CN205722840U - A kind of flexible copper grid base transparent conducting film - Google Patents

A kind of flexible copper grid base transparent conducting film Download PDF

Info

Publication number
CN205722840U
CN205722840U CN201620497516.6U CN201620497516U CN205722840U CN 205722840 U CN205722840 U CN 205722840U CN 201620497516 U CN201620497516 U CN 201620497516U CN 205722840 U CN205722840 U CN 205722840U
Authority
CN
China
Prior art keywords
layer
film
copper
flexible
transparent conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201620497516.6U
Other languages
Chinese (zh)
Inventor
刘宏燕
颜悦
望咏林
伍建华
张官理
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BEIJING INSTITUTE OF AERONAUTICAL MATERIALS CHINA AVIATION INDUSTRY GROUP Corp
Original Assignee
BEIJING INSTITUTE OF AERONAUTICAL MATERIALS CHINA AVIATION INDUSTRY GROUP Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BEIJING INSTITUTE OF AERONAUTICAL MATERIALS CHINA AVIATION INDUSTRY GROUP Corp filed Critical BEIJING INSTITUTE OF AERONAUTICAL MATERIALS CHINA AVIATION INDUSTRY GROUP Corp
Priority to CN201620497516.6U priority Critical patent/CN205722840U/en
Application granted granted Critical
Publication of CN205722840U publication Critical patent/CN205722840U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Laminated Bodies (AREA)

Abstract

This utility model relates to field of optical films, relates to a kind of flexible copper grid base transparent conducting film.Conductive film comprises: flexible transparent film substrate;One anti-reflection layer;And a copper mesh grid conductive layer;And described anti-reflection layer is disposed between described flexible transparent film substrate and copper mesh grid conductive layer.Described anti-reflection layer is made up of at least one of which low refractive index film layer and a floor height index film layer alternately superposition, and by rhombus, square or hexagonal copper lines and at least one of which CuO film layer are constituted described copper mesh grid conductive layer.Flexible copper grid base transparent conducting film of the present utility model can be as the succedaneum of ITO conductive film, it is widely used in the fields such as touch screen, Flexible Displays, electromagnetic shielding, compare traditional ITO conductive film, its production cost is lower, transmitance is higher, oxidation resistent susceptibility is more preferable, and the highest 1 order of magnitude of sheet resistivity, is particularly suited for large area, the preparation of high-resolution touch screen.

