CN112993121A - Chip bonding method and micro light-emitting diode display - Google Patents
Chip bonding method and micro light-emitting diode display Download PDFInfo
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- CN112993121A CN112993121A CN202010863870.7A CN202010863870A CN112993121A CN 112993121 A CN112993121 A CN 112993121A CN 202010863870 A CN202010863870 A CN 202010863870A CN 112993121 A CN112993121 A CN 112993121A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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Abstract
The invention relates to a chip bonding method and a micro light-emitting diode display, wherein the chip bonding method comprises the following steps: arranging a rubber frame on the bonding pad, and enabling the electrode of the chip to penetrate through the rubber frame to be in contact with the bonding pad; heating to make the rubber frame melt and wrap the electrode; heating to fuse the electrode with the pad. Through set up gluey frame on the pad, the electrode of chip passes gluey frame and pad contact, can seal the connection face of electrode and pad after gluey frame melts, and electrode and pad contact surface melting welds the material and can not spill over the pad, can avoid causing the short circuit, and glue the frame and solidify the back and can make the bonding force that has the cementing power and provide between electrode and the pad, in addition the bonding force that the welding force of electrode and pad provided can improve the bonding force between electrode and the pad.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing processes, in particular to a chip bonding method and a micro light-emitting diode display.
Background
Micro-light emitting diode (Micro-led) display is a high performance display, and becomes a new generation of display device with the excellent performances of high brightness, low power consumption and long service life, and research and development in the Micro-led technical field are widely concerned by society.
In the Micro-led preparation process flow, the bulk transfer technology becomes the difficulty of Micro-led preparation, wherein the bonding technology of the Micro light emitting diode chip and the circuit backboard bonding pad (UBM) is the key point of the bulk transfer in the bulk transfer process. At present, the bonding of the electrode of the chip and the bonding pad of the circuit backboard is mainly carried out after the welding material on the surface of the bonding pad is melted. The current bonding method has problems: firstly, the welding material overflows the pad after melting and is connected the short circuit phenomenon that causes with adjacent pad during bonding, secondly, the bonding force of welding material connecting circuit backplate pad and chip electrode is not enough, causes the chip to drop etc. bad phenomenon easily.
Therefore, how to avoid short circuit caused by the solder material overflowing the pad and improve the bonding force between the pad of the circuit backboard and the electrode of the chip is a problem to be solved urgently.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, the present application aims to provide a chip bonding method and a micro light emitting diode display, which aims to solve the problem of how to avoid short circuit caused by solder overflowing from a pad and improve the bonding force between a circuit backplane pad and a chip electrode.
A chip bonding method, comprising:
arranging a rubber frame on the bonding pad, and enabling the electrode of the chip to penetrate through the rubber frame to be in contact with the bonding pad;
heating to make the rubber frame melt and wrap the electrode; and
heating to fuse the electrode with the pad.
Through set up gluey frame on the pad, the electrode of chip passes gluey frame and pad contact, can seal the connection face of electrode and pad after gluey frame melts, and electrode and pad contact surface melting welds the material and can not spill over the pad, can avoid causing the short circuit, and glue the frame and solidify the back and can make the bonding force that has the cementing power and provide between electrode and the pad, in addition the bonding force that the welding force of electrode and pad provided can improve the bonding force between electrode and the pad.
Optionally, a rubber frame is disposed on the pad, and an electrode of the chip passes through the rubber frame to contact the pad, including: openings are arranged at two opposite ends of the rubber frame to form a containing cavity, and the end part of one opening is connected with the bonding pad; and aligning the electrode with the bonding pad, and pressing the electrode into the rubber frame so that the electrode is accommodated in the accommodating cavity and is in contact with the bonding pad. The electrode and the bonding pad are aligned, and then the electrode is pressed into the rubber frame and is in contact with the bonding pad, so that the process is easy to realize, and the operation is simple.
