TWI594886B - Low resistance transparent conductive film and its preparation method - Google Patents

Description

Low-resistance transparent conductive film and preparation method thereof

The invention relates to the field of optoelectronic components, in particular to a low-resistance transparent conductive film and a preparation method thereof.

Transparent conductive films (TCFs) have the characteristics of good visible light and good electrical conductivity. They are widely used in various types of flat panel displays, LED lamps, touch screens, photovoltaic cells, smart windows, EMI shielding films and other fields.

The most widely used transparent conductive film is mainly made of indium tin oxide (ITO) as a conductive material on hard substrate materials such as ceramics and glass. It has been used in optoelectronic devices for more than sixty years. However, such transparent conductive films have defects such as high material cost, fragility and brittleness, poor flexibility, and difficulty in deformation, and are not suitable as materials for preparing flexible transparent conductive films, which greatly limits the application of transparent conductive films.

With the increasing demand and requirements of displays, touch screens, photovoltaic cells, etc., conventional ITO films have been unable to adapt to flexible bending applications, and higher electrical conductivity, light transmission and the like.

In the research of transparent conductive film and flexible conductive film, nano silver wire film has been widely concerned and studied due to its high transparency, low surface resistance, smooth surface and good flexibility. However, since the nano silver film is to be electrically connected by stacking a plurality of nano silver wires, the adhesion is not good, the square resistance is high, the transmittance is greatly affected by the concentration of the nano silver wire, and the haze value is high. Easy to oxidize, the price of conductive liquid is high The expensive and pre-treatment processes are insufficient, and the commercial application of nano-silver film is greatly limited.

In order to solve the above problems, it is an object of the present invention to provide a low-resistance transparent conductive film. The low-resistance transparent conductive film is a three-layer film structure of a transparent base film/metal mesh film layer/transparent conductive film layer, which has high optical transmittance, low surface resistance, low haze value, neutral color, and is easy to prepare. On a hard substrate or a flexible substrate surface.

Another object of the present invention is to provide a method for producing the above low-resistance transparent conductive film.

The low-resistance transparent conductive film of the present invention comprises: a metal mesh film layer having a plurality of disordered pore structures, wherein the shape, size and distribution of the disordered pore structure in the metal mesh film layer are random, and A single disordered pore structure having a narrow side width of less than 1000 nm and a length of less than 5000 nm; a transparent base film laminated on the lower surface of the metal thin film layer; and a transparent conductive film layer laminated on the upper surface of the metal thin film layer.

Preferably, the transparent base film is a zinc oxide-based transparent film layer; and the metal mesh film layer is a silver mesh layer.

Specifically, the zinc oxide-based transparent film layer is a zinc oxide transparent film layer (ZnO), an aluminum-doped zinc oxide transparent film layer (AZO), a tin-doped zinc oxide transparent film layer (ZTO), and a gallium-doped zinc oxide transparent film. One of a layer (GZO), an indium-doped zinc oxide transparent film layer (IZO) or an indium-doped gallium zinc oxide transparent film layer (IGZO).

In order to prevent oxidation, corrosion or granulation of pure silver, the silver mesh layer may be a silver alloy doped with 0.5% to 5% by weight of other metal components, such as platinum, titanium, gold, One of copper, chromium or nickel; Alternatively, a barrier layer may be added to prevent oxidation, corrosion or granulation of pure silver, in particular, a first barrier layer is deposited on the upper surface of the silver mesh layer; the first barrier layer is a nickel metal layer a chromium metal layer, a titanium metal layer, a gold metal layer, a copper metal layer, a nickel-chromium alloy layer, a nickel metal oxide layer, a chromium metal oxide layer, a titanium metal oxide layer or a copper metal oxide layer; The thickness of the first barrier layer is 1-10 nm; in order to more effectively prevent oxidation, corrosion or granulation of pure silver, after depositing the first barrier layer on the upper surface of the silver mesh layer, in the silver mesh Depositing a second barrier layer on a lower surface of the layer; the second barrier layer is a nickel metal layer, a chromium metal layer, a titanium metal layer, a gold metal layer, a copper metal layer, a nickel-chromium alloy layer, a nickel metal oxide layer, a chromium metal One of an oxide layer, a titanium metal oxide layer or a copper metal oxide layer; the second barrier layer has a thickness of 1 to 10 nm.

