CN207109156U - A kind of silicon carbide crystal growing device - Google Patents
A kind of silicon carbide crystal growing device Download PDFInfo
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- CN207109156U CN207109156U CN201720786631.XU CN201720786631U CN207109156U CN 207109156 U CN207109156 U CN 207109156U CN 201720786631 U CN201720786631 U CN 201720786631U CN 207109156 U CN207109156 U CN 207109156U
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- insulation layer
- heat
- calandria
- crucible
- crystal growing
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Abstract
The utility model belongs to technical field of crystal growth, more particularly to a kind of silicon carbide crystal growing device, including crucible, crucible is externally provided with heat-insulation layer, heat-insulation layer includes upper heat-insulation layer, lower heat-insulation layer and side heat-insulation layer, and stepped and thickness from top to bottom increases successively on the outside of described side heat-insulation layer；It is zigzag reflecting surface on the inside of the heat-insulation layer of side；Calandria I is evenly distributed with crucible wall；Crucible bottom is provided with calandria II；Calandria I is connected with power controller, and calandria II is connected with lowering or hoisting gear.The utility model is simple in construction, easy to use, and the utility model can accurately control the gradient and stability of thermal field in crystal growing process, ensures crystal growth quality, and can also be preferably minimized thermal loss.
Description
Technical field
The utility model belongs to technical field of crystal growth, and in particular to a kind of silicon carbide crystal growing device.
Background technology
In crystal technique, the growth of crystal is grown in crystal oven, and growing method mainly has flame
Method, czochralski method, EFG technique, Bridgman-Stockbarger method, kyropoulos, directional solidification method etc., no matter which kind of method, to the gradient of thermal field and steady
Qualitative requirement is all very high.And existing crystal growing apparatus, temperature control generally use visually observe, temperature control is unstable,
Influence governor's mass of crystal.In addition, in crystal growing process, heat also loses also bigger.
The content of the invention
In view of the above-mentioned problems, the utility model proposes a kind of silicon carbide crystal growing device, can using the utility model
With the accurately gradient and stability of control thermal field, and thermal loss is preferably minimized in crystal growing process.
The utility model uses following technical scheme：A kind of silicon carbide crystal growing device, including crucible, crucible are externally provided with
Heat-insulation layer, heat-insulation layer include upper heat-insulation layer, lower heat-insulation layer and side heat-insulation layer, stepped and thickness on the outside of described side heat-insulation layer
From top to bottom increase successively；It is zigzag reflecting surface on the inside of the heat-insulation layer of side；Calandria I is evenly distributed with crucible wall；Crucible
Bottom is provided with calandria II；Calandria I is connected with power controller, and calandria II is connected with lowering or hoisting gear.
Stepped and thickness from top to bottom increases successively on the outside of described side heat-insulation layer, makes it have suitable longitudinal direction temperature
Gradient is spent, is easy to improve pulling rate and reduces the crystal pulling cycle.It is zigzag reflecting surface on the inside of the heat-insulation layer of side, can be by heater
The secondary reflection again of heat caused by I, the utilization rate of heat is improved, reduce heat loss.Calandria I is connected with power controller, can be with
Overpower controller is listened to realize the real-time regulation of temperature.The calandria II of crucible bottom can heat to crucible bottom, add
Hot body II is connected with lowering or hoisting gear, it is possible to achieve the distance of calandria II and crucible is adjusted, and then realizes the regulation of temperature.
Further, it is zigzag reflecting surface on the inside of upper heat-insulation layer and lower heat-insulation layer, realizes further filling to heat
Divide and utilize.
Preferably, zigzag reflecting surface described herein is High-Purity Molybdenum zigzag reflecting surface.
In summary, the utility model is simple in construction, easy to use, and the utility model can be smart in crystal growing process
The really gradient and stability of control thermal field, ensures crystal growth quality, and can also be preferably minimized thermal loss.
Brief description of the drawings
Fig. 1 is the utility model structure diagram；
In figure：1st, crucible, 2, upper heat-insulation layer, 3, lower heat-insulation layer, 4, side heat-insulation layer, 5, zigzag reflecting surface, 6, calandria
I, 7, calandria II, 8, power controller, 9, lowering or hoisting gear, 10, seed rod.
Embodiment
A kind of silicon carbide crystal growing device, including crucible 1, crucible 1 are externally provided with heat-insulation layer, and heat-insulation layer includes upper heat-insulation layer
2nd, lower heat-insulation layer 3 and side heat-insulation layer 4, the described stepped and thickness in the outside of side heat-insulation layer 4 from top to bottom increase successively；Side is protected
The warm inner side of layer 4 is zigzag reflecting surface 5；Calandria I6 is evenly distributed with the side wall of crucible 1；The bottom of crucible 1 is provided with calandria
II7；Calandria I6 is connected with power controller 8, and calandria II7 is connected with lowering or hoisting gear 9.