Optionally, the chip is a light emitting diode chip, the chip includes a P electrode and an N electrode, the pad includes a first pad and a second pad, the glue frame includes a first glue frame and a second glue frame, and the method includes: arranging the first rubber frame on the first bonding pad, and arranging the second rubber frame on the second bonding pad; aligning the P electrode with the first bonding pad, and aligning the N electrode with the second bonding pad; and pressing the P electrode into the first rubber frame and pressing the N electrode into the second rubber frame, so that the P electrode and the N electrode are not short-circuited, and the bonding force between the P electrode and the corresponding bonding pad is increased.
Optionally, the number of the chips is multiple, and the P electrode and the N electrode of each chip are both accommodated in the corresponding accommodating cavity of the rubber frame. The P electrode and the N electrode of each chip are accommodated in the corresponding accommodating cavities of the rubber frame, so that short circuit among three chips in a pixel can be avoided, and the bonding force between the electrodes and bonding pads in the pixel is also improved. For a display including a large number of pixels, short circuits between pixels can be prevented, and bonding force between electrodes and pads of the respective pixels can be improved.
Optionally, the temperature for melting the rubber frame is a first temperature, and the temperature for welding the electrode and the bonding pad is a second temperature, where the first temperature is less than or equal to the second temperature. The melting point that sets up gluey frame is less than the melting point of welding the material, during the heating, reaches first temperature earlier and makes gluey frame melt, and the molten gluey frame parcel is around the electrode to seal the contact surface of electrode and pad, reach the second temperature again and make welding the material melt, thereby butt fusion electrode and pad, the molten welding material is surrounded by the molten gluey frame, can not spill over from the pad, avoids the short circuit. And after subsequent cooling, the electrode and the bonding pad are welded and fixed by the cooled and solidified welding material, and the cooled and solidified rubber frame wraps the periphery of the electrode and is connected with the electrode and the bonding pad, so that the bonding force of the electrode and the bonding pad is improved.
Optionally, the pad includes a welding material, the welding material is surrounded by the rubber frame, and the welding material is used for welding with the electrode. After the electrode and the bonding pad are welded, the connecting surface of the electrode and the bonding pad is enclosed by the melted rubber frame, so that the welding material melted on the contact surface of the electrode and the bonding pad can not overflow the bonding pad, and the short circuit can be avoided.
Optionally, the bonding pad is disposed on the circuit board, and the circuit board is heated by laser to melt the adhesive frame when the adhesive frame reaches the first temperature, and then the circuit board is continuously heated by the laser to melt the bonding pad and the electrode when the bonding pad reaches the second temperature. The laser heating mode is used, the temperature controllability is high, and the melting of the rubber frame and the welding material can be accurately controlled.
Optionally, the height of the rubber frame on the pad is a first height, the height of the electrode on the pad is a second height, and the first height is less than or equal to the second height. The frame that will glue sets up on the pad, and first height less than or equal to the second height, can ensure to glue the frame and can surround the material that welds of fused, avoids overflowing and lead to the short circuit, in addition, glues the frame and melts back parcel electrode to connect the pad, can promote the bonding power, when first height equals the second height, the promotion effect to the bonding power is best.
Optionally, set up gluey frame on the pad, include: prefabricating the rubber frame; adhering and fixing the glue frame and the bonding pad; or the rubber frame is fixed on the welding disc through a limiting structure.
Based on the same conception, the application also provides a micro light-emitting diode display, which comprises a circuit backboard, a bonding pad, a rubber frame and a micro light-emitting diode chip, wherein the chip comprises an electrode, the bonding pad is arranged on the circuit backboard, the electrode is welded with the bonding pad, and the rubber frame is wrapped around the electrode through a melting process. Through set up gluey frame on the pad, the electrode of chip passes gluey frame and pad contact, can seal the connection face of electrode and pad after gluey frame melts, and electrode and pad contact surface melting welds the material and can not spill over the pad, can avoid causing the short circuit, and glue the frame and solidify the back and can make the bonding force that has the cementing power and provide between electrode and the pad, in addition the bonding force that the welding force of electrode and pad provided can improve the bonding force between electrode and the pad.