Preferably, the transparent conductive film layer is an indium tin oxide film layer (ITO), an aluminum-doped zinc oxide film layer (AZO), an antimony-doped tin oxide film layer (ATO), a zinc-doped indium oxide film layer (IZO), A tin-doped zinc oxide film layer (ZTO), a molybdenum oxide film layer (MoO3) or a titanium nitride layer (TiN).

Preferably, the transparent base film has a thickness of 10 to 70 nm; the metal mesh film layer has a thickness of 5 to 20 nm; and the transparent conductive film layer has a thickness of 10 to 70 nm.

The transparent conductive film layer covers the upper surface of the metal mesh film layer, and fills a cavity of the disordered hole structure of the metal mesh film layer, so that the transparent conductive film layer is connected to the transparent bottom film The light transmittance of the low-resistance transparent conductive film can be improved, and the color of the low-resistance transparent conductive film is neutral.

The preparation method of the above low-resistance transparent conductive film comprises the following steps Step: S1, under normal temperature or low temperature conditions, a transparent base film is deposited on the surface of the substrate by magnetron sputtering; S2, a layer of disordered microsphere mask is plated on the surface of the transparent base film; S3, application The room temperature magnetron sputtering process deposits a metal film on the surface of the transparent base film coated with the microsphere mask; S4, removes the microsphere mask to obtain a metal mesh film layer with disordered pore structure; S5, room temperature Or under low temperature conditions, a transparent conductive film layer is deposited on the surface of the metal mesh film layer having the disordered pore structure by a magnetron sputtering process, that is, the preparation of the low-resistance transparent conductive film is completed.

Preferably, the substrate in the step S1 may be pre-plated with one or more transparent optical films before depositing the transparent base film according to the application, and specifically may be a ruthenium dioxide film, a ruthenium pentoxide film, a titanium dioxide film or a nitrogen. Peptide film.

Preferably, the transparent base film in the step S1 is a zinc oxide-based transparent film layer, and the specific material may be zinc oxide, aluminum-doped zinc oxide, tin-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide or indium-doped gallium. One of zinc oxide.

Preferably, the transparent base film deposited in step S1 has a thickness of 10 to 70 nm and a visible light refractive index of more than 1.5.

Preferably, the transparent base film is a zinc oxide-based transparent film layer; the zinc oxide-based transparent film layer is a zinc oxide transparent film layer, an aluminum-doped zinc oxide transparent film layer, a tin-doped zinc oxide transparent film layer, and a gallium-doped layer. One of a transparent zinc oxide layer, an indium-doped zinc oxide transparent film layer or an indium gallium zinc oxide transparent film layer.

Specifically, the Chinese invention patent ZL can be adopted in step S2. The method disclosed in 201110141276.8 coats the surface of the transparent base film with a microsphere mask.

The microsphere layer mask in step S2 is a disorderly array of monodisperse microspheres.

The microspheres are preferably microspheres having a low isoelectric point, and specifically may be polystyrene microspheres, polymethyl methacrylate microspheres or cerium oxide microspheres. The microspheres have a diameter ranging from 100 to 1000 nm; the surface area coverage of the microspheres on the surface of the transparent base film is 10% to 40%.

Preferably, the arrangement of the microspheres in the transparent base film is irregularly distributed in irregular intervals, each cluster contains 1-20 microspheres, and each cluster has an inconsistent shape and size. The width of the clusters does not exceed 1000 nm, and the length of each cluster does not exceed 5000 nm.

