CN211062720U - Novel L ED light source structure - Google Patents

Abstract

The utility model discloses a novel L ED light source structure, novel L ED light source structure includes silver-plated copper post, built-in circuit substrate, L ED flip chip, the fluorescent layer, silica gel, built-in circuit structure plastic casing, the cylinder outside of silver-plated copper post upper end is equipped with a plurality of planes, each plane evenly coats high temperature tin cream, built-in circuit substrate pastes on the plane of cylinder, link firmly and switch on through high temperature reflow soldering technology, built-in circuit substrate coats first, second low temperature tin cream respectively at positive negative pole both ends, L ED flip chip positive negative pole respectively with first, second low temperature tin cream contact, rethread low temperature reflow soldering technology links firmly and switches on, L ED flip chip surface is formed with the fluorescent layer through the process of dusting or pasting the fluorescent film, built-in circuit structure plastic casing is located on the built-in circuit substrate of each plane of cylinder, make built-in circuit substrate parallel connection, built-in circuit structure plastic casing draws forth high temperature resistant insulating layer wire alone as the positive pole, silica gel an organic whole is fixed in.

Description

Novel L ED light source structure

The technical field is as follows:

the utility model relates to the technical field of lighting technology, refer in particular to a novel L ED light source structure.

Background art:

1. in the prior art, because of the limitation of multiple reflow soldering applications of an application end, the L ED flip chip is mostly welded by adopting a high-temperature reflow soldering process, so that the internal structure of a small amount of L ED flip chips is damaged, the quality of electric leakage, high voltage and serious light attenuation and the product reliability risk occur, and the low-temperature solder paste is adopted to weld the L ED flip chips by adopting a low-temperature reflow soldering process, so that the corresponding risk can be effectively reduced, and the reliability and the quality consistency of the product are ensured.

2. However, the L ED light source with high power generates a large amount of heat when in use, and the accumulated heat cannot be timely and effectively dissipated, which seriously affects the luminous efficiency and the service life of the L ED light source.

3. Most L ED light sources in the market use under adverse circumstances and easily appear the problem such as oxidation, vulcanization and lead to L ED light decay seriously, use the problem that easily appears the vulcanization under the environment of sulfur dioxide for a long time and lead to inefficacy and the serious problem of light decay for the light source for car, if increase outside the external seal glue outside L ED light source and protect the functional area then effectively reduce the risk that oxidation, vulcanization, pollution and phosphor powder drop off and leak blue light in the inside functional area.

4. Most single L ED light sources all are less at present, and if a single small-size high-power L ED light source needs to meet the requirements of all-round light-emitting application, a new product needs to meet the requirements.

In view of the fact that light attenuation easily occurs in multiple reflow soldering of the L ED flip chip, the L ED light source is easy to oxidize, vulcanize and pollute in severe environment, light attenuation or failure caused by falling of fluorescent powder and the requirements of all-directional light source light emitting angles, the inventor provides a novel L ED light source structure and a manufacturing method to meet application requirements.

The utility model has the following contents:

an object of the utility model is to overcome prior art not enough, provide a novel L ED light source structure.

In order to solve the technical problem, the novel L ED light source structure comprises a silver-plated copper column, a built-in circuit substrate, L ED flip chips, a fluorescent layer, silica gel and a plastic casing with a built-in circuit structure, wherein a plurality of planes are arranged on the outer side of a cylinder at the upper end of the silver-plated copper column, high-temperature tin paste is uniformly coated on each plane, the built-in circuit substrate is attached to the plane of the cylinder, the high-temperature tin paste is solidified through a high-temperature reflow soldering process to attach the built-in circuit substrate to the plane of the cylinder, a first low-temperature tin paste and a second low-temperature tin paste are respectively coated at the positions of a positive electrode and a negative electrode at the two ends of the positive electrode and the negative electrode at the position of the built-in circuit substrate at the position of at least one L ED flip chip, the positive electrode at the bottom of the L ED chip is respectively contacted with the first low-temperature tin paste and the second low-temperature tin paste, the L ED chip is fixedly connected with the built-in circuit substrate and forms a conduction circuit, the peripheral plastic casing with the built-in which the plastic casing, the built-in circuit structure, the plastic casing is connected with the built-in parallel by a high-temperature plastic casing, and the built-in-circuit structure.