Drawings
FIG. 1 is a flow chart of a chip bonding method according to an embodiment;
FIG. 2 is a schematic diagram illustrating a step of a die bonding method according to an embodiment;
FIG. 3 is a schematic diagram illustrating a step of a die bonding method according to an embodiment;
FIG. 4 is a schematic diagram illustrating a step of a die bonding method according to an embodiment;
FIG. 5 is a schematic diagram illustrating a step of a die bonding method according to an embodiment;
FIG. 6 is a schematic diagram illustrating a step of a die bonding method according to an embodiment;
FIG. 7 is a schematic diagram illustrating a step of a die bonding method according to an embodiment;
FIG. 8 is a schematic diagram illustrating a step of a die bonding method according to an embodiment;
fig. 9 is a schematic structural diagram of a micro light emitting diode according to an embodiment.
Description of reference numerals:
10-a circuit backplane;
20-pad, 21-first pad, 22-second pad;
30-a rubber frame, 31-a first rubber frame, 32-a second rubber frame, 311-a first cavity and 321-a second cavity;
40-chip, 41-epitaxy, 42-electrode, 421-P electrode, 422-N electrode;
50-an adhesive layer;
60-a transient substrate;
70-laser.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
At present, the bonding of the electrode of the chip and the bonding pad of the circuit backboard is mainly carried out after the welding material on the surface of the bonding pad is melted. The current bonding method has problems: firstly, the welding material overflows the pad after melting and is connected the short circuit phenomenon that causes with adjacent pad during bonding, secondly, the bonding force of welding material connecting circuit backplate pad and chip electrode is not enough, causes the chip to drop etc. bad phenomenon easily.
Therefore, how to avoid short circuit caused by the solder material overflowing the pad and improve the bonding force between the pad of the circuit backboard and the electrode of the chip is a problem to be solved urgently.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
Referring to fig. 1, an embodiment of the present application provides a chip bonding method, including S1-S3, which is described in detail below.
Referring to fig. 1 to 3, in the chip bonding method according to the embodiment of the present application, S1: a frame 30 is provided on the pad 20, and an electrode 42 of the chip 40 is brought into contact with the pad 20 through the frame 30.
Specifically, the chip 40 is a Micro-light emitting diode (Micro-led) chip, and includes an epitaxy 41 and an electrode 42 connected to the epitaxy 41, where the electrode 42 includes a P electrode 421 and an N electrode 422, the circuit backplane 10 is provided with a first pad 21 and a second pad 22, the P electrode 421 is connected to the first pad 21, and the N electrode 422 is connected to the second pad 22. It is understood that chip 40 may also be other types of light emitting diode chips.
The plastic frame 30 includes a first plastic frame 31 and a second plastic frame 32, the P electrode 421 passes through the first plastic frame 31, and the N electrode 422 passes through the second plastic frame 32.
A frame 30 is provided on the pad 20, including: the first glue frame 31 and the second glue frame 32 are prefabricated, the first glue frame 31 is transferred to the first bonding pad 21, and the second glue frame 32 is transferred to the second bonding pad 22. In order to fix the relative position of the frame 30 and the pad 20, a layer of glue may be coated on the pad 20 and/or the frame 30, and when the frame 30 is transferred onto the pad 20, the pad 20 and the frame 30 are initially connected and aligned by the coated glue. Alternatively, instead of applying glue, the glue frame 30 may be placed directly on the pad 20; alternatively, other limiting structures such as bosses, grooves, etc. may be used to primarily fix the adhesive frame 30 on the bonding pad 20. The first rubber frame 31 is disposed on the first pad 21, and the second rubber frame 32 is disposed on the second pad 22.
By passing the electrodes of the chip 40 through the rubber frame 30, a structure is formed in which the electrodes 42 of the chip 40 are surrounded by the rubber frame 30, that is: the periphery of the P electrode 421 is surrounded by the first rubber frame 31, and the periphery of the N electrode 422 is surrounded by the second rubber frame 32.