Description

A kind of flexible copper grid base transparent conducting film
Technical field
This utility model relates to field of optical films, relates to a kind of flexible copper grid base transparent conducting film.
Background technology
Transparent conductive film is the devices such as flat panel TV, touch screen, smart window glass, light emitting diode and photovoltaic cell The necessary component manufactured.In recent years, along with industries such as information (as touched display), the energy (such as photovoltaic, smart window glass) Development, the demand of transparent conductive film is increased dramatically by people, and in transparent conductive film, a most widely used class is Tin_doped indium oxide film, the ito thin film being i.e. commonly called as.It is known that the content that phosphide element is in the earth's crust is rare (about 0.05ppm), and being difficult to purify, along with the consumption of ito thin film significantly increases, its content is more and more rare, causes price abruptly increase, Thus increase the manufacturing cost of the industry such as touch screen, thin-film solar cells.Simultaneously as ito thin film is a kind of ceramic membrane, Its buckle resistance is poor, easy to crack through the rear film of repeatedly deformation, so that resistance significantly increases, causes component failure.Another Aspect, in order to manufacture the device such as giant display, large area solid luminescent plate, it is desirable to the square electricity of transparent conductive film used Resistance is necessarily less than 5 Ω/.Although this requirement can be met by increasing the thickness of ito thin film, but, its cost dramatically increases, The increase of this cost is because along with film thickness increases, and the sedimentation rate of ITO reduces, and causes major part ITO raw material unrestrained Take.Therefore, it is necessary to find a kind of novel transparent conductive film that bend resistance performance is good, square resistance is adjustable and with low cost.
In order to reduce the dependency degree to ITO, research worker have developed that to have the copper metallic mesh of low resistance characteristic transparent Conductive film.Copper metallic mesh transparent conductive film is due to its resistivity and transmitance is adjustable, bend resistance excellent performance, price are low Honest and clean and compatible with semiconductor technology, therefore, in the preparation of the aspects such as the huge flexible touch screen of industry, solaode, it is subject to To increasing favor, become the novel I TO substitution film that a class of primary study is feasible.But, due to general transparent lining The visible region transmitance of end PET itself be less than 92%, therefore, prepared by this PET transparent substrates copper mesh grid conductive layer it After, its compound transmitance is lower, is difficult to obtain high permeability and low-resistance transparent conductive film.
Summary of the invention
The purpose of this utility model is the deficiency existed for above-mentioned conductive film, proposes a kind of flexible copper grid base transparent Conductive film.Technical solution of the present utility model is that conductive film comprises: flexible transparent substrate;One anti-reflection layer; And a copper mesh grid conductive layer;Described anti-reflection layer is disposed in described flexible transparent film substrate and copper mesh grid conductive layer Between.Wherein, flexible transparent substrate comprises: polyethylene terephthalate and two-sided stiffened clear coat, described two-sided adds Hard clear coat is the polyacrylate coatings of ultra-violet curing;Anti-reflection layer comprises: low refractive index film layer and high index of refraction Thin layer;Copper mesh grid conductive layer comprises copper mesh gate layer and Cu oxide layer.
Described low refractive index film layer and high refractive index film layer are alternately stacked, thickness be 30~110nm and 10~ 140nm。
Described Cu oxide layer covers on copper metal layer or Cu oxide layer covers in copper metal top and bottom.
Described copper mesh gate layer is square by rhombus or hexagonal copper lines forms, and the live width of lines is 2~10 micro- Rice, degree of metalization is 1.25~2%.
The thickness of described copper mesh grid conductive layer is 200~500nm.
The thickness of described Cu oxide layer is 20~60nm.
This utility model has the advantage that and beneficial effect, and this utility model uses one anti-reflection of sputter on PET substrate Antireflection layer, improves the transmitance of substrate, and sputter copper metallic conduction composite bed, prepares high permeability low-resistance the most again Bright conductive film.Described composite film visible light transmitance is higher than 96%, and sheet resistivity is less than 10 Ω/, and chromatic value (b*) is little In 0.5, the reflectance on copper film surface is less than 5%, and the reflectance of the copper film back side (survey of PET film non-plated film) is less than 5%.
Transparent conductive film described in the utility model has the low-resistance characteristic of high permeability, and has the strongest environment Tolerance performance.
Described conductive film Core Feature layer, while ensureing high visible light transmissivity, antiradar reflectivity, has the lowest Sheet resistance.After being processed into the products such as touch screen, the visibility of lines is extremely low, can significantly improve the definition of screen. On the other hand, under hygrothermal environment, it is possible to prevent copper metal conducting layer oxidized and lost efficacy, keep good electric property.
This utility model relates to one and has high permeability, low-resistance flexible transparent conductive film, its Core Feature layer Including anti-reflection layer and copper mesh grid conductive layer.Described copper mesh grid conductive layer relies primarily on copper lines interconnection and has high permeability Photoelectric characteristic with extremely low sheet resistance.Owing to the oxidation resistance of Cu is weak, in use, with air contact, easily quilt It is oxidized to CuOx, and CuOx does not possess good electric conductivity, and copper lines shape can be made to change, thus impact is described The electric conductivity of conductive film and photoelectric properties.Use at copper surface sputter oxide, copper mesh grid can be protected in use Oxidized, keep good photoelectric characteristic.This utility model uses a kind of special anti-oxidation measure, i.e. at the table of copper metal film Copper-plated oxide (CuOx) is spattered in face, thus completely cuts off copper mesh grid conductive layer and air contact, prevents Cu metal oxidized.Meanwhile, Due to the existence of oxide (CuOx) layer of copper, it plays anti-reflection effect on copper metal layer surface, it is possible to significantly reduce Cu metal Reflectance, so that the lines visibility of copper mesh grid conductive layer is extremely low.
