CN206244915U - A kind of silicon carbide monocrystal growth device with thermograde corrective action - Google Patents
A kind of silicon carbide monocrystal growth device with thermograde corrective action Download PDFInfo
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- CN206244915U CN206244915U CN201621345372.9U CN201621345372U CN206244915U CN 206244915 U CN206244915 U CN 206244915U CN 201621345372 U CN201621345372 U CN 201621345372U CN 206244915 U CN206244915 U CN 206244915U
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- crucible
- extra play
- air inlet
- hollow
- silicon carbide
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Abstract
The utility model is related to silicon carbide monocrystal growth manufacturing field of equipment, and in particular to a kind of silicon carbide monocrystal growth device with thermograde corrective action, including：Including：Lid, insulation quilt, sensing heater and hollow extra play on crucible, crucible, insulation quilt are made up of top, bottom and side insulation quilt, and centre bore is provided with the middle part of the insulation quilt of top；In side, the top of insulation quilt is at least additionally provided with 1 perforate at least provided with 1 perforate around centre bore, and hollow extra play is located on top insulation quilt and crucible between covering and is fixed on crucible and covers, and hollow extra play includes：At least one air inlet and gas outlet, air inlet are located at the sidepiece of hollow extra play and are passed through the perforate of side insulation quilt, and gas outlet is located at the top of hollow extra play and is passed through the perforate around centre bore.The device is controlled by setting up a hollow extra play by features such as gas type, gas flows, realizes the thermograde adjustment in crystal growing process.
Description
Technical field
The utility model is related to silicon carbide monocrystal growth manufacturing field of equipment, and in particular to a kind of with thermograde adjustment
The silicon carbide monocrystal growth device of effect.
Background technology
The common method that at present prepared by most of great diameter SiC crystal is physical vapor transport（Physical
Vapor Transport）.Sic powder is placed on the crucible bottom of closed graphite composition, lid fixes a seed on crucible
Crystalline substance, the diameter of seed crystal will determine the diameter of crystal.Powder is up to sublimation temperature point in the presence of induction coil, and distillation is produced
Si, Si2C and SiC2Molecule is transferred to seed crystal face in the presence of axial-temperature gradient from raw material surface, in seed crystal table
Face slowly crystallizes the growth for reaching crystal, and thermograde can be to rate of crystalline growth, growth stability in crystal growing process
Material impact is produced with stress distribution in crystal etc., generally the position by distance, the crucible of feed change and seed crystal in coil
Put, heat insulation layer structure reaches the purpose of the control radial and axial thermograde of growth.But the side of above-mentioned regulating and controlling temperature gradient
Method can influence the Temperature Distribution in graphite crucible inside raw material area simultaneously, the decomposition distillation of raw material and internal soundness are transported and plays suppression
Make and use, particularly with the growth of large size single crystal, radial symmetry gradient can further increase, and central temperature is low to cause central part
The speed of growth of position is very fast, and edge is relatively slow, and crystal growth interface convexity is larger, reduces crystal and can be used for the utilization cut into slices
Rate, can also increase the thermal stress of crystals in addition, cause crystal cleavage in cutting process, while leading to during growth of silicon carbide
Radial symmetry gradient is often adjusted by the relative position of regulation crucible and induction coil, the change of relative position can be to sic raw materials
Distillation and internal mass transport produce influence, cause crystal growth unstable, the change of relative position is also corresponding in addition
Radial symmetry gradient in crystal can be changed, the change of growth interface and crystals stress is caused.Therefore a kind of tool how is designed
The silicon carbide monocrystal growth device for having thermograde corrective action turns into the problem of this area urgent need to resolve.
Utility model content
The utility model is in view of the shortcomings of the prior art, it is proposed that a kind of carborundum list with thermograde corrective action
Crystals growth device, can be used for large size silicon-carbide crystal growth, and the utility model is additionally arranged and the hollow of inside is covered on crucible
Extra play, the hollow extra play has gas feed and outlet, excellent by carrying out to features such as gas type, gas flows
Choosing, realizes the adjustment to lid temperature on crucible, and then axially and radially thermograde present in control crystal growing process.