Preferably, the thickness of the metal film in step S3 is 5-20 nm. The thickness of the metal film is determined according to the actual required surface resistance requirement, and the larger the thickness, the smaller the sheet resistance.

Preferably, the material of the metal thin film in step S3 is silver.

More preferably, the material of the metal thin film in step S3 is a silver alloy doped with 0.5% to 5% by weight of other metal components, such as platinum, titanium, gold, copper, chromium or nickel. One of the others.

Specifically, in step S4, the microsphere mask can be removed by means of isopropyl alcohol wiping, pure water ultrasonic cleaning or boiling ethanol cleaning.

Preferably, the transparent conductive film layer has a thickness of 10 to 70 nm and a visible light refractive index of more than 1.5 in the step S5.

Preferably, in the step S5, the transparent conductive film layer is an indium tin oxide film layer, an aluminum-doped zinc oxide film layer, an antimony-doped tin oxide film layer, a zinc-doped indium oxide film layer, and tin-doped oxygen. A zinc film layer, a molybdenum oxide film layer or a titanium nitride film layer.

The advantages and effects of the present invention over the prior art:

(1) The low-resistance transparent conductive film of the present invention is a three-layer film structure of a transparent base film/metal mesh film layer/transparent conductive film layer, because the metal mesh film layer has a unique disordered pore structure, The low-resistance transparent conductive film has better conductivity than the transparent conductive film of the prior art, and the sheet resistance can reach 20 ohms/square or less.

(2) The metal mesh film layer of the low-resistance transparent conductive film of the present invention has a disordered pore structure which is a nano-scale pore size, a continuous metal film having no pores and a micron-scale pore size (a pore width greater than 1000 nm) The metal mesh of M) can enhance the surface plasmon effect, that is, it can excite stronger surface plasmons under the action of incident light, and the surface plasmons on both sides of the metal mesh film layer The degree of coupling between the two is stronger, so that the optical anti-reflection effect of the surface plasmon can be further strengthened by superposing the high-refractive-index transparent dielectric layer on both sides of the metal mesh film layer, thereby achieving higher visible light transmission. rate.

(3) The arrangement of the disordered pore structure and the disorder of the shape and size of the metal mesh film layer of the low-resistance transparent conductive film of the present invention avoid the appearance of color interference fringes, so that the low-resistance transparent conductive The film looks neutral in color.

1‧‧‧Low-resistance transparent conductive film

100‧‧‧substrate

200‧‧‧Transparent base film

300‧‧‧Metal mesh film layer

400‧‧‧Transparent conductive film layer

1 is a schematic structural view of a low-resistance transparent conductive film according to Embodiment 1 of the present invention.

2 is a scanning electron microscope image view of a metal mesh film layer of the low-resistance transparent conductive film according to Embodiment 1 of the present invention.

3 is a thin metal mesh of the low-resistance transparent conductive film according to Embodiment 1 of the present invention; Atomic force microscopy imaging of the film layer.

4 is a graph showing the visible light transmittance of a low-resistance transparent conductive film of different surface resistances of the present invention.

Fig. 5 is a view showing the surface roughness of the low-resistance transparent conductive film of the first embodiment.

One or more embodiments will be described in detail below with reference to the drawings. The detailed description is provided in connection with the embodiments, but is not limited to any specific examples. The scope of the invention is to be limited only by the scope of the invention, including various alternatives, modifications and equivalents. The specific details set forth in the following description are intended to provide a comprehensive understanding. These details are provided for illustrative purposes, and the techniques can be implemented in accordance with the scope of the patent application without some or all of these specific details. For the sake of brevity, technical material that is known in the technical field of the embodiments is not described in detail to avoid unnecessarily obscuring the description.

