CN111106102A - Novel LED light source structure and manufacturing method thereof - Google Patents
Novel LED light source structure and manufacturing method thereof Download PDFInfo
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- CN111106102A CN111106102A CN202010039021.XA CN202010039021A CN111106102A CN 111106102 A CN111106102 A CN 111106102A CN 202010039021 A CN202010039021 A CN 202010039021A CN 111106102 A CN111106102 A CN 111106102A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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Abstract
The invention discloses a novel LED light source structure and a manufacturing method thereof, wherein the novel LED light source structure comprises: the LED light source comprises silver-plated copper columns, a built-in circuit substrate, an LED flip chip, a fluorescent layer, silica gel and a plastic casing with a built-in circuit structure; the outer side of the cylinder at the upper end of the silver-plated copper cylinder is provided with a plurality of planes, each plane is uniformly coated with high-temperature tin paste, and the built-in circuit substrate is attached to the plane of the cylinder and is fixedly connected and conducted through a high-temperature reflow soldering process; the built-in circuit substrate is coated with a first low-temperature tin paste and a second low-temperature tin paste at the two ends of the positive electrode and the negative electrode respectively, the positive electrode and the negative electrode of the LED flip chip are contacted with the first low-temperature tin paste and the second low-temperature tin paste respectively, and are fixedly connected and conducted through a low-temperature reflow soldering process; fluorescent layers are formed on the surfaces of the LED flip chips through a powder spraying or fluorescent film pasting process, and the plastic sleeve shells with the built-in circuit structures are sleeved on the built-in circuit substrates on all planes of the columns to enable the built-in circuit substrates to be connected in parallel; a high-temperature-resistant insulating layer wire is separately led out of the plastic casing with the built-in circuit structure to serve as a positive electrode, and the silica gel is integrally fixed in a chip area on the periphery of the cylinder.
Description
The technical field is as follows:
the invention relates to the technical field of illumination, in particular to a novel LED light source structure and a manufacturing method thereof.
Background art:
1. in the prior art, due to the limitation of multiple reflow soldering applications of an application end, most of the LED flip chips are welded by a high-temperature reflow soldering process, so that the internal structures of a small number of LED flip chips are damaged, the quality of electric leakage, high voltage and serious light attenuation and the product reliability risk occur, and the corresponding risk can be effectively reduced by welding the LED chips by low-temperature solder paste through the low-temperature reflow soldering process, so that the reliability and the quality consistency of the products are ensured.
2. With the wide use of LED light sources in the lighting application market, people have higher and higher requirements on LED light sources, and the LED light sources are continuously pursued to have stable characteristics of high luminous efficiency and long service life. However, when the high-power LED light source is used, a large amount of heat is generated, and the accumulated heat cannot be dissipated timely and effectively, which will seriously affect the light emitting efficiency and the service life of the LED light source.
3. Most LED light sources in the market use and easily appear problem such as oxidation, vulcanization under adverse circumstances at present and lead to LED light decay seriously, use the problem that easily appears the vulcanization under the environment of sulfur dioxide for a long time like the light source for cars and lead to inefficacy and the serious problem of light decay, if increase outside the sealing gum outside the LED light source and protect the functional area then effectively reduce inside functional area and appear oxidation, vulcanization, pollution and fluorescent powder and drop and leak the risk of blue light.
4. At present, the light emitting angles of most single LED light sources are small, and if the single high-power LED light source with small volume needs to meet the requirements of omnibearing light emitting application, a new product needs to meet the requirements.
In view of the fact that light decay is easy to occur in the LED flip chip after multiple reflow soldering, the LED light source is easy to oxidize, vulcanize and pollute when used in a severe environment, the light decay or failure is caused by the falling of fluorescent powder, and the requirements of the light emitting angle of the omnibearing light source are met, the inventor provides a novel LED light source structure and a manufacturing method to meet the application requirements.
The invention content is as follows:
the invention aims to overcome the defects of the prior art and provides a novel LED light source structure and a manufacturing method thereof.