Owing to the visible region transmitance of general transparent substrates PET itself is less than 92%, therefore, at the transparent lining of this PET After preparing copper mesh grid conductive layer, its compound transmitance is lower at the end, is difficult to obtain high permeability and low-resistance electrically conducting transparent Thin film.In order to improve the transmitance that thin film is total under the conditions of keeping low sheet resistivity, this utility model uses on PET substrate One anti-reflection layer of sputter, improves the transmitance of substrate, and sputter copper metallic conduction composite bed, prepares high transmission the most again The low-resistance transparent conductive film of rate.
Flexible copper grid base transparent conducting film of the present utility model can be as the succedaneum of ITO conductive film, by extensively General being applied to the fields such as touch screen, Flexible Displays, electromagnetic shielding, compare traditional ITO conductive film, its production cost is lower, Transmitance is higher, and oxidation resistent susceptibility is more preferable, and the highest 1 order of magnitude of sheet resistivity, is particularly suited for large area, high-resolution The preparation of touch screen.
Accompanying drawing explanation
The profile of Fig. 1 a kind of flexible copper grid base transparent conducting film, in figure, anti-reflection layer is 2 layers, and copper mesh grid are led Electric layer is 2 layers;
The profile of Fig. 2 a kind of flexible copper grid base transparent conducting film, in figure, anti-reflection layer is 4 layers, and copper mesh grid are led Electric layer is 2 layers;
The profile of Fig. 3 a kind of flexible copper grid base transparent conducting film, in figure, anti-reflection layer is 5 layers, and copper mesh grid are led Electric layer is 3 layers.
Detailed description of the invention
As it can be seen, described laminated film comprises flexible and transparent polyethylene terephthalate (PET) substrate film, subtract Anti-antireflection layer and copper mesh grid conductive layer.
Transparent membrane substrate is by flexible and transparent polyethylene terephthalate and at dual coating ultra-violet curing Polyacrylate hardening coat is constituted.The thickness of flexible transparent substrate is 50 microns-125 microns.Poly-the third of described ultra-violet curing Olefin(e) acid Ester cured coating, uses traditional takeup type rubbing method to be coated uniformly on the both sides of flexible and transparent PET substrate, soft to improve The property intensity of transparent substrates, hardness and durability etc..
Described anti-reflection layer is multilayer lamination structure, covers the top layer of flexible and transparent PET substrate.Described stacked structure by Constitute selected from high refractive index film layer and low refractive index film layer.Described high refractive index film layer includes but not limited to selected from five oxygen Change two niobium (Nb2O5) or titanium dioxide (TiO2) material that formed.Described low refractive index film layer includes but not limited to selected from two Silicon oxide (SiO2) or Afluon (Asta) (MgF2) material that formed.Each layer in anti-reflection layer is by winding magnetic control sputtering Plated film is formed, and is sputtered by multi-chamber simultaneously, once completes the deposition of multilayer film.
Described copper mesh grid conductive layer is multilayer lamination structure, covers the upper strata of anti-reflection layer.Described stacked structure is by copper Metal film layer and copper oxide film layer composition.Copper metal film layer and copper oxide film layer are by winding magnetic control sputtering Plated film is formed, and is sputtered by multi-chamber simultaneously, once completes the deposition of multilayer film.After the films are deposited, quasiconductor is used to add Work technique, is processed into copper metal film layer and Cu oxide layer that rhombus is square or hexagonal grid, and its degree of metalization is 1.25%.
Embodiment one
As it is shown in figure 1, this illustrates an embodiment of a kind of flexible copper grid base transparent conducting film, described compound Thin film comprises flexible and transparent polyethylene terephthalate (PET) substrate film 1, anti-reflection layer 2 and copper mesh grid conductive layer 3。
Transparent membrane substrate 1 is by flexible and transparent polyethylene terephthalate and at dual coating ultra-violet curing Polyacrylate hardening coat is constituted.Preferably, the thickness of flexible transparent substrate 1 is 50 microns, it is also possible to be 125 microns.Institute State the polyacrylate hardening coat of ultra-violet curing, use traditional takeup type rubbing method to be coated uniformly on flexible and transparent PET lining The both sides at the end, to improve the intensity of flexible transparent substrate 1, hardness and durability etc..
Described anti-reflection layer 2 is multilayer lamination structure, covers the top layer of flexible and transparent PET substrate 1.Described stacked structure Constituted by selected from high refractive index film layer 21 and low refractive index film layer 22.Described high refractive index film layer 21 includes but not limited to Selected from niobium pentaoxide (Nb2O5) or titanium dioxide (TiO2) material that formed.Described low refractive index film layer 22 include but not It is limited to selected from silicon dioxide (SiO2) or Afluon (Asta) (MgF2) material that formed.In preferred embodiments, high refractive index film Layer 21 is all niobium pentaoxide (Nb2O5), low refractive index film layer 22 is all silicon dioxide (SiO2).Layer (21 and 22) is by rolling up Wound magnetron sputtering plating is formed, and is sputtered by multi-chamber simultaneously, once completes the deposition of multilayer film.First deposition five oxidation two Niobium 21, its thickness is about 107nm, covers silicon dioxide layer 22 the most thereon, and its thickness is about 89nm.
Described copper mesh grid conductive layer 3 is multilayer lamination structure, covers the upper strata of anti-reflection layer 2.Described stacked structure by Copper metal film layer 31 and copper oxide film layer 32 form.Copper metal film layer 31 and copper oxide film layer 32 are by winding Formula magnetron sputtering plating is formed, and is sputtered by multi-chamber simultaneously, once completes the deposition of multilayer film.First deposited copper metal thin film Layer 31, its thickness is about 300nm, covers copper oxide film layer 32 the most thereon, and its thickness is about 35nm.In thin film deposition Afterwards, use semiconducter process, copper metal film layer 31 and Cu oxide layer 32 are processed into rhombus or square or six limits The grid of shape, its degree of metalization is 1.25%.Described composite film visible light transmitance is higher than 93%, and sheet resistivity is less than 10 Ω/, chromatic value (b*) is less than 0.5, and the reflectance on copper film surface is less than 5%, the reflection of the copper film back side (survey of PET film non-plated film) Rate is less than 60%.
Embodiment two
As in figure 2 it is shown, this illustrates an embodiment of a kind of flexible copper grid base transparent conducting film, described compound Thin film comprises flexible and transparent polyethylene terephtalate substrate film 1, anti-reflection layer 12 and copper mesh grid conductive layer 13。