In order to solve the above technical problems, the utility model provides a kind of carborundum list with thermograde corrective action
Crystals growth device, including：Lid, insulation quilt, sensing heater and hollow extra play on crucible, crucible, wherein, covered on the crucible
Positioned at the top of the crucible, for closing the crucible and carrying silicon carbide seed；The insulation quilt is around the crucible four
Week is set, and it is made up of top, bottom and side insulation quilt, centre bore is provided with the middle part of the top insulation quilt, for maintaining
Thermograde in the crucible；The sensing heater includes induction coil, and it sets around the side insulation quilt, is used for
Make the heating of crucible periphery；According to embodiment of the present utility model, on the top of the side insulation quilt at least provided with 1 perforate,
Air inlet for being passed through the hollow extra play, is at least additionally provided with 1 perforate, for being passed through around the centre bore
The gas outlet of hollow extra play is stated, the hollow extra play is located on the top insulation quilt and crucible between covering and is fixed on institute
State and covered on crucible, the hollow extra play includes：At least one air inlet and at least one gas outlet, the air inlet are located at institute
The sidepiece for stating hollow extra play and the perforate for being passed through the side insulation quilt, the gas outlet are located at the upper of the hollow extra play
Portion and the perforate being passed through around the centre bore, for being passed through gaseous exchange heat exchange.
Inventor has found, described by setting up a hollow extra play by the device described in the utility model embodiment
Hollow extra play has gas feed and outlet, carries out the heat convection of crucible internal gas, reduces crucible top center heat
Scatter and disappear, crucible surrounding heat is effectively taken away by sidepiece air inlet, reduce the temperature difference of germ nucleus and surrounding, that is, reduce crystal
Radial symmetry gradient, makes the grain boundary more convexity for growing lower, improves crystal and can be used for the utilization rate cut into slices, and reduces
The thermal stress of crystals, prevents crystal cleavage in cutting process；Carried out by features such as gas type, gas flows simultaneously
It is preferred that, realize the adjustment to lid temperature on crucible, and then axially and radially temperature ladder present in control crystal growing process
Degree, the utility model is improved with relatively simple structure, realizes the regulation and control of axially and radially thermograde, improves crystal growth
Stability, reduce monocrystalline internal stress, and be easily achieved, cost it is controllable, with prominent scale application prospect, particularly
It is adapted to large size silicon-carbide crystal growth.
According to embodiment of the present utility model, the material covered on the crucible is graphite.
According to embodiment of the present utility model, the hollow extra play is cylinder, and its hollow height is on the crucible
0.1-2 times of lid height and be 0.2-0.5 times of lid diameter on the crucible, cover identical on its diameter and the crucible and be institute
State silicon carbide seed diameter 1.5-2 times, a diameter of 2 cun, 3 cun, 4 cun or 6 cun of the silicon carbide seed, its material is metal
Tantalum, its heat conductivility is lower than graphite under the same conditions, the heat loss for reducing the central hole, in the increase seed crystal
Heart temperature, adjusts thermograde.
According to embodiment of the present utility model, perforate and the distance of centre bore around the centre bore are described hollow attached
Plus 0.1-0.5 times of layer diameter.
According to embodiment of the present utility model, the number of the air inlet and gas outlet with the corresponding aperture is equal,
The air inlet is horizontally disposed, when the air inlet is 2, its in the hollow extra play sidepiece symmetric arrays, it is described enter
Into the arrangement of hexagonal angle degree when gas port is 3, air inlet angle arrangement in 90 ° when being 4；The gas outlet is to set vertically
Put, when the gas outlet is 2, its in the hollow extra play top symmetric arrays, when the air inlet is 3 its with it is described
The angle that the hollow extra play line of centres is formed is arranged into hexagonal angle degree, and it is hollow additional with described when the air inlet is 4
The angle angle arrangement in 90 ° that the layer line of centres is formed, by that analogy, the number and arrangement angle of the air inlet and gas outlet
Product is 360 °.
According to embodiment of the present utility model, the hollow extra play bottom is additionally provided with the silk connect with the crucible top cap
Button.
According to embodiment of the present utility model, gas flow adjuster, it is connected with the air inlet, described for adjusting
Gas flow, further adjusts the thermograde of the seeded growth, and the gas is hydrogen, helium or argon gas.