In order to solve the technical problem, the invention adopts the following first technical scheme: this novel LED light source structure includes: the LED light source comprises silver-plated copper columns, a built-in circuit substrate, an LED flip chip, a fluorescent layer, silica gel and a plastic casing with a built-in circuit structure; the outer side of a cylinder at the upper end of the silver-plated copper column is provided with a plurality of planes, each plane is uniformly coated with high-temperature tin paste, a built-in circuit substrate is attached to the plane of the cylinder, the high-temperature tin paste is solidified through a high-temperature reflow soldering process so as to attach the built-in circuit substrate to the plane of the cylinder, a chip placing position on the built-in circuit substrate is respectively coated with first low-temperature tin paste and second low-temperature tin paste at the positive and negative ends through a point low-temperature tin paste process, at least one LED flip chip is placed at the chip placing position on the built-in circuit substrate, the positive and negative electrodes at the bottom of the LED flip chip are respectively contacted with the first low-temperature tin paste and the second low-temperature tin paste, and the LED flip chip is fixedly connected; the surface of the LED flip chip is provided with a fluorescent layer through a process of powder spraying or fluorescent film pasting, a jig shields a positive electrode of the built-in circuit substrate to reserve a welding surface, the built-in circuit structure plastic casing is sleeved on the built-in circuit substrate on each plane of the cylinder, and an internal circuit of the built-in circuit structure plastic casing is connected with the positive electrode of the built-in circuit substrate in parallel; the plastic casing with the built-in circuit structure is characterized in that a high-temperature-resistant insulating layer wire is led out independently to serve as a positive electrode, and the silica gel is integrally fixed in a chip area on the periphery of the cylinder in a glue pouring mode.
Further, in the above technical solution, the built-in circuit substrate is any one of an aluminum nitride ceramic substrate, an aluminum oxide ceramic substrate, a superconducting aluminum substrate, or a copper substrate, wherein at least one negative electrode is disposed on an upper portion of the built-in circuit substrate, at least one positive electrode is disposed on a lower portion of the built-in circuit substrate, and a negative electrode soldering surface electrically connected to the negative electrode and having electric and thermal conduction effects is disposed on a back surface of the built-in circuit substrate.
Furthermore, in the above technical scheme, the silver-plated copper column is made of T2 red copper material with good conductivity and heat conductivity, and the thickness of the silver-plated layer on the surface is more than 40u ″.
Further, in the above technical scheme, the high temperature solder paste is tin-antimony alloy, and the melting point is about 250 ℃; the first low-temperature tin paste and the second low-temperature tin paste are both tin-bismuth alloy, and the melting point is 138 ℃.
Further, in the above technical solution, the LED flip chip is any one of an LED flip blue chip, an LED flip red chip, and an LED flip green chip.
Furthermore, in the above technical solution, the plastic case with built-in circuit structure includes an ABS plastic sleeve and a copper sheet integrally formed by injection molding, and the conductive contact of the copper sheet is further disposed on the inner wall of the ABS plastic sleeve and is butted with the positive electrode of the built-in circuit substrate, so that all the built-in circuit substrates are connected in parallel; and the high-temperature-resistant insulating layer lead is electrically connected with the copper sheet.
Further, in the above technical solution, the high temperature resistant insulation layer wire is bonded to the column by a super glue to form a whole.
In order to solve the above technical problem, the present invention adopts the following second technical solution: the manufacturing method of the novel LED light source structure comprises the following manufacturing steps:
A. brushing solder paste: printing high-temperature tin paste on a plurality of planes of a cylinder body at the upper end of the silver-plated copper cylinder, wherein the printing of the high-temperature tin paste needs a jig for controlling the thickness uniformity of the high-temperature tin paste;
B. pasting a substrate: pasting the back of the built-in circuit substrate on each plane coated with the tin paste silver-plated copper column, ensuring that the back of the built-in circuit substrate is completely contacted with the high-temperature tin paste and is arranged on the column body in order, and controlling the online time within 4H after the process is finished;
C. high-temperature reflow soldering: placing the silver-plated copper column pasted with the built-in circuit substrate into a jig, and solidifying high-temperature tin paste through a high-temperature reflow soldering process so as to enable the built-in circuit substrate to be completely soldered on the column body, wherein the reflow soldering maximum temperature is 280-310 ℃, and meanwhile, the soldering cavity condition of the soldered material is observed through X-ray, and the operation can be carried out until the cavity rate is less than 5%;
D. and (3) low-temperature solder paste dispensing: injecting low-temperature solder paste into a glue cavity of a high-precision glue dispenser, and precisely dispensing the low-temperature solder paste onto the positive electrode and the negative electrode of the built-in circuit substrate through the high-precision glue dispenser;