The electrodes 42, i.e., the P electrode 421 and the N electrode 422, are substantially rectangular in cross section; correspondingly, the cross section of the rubber frame 30, namely the first rubber frame 31 and the second rubber frame 32, is also approximately rectangular. It is understood that the present invention is not limited to the way the cross-sections of the P-electrode 421 and the N-electrode 422 are substantially rectangular, and the cross-sections of the P-electrode 421 and the N-electrode 422 may also be in the shape of a parallelogram, a circle, an ellipse, other polygons, etc., and are not enumerated.
The size of the P electrode 421 and the size of the N electrode 422 (i.e., the length and width of the rectangle of the cross section) are generally different, but may be set to the same size; correspondingly, the first and second rubber frames 31 and 32 are also generally different in size, but may be provided with the same size. The adhesive frame 30 is disposed on the bonding pad 20, and when the electrode 42 of the chip 40 passes through the adhesive frame 30, the adhesive frame 30 surrounds the electrode 42, and the inner wall of the adhesive frame 30 and the outer surface of the electrode 42 can be attached to each other or have a small spacing distance. The rubber frame 30 may be an integral structure formed integrally, or may be a split structure formed by combining a plurality of components. The rubber frame 30 is made of an insulating material.
The cross-sectional shape of the pad 20 may be substantially rectangular, although other shapes are possible. The size of the pad 20 should be slightly larger than the size of the electrode 42.
The electrode 42 of the chip 40 is contacted with the pad 20 through the adhesive frame 30, which includes: opposite ends of the rubber frame 30 are opened, and an end of one of the openings is connected to the pad 20. That is, the rubber frame 30 includes a cavity, the cavity is communicated with the outside through the openings at the two opposite ends, the electrode 42 is accommodated in the cavity, the opening at one end of the rubber frame 30 is used for enabling the electrode 42 to extend into the cavity, and the opening at the other end of the rubber frame 30 is used for enabling the electrode 42 to contact with the pad 20 from the cavity. The rubber frame 30 is formed into a ring-shaped structure in a shape like a Chinese character 'kou' in a plan view, and the thickness thereof (i.e., the thickness of any one of four side plates in the shape like the Chinese character 'kou') is not limited and can be flexibly selected as required.
Referring to fig. 1, 7 to 9, in the chip bonding method according to the embodiment of the present application, S2: heat is applied to melt the frame 30 around the electrode 42.
Specifically, the adhesive frame 30 is tightly wrapped on the electrode 42 after being melted, and due to the action of gravity, the partially melted adhesive frame 30 is softened and flows towards the pad 20 to be accumulated on the pad 20, so that the melted adhesive frame 30 seals the contact surface of the electrode 42 and the pad 20, and after the adhesive frame 30 is cooled and solidified, a bonding force provided by an adhesive force can be formed between the electrode 42 and the pad 20.
Referring to fig. 1, 7 to 9, in the chip bonding method according to the embodiment of the present application, S3: heat is applied to fuse the electrode 42 to the pad 20.
Specifically, the pad 20 includes a solder material, which is surrounded by the rubber frame 30, and is welded to the electrode 42. After the electrode 42 is welded with the pad 20, the connection surface between the electrode 42 and the pad 20 is enclosed and sealed by the melted plastic frame 30, so that the melted welding material on the contact surface between the electrode 42 and the pad 20 cannot overflow the pad 20, and short circuit can be avoided.
Therefore, according to the embodiment of the application, the rubber frame 30 is arranged on the pad 20, the electrode 42 of the chip 40 passes through the rubber frame 30 to be in contact with the pad 20, the connection surface of the electrode 42 and the pad 20 can be sealed after the rubber frame 30 is melted, the melted welding material on the contact surface of the electrode 42 and the pad 20 cannot overflow out of the pad 20, short circuit can be avoided, and after the rubber frame 30 is solidified, the bonding force provided by the welding force between the electrode 42 and the pad 20 can be provided, and in addition, the bonding force provided by the welding force between the electrode 42 and the pad 20 can be improved.
