CN212810285U - High-voltage thyristor device - Google Patents
High-voltage thyristor device Download PDFInfo
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- CN212810285U CN212810285U CN202021859235.3U CN202021859235U CN212810285U CN 212810285 U CN212810285 U CN 212810285U CN 202021859235 U CN202021859235 U CN 202021859235U CN 212810285 U CN212810285 U CN 212810285U
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- silicon controlled
- electrode
- controlled rectifier
- pin
- anode
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- 239000000919 ceramic Substances 0.000 claims abstract description 41
- 238000004806 packaging method and process Methods 0.000 claims abstract description 15
- 239000004593 Epoxy Substances 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 55
- 239000010703 silicon Substances 0.000 claims description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 54
- 238000003466 welding Methods 0.000 claims description 33
- 238000009413 insulation Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 238000011084 recovery Methods 0.000 abstract 2
- 230000002349 favourable effect Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- Thyristors (AREA)
- Rectifiers (AREA)
Abstract
The utility model discloses a high-voltage thyristor device, include: the semiconductor device comprises an MOSFET chip, a fast recovery diode, a ceramic heat conduction body, a source pin, a drain pin and a grid pin which are positioned in an epoxy packaging body, wherein the source pin, the drain pin and the grid pin extend outwards from the epoxy packaging body; the source electrode pin is electrically connected with the first conductive strip, the drain electrode pin is electrically connected with the other end of the conductive block, and the grid electrode pin is electrically connected with the second conductive strip; the ceramic heat conduction body is provided with a heat dissipation plate extending out of the end face of the epoxy packaging body, and the ceramic heat conduction body in the epoxy packaging body is provided with at least one through hole; the anode and the cathode of the fast recovery diode are connected to the first conductive strip and the conductive block through conductive gold wires; the side surface of the ceramic heat conducting body, which is opposite to the MOSFET chip, extends out of the epoxy packaging body. The utility model discloses be favorable to further improving the power of device, the heat diffusion of also being convenient for prevents inside steam gets into the device, and the heat diffusion of being convenient for has improved device overall structure stability simultaneously.
Description
Technical Field
The utility model relates to a semiconductor device technical field especially relates to a high-voltage thyristor device.
Background
The thyristor is a high-power semiconductor device with a four-layer structure of three PN junctions, also called a thyristor, and the thyristor rectifier device is a very important power device and can be used for controlling high voltage and high current. Thyristor devices are used primarily in switching applications to switch the device from an off or blocking state to an on or conducting state, and vice versa. The semiconductor device has the characteristics of small volume, relatively simple structure, strong function and the like, and is one of the commonly used semiconductor devices. The device is widely applied to various electronic equipment and electronic products, and is mainly used for controllable rectification, inversion, frequency conversion, voltage regulation, contactless switch and the like.
Disclosure of Invention
The utility model aims at providing a high pressure thyristor device, this high pressure thyristor device greatly increased silicon controlled rectifier chip and ceramic insulation piece area of contact, the heat that existing does benefit to silicon controlled rectifier chip spreads ceramic insulation as early as possible on, the heat diffusion of being convenient for.
In order to achieve the above purpose, the utility model adopts the technical scheme that: a high voltage thyristor device comprising: the silicon controlled rectifier comprises a silicon controlled rectifier chip, a ceramic insulating sheet, an anode electrode, a cathode electrode and a grid electrode, wherein the ceramic insulating sheet is provided with a through hole, a conductive column is arranged in the through hole, the silicon controlled rectifier chip is positioned on one surface of the ceramic insulating sheet and covers the through hole, an anode region of the silicon controlled rectifier chip is electrically connected with one end of the conductive column through a paste welding layer, the anode electrode is positioned on the surface of the ceramic insulating sheet opposite to the silicon controlled rectifier chip, and an anode welding part of the anode electrode is electrically connected with the other end of the conductive column;
the silicon controlled rectifier package comprises a silicon controlled rectifier package body, a ceramic insulation sheet, an anode welding portion of an anode electrode, a cathode welding portion of a cathode electrode and a grid welding portion of a grid electrode, wherein the anode welding portion of the anode electrode, the cathode welding portion of the cathode electrode and the grid welding portion of the grid electrode are located in the epoxy package body, the cathode welding portion of the cathode electrode is connected with a cathode area of the silicon controlled rectifier package body through a first lead, the grid welding portion of the grid electrode is connected with a grid area of the silicon controlled rectifier package body through a second lead, and an anode pin of the.
The further improved scheme in the technical scheme is as follows:
1. in the above scheme, the number of the through holes of the ceramic heat conduction body is 2.