E. and (3) crystal solidification: placing an LED flip chip above low-temperature solder paste by a high-precision die bonder in an adsorption manner, fixing the LED flip chip on a built-in circuit substrate by a low-temperature reflow soldering process, wherein the low-temperature reflow soldering temperature is less than or equal to 200 ℃, and meanwhile, the soldering cavity condition of the soldered material is observed by X-ray, and the voidage is less than 3% so as to operate;
F. cleaning: placing the semi-finished product after die bonding in a plasma cleaning machine for cleaning, ensuring that the surfaces of the cylinder, the built-in circuit substrate and the LED flip chip are in a clean state, ensuring that the online time of the cleaned material before flowing into the next procedure cannot exceed 4H, requiring re-cleaning after the online time exceeds 4H, and ensuring that the cleaning frequency does not exceed 3 times;
G. powder spraying: placing fluorescent glue prepared by combining fluorescent powder and silica gel in a glue cavity of a high-precision powder sprayer, fixing a semi-finished product which is subjected to die bonding at a powder spraying fixing position by using a jig, and performing powder spraying treatment on the surface of the LED flip chip by using the high-precision powder sprayer to form a fluorescent layer, wherein the jig rotates at a constant speed to ensure the coverage uniformity of the fluorescent glue on the surface of the LED flip chip during powder spraying;
H. assembling a plastic sleeve: combining a copper sheet with an ABS plastic material through an injection mold to form a plastic casing with a built-in circuit structure, wherein a conductive contact of the copper sheet exposed on the inner wall of the plastic casing with the built-in circuit structure is butted with a positive electrode of the built-in circuit substrate, so that all the built-in circuit substrates are connected in parallel, and a high-temperature-resistant insulating layer lead is separately led out of the plastic casing with the built-in circuit structure to serve as a positive electrode;
I. glue pouring: quantitatively injecting the A/B silica gel which is prepared, mixed and vacuumized completely into a mold cavity through a high-precision dispenser, assembling a semi-finished product which is assembled by the plastic suite through the processes into the mold cavity, and placing the semi-finished product in a high-temperature oven for baking in a segmented mode, wherein the primary curing condition is 135 ℃/1.5H, the complete curing and baking condition is 150 ℃/4H, the semi-finished product which is assembled by the plastic suite is completely cured through baking, and the periphery of the semi-finished product which is assembled by the plastic suite is integrally molded with the silica gel to form an LED light source structure;
J. light splitting: and arranging corresponding BINs in a test system, wherein each BIN comprises voltage, brightness, wavelength, color rendering index and color tolerance set ranges, placing the formed LED light source structure in an LED tester containing an integrating sphere through a test fixture for testing, and simultaneously placing the formed LED light source structure and the BIN material together to ensure the consistency of photoelectric parameters of the formed LED light source structure and the BIN material.
After adopting the technical scheme, compared with the prior art, the invention has the following beneficial effects: the silver-plated copper column is used as the support, has good heat-conducting property, can timely and effectively dissipate heat generated by the LED flip chip, and ensures the luminous efficiency and the service life of the LED flip chip. According to the invention, the silica gel is integrally formed in the chip area at the periphery of the column body in a glue filling mode, so that the risk of oxidation, vulcanization and pollution of the internal function area and blue light leakage caused by falling of fluorescent powder is effectively reduced by protecting the function area. According to the invention, the plurality of built-in circuit substrates are respectively attached to the plurality of planes on the periphery of the column body, and each built-in circuit substrate is provided with at least one LED flip chip, so that the aim of all-dimensional light emission is realized, and different use requirements can be met.
Description of the drawings:
FIG. 1 is a structural view of a silver-plated copper pillar according to the present invention;
FIG. 2 is a schematic top view of a silver-plated copper pillar according to the present invention;
FIG. 3 is a schematic view of the built-in circuit board attached to each surface of the pillar by a high temperature reflow process according to the present invention;
FIG. 4 is a schematic view of an LED flip chip attached to a built-in circuit substrate by a low temperature reflow process in accordance with the present invention;
FIG. 5 is a schematic front view of the built-in circuit substrate according to the present invention;
FIG. 6 is a schematic view of the reverse side of the built-in circuit substrate of the present invention;
FIG. 7 is a schematic diagram of the LED flip chip of the present invention after surface spraying of phosphor;
FIG. 8 is a schematic view of the plastic housing with a built-in circuit structure according to the present invention;
FIG. 9 is a schematic view of a plastic case with a built-in circuit structure according to the present invention;
FIG. 10 is a schematic diagram of the circuit connection of the plastic housing with the built-in circuit structure according to the present invention;
FIG. 11 is a schematic structural view of an outer sealant injection mold of an LED light source structure according to the present invention;
FIG. 12 is an assembly diagram of a semi-finished product of an LED light source structure placed in a glue injection model according to the present invention;
FIG. 13 is a schematic diagram of the LED light source configuration of the present invention.
