CN207109157U - A kind of adjustable Silicon carbide crystal growth furnace of thermal field - Google Patents
A kind of adjustable Silicon carbide crystal growth furnace of thermal field Download PDFInfo
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- CN207109157U CN207109157U CN201720786632.4U CN201720786632U CN207109157U CN 207109157 U CN207109157 U CN 207109157U CN 201720786632 U CN201720786632 U CN 201720786632U CN 207109157 U CN207109157 U CN 207109157U
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- calandria
- observation window
- heater
- crystal growth
- thermal field
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Abstract
The utility model belongs to technical field of crystal growth, more particularly to a kind of adjustable Silicon carbide crystal growth furnace of thermal field, including body of heater and upper bell and lower bell, crucible is provided with body of heater, seed shaft is provided with above crucible, upper bell is provided with observation window, and observation window is provided with cooling jacket, and cooling jacket is provided with gas feed and gas vent；The inwall of upper bell, lower bell and body of heater is equipped with reflecting layer；Upper calandria, side calandria and the lower calandria of head and the tail connection are provided with outside crucible, described upper calandria, side calandria and lower calandria are respectively connected with cylinder.The regulation of thermal field can be not only realized using the utility model, and solve thes problems, such as that observation window is easily blocked, extends the usage time of observation window.
Description
Technical field
The utility model belongs to technical field of crystal growth, and in particular to a kind of adjustable growing silicon carbice crystals of thermal field
Stove.
Background technology
In crystal technique, the growth of crystal is grown in crystal oven, and growing method mainly has flame
Method, czochralski method, EFG technique, Bridgman-Stockbarger method, kyropoulos, directional solidification method etc., no matter which kind of method, the requirement to thermal field is all very
Height, and volatile matter is had in crystal growing process and is evaporate on observation window chip, within 5-10h, observation window will be waved
Stimulating food blocks, and so as to not see the crystal growth condition in Chu's stove, and then can not ensure crystal growth quality in stove.
The content of the invention
In view of the above-mentioned problems, the utility model proposes a kind of adjustable Silicon carbide crystal growth furnace of thermal field, using this reality
The regulation of thermal field can be not only realized with new, and solve thes problems, such as that observation window is easily blocked, extends observation
The usage time of window.
The utility model uses following technical scheme：A kind of adjustable Silicon carbide crystal growth furnace of thermal field, including body of heater and
Upper bell and lower bell, body of heater is interior to be provided with crucible, is provided with seed shaft above crucible, upper bell is provided with observation window, observation window
Cooling jacket is provided with, cooling jacket is provided with gas feed and gas vent；The inwall of upper bell, lower bell and body of heater is equal
Provided with reflecting layer；Upper calandria, side calandria and lower calandria provided with head and the tail connection outside crucible, described upper calandria,
Side calandria and lower calandria are respectively connected with cylinder.
When specifically used, observation window is provided with cooling jacket, and cooling jacket is provided with gas feed and gas vent, cooling
Gas can realize cooling to the volatile matter in stove, avoid it from depositing on observation window.The upper of head and the tail connection is provided with outside crucible
Calandria, side calandria and lower calandria, described upper calandria, side calandria and lower calandria are respectively connected with cylinder, when need
When wanting temperature higher, upper calandria, side calandria and lower calandria head and the tail are connected, and crucible is centered around into a closed heating ring
In border so that calandria is concentrated and it is heated, and the reflecting layer of the inwall of upper bell, lower bell and body of heater can be by heat
Reflection, realizes making full use of for heat；, can be by adjusting vapour when needing temperature to need to reduce in later stage crystal growing process
Cylinder adjusts the distance between each calandria and crucible, and is also gradually disengaged between each calandria so that heat slowly dissipates
Go out, realize the slow steady decrease of temperature.
Described gas vent is located at furnace interior, and the gas of discharge can be taken away by the vacuum system of body of heater.
Further, the face of described seed shaft stickup seed crystal is provided with groove.By carbon binder or carbon containing organic
When thing is uniformly applied on the face for pasting seed crystal, it is ensured that only paste and carbon binder is posted on the face of seed crystal or carbon containing is had
Machine thing, and there is no carbon binder or carbon containing organic matter in groove.Seed crystal is pasted onto on the face for pasting seed crystal, is allowed to be bonded
Closely；Seed crystal support is sintered, by carbon binder or carbon containing organic matter sintering curing.Due to reeded presence, carbon
Gas in adhesive or carbon containing organic matter can along the unrestricted discharge of these circulation passages, make carbon binder or
The carbon containing organic matter solidification of person is uniform, it is therefore prevented that seed crystal comes off or causes crystal cleavage because stress is excessive, effective to improve
The qualification rate of seed crystal is pasted, is advantageous to seed crystal and preferably grows, ensure that production, reduce processing cost.Described
Groove II depth is 1-5mm, width 0.1-2mm.Described groove II is arranged in rice font or parallel arrangement.