In one embodiment, referring to fig. 2 to 4, disposing the adhesive frame 30 on the bonding pad 20, and contacting the electrode 42 of the chip 40 with the bonding pad 20 through the adhesive frame 30 includes:
the electrode 42 is aligned with the pad 20, and the electrode 42 is pressed into the frame 30, so that the electrode 42 is accommodated in the cavity and contacts the pad 20.
Specifically, the cavities include a first cavity 311 and a second cavity 321, the first cavity 31 is surrounded by the first plastic frame 31, and the second cavity 321 is surrounded by the second plastic frame 32. The P-electrode 421 is aligned with the first pad 21 and pressed into the first rubber frame 31, so that the P-electrode 421 is accommodated in the first cavity 311. The N electrode 422 is aligned with the second pad 22 and pressed into the second rubber frame 32, so that the N electrode 422 is accommodated in the second cavity 321.
In this embodiment, the height of the frame 30 on the pad 20 is a first height, the height of the electrode 42 on the pad 20 is a second height, and the first height is smaller than or equal to the second height. In other words, when the electrode 42 is pressed into the frame 30 and accommodated in the cavity, the surface of the electrode 42 away from the epitaxy 41 contacts the pad 20, and four sides of the electrode 42 are surrounded by the frame 30. When the first height is equal to the second height, the four sides of the electrode 42 are all surrounded by the frame 30, so that one end of the frame 30 is connected to the pad 20, and the other end is connected to the epitaxy 41. When the first height is smaller than the second height, the four sides of the electrode 42 are partially surrounded by the adhesive frame 30, the rest of the four sides can be exposed, and the portion surrounded by the adhesive frame 30 is located at the side close to the pad 20, so that the adhesive frame 30 can surround and enclose the contact surface where the electrode 42 and the pad 20 are contacted. Therefore, the rubber frame 30 is arranged on the bonding pad 20, the first height is smaller than or equal to the second height, the rubber frame 30 can be ensured to surround the molten welding material, short circuit caused by overflow is avoided, in addition, the rubber frame 30 wraps the electrode 42 after being melted and is connected with the bonding pad 20, bonding force can be improved, and when the first height is equal to the second height, the effect of improving the bonding force is the best.
Pressing the electrode 42 into the frame 30 includes: the circuit backboard 10 is fixed, so that the position of the pad 20 on the circuit backboard 10 is fixed, and the position of the glue frame 30 on the pad 20 is fixed. And then, the chip 40 is moved to be aligned with the circuit backboard 10, so that the electrode 42 corresponds to the position of the bonding pad 20, and the electrode 42 is just aligned with the rubber frame 30. Pressure is then applied to the die 40 so that the electrodes 42 are pressed into the frame 30 and received in the cavities, and the pressure is removed after the electrodes 42 extend into the cavities and contact the pads 20.
In this embodiment, the electrode 42 is aligned with the pad 20, and then the electrode 42 is pressed into the frame 30 and contacts with the pad 20, which is easy to implement in process and simple to operate.
Further, the bonding method further comprises: the P electrode 421 is aligned with the first pad 21, and the N electrode 422 is aligned with the second pad 22. The P-electrode 421 is pressed into the first frame 31, and the N-electrode 422 is pressed into the second frame 32.
Specifically, since the electrode 42 includes the P electrode 421 and the N electrode 422, and the P electrode 421 and the N electrode 422 are both required to be melt-wrapped by the rubber frame 30, the P electrode 421 is pressed into the first rubber frame 31, and the N electrode 422 is pressed into the second rubber frame 32, so that the P electrode 421 is accommodated in the first accommodating cavity 311, the N electrode 422 is accommodated in the second accommodating cavity 321, the P electrode 421 contacts the first pad 21, and the N electrode 422 contacts the second pad 22, thereby achieving the purpose that the P electrode 421 and the N electrode 422 cannot be short-circuited, and the bonding force between the P electrode 421 and the N electrode 422 and the corresponding pad 20 is increased.