The specific implementation mode is as follows:
the invention is further illustrated below with reference to specific embodiments and the accompanying drawings.
As shown in fig. 1-13, a novel LED light source structure is provided, which includes: the LED lamp comprises silver-plated copper columns 1, a built-in circuit substrate 2, an LED flip chip 3, a fluorescent layer 4, silica gel 5 and a plastic casing 6 with a built-in circuit structure; a plurality of planes are arranged on the outer side of a cylinder 11 at the upper end of the silver-plated copper column 1, high-temperature tin paste is uniformly coated on each plane, the built-in circuit substrate 2 is attached to the plane of the cylinder 11, the high-temperature tin paste is solidified through a high-temperature reflow soldering process so as to attach the built-in circuit substrate 2 to the plane of the cylinder 11, a chip placing position on the built-in circuit substrate 2 is coated with first low-temperature tin paste and second low-temperature tin paste at the positive and negative ends respectively through a point low-temperature tin paste process, at least one LED flip chip 3 is placed at the chip placing position on the built-in circuit substrate 2, the positive and negative ends at the bottom of the LED flip chip 3 are respectively contacted with the first low-temperature tin paste and the second low-temperature tin paste, and the LED flip chip 3 is fixedly connected with; the surface of the LED flip chip 3 is provided with a fluorescent layer 4 through a process of powder spraying or fluorescent film pasting, the surface of the LED flip chip which is welded on the built-in circuit substrate is ensured to be uniformly excited by the powder spraying or fluorescent film pasting process, meanwhile, the type and the amount of the fluorescent powder can be adjusted according to requirements to form white light with different parameters (including parameters such as color temperature, color rendering index, color tolerance and the like), in addition, a jig is required to shield a positive electrode 20 of the built-in circuit substrate 2 to reserve a welding surface during the powder spraying or film pasting process, the built-in circuit structure plastic casing 6 is sleeved on the built-in circuit substrate 2 of each plane of the cylinder, and an internal circuit of the built-in circuit structure plastic casing 6 is connected with the positive electrode 20 of the built-in circuit substrate 2 in parallel; this built-in circuit structure plastic housing 6 draws forth high temperature resistant insulating layer wire 60 alone as the positive pole, silica gel 5 is fixed in the peripheral chip region of cylinder 11 through the mode of encapsulating an organic whole, and this silica gel 5 plays the protection and is in the effect, and in order to form the luminous LED light source of a multiaspect. According to the invention, the built-in circuit substrate 2 is adhered to the plane of the column body 11 through a high-temperature reflow soldering process, and the LED flip chip 3 is fixedly connected with the built-in circuit substrate 2 through a low-temperature reflow soldering process, so that the stability of the structure can be ensured, the quality of electric leakage, high voltage and serious light attenuation caused by the damage of the internal structure of the LED flip chip and the reliability risk of the product can be avoided, and the corresponding risk can be effectively reduced by adopting low-temperature solder paste to solder the LED flip chip through the low-temperature reflow soldering process, and the reliability and the quality consistency of the product can be ensured. The silver-plated copper column is used as the support, has good heat-conducting property, can timely and effectively dissipate heat generated by the LED flip chip, and ensures the luminous efficiency and the service life of the LED flip chip. According to the invention, the silica gel is integrally formed in the chip area at the periphery of the column body 11 in a glue filling mode, so that the risk of oxidation, vulcanization and pollution of the internal function area and blue light leakage caused by falling of fluorescent powder is effectively reduced by protecting the function area. According to the invention, the plurality of built-in circuit substrates 2 are respectively attached to the plurality of planes on the periphery of the column body 11, and each built-in circuit substrate 2 is provided with at least one LED flip chip 3, so that the aim of all-around light emission is achieved, and different use requirements can be met.