Transparent membrane substrate 1 is by flexible and transparent polyethylene terephthalate and at dual coating ultra-violet curing Polyacrylate hardening coat is constituted.Preferably, the thickness of flexible transparent substrate 1 is 50 microns, it is also possible to be 125 microns.Institute State the polyacrylate hardening coat of ultra-violet curing, use traditional takeup type rubbing method to be coated uniformly on flexible and transparent PET lining The both sides at the end, to improve the intensity of flexible transparent substrate 1, hardness and durability etc..
Described anti-reflection layer 12 is multilayer lamination structure, covers the top layer of flexible and transparent PET substrate 1.Described stacking knot Structure by selected from high refractive index film layer 121 and 123 and low refractive index film layer 122 and 124 constitute.Described high refractive index film layer 121 and 123 include but not limited to selected from niobium pentaoxide Nb2O5Or titanium dioxide (TiO2) material that formed.Described low refraction Rate thin layer 122 and 124 includes but not limited to selected from silicon dioxide (SiO2) or Afluon (Asta) (MgF2) material that formed.Excellent Selecting in embodiment, high refractive index film layer (121 and 123) is all niobium pentaoxide (Nb2O5), low refractive index film layer 122 He 124 is all silicon dioxide (SiO2)。
In preferred embodiments, anti-reflection layer 12 is by being deposited on substrate 1 and thickness is about the first medium of 18nm Layer 121, thickness about 23nm and the covering second dielectric layer 122 of first medium layer 121, thickness are about 117nm and cover second Jie 4th dielectric layer 124 of the 3rd dielectric layer 123 of matter layer 122 and thickness about 89nm and covering the 3rd dielectric layer 123 forms.The One dielectric layer 121 to the 4th dielectric layer 124 is to be formed by winding magnetic control sputtering plated film, is sputtered by multi-chamber, once simultaneously Complete the deposition of multilayer film.
Described copper mesh grid conductive layer 13 is multilayer lamination structure, covers the upper strata of anti-reflection layer 12.Described stacked structure It is made up of copper metal film layer 131 and copper oxide film layer 132.Copper metal film layer 131 and 132 is to be spattered by takeup type magnetic control Penetrate plated film to be formed, sputtered by multi-chamber simultaneously, once complete the deposition of multilayer film.First deposited copper metal thin layer 131, its Thickness is about 300nm, covers copper oxide film layer 132 the most thereon, and its thickness is 3nm.After the films are deposited, use Semiconducter process, is processed into copper metal film layer 131 and Cu oxide layer 132 that rhombus is square or hexagonal net Grid, its degree of metalization is 1.25%.Described composite film visible light transmitance is higher than 96%, and sheet resistivity is less than 10 Ω/, color Angle value b* is less than 0.5, and the reflectance on copper film surface is less than 5%, and the reflectance of the copper film back side (survey of PET film non-plated film) is less than 60%.
Embodiment three
As it is shown on figure 3, this illustrates an embodiment of a kind of flexible copper grid base transparent conducting film, described compound Thin film comprises flexible and transparent polyethylene terephtalate substrate film 1, anti-reflection layer 22 and copper mesh grid conductive layer 23。
Transparent membrane substrate 1 is by flexible and transparent polyethylene terephthalate and at dual coating ultra-violet curing Polyacrylate hardening coat is constituted.Preferably, the thickness of flexible transparent substrate 1 is 50 microns, it is also possible to be 125 microns.Institute State the polyacrylate hardening coat of ultra-violet curing, use traditional takeup type rubbing method to be coated uniformly on flexible and transparent PET lining The both sides at the end, to improve the intensity of flexible transparent substrate 1, hardness and durability etc..
Described anti-reflection layer 22 is multilayer lamination structure, covers the top layer of flexible and transparent PET substrate 1.Described stacking knot Structure by selected from high refractive index film layer 222 and 224 and low refractive index film layer 221,223 and 225 constitute.Described high index of refraction is thin Film layer 222 and 224 includes but not limited to selected from niobium pentaoxide (Nb2O5) or titanium dioxide (TiO2) material that formed.Described Low refractive index film 221,223 and 22 includes but not limited to selected from silicon dioxide (SiO2) or Afluon (Asta) (MgF2) material that formed Material.In preferred embodiments, high refractive index film layer 222 and 224 is all titanium dioxide (TiO2), low refractive index film layer 221,223 and 225 is all Afluon (Asta) (MgF2)。
In preferred embodiments, anti-reflection layer 22 is by being deposited on substrate 1 and first medium layer that thickness is 45nm 221, thickness is 17nm and covers the second dielectric layer 222 of first medium layer 221, thickness is 38nm and covers second dielectric layer 3rd dielectric layer 223 of 222, thickness are 105nm and the 4th dielectric layer 224 and the thickness that cover the 3rd dielectric layer 223 is 5th dielectric layer 225 of 80nm and covering the 4th dielectric layer 224 forms.First medium layer 221 to 225 is to be spattered by takeup type magnetic control Penetrate plated film to be formed, sputtered by multi-chamber simultaneously, once complete the deposition of multilayer film.
Described copper mesh grid conductive layer 23 is multilayer lamination structure, covers the upper strata of anti-reflection layer 22.Described stacked structure It is made up of copper metal film layer 232 and copper oxide film layer 231 and 233.Copper oxide film layer 231 and 233 and copper metal Thin layer 232 is to be formed by winding magnetic control sputtering plated film, is sputtered by multi-chamber simultaneously, once completes the deposition of multilayer film. First deposition copper oxide film layer 231, its thickness is 40nm, covers copper metal film layer 232 the most thereon, and its thickness is 300nm, finally one layer of copper oxide film layer 233 of deposition, its thickness is 35nm.After the films are deposited, quasiconductor is used to add Work technique, is processed into copper metal film layer 232 and Cu oxide layer 231 and 233 that rhombus is square or hexagonal grid, its Degree of metalization is 1.25%.Described composite film visible light transmitance is higher than 96%, and sheet resistivity is less than 10 Ω/, chromatic value (b*) less than 0.5, the reflectance on copper film surface is less than 5%, and the reflectance of the copper film back side (survey of PET film non-plated film) is less than 5%.
The parameter of embodiment one to embodiment three is as shown in table 1 to table 3.
Table 1
Table 2
Table 3
Preferred embodiment described in the utility model, its detailed description is intended to illustrative, and it is right to should not be understood as The restriction of disclosure scope.Any independent material disclosed in the utility model, numerical value or characteristic all can any with the disclosure Other materials, numerical value or characteristic are exchanged and are used, as the specific embodiments given by the present invention.Anyone is in this practicality Other various forms of products all can be drawn under novel enlightenment, no matter but in its material, shape or structure, make any change, Every have same as the present application or similar technical scheme, within all falling within protection scope of the present invention.