Further, in the above technical solution, the built-in circuit substrate is any one of an aluminum nitride ceramic substrate, an aluminum oxide ceramic substrate, a superconducting aluminum substrate, or a copper substrate, wherein at least one negative electrode is disposed on an upper portion of the built-in circuit substrate, at least one positive electrode is disposed on a lower portion of the built-in circuit substrate, and a negative electrode soldering surface electrically connected to the negative electrode and having electric and thermal conduction effects is disposed on a back surface of the built-in circuit substrate.

Furthermore, in the above technical scheme, the silver-plated copper column is made of T2 red copper material with good conductivity and heat conductivity, and the thickness of the silver-plated layer on the surface is more than 40u ″.

Further, in the above technical scheme, the high temperature solder paste is tin-antimony alloy, and the melting point is about 250 ℃; the first low-temperature tin paste and the second low-temperature tin paste are both tin-bismuth alloy, and the melting point is 138 ℃.

Further, in the above technical solution, the L ED flip chip is any one of a L ED flip blue chip, a L ED flip red chip, and a L ED flip green chip.

Furthermore, in the above technical solution, the plastic case with built-in circuit structure includes an ABS plastic sleeve and a copper sheet integrally formed by injection molding, and the conductive contact of the copper sheet is further disposed on the inner wall of the ABS plastic sleeve and is butted with the positive electrode of the built-in circuit substrate, so that all the built-in circuit substrates are connected in parallel; and the high-temperature-resistant insulating layer lead is electrically connected with the copper sheet.

Further, in the above technical solution, the high temperature resistant insulation layer wire is bonded to the column by a super glue to form a whole.

After the technical scheme is adopted, the utility model discloses a silver-plated copper post is as the support, and it has good heat conductivility, can in time and effectively give off the heat that L ED flip chip produced, guarantees the utility model discloses a luminous efficacy and life, the utility model discloses in cylinder outlying chip area through encapsulating mode integrated into one piece silica gel to this protects to the functional area then effectively to reduce the risk that oxidation, vulcanization, pollution and phosphor powder drop and leak the blue light of internal functional area appearance, the utility model discloses paste a plurality of built-in circuit base plates respectively on a plurality of planes of cylinder outlying, and be provided with at least one L ED flip chip on every built-in circuit base plate to this realizes all-round luminous purpose, can satisfy different operation requirements.

Description of the drawings:

FIG. 1 is a structural diagram of a silver-plated copper pillar according to the present invention;

FIG. 2 is a schematic top view of a silver-plated copper pillar according to the present invention;

FIG. 3 is a schematic view of the built-in circuit board of the present invention attached to each side of the column by a high temperature reflow soldering process;

FIG. 4 is a schematic view of an L ED flip chip attached to a built-in circuit substrate by a low temperature reflow process;

fig. 5 is a schematic front view of the circuit board of the present invention;

FIG. 6 is a schematic view of the reverse side of the circuit board of the present invention;

FIG. 7 is a schematic view of L ED flip chip after surface spraying of phosphor;

FIG. 8 is a schematic view of the plastic housing with built-in circuit structure according to the present invention after being assembled;

FIG. 9 is a schematic view of the plastic housing with a built-in circuit structure of the present invention;

FIG. 10 is a schematic diagram of the circuit connection of the plastic case with the built-in circuit structure of the present invention;

fig. 11 is a schematic structural view of an outer sealant injection mold of the L ED light source structure of the present invention;

fig. 12 is an assembly schematic diagram of the L ED light source structure semi-finished product placed in the injected glue model of the present invention;

fig. 13 is a schematic diagram of the L ED light source structure of the present invention.

The specific implementation mode is as follows:

the present invention will be further described with reference to the following specific embodiments and accompanying drawings.