At least following beneficial effect of the utility model：
1）By setting hollow extra play, the heat convection of crucible internal gas is carried out, reduce crucible top center heat
Scatter and disappear, crucible surrounding heat is effectively taken away by sidepiece air inlet, reduce the temperature difference of germ nucleus and surrounding, that is, reduce crystal
Radial symmetry gradient, makes the grain boundary more convexity for growing lower, improves crystal and can be used for the utilization rate cut into slices, and reduces
The thermal stress of crystals, prevents crystal cleavage in cutting process；
2）Longitudinal temperature gradient in crucible is effectively adjusted by adjusting gas type and gas flow, inside enhancing crucible
Gaseous component mass transport, improves crystal growth stability, will not produce caused by the position adjustment of crucible and induction coil
The change of sic raw materials distillation；
3）The utility model is improved with relatively simple structure, realizes the regulation and control of axially and radially thermograde, is improved
The stability of crystal growth, reduce monocrystalline internal stress, and be easily achieved, cost it is controllable, before prominent scale application
Scape, is particularly adapted to large size silicon-carbide crystal growth.
Brief description of the drawings
Fig. 1 is the structure sectional view of crystal growing apparatus described in the utility model.
Structure sectional view when Fig. 2 is hollow extra play air inlet described in the utility model and gas outlet is 2.
Wherein, crucible 1, lid 2 on crucible, top insulation quilt 3, centre bore 301, perforate 302 around centre bore, side insulation
Felt 4, side insulation quilt perforate 401, induction coil 5, carborundum crystals 6, sic raw material 7, hollow extra play 8, air inlet
801, gas outlet 802.
Specific embodiment
In order that those skilled in the art more fully understand the technical solution of the utility model, with reference to specific embodiment
The utility model is described in further detail.The embodiments described below is exemplary, is only used for explaining that this practicality is new
Type, and it is not intended that to limitation of the present utility model.Unreceipted particular technique or condition in embodiment, according in the art
Document described by technology or condition or carried out according to product description.
The utility model provides a kind of silicon carbide monocrystal growth device with thermograde corrective action, and Fig. 1 is this
The structure sectional view of crystal growing apparatus described in utility model, shown in reference picture 1, according to embodiment of the present utility model, this reality
Included with the new crucible：Lid 2, insulation quilt, sensing heater and hollow extra play 8 on crucible 1, crucible, wherein, the earthenware
Lid positioned at the top of the crucible, for closing the crucible, place under being covered on the crucible by the silicon carbide seed on crucible
Surface, grows carborundum crystals 6, and the portion of lid is additionally provided with screw thread on the crucible, the screw thread phase with the hollow extra play bottom
Even, the hollow extra play is fixed, according to some embodiments of the present utility model, is covered on crucible described in the utility model
Specific material it is unrestricted, as long as the heat conductivility of its material is stronger than the hollow extra play, the utility model is preferred
It is graphite, compared with being covered on crucible, the capacity of heat transmission of extra play is low, reduces at insulation quilt upper portion central hole for hollow extra play
Heat loss, increases seed crystal central temperature, simultaneously because gas is flowed into from sidepiece in hollow extra play, middle part outflow is covered on crucible
The heat that sidepiece is taken away compared with center is more, reduce further the temperature difference at seed crystal edges and center, that is, reduce seed
Brilliant axially and radially thermograde, especially during growing large-size single-crystal silicon carbide, side induction heating mode can be made
Into bigger axially and radially thermograde, the problem can effectively be overcome using this programme.
According to embodiment of the present utility model, shown in reference picture 1, the insulation quilt is set around the crucible surrounding, its
Be made up of top insulation quilt 3, bottom insulation quilt and side insulation quilt 4, for maintaining the thermograde in the crucible, it is described on
Centre bore 301 is provided with the middle part of portion's insulation quilt, 1 perforate 302, the centre bore are at least additionally provided with around the centre bore
The perforate of surrounding and 0.1-0.5 times that the distance of centre bore is the hollow extra play diameter, it is described hollow additional for being passed through
The gas outlet 802 of layer, the number of perforate is equal with the gas outlet around the centre bore, on the top of the side insulation quilt
At least provided with 1 perforate 401, the air inlet 801 for being passed through the hollow extra play, the number of the side insulation quilt perforate
Equal with the air inlet, the sensing heater includes induction coil 5, and it is set around the side insulation quilt, the sense
Answer coil makes the heating of crucible periphery by way of electromagnetic induction.