In one embodiment, referring to fig. 5 and 6, the number of the chips 40 is multiple, and the P electrode 421 and the N electrode 422 of each chip 40 are accommodated in the corresponding cavities of the rubber frame 30.
In particular, for the light emitting diode display, it is necessary to emit light of various colors so that the unit emitting light, i.e., the pixel, may be structured to emit multicolor light using a single chip 40, or, in combination with a plurality of chips 40 emitting monochromatic light, the plurality of monochromatic light is mixed to emit various lights. In the present embodiment, a single chip 40 is used to emit monochromatic light, and the combined light emission of a plurality of chips 40 is superimposed and mixed to form various light forms. Specifically, the chip 40 includes a red chip emitting red light, a green chip emitting green light, and a blue chip emitting blue light, and one unit emitting light, i.e., pixel, includes one red chip 40, one green chip 40, and one blue chip 40, and the light emitting diode display includes a large number of pixels.
For a unit emitting light, i.e., a pixel, including three chips 40, i.e., a red chip, a green chip, and a blue chip, each chip 40 includes a P electrode 421 and an N electrode 422. The P electrode 421 and the N electrode 422 of each chip 40 are both accommodated in the corresponding accommodating cavities of the rubber frame 30, so that short circuit between the three chips 40 in a pixel can be avoided, and the bonding force between the electrode 42 and the bonding pad 20 in the pixel is also improved. For a light emitting diode display including a large number of pixels, it is also possible to prevent a short circuit between the pixels and improve the bonding force between the electrode 42 and the pad 20 of each pixel.
In one embodiment, referring to fig. 6 to 8, the temperature for melting the frame 30 is a first temperature, and the temperature for fusing the electrode 42 and the pad 20 is a second temperature, where the first temperature is less than or equal to the second temperature.
In this embodiment, the effect that the first temperature is less than or equal to the second temperature can be achieved by selecting a suitable material for the rubber frame 30 and a suitable material for the welding material of the pad 20. For example, the material of the rubber frame 30 is hot melt adhesive such as low melting point EVA, and the melting point of the rubber material is between 150 ℃ and 180 ℃, i.e. the first temperature is 150 ℃ to 180 ℃; the solder material is indium (In), the melting point of the In is 180 ℃, namely the second temperature is 180 degrees.
In this embodiment, the melting point of the glue frame 30 is set to be smaller than the melting point of the welding material, and when heating is performed, the first temperature is reached to melt the glue frame 30, the melted glue frame 30 is wrapped around the electrode 42 and seals the contact surface of the electrode 42 and the pad 20, and then the second temperature is reached to melt the welding material, so that the electrode 42 and the pad 20 are welded, the melted welding material is surrounded by the melted glue frame 30, the overflow from the pad 20 is avoided, and the short circuit is avoided. And after subsequent cooling, the electrode 42 and the pad 20 are welded and fixed by the cooled and solidified welding material, and the cooled and solidified rubber frame 30 wraps the periphery of the electrode 42 and is connected with the electrode 42 and the pad 20, so that the bonding force of the electrode 42 and the pad 20 is improved.
In one embodiment, referring to fig. 7 and 8, the bonding pads 20 are disposed on the circuit board 10, the circuit board 10 is heated by the laser 70 to melt the adhesive frame 30 at a first temperature, and the circuit board 10 is continuously heated by the laser 70 to melt the bonding pads 20 at a second temperature to the electrodes 42.
The laser 70 heating mode is adopted, the temperature controllability is high, and the melting of the rubber frame 30 and the welding material can be accurately controlled.
Referring to fig. 5, when the plurality of chips 40 are butted to the pads 20 on the circuit backplane 10, the plurality of chips 40 may be disposed on the temporary substrate 60 stacked with the adhesive layer 50, the plurality of chips 40 may be fixed on the temporary substrate 60 by the adhesive layer 50, and the plurality of chips 40 may be butted to the pads 20 on the circuit backplane 10 by moving the temporary substrate 60.