[Example 1]

As shown in FIG. 1, a low-resistance transparent conductive film 1 is deposited on the surface of a substrate 100. The low-resistance transparent conductive film 1 comprises: a transparent base film 200 deposited on the surface of the substrate 100; a metal mesh film layer 300 having a plurality of disordered pore structures deposited on the upper surface of the transparent base film 200; 2 and FIG. 3, FIG. 2 is a scanning electron microscope image of the metal mesh film layer 300, and FIG. 3 is an atomic force microscope image of the metal mesh film layer 300. As can be seen from FIG. 2 and FIG. 3, the disorder The shape, size and distribution of the pore structure in the metal mesh film layer 300 are random; and a transparent conductive film layer deposited on the upper surface of the metal mesh film layer 300 400.

In the present embodiment, the substrate 100 is a transparent glass substrate having a thickness of 0.7 mm.

The transparent base film 200 is preferably a zinc oxide-based transparent film layer having a thickness of 10 to 70 nm. In the embodiment, the transparent base film 200 is an aluminum-doped zinc oxide transparent film layer having a thickness of 32 nm.

In this embodiment, the metal mesh film layer 300 is a silver mesh layer having a thickness of 10 nm.

Since the lattice constant of the zinc oxide-based material (0.3-0.5 nm) is close to the lattice constant of polycrystalline silver (0.4 nm), the silver mesh layer deposited on the zinc oxide-based film layer is deposited in other Better crystal lattice matching and less stress on the transparent film, which can achieve better film flatness, continuity and foldability, and help to optimize the thickness, transmittance and surface resistance of the silver mesh layer. And stability.

In this embodiment, the shape, size, and distribution of the disordered pore structure of the silver mesh layer are random, and the width of the narrow side of any single disordered pore structure is less than 1000 nm and the length is less than 5000 nm. .

The transparent conductive film layer 400 may be an indium tin oxide film layer, an aluminum-doped zinc oxide film layer, an antimony-doped tin oxide film layer, a zinc-doped indium oxide film layer, a tin-doped zinc oxide film layer, a molybdenum oxide film layer or nitrided. In the present embodiment, the transparent conductive film layer 400 is an indium tin oxide film layer and has a thickness of 40 nm.

Since the metal mesh film layer 300 has a disordered hole structure, the transparent conductive film layer 400 deposited on the metal mesh film layer 300 fills all the disordered holes, and the transparent conductive film layer 400 is connected to the transparent base film 200. The light transmittance of the low-resistance transparent conductive film 1 can be improved.

The preparation method of the low-resistance transparent conductive film of this embodiment is as follows:

S1, under normal temperature or low temperature conditions, a transparent aluminum-doped zinc oxide transparent base film is deposited on the surface of the glass substrate by magnetron sputtering; the normal temperature or low temperature condition is 20-200 ° C temperature condition; magnetron sputtering process The method for depositing a thin film is a conventional conventional process. In this embodiment, the transparent underlayer film is optimized in the wavelength range by mainly adjusting magnetization sputtering process parameters such as deposition temperature, deposition gas pressure, sputtering power, and oxygen content in a working gas. - 700 nm of visible light transmittance, and visible light refractive index greater than 1.5.

S2, plating a layer of disordered microsphere mask on the surface of the transparent base film; using the relatively high electric point of the zinc oxide-based material, adopting the immersion plating method disclosed in the Chinese invention patent ZL 201110141276.8, in the aluminum doping The surface of the zinc oxide transparent base film is covered with a disorderly array of monodisperse microspheres, and the microspheres are made of a low isoelectric point material. In this embodiment, polystyrene microspheres are used. The diameter of the polystyrene microspheres ranges from 100 to 1000 nanometers, and the arrangement of the polystyrene microspheres in the aluminum-doped zinc oxide transparent base film is irregularly distributed in irregular small clusters, and each cluster contains 1- 20 microspheres, each cluster has the same shape and size, the width of each cluster is less than 1000 nm, and the length of each cluster is no more than 5000 nm.