The technical scheme is that the LED light source structure comprises a silver-plated copper column 1, a built-in circuit substrate 2, a L ED flip chip 3, a fluorescent layer 4, a silica gel 5 and a plastic casing 6 with a built-in circuit structure, a plurality of planes are arranged outside a cylinder 11 at the upper end of the silver-plated copper column 1, high-temperature solder paste is uniformly coated on each plane, the built-in circuit substrate 2 is attached to the plane of the cylinder 11, the high-temperature solder paste is solidified by a high-temperature reflow soldering process so as to attach the built-in circuit substrate 2 to the plane of the cylinder 11, a first low-temperature solder paste and a second low-temperature solder paste are respectively coated at the two ends of a positive electrode and a negative electrode by a low-temperature solder paste process, at least one sheet L ED flip chip 3 is placed at a chip placement position on the built-in circuit substrate 8652, and the positive electrode and negative electrode at the bottom of the L ED chip 3 is respectively contacted with the first low-temperature solder paste and the second low-temperature solder paste, a low-temperature solder paste is further contacted by a low-temperature reflow soldering process so that L LED chip L chip 3 is fixedly connected with the built-in a built-in circuit substrate 4832 and a built-in-up circuit substrate with a built-up circuit substrate, a built-up circuit substrate with a built-in-up circuit substrate with a built-in high-up circuit substrate with a built-in circuit substrate with a high-temperature light-temperature circuit substrate with a high-temperature wire insulation film insulation layer circuit substrate with a built-temperature wire sealing adhesive powder-resistant circuit substrate with a built-temperature wire with a high-temperature wire sealing adhesive.

The built-in circuit substrate 2 is any one of an aluminum nitride ceramic substrate, an aluminum oxide ceramic substrate, a superconducting aluminum substrate or a copper substrate, wherein at least one negative electrode 21 is arranged on the upper portion of the built-in circuit substrate 2, at least one positive electrode 20 is arranged on the lower portion of the built-in circuit substrate 2, a negative electrode welding surface 22 which is electrically connected with the negative electrode 21 and has electric conduction and heat conduction effects is arranged on the back of the built-in circuit substrate 2, and meanwhile, the circuit design of the built-in circuit substrate can be changed according to actual requirements so as to achieve the effects of serial-parallel connection and polarity change of L ED flip chips.

The silver-plated copper column is made of T2 red copper material with good electric conductivity and thermal conductivity, and the thickness of the silver-plated layer on the surface of the silver-plated copper column is more than 40 u'.

The built-in circuit substrate adopt high temperature tin cream to paste in each plane of cylinder, and L ED flip chip adopts low temperature tin cream to weld on built-in circuit substrate, wherein high temperature tin cream is tin antimony alloy, the fusing point is about 250 ℃, low temperature tin cream is the tin bismuth alloy, the fusing point is 138 ℃, this kind of secondary reflow soldering technology adopts high temperature and low temperature tin cream technology in proper order and does not influence the welding of primary base plate, L ED flip chip's welding adopts low temperature technology to avoid its inner structure damage to appear electric leakage, the risk of voltage height and light decay, effectively promote the quality of product.

Specifically, the novel L ED light source structure is not limited to be formed by uniformly exciting a L ED flip blue light chip and fluorescent powder to form white light, and can be designed to be formed into a single-color or multi-color mixed integrated light source structure by other types of flip chips such as a L ED flip red light chip, a L ED flip green light chip and the like.

The plastic case 6 with the built-in circuit structure comprises an ABS plastic sleeve 61 and a copper sheet 62 which are integrally formed in an injection molding mode, the copper sheet 62 forms an internal circuit, and a conducting contact 621 of the copper sheet 62 is also arranged on the inner wall of the ABS plastic sleeve 61 and is butted with a positive electrode 20 of the built-in circuit substrate 2 so as to enable all the built-in circuit substrates 2 to be connected in parallel; the high temperature resistant insulation layer wire 60 is electrically connected with the copper sheet 62. The high temperature resistant insulating layer wire 60 is bonded with the column 11 by strong glue to form a whole, and the design is beneficial to circuit connection and product appearance.

The step of adding the outer-sealing silica gel in the chip area is to place a semi-finished product light emitting area which is subjected to powder spraying or fluorescent film pasting through injecting a certain amount of silica gel into the model 7 in the model and ensure that the chip area can be completely covered by glue, and then place the semi-finished product light emitting area in the oven for baking to ensure that the glue is completely cured, the silica gel can ensure that an inner functional area coating or a metal surface is prevented from being oxidized, vulcanized and fluorescent powder falls off to leak blue light, and the adhesion influences of pollutants, water vapor and the like are avoided, so that the oxidation resistance, the vulcanization resistance and the waterproof performance of the L.