Referring to fig. 6, when the transient substrate 60 is moved to connect the plurality of chips 40 and the plurality of pads 20 on the circuit backplane 10 in a one-to-one correspondence manner, the electrode 42 of each chip 40 is connected to the corresponding pad 20, and the electrode 42 of each chip 40 surrounds the rubber frame 30. That is, the P-electrode 421 of each chip 40 is connected to the first pad 21, and the P-electrode 421 is surrounded by the first glue frame 31, the N-electrode 422 of each chip 40 is connected to the second pad 22, and the N-electrode 422 is surrounded by the second glue frame 32.
Referring to fig. 7, the laser 70 irradiates the circuit board 10 to heat the circuit board 10, and reaches a first temperature to melt the adhesive frame 30, and continues to heat to a second temperature to melt the solder material of the bonding pad 20.
Referring to fig. 8, after the material to be soldered and the frame 30 are cooled and solidified, the temporary substrate 60 and the adhesive layer 50 are removed, and the bonding process between the chip 40 and the circuit board 10 is completed. Specifically, the transient substrate 60 may be removed by laser 70 peeling, mechanical peeling, or the like, and the adhesive layer 50 may be removed by chemical etching, plasma gas purging, or the like.
Referring to fig. 9, a structure of bonding a single chip 40 and the circuit backplane 10 is shown, in the finished product, a layer of rubber frame 30 is wrapped around the electrode 42 of the chip 40, and since the rubber frame 30 is insulated, it has no influence on the electrical performance, and therefore, the final display effect of the display is not affected.
Referring to fig. 1 to 9, based on the same concept of the above chip bonding method, the embodiment of the present application further provides a chip bonding system, and the chip bonding system is configured to perform the chip bonding method according to the embodiment of the present application.
Specifically, the chip bonding system may include a circuit backplane fixing assembly, a rubber frame moving assembly, a chip moving assembly, and the like. The circuit backplane fixing assembly is used for fixing the circuit backplane 10 such that the circuit backplane 10 and the pads 20 on the circuit backplane 10 are fixed. The rubber frame moving assembly is used for moving the rubber frame 30 to the bonding pad 20 of the circuit backboard 10, and can also be used for primarily fixing the rubber frame 30 and the bonding pad 20. The chip moving assembly is used for moving the chip 40 to a position corresponding to the pad 20 and pressing the electrode 42 of the chip 40 into the rubber frame 30, so that the electrode 42 is accommodated in the accommodating cavity of the rubber frame 30 and the electrode 42 is in contact with the pad 20.
According to the chip bonding system provided by the embodiment, the rubber frame 30 is arranged on the bonding pad 20, the electrode 42 of the chip 40 penetrates through the rubber frame 30 to be in contact with the bonding pad 20, the connection surface of the electrode 42 and the bonding pad 20 can be sealed after the rubber frame 30 is melted, the melted welding materials on the contact surface of the electrode 42 and the bonding pad 20 cannot overflow out of the bonding pad 20, short circuit can be avoided, and after the rubber frame 30 is solidified, the bonding force provided by the welding force between the electrode 42 and the bonding pad 20 can be provided, and in addition, the bonding force provided by the welding force between the electrode 42 and the bonding pad 20 can be improved.
Referring to fig. 9, based on the same concept of the chip bonding method and the chip bonding system, the embodiment of the present application further provides a micro light emitting diode display, which includes a circuit backplane 10, a bonding pad 20, a frame 30 and a micro light emitting diode chip, where the micro light emitting diode chip may be the aforementioned chip 40, the chip 40 includes an electrode 42, the bonding pad 20 is disposed on the circuit backplane 10, the electrode 42 is welded to the bonding pad 20, and the frame 30 is wrapped around the electrode 42 by a fusing process.
The structures of the circuit back plate 10, the bonding pads 20, the rubber frame 30 and the chip 40 may refer to the foregoing description, and are not repeated.