S3, applying a normal temperature magnetron sputtering process to deposit a silver layer on the surface of the transparent base film coated with the microsphere mask; the thickness of the silver layer is 5-20 nm, and the thickness is according to the actual surface resistance requirement It is determined that the larger the thickness, the smaller the sheet resistance.

S4, removing the microsphere mask by wiping with isopropyl alcohol, ultrasonic cleaning with pure water or boiling ethanol, thereby forming a surface on the surface of the aluminum-doped zinc oxide transparent base film The layer has a silver mesh layer with a disordered pore structure.

S5, under normal temperature or low temperature conditions, a transparent indium tin oxide film layer is deposited on the upper surface of the silver mesh layer having disordered pore structure by a magnetron sputtering process, the thickness is 40 nm, and the visible light refractive index is greater than 1.5; The parameters are optimized to optimize the magnetron sputtering process to maximize the visible light transmittance of the transparent indium tin oxide film layer while ensuring that the resistivity is not higher than 1×10-3 Ω. Cm. The preparation of the low-resistance transparent conductive film is completed through the above steps.

According to the method of Example 1, the thickness of the silver mesh layer was adjusted so that the surface resistance of the finally obtained silver mesh layer was 15 ohm/square, and a low-resistance transparent conductive film was obtained, which was designated as F1. It has been found that the low-resistance transparent conductive film F1 has a visible light transmittance of 90.7% at a wavelength of 550 nm, and an average visible light transmittance of 88.3% in a wavelength range of 470-700 nm.

According to the method of Example 1, the thickness of the silver mesh layer was adjusted so that the surface resistance of the finally obtained silver mesh layer was 10 ohm/square, and a low-resistance transparent conductive film was obtained, which was designated as F2. The visible light transmittance curves of the low-resistance transparent conductive films F1 and F2 are as shown in FIG. 4, wherein the a curve is a visible light transmittance curve of the low-resistance transparent conductive film F1 having a sheet resistance of 15 ohm/square, and the b curve is a sheet resistance. Visible light transmittance curve of a 10 ohm/square low resistance transparent conductive film F2. Because the thickness of the silver mesh layer is also reduced as the surface resistance is increased, as shown in FIG. 4, the larger the sheet resistance, the higher the visible light transmittance; and the low-resistance transparent conductive film F1 having a surface resistance of 15 ohms. The rate can reach 90.7%.

The low-resistance transparent conductive film of the present invention has a good flatness and thus has a small haze value.

As shown in FIG. 5, the low-resistance transparent conductive film in this embodiment is at 0.7. The surface roughness on a millimeter thick non-polished glass substrate was RPV = 18 nm, Rq = 4.5 nm, Ra = 3.7 nm, and the haze value at a wavelength of 550 nm was less than 2%.

[Embodiment 2]

A low resistance transparent conductive film deposited on a surface of a flexible substrate. The structure of the low-resistance transparent conductive film of the embodiment is similar to that of the low-resistance transparent conductive film of the first embodiment, comprising: a layer of a transparent film of zinc oxide deposited on the surface of the flexible substrate; and a layer deposited on the transparent base film. a metal mesh film layer having a plurality of disordered pore structures on the surface; the shape, size and distribution of the disordered pore structure in the metal mesh film layer are random; and a layer deposited on the upper surface of the metal mesh film layer Transparent conductive film layer.

In this embodiment, the flexible substrate is a PET flexible substrate; the zinc oxide-based transparent film layer is a transparent zinc oxide film layer having a thickness of 70 nm; and the metal mesh film layer is a silver alloy mesh layer. The thickness of the silver alloy mesh layer is silver platinum alloy, wherein the weight ratio of platinum in the silver platinum alloy is 0.5%; the transparent conductive film layer is a zinc-doped indium oxide film layer, and the thickness It is 10 nm.