To sum up, the utility model discloses a silver-plated copper post is as the support, and it has good heat conductivility, can in time and effectively give off L ED flip chip produced heat, guarantees the utility model discloses a luminous efficacy and life, the utility model discloses in cylinder 11 outlying chip region through encapsulating mode integrated into one piece silica gel to this protects the risk that then effectively reduces the internal function district and oxidation, vulcanization, pollution and phosphor powder and drop and leak the blue light to the functional area, the utility model discloses paste a plurality of built-in circuit base plates 2 respectively on a plurality of planes of cylinder 11 outlying, and be provided with at least one L ED flip chip 3 on every built-in circuit base plate 2 to this realizes all-round luminous purpose, can satisfy different operation requirements.

The manufacturing method of the utility model comprises the following manufacturing steps:

A. brushing solder paste: printing high-temperature tin paste on a plurality of planes of a cylinder body at the upper end of the silver-plated copper cylinder, wherein the printing of the high-temperature tin paste needs a jig for controlling the thickness uniformity of the high-temperature tin paste;

B. pasting a substrate: pasting the back of the built-in circuit substrate on each plane coated with the tin paste silver-plated copper column, ensuring that the back of the built-in circuit substrate is completely contacted with the high-temperature tin paste and is arranged on the column body in order, and controlling the online time within 4H after the process is finished;

C. high-temperature reflow soldering: placing the silver-plated copper column pasted with the built-in circuit substrate into a jig, and solidifying high-temperature tin paste through a high-temperature reflow soldering process so as to enable the built-in circuit substrate to be completely soldered on the column body, wherein the reflow soldering maximum temperature is 280-310 ℃, and meanwhile, the soldering cavity condition of the soldered material is observed through X-ray, and the operation can be carried out until the cavity rate is less than 5%;

D. and (3) low-temperature solder paste dispensing: injecting low-temperature solder paste into a glue cavity of a high-precision glue dispenser, and precisely dispensing the low-temperature solder paste onto the positive electrode and the negative electrode of the built-in circuit substrate through the high-precision glue dispenser;

E. die bonding, namely placing an L ED flip chip above low-temperature solder paste by a high-precision die bonder in an adsorption manner, fixing the L ED flip chip on a built-in circuit substrate by a low-temperature reflow soldering process, wherein the low-temperature reflow soldering temperature is less than or equal to 200 ℃, simultaneously observing the soldering cavity condition of the soldered material by X-ray, ensuring that the cavity rate is less than 3 percent,

F. cleaning, namely placing the semi-finished product after die bonding in a plasma cleaning machine for cleaning to ensure that the surfaces of the cylinder, the built-in circuit substrate and the L ED flip chip are in a clean state, wherein the online time of the cleaned material before flowing into the next procedure cannot exceed 4H, the cleaned material needs to be cleaned again when the online time exceeds 4H, and the cleaning frequency does not exceed 3 times;

G. powder spraying, namely placing fluorescent glue prepared by combining fluorescent powder and silica gel in a glue cavity of a high-precision powder sprayer, fixing a semi-finished product which is subjected to die bonding in a powder spraying fixing position by using a jig, and performing powder spraying treatment on the surface of an L ED flip chip by using the high-precision powder sprayer to form a fluorescent layer, wherein the jig rotates at a constant speed during powder spraying to ensure the coverage uniformity of the fluorescent glue on the surface of the L ED flip chip;

H. assembling a plastic sleeve: combining a copper sheet with an ABS plastic material through an injection mold to form a plastic casing with a built-in circuit structure, wherein a conductive contact of the copper sheet exposed on the inner wall of the plastic casing with the built-in circuit structure is butted with a positive electrode of the built-in circuit substrate, so that all the built-in circuit substrates are connected in parallel, and a high-temperature-resistant insulating layer lead is separately led out of the plastic casing with the built-in circuit structure to serve as a positive electrode;

I. pouring glue, namely quantitatively injecting the A/B silica gel which is prepared, mixed and vacuumized into a die cavity through a high-precision dispenser, assembling a semi-finished product assembled by the plastic suite through the processes into the die cavity, and placing the semi-finished product in a high-temperature oven for segmented baking, wherein the primary curing condition is 135 ℃/1.5H, the complete curing baking condition is 150 ℃/4H, the semi-finished product after the plastic suite is assembled is completely cured by baking, and the periphery of the semi-finished product after the plastic suite is assembled is integrally molded with the silica gel to form an L ED light source structure;

J. and (3) light splitting, namely setting corresponding BINs in a test system, wherein each BIN comprises a voltage, brightness, wavelength, color rendering index and color tolerance set range, placing the formed L ED light source structure in a L ED tester containing an integrating sphere through a test fixture for testing, and simultaneously placing the BIN material together to ensure the consistency of photoelectric parameters of the BIN material.