The built-in circuit substrate 2 is any one of an aluminum nitride ceramic substrate, an aluminum oxide ceramic substrate, a superconducting aluminum substrate or a copper substrate, wherein at least one negative electrode 21 is arranged on the upper portion of the built-in circuit substrate 2, at least one positive electrode 20 is arranged on the lower portion of the built-in circuit substrate 2, and a negative electrode welding surface 22 which is electrically connected with the negative electrode 21 and has electric and heat conduction effects is arranged on the back of the built-in circuit substrate 2. Meanwhile, the circuit design of the built-in circuit substrate can change the circuit according to the actual requirement so as to achieve the effects of series-parallel connection and polarity change of the LED flip chip.
The silver-plated copper column is made of T2 red copper material with good electric conductivity and thermal conductivity, and the thickness of the silver-plated layer on the surface of the silver-plated copper column is more than 40 u'.
The built-in circuit substrate adopt high temperature tin cream to paste in each plane of cylinder, and LED flip chip adopts low temperature tin cream to weld on built-in circuit substrate, wherein high temperature tin cream is tin antimony alloy, the fusing point is about 250 ℃, low temperature tin cream is the tin bismuth alloy, the fusing point is 138 ℃, this kind of secondary reflow soldering technology adopts high temperature and low temperature tin cream technology in proper order and does not influence the welding of primary base plate, the welding of LED flip chip adopts low temperature technology to avoid its inner structure damage to appear electric leakage, the risk of voltage height and light decay, effectively promote the quality of product.
The LED flip chip 3 is any one of an LED flip blue chip, an LED flip red chip and an LED flip green chip. Particularly, the novel LED light source structure is not limited to the fact that an LED flip blue light chip and fluorescent powder are evenly excited to form white light, and can be designed to be a single-color or multi-color mixed integrated light source structure formed by other types of flip chips such as an LED flip red light chip and an LED flip green light chip.
The plastic case 6 with the built-in circuit structure comprises an ABS plastic sleeve 61 and a copper sheet 62 which are integrally formed in an injection molding mode, the copper sheet 62 forms an internal circuit, and a conducting contact 621 of the copper sheet 62 is also arranged on the inner wall of the ABS plastic sleeve 61 and is butted with a positive electrode 20 of the built-in circuit substrate 2 so as to enable all the built-in circuit substrates 2 to be connected in parallel; the high temperature resistant insulation layer wire 60 is electrically connected with the copper sheet 62. The high temperature resistant insulating layer wire 60 is bonded with the column 11 by strong glue to form a whole, and the design is beneficial to circuit connection and product appearance.
The step of adding the outer-sealing silica gel in the chip area is to place a semi-finished product light emitting area which is subjected to powder spraying or fluorescent film pasting through injecting a certain amount of silica gel into the model 7 in the model and ensure that the chip area can be completely covered by glue, and then place the semi-finished product light emitting area in the oven for baking to ensure that the glue is completely cured, so that the silica gel can ensure that an inner functional area coating or a metal surface is prevented from being oxidized, vulcanized, fluorescent powder falls off and leaks blue light, pollutants, water vapor and other adhesive influences, and the oxidation resistance, vulcanization resistance and waterproof performance of the LED light source are effectively improved.
In conclusion, the silver-plated copper column is used as the support, so that the LED flip chip has good heat conducting performance, heat generated by the LED flip chip can be timely and effectively dissipated, and the luminous efficiency and the service life of the LED flip chip are ensured. According to the invention, the silica gel is integrally formed in the chip area at the periphery of the column body 11 in a glue filling mode, so that the risk of oxidation, vulcanization and pollution of the internal function area and blue light leakage caused by falling of fluorescent powder is effectively reduced by protecting the function area. According to the invention, the plurality of built-in circuit substrates 2 are respectively attached to the plurality of planes on the periphery of the column body 11, and each built-in circuit substrate 2 is provided with at least one LED flip chip 3, so that the aim of all-around light emission is achieved, and different use requirements can be met.