Upper heat-insulation layer 2 and the inner side of lower heat-insulation layer 3 are zigzag reflecting surface 5.
Described zigzag reflecting surface 5 is High-Purity Molybdenum zigzag reflecting surface.
Claims (3)
1. a kind of silicon carbide crystal growing device, including crucible (1), crucible (1) are externally provided with heat-insulation layer, it is characterised in that：Insulation
Layer includes upper heat-insulation layer (2), lower heat-insulation layer (3) and side heat-insulation layer (4), and described side heat-insulation layer (4) outside is stepped and thick
Degree from top to bottom increases successively；It is zigzag reflecting surface (5) on the inside of side heat-insulation layer (4)；It is evenly distributed with and adds in crucible (1) side wall
Hot body I (6)；Crucible (1) bottom is provided with calandria II (7)；Calandria I (6) is connected with power controller (8), calandria II (7)
It is connected with lowering or hoisting gear (9).
A kind of 2. silicon carbide crystal growing device according to claim 1, it is characterised in that：Upper heat-insulation layer (2) and lower guarantor
It is zigzag reflecting surface (5) on the inside of warm layer (3).
A kind of 3. silicon carbide crystal growing device according to claim 1, it is characterised in that：Described zigzag reflecting surface
(5) it is High-Purity Molybdenum zigzag reflecting surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720786631.XU CN207109156U (en) | 2017-06-30 | 2017-06-30 | A kind of silicon carbide crystal growing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720786631.XU CN207109156U (en) | 2017-06-30 | 2017-06-30 | A kind of silicon carbide crystal growing device |
Publications (1)
| Publication Number | Publication Date |
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| CN207109156U true CN207109156U (en) | 2018-03-16 |
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| CN201720786631.XU Active CN207109156U (en) | 2017-06-30 | 2017-06-30 | A kind of silicon carbide crystal growing device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109280964A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of thermal field structure growing single-crystal silicon carbide |
| CN109280976A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of large scale high-purity silicon carbide monocrystalline, single crystalline substrate and preparation method thereof |
| WO2020077847A1 (en) * | 2018-10-16 | 2020-04-23 | 山东天岳先进材料科技有限公司 | Large-size high-purity silicon carbide single crystal, substrate, preparation method therefor and preparation device thereof |
| CN114411258A (en) * | 2022-03-29 | 2022-04-29 | 中电化合物半导体有限公司 | Growth method and growth equipment of silicon carbide crystals |
| CN114574969A (en) * | 2022-05-06 | 2022-06-03 | 浙江大学杭州国际科创中心 | Device and method for growing high-quality silicon carbide crystals |
| CN114635191A (en) * | 2022-04-18 | 2022-06-17 | 吉林联科特种石墨材料有限公司 | Combined hard carbon fiber heat-insulating cylinder and preparation method and application thereof |
-
2017
- 2017-06-30 CN CN201720786631.XU patent/CN207109156U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109280964A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of thermal field structure growing single-crystal silicon carbide |
| CN109280976A (en) * | 2018-10-16 | 2019-01-29 | 山东天岳先进材料科技有限公司 | A kind of large scale high-purity silicon carbide monocrystalline, single crystalline substrate and preparation method thereof |
| WO2020077847A1 (en) * | 2018-10-16 | 2020-04-23 | 山东天岳先进材料科技有限公司 | Large-size high-purity silicon carbide single crystal, substrate, preparation method therefor and preparation device thereof |
| JP2021502942A (en) * | 2018-10-16 | 2021-02-04 | 山▲東▼天岳先▲進▼科技股▲フン▼有限公司 | Large size high purity silicon carbide single crystal, substrate and its manufacturing method and manufacturing equipment |
| CN109280976B (en) * | 2018-10-16 | 2021-11-26 | 山东天岳先进科技股份有限公司 | Large-size high-purity silicon carbide single crystal, single crystal substrate and preparation method thereof |
| CN114411258A (en) * | 2022-03-29 | 2022-04-29 | 中电化合物半导体有限公司 | Growth method and growth equipment of silicon carbide crystals |
| CN114411258B (en) * | 2022-03-29 | 2022-07-08 | 中电化合物半导体有限公司 | Growth method and growth equipment of silicon carbide crystals |
| CN114635191A (en) * | 2022-04-18 | 2022-06-17 | 吉林联科特种石墨材料有限公司 | Combined hard carbon fiber heat-insulating cylinder and preparation method and application thereof |
| CN114574969A (en) * | 2022-05-06 | 2022-06-03 | 浙江大学杭州国际科创中心 | Device and method for growing high-quality silicon carbide crystals |
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Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |
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| CP03 | "change of name, title or address" |