To sum up, the utility model discloses a silver-plated copper post is as the support, and it has good heat conductivility, can in time and effectively give off L ED flip chip produced heat, guarantees the utility model discloses a luminous efficacy and life, the utility model discloses in cylinder 11 outlying chip region through encapsulating mode integrated into one piece silica gel to this protects the risk that then effectively reduces the internal function district and oxidation, vulcanization, pollution and phosphor powder and drop and leak the blue light to the functional area, the utility model discloses paste a plurality of built-in circuit base plates 2 respectively on a plurality of planes of cylinder 11 outlying, and be provided with at least one L ED flip chip 3 on every built-in circuit base plate 2 to this realizes all-round luminous purpose, can satisfy different operation requirements.

Of course, the above description is only an exemplary embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes and modifications made by the constructions, features, and principles of the present invention in accordance with the claims of the present invention are intended to be included in the scope of the present invention.

Claims (7)

1. A novel L ED light source structure is characterized by comprising a silver-plated copper column (1), a built-in circuit substrate (2), L ED flip chips (3), a fluorescent layer (4), silica gel (5) and a plastic casing (6) with a built-in circuit structure, wherein a plurality of planes are arranged on the outer side of a cylinder (11) at the upper end of the silver-plated copper column (1), high-temperature tin paste is uniformly coated on each plane, the built-in circuit substrate (2) is attached to the plane of the cylinder (11), the high-temperature tin paste is solidified through a high-temperature reflow soldering process so as to attach the built-in circuit substrate (2) to the plane of the cylinder (11), chip placement positions on the built-in circuit substrate (2) are respectively coated with first low-temperature tin paste and second low-temperature tin paste at the two ends of a positive electrode and a negative electrode through a point low-temperature tin paste process, at least one L ED chip (3) is placed at the chip placement position on the built-in circuit substrate (2), the bottom of the built-in circuit substrate (3) is respectively contacted with the first low-temperature tin paste and the second low-temperature tin paste, the positive electrode reflow soldering process leads the built-in circuit substrate (3) are connected with the plastic casing (2) in parallel with the built-in a powder injection soldering process or the plastic casing (2), the plastic casing (6) to form a powder injection soldering process, the plastic casing (2), the built-in which is connected with the built-in a high-in plastic casing (2), the built-in circuit structure, the built-in circuit structure, the plastic casing (2), the plastic casing (.

2. The structure of a novel L ED light source according to claim 1, wherein the built-in circuit substrate (2) is any one of an aluminum nitride ceramic substrate, an aluminum oxide ceramic substrate, a superconductive aluminum substrate or a copper substrate, wherein at least one negative electrode (21) is disposed on the upper portion of the built-in circuit substrate (2), at least one positive electrode (20) is disposed on the lower portion of the built-in circuit substrate (2), and a negative electrode soldering surface (22) electrically connected with the negative electrode (21) and having electric and thermal conduction effects is disposed on the back of the built-in circuit substrate (2).

3. The novel L ED light source structure of claim 1, wherein the silver-plated copper pillar is made of T2 red copper material with good electrical and thermal conductivity, and the thickness of the silver-plated layer on the surface is more than 40u ".

4. The novel L ED light source structure of claim 1, wherein the high temperature solder paste is a tin-antimony alloy with a melting point of about 250 ℃, and the first and second low temperature solder pastes are both tin-bismuth alloys with a melting point of 138 ℃.

5. The novel L ED light source structure of claim 1, wherein the L ED flip chip (3) is any one of L ED flip blue chip, L ED flip red chip, L ED flip green chip.

6. The novel L ED light source structure as claimed in any one of claims 1-5, wherein the plastic housing (6) with built-in circuit structure comprises an ABS plastic sleeve (61) and a copper sheet (62) integrally formed by injection molding, the conductive contact of the copper sheet (62) is also disposed on the inner wall of the ABS plastic sleeve (61) and is butted with the positive electrode (20) of the built-in circuit substrate (2) to connect all the built-in circuit substrates (2) in parallel, and the high temperature resistant insulation layer lead (60) is electrically connected with the copper sheet (62).

7. The structure of a L ED light source as claimed in claim 6, wherein the high temperature-resistant insulating layer conductor (60) is bonded to the column (11) by super glue to form a whole.

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