4 is electrically connected to the first conductive strip 71, the drain pin 5 is electrically connected to the other end of the conductive block 73, and the gate pin 6 is electrically connected to the second conductive strip 72; the positive pole and the negative pole of the fast recovery diode 9 are connected to the first conductive strip 71 and the conductive block 73 through the conductive gold wire 10.
The drain pin 5 is located between the source pin 4 and the gate pin 6.
Example 2: a high power rapid heat dissipation MOS device comprising: the semiconductor device comprises a MOSFET chip 2, a fast recovery diode 9, a ceramic heat conduction body 3, a source pin 4, a drain pin 5 and a grid pin 6 which are positioned in an epoxy packaging body 1, wherein the source pin 4, the drain pin 5 and the grid pin 6 extend outwards from the epoxy packaging body 1;
a first strip-shaped groove 31, a second strip-shaped groove 32 and a third groove 33 are formed in one surface of the ceramic heat conducting body 3, and a first conductive strip 71, a second conductive strip 72 and a conductive block 73 are respectively filled in the first strip-shaped groove 31, the second strip-shaped groove 32 and the third groove 33;
the MOSFET chip 2 is provided with a source region 21, a drain region 22 and a gate region 23, the MOSFET chip 2 is mounted on the ceramic heat conducting body, and the source region 21, the drain region 22 and the gate region 23 are electrically connected with the first conductive strip 71, one end of the conductive block 73 and the second conductive strip 72 respectively;
the source pin 4 is electrically connected to the first conductive strip 71, the drain pin 5 is electrically connected to the other end of the conductive block 73, and the gate pin 6 is electrically connected to the second conductive strip 72; the positive pole and the negative pole of the fast recovery diode 9 are connected to the first conductive strip 71 and the conductive block 73 through the conductive gold wire 10.
The drain region 22 on the back side of the MOSFET chip 2 is electrically connected to one end of the conductive bump 73.
The MOSFET chip 2 is located between the first conductive strip 71 and the second conductive strip 72.
When the high-power rapid heat dissipation type MOS device is adopted, the breakdown of an MOSFET chip by induced voltage generated at the moment of cut-off is effectively prevented, so that the reliability of the device is improved; the MOSFET chip is arranged on the ceramic heat conduction body, and the source region, the drain region and the gate region are respectively and electrically connected with the first conductive strip, one end of the conductive block and the second conductive strip, so that the thermal resistance of the power MOS is reduced, the power of the device is further improved, and the advantages of high power and low power consumption of the power MOS are fully exerted; and a first strip-shaped groove, a second strip-shaped groove and a third groove are formed in one surface of the ceramic heat conduction body, a first conductive strip, a second conductive strip and a conductive block are respectively filled in the first strip-shaped groove, the second strip-shaped groove and the third groove, a source electrode pin is electrically connected with the first conductive strip, a drain electrode pin is electrically connected with the other end of the conductive block, and a grid electrode pin is electrically connected with the second conductive strip, so that the size of the device is further reduced, the number of parts in the device is also reduced, and meanwhile, the whole structure stability of the device is improved as the heat dissipation area and the body are integrated.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (4)
1. A high-power rapid heat dissipation type MOS device is characterized in that: the method comprises the following steps: the semiconductor device comprises an MOSFET chip (2), a fast recovery diode (9), a ceramic heat conduction body (3), a source pin (4), a drain pin (5) and a grid pin (6) which are positioned in an epoxy packaging body (1), wherein the source pin (4), the drain pin (5) and the grid pin (6) extend outwards from the epoxy packaging body (1);
a first strip-shaped groove (31), a second strip-shaped groove (32) and a third groove (33) are formed in one surface of the ceramic heat conduction body (3), and a first conductive strip (71), a second conductive strip (72) and a conductive block (73) are respectively filled in the first strip-shaped groove (31), the second strip-shaped groove (32) and the third groove (33);
the MOSFET chip (2) is provided with a source region (21), a drain region (22) and a gate region (23), the MOSFET chip (2) is mounted on the ceramic heat conduction body, and the source region (21), the drain region (22) and the gate region (23) are electrically connected with the first conductive strip (71), one end of the conductive block (73) and the second conductive strip (72) respectively;
the source pin (4) is electrically connected with the first conductive strip (71), the drain pin (5) is electrically connected with the other end of the conductive block (73), and the gate pin (6) is electrically connected with the second conductive strip (72); and the positive electrode and the negative electrode of the fast recovery diode (9) are connected to the first conductive strip (71) and the conductive block (73) through conductive gold wires (10).
2. The high power rapid thermal dissipating MOS device of claim 1, wherein: the drain pin (5) is located between the source pin (4) and the gate pin (6).
3. The high power rapid thermal dissipating MOS device of claim 1, wherein: the drain region (22) on the back of the MOSFET chip (2) is electrically connected with one end of the conductive block (73).
4. The high power rapid thermal dissipating MOS device of claim 1, wherein: the MOSFET chip (2) is located between the first conductive strip (71) and the second conductive strip (72).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021723069.4U CN212517180U (en) | 2020-08-18 | 2020-08-18 | High-power rapid heat dissipation type MOS device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021723069.4U CN212517180U (en) | 2020-08-18 | 2020-08-18 | High-power rapid heat dissipation type MOS device |
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| Publication Number | Publication Date |
|---|---|
| CN212517180U true CN212517180U (en) | 2021-02-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021723069.4U Active CN212517180U (en) | 2020-08-18 | 2020-08-18 | High-power rapid heat dissipation type MOS device |
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| Country | Link |
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| CN (1) | CN212517180U (en) |
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2020
- 2020-08-18 CN CN202021723069.4U patent/CN212517180U/en active Active
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