The method for preparing the low-resistance transparent conductive film of the present embodiment is the same as that of the first embodiment, except that the materials of the film layers are different; and the processes of the magnetron sputtering process and the immersion plating method are adjusted according to the film thickness and structure. parameter.

[Example 3]

A low resistance transparent conductive film deposited on a hard substrate surface. this The low-resistance transparent conductive film of the embodiment comprises: a zinc oxide-based transparent film layer deposited on the surface of the rigid substrate; a first barrier layer deposited on the zinc oxide-based transparent film layer; and a layer deposited on the upper surface of the first barrier layer a metal mesh film layer having a plurality of disordered pore structures; the shape, size and distribution of the disordered pore structure in the metal mesh film layer are random; the second barrier deposited on the metal mesh film layer a layer; and a layer of a transparent conductive film deposited on the upper surface of the second barrier layer.

In this embodiment, the hard substrate is a glass substrate; the zinc oxide-based transparent film layer is an indium gallium zinc oxide transparent film layer having a thickness of 10 nm; and the first barrier layer is a nickel metal layer. The thickness of the metal mesh film layer is a silver mesh layer having a thickness of 5 nm; the second barrier layer is a copper metal layer having a thickness of 10 nm; and the transparent conductive film layer is doped A tantalum tin oxide film layer having a thickness of 10 nm.

The method for preparing the low-resistance transparent conductive film of the embodiment comprises the following steps: depositing a transparent indium gallium zinc oxide transparent film layer on the surface of the glass substrate by a magnetron sputtering process at a temperature of S1 and 20 ° C, the thickness is 10 Nano; S2, depositing a layer of nickel metal in a transparent film layer of indium gallium-doped zinc oxide with a thickness of 5 nm; S3, plating a layer of disordered polymethyl methacrylate microspheres on the surface of the nickel metal layer Membrane, polymethyl methacrylate microspheres having a diameter ranging from 100 to 1000 nm and a surface area coverage of 40%; S4, applying a normal temperature magnetron sputtering process on the surface of a nickel metal layer coated with a microsphere mask Depositing a layer of silver; S5, removing the microsphere mask by boiling ethanol cleaning, thereby forming a silver mesh layer having a disordered pore structure on the surface of the nickel metal layer; S6, depositing a layer of copper on the surface of the silver mesh layer The metal layer has a thickness of 10 nm; at S7 and 100 ° C, a layer of antimony-doped tin oxide film is deposited on the surface of the copper metal layer by magnetron sputtering, the thickness is 10 nm, and the visible light refractive index is greater than 1.5; Parameter optimization magnetron sputtering In order to achieve a transparent layer of indium tin oxide maximize visible light transmittance while maintaining a resistivity not higher than 1 × 10 ^-3 Ω. Cm. The preparation of the low-resistance transparent conductive film is completed through the above steps.

Although the above examples have been described in detail to facilitate a clear understanding, the invention is not limited to the details. There are many alternative ways of implementing the invention. The disclosed examples are illustrative and not restrictive.

1‧‧‧Low-resistance transparent conductive film

100‧‧‧substrate

200‧‧‧Transparent base film

300‧‧‧Metal mesh film layer

400‧‧‧Transparent conductive film layer

Claims (12)