The invention discloses a manufacturing method of a novel LED light source structure, which comprises the following manufacturing steps:
A. brushing solder paste: printing high-temperature tin paste on a plurality of planes of a cylinder body at the upper end of the silver-plated copper cylinder, wherein the printing of the high-temperature tin paste needs a jig for controlling the thickness uniformity of the high-temperature tin paste;
B. pasting a substrate: pasting the back of the built-in circuit substrate on each plane coated with the tin paste silver-plated copper column, ensuring that the back of the built-in circuit substrate is completely contacted with the high-temperature tin paste and is arranged on the column body in order, and controlling the online time within 4H after the process is finished;
C. high-temperature reflow soldering: placing the silver-plated copper column pasted with the built-in circuit substrate into a jig, and solidifying high-temperature tin paste through a high-temperature reflow soldering process so as to enable the built-in circuit substrate to be completely soldered on the column body, wherein the reflow soldering maximum temperature is 280-310 ℃, and meanwhile, the soldering cavity condition of the soldered material is observed through X-ray, and the operation can be carried out until the cavity rate is less than 5%;
D. and (3) low-temperature solder paste dispensing: injecting low-temperature solder paste into a glue cavity of a high-precision glue dispenser, and precisely dispensing the low-temperature solder paste onto the positive electrode and the negative electrode of the built-in circuit substrate through the high-precision glue dispenser;
E. and (3) crystal solidification: placing the LED flip chip above the low-temperature solder paste by a high-precision die bonder in an adsorption manner, fixing the LED flip chip on the built-in circuit substrate by a low-temperature reflow soldering process, wherein the low-temperature reflow soldering temperature is less than or equal to 200 ℃, and simultaneously, the soldering cavity condition of the soldered material is observed by X-ray, and the voidage is ensured to be less than 3 percent,
F. cleaning: placing the semi-finished product after die bonding in a plasma cleaning machine for cleaning, ensuring that the surfaces of the cylinder, the built-in circuit substrate and the LED flip chip are in a clean state, ensuring that the online time of the cleaned material before flowing into the next procedure cannot exceed 4H, requiring re-cleaning after the online time exceeds 4H, and ensuring that the cleaning frequency does not exceed 3 times;
G. powder spraying: placing fluorescent glue prepared by combining fluorescent powder and silica gel in a glue cavity of a high-precision powder sprayer, fixing a semi-finished product which is subjected to die bonding at a powder spraying fixing position by using a jig, and performing powder spraying treatment on the surface of the LED flip chip by using the high-precision powder sprayer to form a fluorescent layer, wherein the jig rotates at a constant speed to ensure the coverage uniformity of the fluorescent glue on the surface of the LED flip chip during powder spraying;
H. assembling a plastic sleeve: combining a copper sheet with an ABS plastic material through an injection mold to form a plastic casing with a built-in circuit structure, wherein a conductive contact of the copper sheet exposed on the inner wall of the plastic casing with the built-in circuit structure is butted with a positive electrode of the built-in circuit substrate, so that all the built-in circuit substrates are connected in parallel, and a high-temperature-resistant insulating layer lead is separately led out of the plastic casing with the built-in circuit structure to serve as a positive electrode;
I. glue pouring: quantitatively injecting the A/B silica gel which is prepared, mixed and vacuumized completely into a mold cavity through a high-precision dispenser, assembling a semi-finished product which is assembled by the plastic suite through the processes into the mold cavity, and placing the semi-finished product in a high-temperature oven for baking in a segmented mode, wherein the primary curing condition is 135 ℃/1.5H, the complete curing and baking condition is 150 ℃/4H, the semi-finished product which is assembled by the plastic suite is completely cured through baking, and the periphery of the semi-finished product which is assembled by the plastic suite is integrally molded with the silica gel to form an LED light source structure;
J. light splitting: and arranging corresponding BINs in a test system, wherein each BIN comprises voltage, brightness, wavelength, color rendering index and color tolerance set ranges, placing the formed LED light source structure in an LED tester containing an integrating sphere through a test fixture for testing, and simultaneously placing the formed LED light source structure and the BIN material together to ensure the consistency of photoelectric parameters of the formed LED light source structure and the BIN material.
In conclusion, the silver-plated copper column is used as the support, so that the LED flip chip has good heat conducting performance, heat generated by the LED flip chip can be timely and effectively dissipated, and the luminous efficiency and the service life of the LED flip chip are ensured. According to the invention, the silica gel is integrally formed in the chip area at the periphery of the column body 11 in a glue filling mode, so that the risk of oxidation, vulcanization and pollution of the internal function area and blue light leakage caused by falling of fluorescent powder is effectively reduced by protecting the function area. According to the invention, the plurality of built-in circuit substrates 2 are respectively attached to the plurality of planes on the periphery of the column body 11, and each built-in circuit substrate 2 is provided with at least one LED flip chip 3, so that the aim of all-around light emission is achieved, and different use requirements can be met.