2. In the above scheme, the cross-sectional shape of the guide groove of the ceramic heat conduction body is arc.
3. In the scheme, the area of the end plate (118) of the metal lead is larger than that of the diode chip (111).
Because of above-mentioned technical scheme's application, compared with the prior art, the utility model have the following advantage:
the utility model discloses a high-voltage thyristor device, its ceramic insulating piece is opened with the through-hole, is provided with a conducting post in this through-hole, the silicon controlled rectifier chip is located a surface of ceramic insulating piece and covers the through-hole, the positive pole district of this silicon controlled rectifier chip is connected with one end electricity of said conducting post through a soldering paste layer, the positive pole electrode is located the surface that ceramic insulating piece and silicon controlled rectifier chip carried on the back mutually, the positive pole welding part of this positive pole electrode is connected with the other end electricity of conducting post; the contact area between the silicon controlled chip and the ceramic insulation sheet is greatly increased, and the silicon controlled chip is in direct contact with the ceramic insulation sheet, so that heat of the silicon controlled chip can be diffused to the ceramic insulation sheet as soon as possible, heat diffusion is facilitated, the vertical distance between the silicon controlled chip and the anode electrode is increased, and the reliability of the device is improved.
Drawings
Fig. 1 is a schematic structural diagram of a high-voltage thyristor device according to the present invention;
FIG. 2 is a schematic cross-sectional view of FIG. 1.
In the above drawings: 1. a silicon controlled chip; 101. an anode region; 102. a cathode region; 103. a gate region; 2. a ceramic insulating sheet; 21. a through hole; 3. an anode electrode; 31. an anode weld; 32. an anode pin; 4. a cathode electrode; 41. a cathode weld; 42. a cathode pin; 5. a gate electrode; 51. a gate electrode bonding part; 52. a gate pin; 6. a conductive post; 7. welding a paste layer; 8. an epoxy package; 9. a first conductive line; 10. a second conductive line.
Detailed Description
Example 1: a high voltage thyristor device comprising: the silicon controlled rectifier comprises a silicon controlled rectifier chip 1, a ceramic insulating sheet 2, an anode electrode 3, a cathode electrode 4 and a grid electrode 5, wherein the ceramic insulating sheet 2 is provided with a through hole 21, a conductive column 6 is arranged in the through hole 21, the silicon controlled rectifier chip 1 is positioned on one surface of the ceramic insulating sheet 2 and covers the through hole 21, an anode region 101 of the silicon controlled rectifier chip 1 is electrically connected with one end of the conductive column 6 through a paste welding layer 7, the anode electrode 3 is positioned on the surface of the ceramic insulating sheet 2, which is opposite to the silicon controlled rectifier chip 1, and an anode welding part 31 of the anode electrode 3 is electrically connected with the other end of the conductive column;
the silicon controlled rectifier chip 1, the ceramic insulation sheet 2, the anode welding part 31 of the anode electrode 3, the cathode welding part 41 of the cathode electrode 4 and the gate welding part 51 of the gate electrode 5 are located in the epoxy packaging body 8, the cathode welding part 41 of the cathode electrode 4 is connected with the cathode region 102 of the silicon controlled rectifier chip 1 through the first lead 9, the gate welding part of the gate electrode 5 is connected with the gate region 103 of the silicon controlled rectifier chip 1 through the second lead 10, and the anode pin 32 of the anode electrode 3, the cathode pin 42 of the cathode electrode 4 and the gate pin 52 of the gate electrode 5 extend out of the epoxy packaging body 8.
The first conductor 9 is a strip conductor.
Example 2: a high voltage thyristor device comprising: the silicon controlled rectifier comprises a silicon controlled rectifier chip 1, a ceramic insulating sheet 2, an anode electrode 3, a cathode electrode 4 and a grid electrode 5, wherein the ceramic insulating sheet 2 is provided with a through hole 21, a conductive column 6 is arranged in the through hole 21, the silicon controlled rectifier chip 1 is positioned on one surface of the ceramic insulating sheet 2 and covers the through hole 21, an anode region 101 of the silicon controlled rectifier chip 1 is electrically connected with one end of the conductive column 6 through a paste welding layer 7, the anode electrode 3 is positioned on the surface of the ceramic insulating sheet 2, which is opposite to the silicon controlled rectifier chip 1, and an anode welding part 31 of the anode electrode 3 is electrically connected with the other end of the conductive column;
the silicon controlled rectifier chip 1, the ceramic insulation sheet 2, the anode welding part 31 of the anode electrode 3, the cathode welding part 41 of the cathode electrode 4 and the gate welding part 51 of the gate electrode 5 are located in the epoxy packaging body 8, the cathode welding part 41 of the cathode electrode 4 is connected with the cathode region 102 of the silicon controlled rectifier chip 1 through the first lead 9, the gate welding part of the gate electrode 5 is connected with the gate region 103 of the silicon controlled rectifier chip 1 through the second lead 10, and the anode pin 32 of the anode electrode 3, the cathode pin 42 of the cathode electrode 4 and the gate pin 52 of the gate electrode 5 extend out of the epoxy packaging body 8.