According to embodiment of the present utility model, Fig. 2 is that hollow extra play air inlet described in the utility model and gas outlet are equal
For 2 when structure sectional view, it is shown referring to Figures 1 and 2, according to embodiment of the present utility model, the hollow extra play 8
In on the top insulation quilt and crucible cover between and be fixed on the crucible cover, the hollow extra play bottom be additionally provided with
The screw thread that the crucible top cap connects, the hollow extra play includes：Air inlet 801 and gas outlet 802, the air inlet are water
It is flat to set, positioned at the hollow extra play sidepiece and be passed through the perforate of the side insulation quilt, the gas outlet to set vertically
Put, positioned at the top of the hollow extra play and the perforate that is passed through around the centre bore, for being passed through gaseous exchange heat exchange, root
According to specific embodiment of the utility model, the specific number of air inlet described in the utility model and gas outlet is unrestricted, as long as
The number of the air inlet and gas outlet is 360 ° with arrangement angle product, as shown in Fig. 2 working as the air inlet and gas outlet
When being 2, in hollow extra play sidepiece symmetric arrays in the horizontal direction, gas outlet is in the hollow extra play for air inlet
Top vertically symmetric arrays, when the air inlet is 3 into the arrangement of hexagonal angle degree, when the air inlet is 4 into
90 ° of angle arrangements；The angle that it is formed with the line of centres when the air inlet is 3 is arranged into hexagonal angle degree, the air inlet
The angle angle arrangement in 90 ° that itself and the line of centres are formed when mouth is 4, by that analogy, in crystal growing process, is not changing
In the case of crucible and induction coil position, that is, in the case of keeping sic raw material distillation and mass transport unaffected, lead to
Crossing the flow of adjustment gas can adjust the temperature covered on crucible, that is, adjust the axially and radially thermograde in crucible.
According to some embodiments of the present utility model, device described in the utility model can also be adjusted including gas flow
Device, it is connected with the air inlet, for adjusting the gas flow, further adjusts the thermograde of the seeded growth,
The gas can be hydrogen, helium or argon gas, in crystal growing process, not change the situation of crucible and induction coil position
Under, sic raw material 7 is located at the crucible bottom, in the case of keeping sic raw material distillation and mass transport unaffected,
The temperature covered on crucible can also be adjusted by the type for adjusting gas, the thermal conductivity of hydrogen is more than argon gas, uniform pressure condition
Under, being passed through hydrogen can effectively reduce lid temperature on crucible, improve longitudinal temperature gradient, under same gas type condition, increase
Gas flow, can strengthen the heat convection ability of gas and lid on crucible, reduce lid temperature on crucible, it is also possible to improve longitudinal direction
Thermograde, larger longitudinal temperature gradient is conducive to the mass transport of gaseous material in crucible, lifts crystal growth stability.
According to embodiment of the present utility model, the hollow extra play 8 is cylinder, and its hollow height is on the crucible
0.1-2 times of lid height and be 0.2-0.5 times of lid diameter on the crucible, cover identical on its diameter and the crucible and be institute
State silicon carbide seed diameter 1.5-2 times, a diameter of 2 cun, 3 cun, 4 cun or 6 cun of the silicon carbide seed, its specific material is not
It is restricted, as long as the heat conductivility of material on the crucible than covering low, the utility model is preferably metal tantalum, in identical bar
Its heat conductivility on the crucible of graphite material than covering low under part, therefore the capacity of heat transmission of the hollow extra play is lower, reduces
Heat loss at insulation quilt upper portion central hole, increased seed crystal central temperature, simultaneously because gas is from sidepiece in hollow extra play
Middle part outflow is flowed into, the heat that lid sidepiece is taken away compared with center on crucible is more, reduce further seed crystal edges and center
Temperature difference, thermograde is adjusted.