Claims (6)

1. a flexible copper grid base transparent conducting film, is characterized in that, conductive film comprises: flexible transparent substrate;One subtracts Anti-antireflection layer;And a copper mesh grid conductive layer;Described anti-reflection layer is disposed in described flexible transparent film substrate and copper Between grid conductive layer, wherein, flexible transparent substrate comprises: polyethylene terephthalate and two-sided stiffened clear coat, Described two-sided stiffened clear coat is the polyacrylate coatings of ultra-violet curing;Anti-reflection layer comprises: low refractive index film layer With high refractive index film layer;Copper mesh grid conductive layer comprises copper mesh gate layer and Cu oxide layer.
A kind of flexible copper grid base transparent conducting film the most according to claim 1, is characterized in that, described low-refraction is thin Film layer and high refractive index film layer are alternately stacked, and thickness is 30~110nm and 10~140nm.
A kind of flexible copper grid base transparent conducting film the most according to claim 1, is characterized in that, described Cu oxide layer Cover on copper metal layer or Cu oxide layer covers in copper metal top and bottom.
A kind of flexible copper grid base transparent conducting film the most according to claim 1, is characterized in that, described copper mesh gate layer Or hexagonal copper lines square by rhombus forms, and the live width of lines is 2~10 microns, and degree of metalization is 1.25~2%.
A kind of flexible copper grid base transparent conducting film the most according to claim 1, is characterized in that, described copper mesh grid are led The thickness of electric layer is 200~500nm.
A kind of flexible copper grid base transparent conducting film the most according to claim 1, is characterized in that, described Cu oxide layer Thickness be 20~60nm.
CN201620497516.6U 2016-05-26 2016-05-26 A kind of flexible copper grid base transparent conducting film Active CN205722840U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201620497516.6U CN205722840U (en) 2016-05-26 2016-05-26 A kind of flexible copper grid base transparent conducting film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201620497516.6U CN205722840U (en) 2016-05-26 2016-05-26 A kind of flexible copper grid base transparent conducting film