It should be understood that the above description is only exemplary of the present invention, and is not intended to limit the scope of the present invention, which is defined by the appended claims.
Claims (8)
1. A novel LED light source structure is characterized in that: it includes: the LED flip chip comprises silver-plated copper columns (1), a built-in circuit substrate (2), an LED flip chip (3), a fluorescent layer (4), silica gel (5) and a plastic casing (6) with a built-in circuit structure; a plurality of planes are arranged on the outer side of a cylinder body (11) at the upper end of the silver-plated copper cylinder (1), high-temperature tin paste is uniformly coated on each plane, the built-in circuit substrate (2) is attached to the plane of the cylinder body (11), the high-temperature solder paste is solidified through a high-temperature reflow soldering process so as to stick the built-in circuit substrate (2) on the plane of the column body (11), the chip placing position on the built-in circuit substrate (2) is coated with a first low-temperature solder paste and a second low-temperature solder paste at the two ends of the positive electrode and the negative electrode respectively through a point low-temperature solder paste process, at least one LED flip chip (3) is placed at the chip placing position on the built-in circuit substrate (2), the positive electrode and the negative electrode at the bottom of the LED flip chip (3) are respectively contacted with the first low-temperature solder paste and the second low-temperature solder paste, and the LED flip chip (3) is fixedly connected with the built-in circuit substrate (2) through a low-temperature reflow soldering process to form a conducting circuit; a fluorescent layer (4) is formed on the surface of the LED flip chip (3) through a process of powder spraying or fluorescent film pasting, a jig is used for shielding a positive electrode (20) of the built-in circuit substrate (2) so as to reserve a welding surface, the built-in circuit structure plastic casing (6) is sleeved on the built-in circuit substrate (2) on each plane of the cylinder, and an internal circuit of the built-in circuit structure plastic casing (6) is connected with the positive electrode (20) of the built-in circuit substrate (2) in parallel; a high-temperature-resistant insulating layer wire (60) is led out of the plastic casing (6) with the built-in circuit structure independently to serve as an anode, and the silica gel (5) is integrally fixed in a chip area on the periphery of the cylinder (11) in a glue pouring mode.
2. The novel LED light source structure of claim 1, wherein: the built-in circuit substrate (2) is any one of an aluminum nitride ceramic substrate, an aluminum oxide ceramic substrate, a superconducting aluminum substrate or a copper substrate, wherein at least one negative electrode (21) is arranged on the upper portion of the built-in circuit substrate (2), at least one positive electrode (20) is arranged on the lower portion of the built-in circuit substrate (2), and a negative electrode welding surface (22) which is electrically connected with the negative electrode (21) and has the effects of electric conduction and heat conduction is arranged on the back of the built-in circuit substrate (2).
3. The novel LED light source structure of claim 1, wherein: the silver-plated copper column is made of T2 red copper material with good electric conductivity and thermal conductivity, and the thickness of the silver-plated layer on the surface of the silver-plated copper column is more than 40 u'.
4. The novel LED light source structure of claim 1, wherein: the high-temperature solder paste is tin-antimony alloy, and the melting point is about 250 ℃; the first low-temperature tin paste and the second low-temperature tin paste are both tin-bismuth alloy, and the melting point is 138 ℃.
5. The novel LED light source structure of claim 1, wherein: the LED flip chip (3) is any one of an LED flip blue chip, an LED flip red chip and an LED flip green chip.
6. The novel LED light source structure according to any one of claims 1-5, wherein: the plastic case (6) with the built-in circuit structure comprises an ABS plastic sleeve (61) and a copper sheet (62) which are integrally formed in an injection molding mode, wherein a contact point of the copper sheet (62) is also arranged on the inner wall of the ABS plastic sleeve (61) and is butted with a positive electrode (20) of the built-in circuit substrate (2) so as to enable all the built-in circuit substrates (2) to be connected in parallel; the high-temperature-resistant insulating layer lead (60) is electrically connected with the copper sheet (62).
7. The novel LED light source structure of claim 6, wherein: the high-temperature-resistant insulating layer lead (60) is bonded with the cylinder (11) through super glue to form a whole.
8. A manufacturing method of a novel LED light source structure is characterized by comprising the following steps: the method comprises the following manufacturing steps:
A. brushing solder paste: printing high-temperature tin paste on a plurality of planes of a cylinder body at the upper end of the silver-plated copper cylinder, wherein the printing of the high-temperature tin paste needs a jig for controlling the thickness uniformity of the high-temperature tin paste;
B. pasting a substrate: pasting the back of the built-in circuit substrate on each plane coated with the tin paste silver-plated copper column, ensuring that the back of the built-in circuit substrate is completely contacted with the high-temperature tin paste and is arranged on the column body in order, and controlling the online time within 4H after the process is finished;
C. high-temperature reflow soldering: placing the silver-plated copper column pasted with the built-in circuit substrate into a jig, and solidifying high-temperature tin paste through a high-temperature reflow soldering process so as to enable the built-in circuit substrate to be completely soldered on the column body, wherein the reflow soldering maximum temperature is 280-310 ℃, and meanwhile, the soldering cavity condition of the soldered material is observed through X-ray, and the operation can be carried out until the cavity rate is less than 5%;
D. and (3) low-temperature solder paste dispensing: injecting low-temperature solder paste into a glue cavity of a high-precision glue dispenser, and precisely dispensing the low-temperature solder paste onto the positive electrode and the negative electrode of the built-in circuit substrate through the high-precision glue dispenser;
E. and (3) crystal solidification: placing the LED flip chip above the low-temperature solder paste by a high-precision die bonder in an adsorption manner, fixing the LED flip chip on the built-in circuit substrate by a low-temperature reflow soldering process, wherein the low-temperature reflow soldering temperature is less than or equal to 200 ℃, and simultaneously, the soldering cavity condition of the soldered material is observed by X-ray, and the voidage is ensured to be less than 3 percent,
F. cleaning: placing the semi-finished product after die bonding in a plasma cleaning machine for cleaning, ensuring that the surfaces of the cylinder, the built-in circuit substrate and the LED flip chip are in a clean state, ensuring that the online time of the cleaned material before flowing into the next procedure cannot exceed 4H, requiring re-cleaning after the online time exceeds 4H, and ensuring that the cleaning frequency does not exceed 3 times;
G. powder spraying: placing fluorescent glue prepared by combining fluorescent powder and silica gel in a glue cavity of a high-precision powder sprayer, fixing a semi-finished product which is subjected to die bonding at a powder spraying fixing position by using a jig, and performing powder spraying treatment on the surface of the LED flip chip by using the high-precision powder sprayer to form a fluorescent layer, wherein the jig rotates at a constant speed to ensure the coverage uniformity of the fluorescent glue on the surface of the LED flip chip during powder spraying;
H. assembling a plastic sleeve: combining a copper sheet with an ABS plastic material through an injection mold to form a plastic casing with a built-in circuit structure, wherein a conductive contact of the copper sheet exposed on the inner wall of the plastic casing with the built-in circuit structure is butted with a positive electrode of the built-in circuit substrate, so that all the built-in circuit substrates are connected in parallel, and a high-temperature-resistant insulating layer lead is separately led out of the plastic casing with the built-in circuit structure to serve as a positive electrode;
I. glue pouring: quantitatively injecting the A/B silica gel which is prepared, mixed and vacuumized completely into a mold cavity through a high-precision dispenser, assembling a semi-finished product which is assembled by the plastic suite through the processes into the mold cavity, and placing the semi-finished product in a high-temperature oven for baking in a segmented mode, wherein the primary curing condition is 135 ℃/1.5H, the complete curing and baking condition is 150 ℃/4H, the semi-finished product which is assembled by the plastic suite is completely cured through baking, and the periphery of the semi-finished product which is assembled by the plastic suite is integrally molded with the silica gel to form an LED light source structure;
J. light splitting: and arranging corresponding BINs in a test system, wherein each BIN comprises voltage, brightness, wavelength, color rendering index and color tolerance set ranges, placing the formed LED light source structure in an LED tester containing an integrating sphere through a test fixture for testing, and simultaneously placing the formed LED light source structure and the BIN material together to ensure the consistency of photoelectric parameters of the formed LED light source structure and the BIN material.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2022028022A1 (en) * | 2020-08-04 | 2022-02-10 | 东莞市瑞拓科技有限公司 | Novel led stereoscopic light source |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2022028022A1 (en) * | 2020-08-04 | 2022-02-10 | 东莞市瑞拓科技有限公司 | Novel led stereoscopic light source |
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