Inventor has found, described by setting up a hollow extra play by the device described in the utility model embodiment
Hollow extra play has gas feed and outlet, carries out the heat convection of crucible internal gas, reduces crucible top center heat
Scatter and disappear, crucible surrounding heat is effectively taken away by sidepiece air inlet, reduce the temperature difference of germ nucleus and surrounding, that is, reduce crystal
Radial symmetry gradient, makes the grain boundary more convexity for growing lower, improves crystal and can be used for the utilization rate cut into slices, and reduces
The thermal stress of crystals, prevents crystal cleavage in cutting process；Carried out by features such as gas type, gas flows simultaneously
It is preferred that, realize the adjustment to lid temperature on crucible, and then axially and radially temperature ladder present in control crystal growing process
Degree, the utility model is improved with relatively simple structure, realizes the regulation and control of axially and radially thermograde, improves crystal growth
Stability, reduce monocrystalline internal stress, and be easily achieved, cost it is controllable, with prominent scale application prospect, particularly
It is adapted to large size silicon-carbide crystal growth.
In description of the present utility model, it is to be understood that term " on ", D score, " surrounding " and " side " etc. indicate
Orientation or position relationship be based on orientation shown in the drawings or position relationship, be for only for ease of description the utility model and letter
Change description, rather than indicate imply signified device or element must have specific orientation, with specific azimuth configuration and
Operation, therefore it is not intended that to limitation of the present utility model.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means to combine specific features, structure, material or spy that the embodiment or example are described
Point is contained at least one embodiment of the present utility model or example.In this manual, to the schematic table of above-mentioned term
Stating need not be directed to identical embodiment or example.And, the specific features of description, structure, material or feature can be
Combined in an appropriate manner in any one or more embodiments or example.Additionally, in the case of not conflicting, this area
Technical staff can be carried out the feature of the different embodiments or example described in this specification and different embodiments or example
With reference to and combination.
Particular embodiments described above, has been carried out further to the utility model content, technical scheme and beneficial effect
Describe in detail, should be understood that and the foregoing is only specific embodiment of the utility model, be not limited to this reality
With new, all within spirit of the present utility model and principle, any modification, equivalent substitution and improvements done etc. all should be included
Within protection domain of the present utility model.
Claims (7)
1. a kind of silicon carbide monocrystal growth device with thermograde corrective action, including：Lid on crucible, crucible, insulation quilt,
Sensing heater and hollow extra play, wherein, on the crucible lid positioned at the crucible top, for close the crucible and
Carry silicon carbide seed；The insulation quilt is set around the crucible surrounding, and it is made up of top, bottom and side insulation quilt,
Centre bore is provided with the middle part of the top insulation quilt, for maintaining the thermograde in the crucible；The sensing heater bag
Induction coil is included, it is set around the side insulation quilt, for making the heating of crucible periphery；Characterized in that,
On the top of the side insulation quilt at least provided with 1 perforate, the air inlet for being passed through the hollow extra play, in institute
State and be at least additionally provided with around centre bore 1 perforate, the gas outlet for being passed through the hollow extra play, the hollow extra play
Between being covered on the top insulation quilt and crucible and it is fixed on the crucible and covers, the hollow extra play includes：At least
One air inlet and at least one gas outlet, the air inlet are located at the sidepiece of the hollow extra play and are passed through the side and protects
The perforate of warm felt, the perforate that the gas outlet is located at the top of the hollow extra play and is passed through around the centre bore, is used for
It is passed through gaseous exchange heat exchange.
2. silicon carbide monocrystal growth device according to claim 1, it is characterised in that the material covered on the crucible is stone
Ink.
3. the silicon carbide monocrystal growth device according to any one of claim 1-2, it is characterised in that described hollow additional
Layer is cylinder, and its hollow height is 0.1-2 times of lid height on the crucible and is the 0.2-0.5 of lid diameter on the crucible
Times, cover identical on its diameter and the crucible and be 1.5-2 times of the silicon carbide seed diameter, the silicon carbide seed it is straight
Footpath is 2 cun, 3 cun, 4 cun or 6 cun, and its material is metal tantalum, and its heat conductivility is lower than graphite under the same conditions, for reducing
The heat loss of central hole is stated, increases the seed crystal central temperature, adjust thermograde.