According to the micro light emitting diode provided by the embodiment, the rubber frame 30 is arranged on the pad 20, the electrode 42 of the chip 40 penetrates through the rubber frame 30 to be in contact with the pad 20, the connection surface of the electrode 42 and the pad 20 can be sealed after the rubber frame 30 is melted, the melted welding material on the contact surface of the electrode 42 and the pad 20 cannot overflow out of the pad 20, short circuit can be avoided, and after the rubber frame 30 is solidified, the bonding force provided by the welding force between the electrode 42 and the pad 20 can be provided, and in addition, the bonding force provided by the welding force between the electrode 42 and the pad 20 can be improved.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A method of die bonding, comprising:
arranging a rubber frame on the bonding pad, and enabling the electrode of the chip to penetrate through the rubber frame to be in contact with the bonding pad;
heating to make the rubber frame melt and wrap the electrode; and
heating to fuse the electrode with the pad.
2. The chip bonding method according to claim 1, wherein the disposing a frame on the bonding pad and contacting the electrode of the chip with the bonding pad through the frame comprises:
openings are arranged at two opposite ends of the rubber frame to form a containing cavity, and the end part of one opening is connected with the bonding pad;
and aligning the electrode with the bonding pad, and pressing the electrode into the rubber frame so that the electrode is accommodated in the accommodating cavity and is in contact with the bonding pad.
3. The chip bonding method of claim 2, wherein the chip is a light emitting diode chip, the chip includes a P electrode and an N electrode, the pads include a first pad and a second pad, the frame includes a first frame and a second frame, the method includes:
arranging the first rubber frame on the first bonding pad, and arranging the second rubber frame on the second bonding pad;
aligning the P electrode with the first bonding pad, and aligning the N electrode with the second bonding pad;
and pressing the P electrode into the first rubber frame, and pressing the N electrode into the second rubber frame.
4. The die bonding method according to claim 3, wherein the number of the dies is plural, and the P electrode and the N electrode of each die are accommodated in the corresponding accommodating cavity of the rubber frame.
5. The chip bonding method according to any one of claims 1 to 4, wherein a temperature at which the adhesive frame is heated to melt is a first temperature, and a temperature at which the electrode is heated to fuse with the pad is a second temperature, and the first temperature is equal to or lower than the second temperature.
6. The die bonding method of claim 5, wherein the bonding pad comprises a solder material, the solder material is surrounded by the glue frame, and the solder material is used for welding with the electrode.
7. The chip bonding method according to claim 5, wherein the bonding pads are disposed on a circuit board, the circuit board is heated by a laser to melt the adhesive frame when the adhesive frame reaches the first temperature, and the bonding pads are further heated by the laser to melt the bonding pads with the electrodes when the bonding pads reach the second temperature.
8. The chip bonding method according to claim 2, wherein the height of the adhesive frame on the bonding pad is a first height, the height of the electrode on the bonding pad is a second height, and the first height is less than or equal to the second height.
9. The chip bonding method of claim 1, wherein the disposing a glue frame on the pad comprises:
prefabricating the rubber frame;
adhering and fixing the glue frame and the bonding pad; or the like, or, alternatively,
and fixing the rubber frame on the bonding pad through a limiting structure.
10. The micro light-emitting diode display is characterized by comprising a circuit backboard, a bonding pad, a rubber frame and a micro light-emitting diode chip, wherein the chip comprises an electrode, the bonding pad is arranged on the circuit backboard, the electrode is welded with the bonding pad in a fusion mode, and the rubber frame wraps the periphery of the electrode through a fusion process.
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| CN202010863870.7A CN112993121A (en) | 2020-08-25 | 2020-08-25 | Chip bonding method and micro light-emitting diode display |
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| CN202010863870.7A CN112993121A (en) | 2020-08-25 | 2020-08-25 | Chip bonding method and micro light-emitting diode display |
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| WO2024020954A1 (en) * | 2022-07-28 | 2024-02-01 | 广东省科学院半导体研究所 | Substrate bonding method |
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Application publication date: 20210618 |