A low-resistance transparent conductive film comprising: a metal mesh film layer having a plurality of disordered pore structures, wherein the shape, size and distribution of the disordered pore structure in the metal mesh film layer are random, and any single a transparent bottom film having a narrow side width of less than 1000 nm and a length of less than 5000 nm; a transparent base film laminated on a lower surface of the metal thin film layer; and a transparent conductive film layer laminated on an upper surface of the metal thin film layer; The metal mesh film layer is a silver mesh layer; a first barrier layer is deposited on an upper surface of the silver mesh layer; the first barrier layer is a nickel metal layer, a chromium metal layer, a titanium metal layer, and a gold metal layer. a copper metal layer, a nickel-chromium alloy layer, a nickel metal oxide layer, a chromium metal oxide layer, a titanium metal oxide layer or a copper metal oxide layer; the first barrier layer has a thickness of 1-10 Meter. The low-resistance transparent conductive film of claim 1, wherein the transparent base film is a zinc oxide-based transparent film layer. The low-resistance transparent conductive film of claim 2, wherein the zinc oxide-based transparent film layer is a zinc oxide transparent film layer, an aluminum-doped zinc oxide transparent film layer, a tin-doped zinc oxide transparent film layer, and a gallium-doped zinc oxide transparent film. One of a layer, an indium-doped zinc oxide transparent film layer or an indium gallium zinc oxide transparent film layer. The low-resistance transparent conductive film of claim 1, wherein the silver mesh layer is a silver alloy doped with 0.5% to 5% by weight of other metal components, the other metal components being platinum, titanium, gold , one of copper, chromium or nickel. The low-resistance transparent conductive film of claim 1, wherein a second barrier layer is deposited on a lower surface of the silver mesh layer; the second barrier layer is a nickel metal layer, a chromium metal layer, a titanium metal layer, and a gold metal Layer, copper metal layer, nickel-chromium alloy layer, nickel metal oxide layer, One of a chromium metal oxide layer, a titanium metal oxide layer or a copper metal oxide layer; the second barrier layer has a thickness of 1-10 nm. The low-resistance transparent conductive film according to any one of claims 1 to 5, wherein the transparent conductive film layer is an indium tin oxide film layer, an aluminum-doped zinc oxide film layer, an antimony-doped tin oxide film layer, and a zinc-doped indium oxide film layer. a tin-doped zinc oxide film layer, a molybdenum oxide film layer or a titanium nitride layer. The low-resistance transparent conductive film according to any one of claims 1 to 5, wherein the transparent base film has a thickness of 10 to 70 nm; and the metal mesh film layer has a thickness of 5 to 20 nm; The transparent conductive film layer has a thickness of 10 to 70 nm. A method for preparing a low-resistance transparent conductive film according to any one of claims 1 to 7, comprising the steps of: depositing a transparent base film on the surface of the substrate by a magnetron sputtering process under S1, normal temperature or low temperature; Coating a layer of disordered microsphere mask on the surface of the transparent base film; S3, depositing a metal film on the surface of the transparent base film coated with the microsphere mask by using a normal temperature magnetron sputtering process; S4, removing The microsphere layer mask is used to obtain a metal mesh film layer having a disordered pore structure; S5, under normal temperature or low temperature conditions, a transparent deposition process is performed on the surface of the metal mesh film layer having a disordered pore structure by a magnetron sputtering process. The conductive film layer completes the preparation of the low-resistance transparent conductive film; wherein, in the step S1, the substrate is pre-plated with one or more transparent optical films before depositing the transparent base film; the transparent optical film is cerium oxide A film, a tantalum pentoxide film, a titanium dioxide film or a tantalum nitride film. The method for preparing a low-resistance transparent conductive film according to claim 8, wherein the transparent base film deposited in the step S1 has a thickness of 10 to 70 nm and a visible light refractive index of more than 1.5. The method for preparing a low-resistance transparent conductive film according to claim 8, wherein the microsphere layer mask in step S2 is a disorderly array of monodisperse microspheres. The method for preparing a low-resistance transparent conductive film according to claim 10, wherein the microspheres have a diameter ranging from 100 to 1000 nm; and the surface area coverage of the microspheres on the surface of the transparent base film is 10%-40 %. The method for preparing a low-resistance transparent conductive film according to claim 10, wherein the arrangement of the microspheres in the transparent base film is irregularly distributed in irregular small clusters, and each cluster comprises 1-20 microspheres. The shape and size of each cluster are inconsistent. The width of each cluster does not exceed 1000 nm, and the length of each cluster does not exceed 5000 nm.