The first conductor 9 is a strip conductor.
The cathode electrode 4 is located on the same horizontal plane as the silicon controlled device 1.
The gate electrode 5 is located on the same horizontal plane as the silicon controlled device 1.
When the high-voltage thyristor device is adopted, the ceramic insulating sheet is provided with a through hole, a conductive column is arranged in the through hole, the silicon controlled rectifier chip is positioned on one surface of the ceramic insulating sheet and covers the through hole, an anode region of the silicon controlled rectifier chip is electrically connected with one end of the conductive column through a solder paste layer, the anode electrode is positioned on the surface of the ceramic insulating sheet opposite to the silicon controlled rectifier chip, and an anode welding part of the anode electrode is electrically connected with the other end of the conductive column; the contact area between the silicon controlled chip and the ceramic insulation sheet is greatly increased, and the silicon controlled chip is in direct contact with the ceramic insulation sheet, so that heat of the silicon controlled chip can be diffused to the ceramic insulation sheet as soon as possible, heat diffusion is facilitated, the vertical distance between the silicon controlled chip and the anode electrode is increased, and the reliability of the device is improved.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the embodiments is to enable people skilled in the art to understand the contents of the present invention and to implement the present invention, which cannot limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered by the protection scope of the present invention.
Claims (4)
1. A high voltage thyristor device, comprising: the method comprises the following steps: the silicon controlled rectifier comprises a silicon controlled rectifier chip (1), a ceramic insulating sheet (2), an anode electrode (3), a cathode electrode (4) and a grid electrode (5), wherein the ceramic insulating sheet (2) is provided with a through hole (21), a conductive column (6) is arranged in the through hole (21), the silicon controlled rectifier chip (1) is positioned on one surface of the ceramic insulating sheet (2) and covers the through hole (21), an anode region (101) of the silicon controlled rectifier chip (1) is electrically connected with one end of the conductive column (6) through a paste welding layer (7), the anode electrode (3) is positioned on the surface of the ceramic insulating sheet (2) back to the silicon controlled rectifier chip (1), and an anode welding part (31) of the anode electrode (3) is electrically connected with the other end of the conductive column (6);
the silicon controlled rectifier packaging structure is characterized in that an anode welding part (31) of the silicon controlled rectifier packaging structure (1), the ceramic insulation sheet (2), the anode electrode (3), a cathode welding part (41) of the cathode electrode (4) and a gate welding part (51) of the gate electrode (5) are located in the epoxy packaging body (8), the cathode welding part (41) of the cathode electrode (4) is connected with a cathode region (102) of the silicon controlled rectifier packaging structure (1) through a first lead (9), the gate region (103) of the gate electrode (5) is connected with a gate region (103) of the silicon controlled rectifier packaging structure (1) through a second lead (10), and an anode pin (32) of the anode electrode (3), a cathode pin (42) of the cathode electrode (4) and a gate pin (52) of the gate electrode (5) extend out of the epoxy packaging body (8).
2. The high voltage thyristor device of claim 1, wherein: the first conducting wire (9) is a ribbon-shaped conducting wire strip.
3. The high voltage thyristor device of claim 1, wherein: the cathode electrode (4) and the silicon controlled rectifier chip (1) are positioned on the same horizontal plane.
4. The high voltage thyristor device of claim 1, wherein: the grid electrode (5) and the silicon controlled rectifier chip (1) are positioned on the same horizontal plane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021859235.3U CN212810285U (en) | 2020-08-31 | 2020-08-31 | High-voltage thyristor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021859235.3U CN212810285U (en) | 2020-08-31 | 2020-08-31 | High-voltage thyristor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212810285U true CN212810285U (en) | 2021-03-26 |
Family
ID=75087905
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021859235.3U Expired - Fee Related CN212810285U (en) | 2020-08-31 | 2020-08-31 | High-voltage thyristor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212810285U (en) |
-
2020
- 2020-08-31 CN CN202021859235.3U patent/CN212810285U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210326 |