Described observation window is provided with optical filter, and strong light during eye-observation can be avoided to be injured to caused by human eye.
In summary, the utility model is simple in construction, has advantages below：
(1) realize that the distance between calandria and crucible are adjusted by cylinder, and then realize the regulation of thermal field；
(2) solve the problems, such as that observation window is easily blocked by volatile substance, extend the usage time of observation window；
(3) when avoiding manually visually observing, injury of the strong light to human eye；
(4) qualification rate for pasting seed crystal is improved, ensure that the growth quality of later stage crystal.
Brief description of the drawings
Fig. 1 is structural representation of each calandria of the utility model with crucible when closest；
Fig. 2 is structural representation when each calandria of the utility model has certain distance with crucible distance；
In figure：1st, body of heater, 2, upper bell, 3, lower bell, 4, crucible, 5, seed shaft, 6, observation window, 7, cooling jacket, 8,
Gas feed, 9, gas vent, 10, reflecting layer, 11, upper calandria, 12, side calandria, 13, lower calandria, 14, cylinder, 15,
Seed crystal, 16, groove, 17, optical filter.
Embodiment
A kind of adjustable Silicon carbide crystal growth furnace of thermal field, including body of heater 1 and upper bell 2 and lower bell 3, in body of heater 1
Provided with crucible 4, the top of crucible 4 is provided with seed shaft 5, and upper bell 2 is provided with observation window 6, and observation window 6 is provided with cooling jacket 7, cold
But chuck 7 is provided with gas feed 8 and gas vent 9；The inwall of upper bell 2, lower bell 3 and body of heater 1 is equipped with reflecting layer
10；Upper calandria 11, side calandria 12 and lower calandria 13 of the outside of crucible 4 provided with head and the tail connection, described upper calandria 11,
Side calandria 12 and lower calandria 13 are respectively connected with cylinder 14.
Described gas vent 9 is located inside body of heater 1.
The face that described seed shaft 5 pastes seed crystal is provided with groove 16.
Described observation window 6 is provided with optical filter 17.
Claims (4)
1. a kind of adjustable Silicon carbide crystal growth furnace of thermal field, including body of heater (1) and upper bell (2) and lower bell (3), body of heater
(1) crucible (4) is provided with, seed shaft (5) is provided with above crucible (4), it is characterised in that：Upper bell (2) is provided with observation window
(6), observation window (6) is provided with cooling jacket (7), and cooling jacket (7) is provided with gas feed (8) and gas vent (9)；Upper stove
The inwall of lid (2), lower bell (3) and body of heater (1) is equipped with reflecting layer (10)；The upper of head and the tail connection is provided with outside crucible (4)
Calandria (11), side calandria (12) and lower calandria (13), described upper calandria (11), side calandria (12) and lower heating
Body (13) is respectively connected with cylinder (14).
A kind of 2. adjustable Silicon carbide crystal growth furnace of thermal field according to claim 1, it is characterised in that：Described gas
It is internal that outlet (9) is located at body of heater (1).
A kind of 3. adjustable Silicon carbide crystal growth furnace of thermal field according to claim 1, it is characterised in that：Described seed crystal
The face that axle (5) pastes seed crystal is provided with groove (16).
A kind of 4. adjustable Silicon carbide crystal growth furnace of thermal field according to claim 1, it is characterised in that：Described observation
Window (6) is provided with optical filter (17).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720786632.4U CN207109157U (en) | 2017-06-30 | 2017-06-30 | A kind of adjustable Silicon carbide crystal growth furnace of thermal field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720786632.4U CN207109157U (en) | 2017-06-30 | 2017-06-30 | A kind of adjustable Silicon carbide crystal growth furnace of thermal field |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207109157U true CN207109157U (en) | 2018-03-16 |
Family
ID=61575098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720786632.4U Active CN207109157U (en) | 2017-06-30 | 2017-06-30 | A kind of adjustable Silicon carbide crystal growth furnace of thermal field |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207109157U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113564721A (en) * | 2021-08-17 | 2021-10-29 | 眉山博雅新材料有限公司 | Observation window device of crystal growth furnace |
-
2017
- 2017-06-30 CN CN201720786632.4U patent/CN207109157U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113564721A (en) * | 2021-08-17 | 2021-10-29 | 眉山博雅新材料有限公司 | Observation window device of crystal growth furnace |
| CN113564721B (en) * | 2021-08-17 | 2022-06-07 | 眉山博雅新材料股份有限公司 | Observation window device of crystal growth furnace |
| WO2023020526A1 (en) * | 2021-08-17 | 2023-02-23 | 眉山博雅新材料股份有限公司 | Window apparatus for oven body |
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| CP03 | "change of name, title or address" |
Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 250100 Shandong city of Ji'nan province high tech Zone Xinyu Road on the west side of century wealth center AB block 1106-6-01 Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |
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| CP03 | "change of name, title or address" |