4. silicon carbide monocrystal growth device according to claim 1, it is characterised in that perforate around the centre bore with
The distance of centre bore is 0.1-0.5 times of the hollow extra play diameter.
5. the silicon carbide monocrystal growth device according to claim 1 or 4, it is characterised in that the air inlet and gas outlet
Number with the corresponding aperture is equal, and the air inlet is horizontally disposed, and when the air inlet is 2, it is in the sky
Heart extra play sidepiece symmetric arrays, into the arrangement of hexagonal angle degree when the air inlet is 3, when the air inlet is 4 at an angle of 90
Degree arrangement；The gas outlet to be vertically arranged, when the gas outlet is 2, its in the hollow extra play top symmetric arrays,
Its angle formed with the hollow extra play line of centres is arranged into hexagonal angle degree when the air inlet is 3, the air inlet
The angle angle arrangement in 90 ° that itself and the hollow extra play line of centres are formed when mouth is 4, by that analogy, the air inlet
The number of mouth and gas outlet is 360 ° with arrangement angle product.
6. silicon carbide monocrystal growth device according to claim 1, it is characterised in that the hollow extra play bottom also sets
There is the screw thread connect with the crucible top cap.
7. silicon carbide monocrystal growth device according to claim 1, it is characterised in that also include：Gas flow adjuster,
It is connected with the air inlet, for adjusting the gas flow, further adjusts the thermograde of the seeded growth, described
Gas is hydrogen, helium or argon gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621345372.9U CN206244915U (en) | 2016-12-09 | 2016-12-09 | A kind of silicon carbide monocrystal growth device with thermograde corrective action |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621345372.9U CN206244915U (en) | 2016-12-09 | 2016-12-09 | A kind of silicon carbide monocrystal growth device with thermograde corrective action |
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| CN206244915U true CN206244915U (en) | 2017-06-13 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110523958A (en) * | 2019-09-10 | 2019-12-03 | 浙江大学 | The crucible device for being suitble to hypergravity directional solidification to use |
| CN112080797A (en) * | 2020-10-16 | 2020-12-15 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Combined type heat-preservation felt disc and heat-preservation felt disc structural member |
| CN112609238A (en) * | 2020-11-26 | 2021-04-06 | 山东天岳先进科技股份有限公司 | Crucible, device and application for silicon carbide single crystal growth |
| CN113005511A (en) * | 2021-02-23 | 2021-06-22 | 山东天岳先进科技股份有限公司 | Method and device for growing high-quality silicon carbide crystals |
| CN115558986A (en) * | 2022-11-14 | 2023-01-03 | 浙江晶越半导体有限公司 | Crucible for improving growth temperature uniformity of large-size silicon carbide seed crystal |
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2016
- 2016-12-09 CN CN201621345372.9U patent/CN206244915U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110523958A (en) * | 2019-09-10 | 2019-12-03 | 浙江大学 | The crucible device for being suitble to hypergravity directional solidification to use |
| CN110523958B (en) * | 2019-09-10 | 2024-02-27 | 浙江大学 | Crucible device suitable for supergravity directional solidification |
| CN112080797A (en) * | 2020-10-16 | 2020-12-15 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Combined type heat-preservation felt disc and heat-preservation felt disc structural member |
| CN112609238A (en) * | 2020-11-26 | 2021-04-06 | 山东天岳先进科技股份有限公司 | Crucible, device and application for silicon carbide single crystal growth |
| CN113005511A (en) * | 2021-02-23 | 2021-06-22 | 山东天岳先进科技股份有限公司 | Method and device for growing high-quality silicon carbide crystals |
| CN115558986A (en) * | 2022-11-14 | 2023-01-03 | 浙江晶越半导体有限公司 | Crucible for improving growth temperature uniformity of large-size silicon carbide seed crystal |
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Address after: 071066 No. 6001, North Third Ring Road, Baoding City, Hebei Province Patentee after: Hebei Tongguang Semiconductor Co.,Ltd. Address before: 071051 4th floor, block B, building 6, University Science Park, 5699 North 2nd Ring Road, Baoding City, Hebei Province Patentee before: HEBEI TONGGUANG CRYSTAL Co.,Ltd. |