Publications (1)

Publication Number Publication Date
CN205722840U true CN205722840U (en) 2016-11-23

Family

ID=57300591

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201620497516.6U Active CN205722840U (en) 2016-05-26 2016-05-26 A kind of flexible copper grid base transparent conducting film

Country Status (1)

Country Link
CN (1) CN205722840U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107170509A (en) * 2017-06-23 2017-09-15 中国南玻集团股份有限公司 Flexible conductive film and preparation method thereof
CN108089771A (en) * 2018-02-13 2018-05-29 京东方科技集团股份有限公司 Touch base plate, display panel, display device
CN110196524A (en) * 2019-05-30 2019-09-03 Oppo广东移动通信有限公司 Electrochromic device and preparation method thereof, electronic equipment
CN116368176A (en) * 2020-10-06 2023-06-30 捷德货币技术有限责任公司 Transparent conductive film and application thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107170509A (en) * 2017-06-23 2017-09-15 中国南玻集团股份有限公司 Flexible conductive film and preparation method thereof
CN108089771A (en) * 2018-02-13 2018-05-29 京东方科技集团股份有限公司 Touch base plate, display panel, display device
CN110196524A (en) * 2019-05-30 2019-09-03 Oppo广东移动通信有限公司 Electrochromic device and preparation method thereof, electronic equipment
CN116368176A (en) * 2020-10-06 2023-06-30 捷德货币技术有限责任公司 Transparent conductive film and application thereof

Similar Documents

Publication Publication Date Title
JP4961786B2 (en) Transparent conductive film and transparent conductive film using the same
CN205722840U (en) A kind of flexible copper grid base transparent conducting film
JP5549216B2 (en) Transparent conductive laminate, method for producing the same, and touch panel
TWI594886B (en) Low resistance transparent conductive film and its preparation method
CN108074991A (en) A kind of composite transparent conductive film
TW200904246A (en) Substrate bearing a discontinuous electrode, organic light-emitting device incorporating it, and their manufacture
US10175397B2 (en) Optical film including an infrared absorption layer
CN101429640A (en) Transparent conductive film production method
JP4349794B2 (en) Method for producing conductive transparent substrate with multilayer antireflection film
CN102326274A (en) Transparent substrate for photonic devices
CN105144045A (en) Conductive structure and preparation method therefor
JP2015510624A (en) Transparent conductive film with excellent electrical characteristics and touch panel using the same
JP6292225B2 (en) Transparent conductor
CN202782020U (en) Conductive glass
JP6319302B2 (en) Transparent conductor and method for producing the same
CN105845203B (en) A kind of flexible copper grid base transparent conducting film
JP2009032548A (en) Transparent conductive membrane, its manufacturing method, and touch panel using transparent conductive membrane
JP4406237B2 (en) A method for producing a transparent substrate with a multilayer film having conductivity.
CN106406645B (en) Flexible copper mesh grid-based touch screen and preparation method thereof
Kim et al. ZnSnO/Ag/indium tin oxide multilayer films as a flexible and transparent electrode for photonic devices
KR102032011B1 (en) Conductive laminate and transparent electrode comprising thereof
CN104166285A (en) ITO conducting glass and preparation method thereof
Kim et al. Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films
WO2015159805A1 (en) Laminate, conductive laminate, and electronic device
WO2015087895A1 (en) Transparent conductive body

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant