KR101689852B1 - Multi-layered transparent electrode comprising grid pattern structure - Google Patents

Multi-layered transparent electrode comprising grid pattern structure Download PDF

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KR101689852B1
KR101689852B1 KR1020150084737A KR20150084737A KR101689852B1 KR 101689852 B1 KR101689852 B1 KR 101689852B1 KR 1020150084737 A KR1020150084737 A KR 1020150084737A KR 20150084737 A KR20150084737 A KR 20150084737A KR 101689852 B1 KR101689852 B1 KR 101689852B1
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layer
oxide layer
transparent electrode
metal layer
pattern structure
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박성주
이효주
송선혜
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광주과학기술원
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Abstract

A multilayer transparent electrode including a grid pattern structure is provided. Specifically, the multilayered transparent electrode includes a lower oxide layer, a metal layer, and a top oxide layer sequentially disposed on a substrate, wherein the lower oxide layer, the metal layer, and the upper oxide layer have a grid pattern Structure. The multilayer transparent electrode can improve the transmittance at a relatively high filling rate of the grid compared to the transparent electrode of the conventional metal grid pattern structure due to the surface plasmon phenomenon and improve the grid visibility. In addition, since the lower oxide layer and the upper oxide layer have a parallel resistance structure, the oxide layer functions as a conduction channel of the metal layer, so that a lower sheet resistance can be realized than a transparent electrode of a metal grid structure having the same thickness.

Description

[0001] MULTI-LAYERED TRANSPARENT ELECTRODE COMPRISING GRID PATTERN STRUCTURE [0002]

The present invention relates to a transparent electrode, and more particularly, to a multilayer transparent electrode including a grid pattern structure.

The transparent electrode refers to an oxide-based degenerate semiconductor electrode having both high light transmittance (at least 80%) and electrical conductivity in the visible light region. Such a transparent electrode can be applied to various optical elements such as solar light, a display, or a light emitting diode.

In general, a high deposition temperature of 300 ° C or more is required to form a high conductivity thin film using indium tin oxide (ITO), which is mainly used as a transparent electrode material. However, in the case of flexible polymer substrates (PET, PEN, PAR and PES), it is difficult to apply a temperature process of 200 ° C or more. Currently, the amorphous ITO film deposited at room temperature is used as a flexible electrode. to be. The amorphous ITO has a higher defect density than that of crystalline ITO and exhibits a high surface resistance, and has a limited durability against bending, which limits application to flexible devices.

As a substitute material for ITO to solve this problem, research on a transparent electrode having a multi-layer structure is underway. The transparent electrode having a multilayer structure is composed of a transparent electrode layer (TCO) / a metal layer (metal) / a transparent electrode layer (TCO), that is, a structure in which a very thin metal is inserted between transparent electrode layers. Since the multilayer transparent electrode is deposited at room temperature, a low surface resistance can be obtained, and high transmittance can be achieved through the surface plasmon phenomenon. However, due to the free electrons in the metal layer, the reflectance in the long wavelength region is high, It has a problem that color can be distorted when applied to a display device such as a panel.

To solve this problem, a transparent electrode technology including a metal layer having a grid pattern structure has been developed. This has the drawback that the metal is separated from the substrate or the grid is short-circuited due to a low bending radius due to the low adhesion to the substrate, which has the feature of improving the distortion of the color, .

Recently, a transparent electrode of a metal grid structure has proposed a method of using a pure metal alone or coating a metal grid with a conductive material such as PEDOT: PSS, ITO or graphene on a metal. However, in the case of a grid structure made of pure metal, a high horizontal resistance exists between the grid intervals to decrease the conductivity. When the conductive material is coated to compensate the conductivity, there is a problem that the permeability decreases. In addition, there is a problem that the metal grid is visible when the metal grid width is 10 μm or more.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a transparent electrode capable of solving the problem of visibility of a metal grid and a phenomenon in which conventional multi-layer transparent electrodes distort color while having high transmittance.

According to an aspect of the present invention, there is provided a semiconductor device including a lower oxide layer, a metal layer, and an upper oxide layer sequentially disposed on a substrate, wherein the lower oxide layer, the metal layer, Layer structure, and the grid pattern structure is formed in a patterned structure.

The lower oxide layer and the upper oxide layer may be composed of an oxide having an energy band gap of 3 eV or more, at least one oxide selected from ZnO, MgZnO, ITO, GIZO, IZTO, AZO, ZTO, NiO and SnO 2 .

The oxide is doped with at least one material selected from aluminum (Al), magnesium (Mg), gallium (Ga), copper (Cu), silver (Ag), tin (Sn), and indium (In) .

The thickness of the upper oxide layer and the lower oxide layer may be 10 nm to 100 nm, respectively.

The metal layer may be composed of at least one metal selected from gold (Au), silver (Ag), platinum (Pt), copper (Cu), aluminum (Al), and two or more alloys thereof.

The thickness of the metal layer may be 10 nm to 100 nm.

The fill factor of the grid pattern structure may be 0.07 to 0.61.

And an antireflection layer on the substrate to fill a space between the lower oxide layer, the metal layer, and the region where the upper oxide layer is formed.

The anti-reflection layer may be composed of at least one material selected from MgF 2 , SiO 2 , SiN x , TiO 2 and MgO.

And a contact resistance reducing layer on the substrate to fill a space between the lower oxide layer, the metal layer, and the region where the upper oxide layer is formed.

The contact resistance reducing layer may be formed of any one of ITO, NiO, WO x , MoO x, and V 2 O x .

The sheet resistance of the multilayered transparent electrode may be 10? / Sq or less and the transmittance may be 90 to 95%.

The multilayer transparent electrode of the present invention can improve the transmittance and improve the grid visibility even at a relatively high filling rate of the grid compared to the transparent electrode of the conventional metal grid pattern structure due to the surface plasmon phenomenon.

In addition, since the lower oxide layer and the upper oxide layer have a parallel resistance structure, the oxide layer functions as a conduction channel of the metal layer, so that a lower sheet resistance can be realized than a transparent electrode of a metal grid structure having the same thickness.

In addition, an oxide layer may be disposed on the upper and lower portions of the metal layer to prevent the oxidation of the metal layer, and to improve adhesion and thermal / chemical stability to the substrate.

The multilayer transparent electrode of the present invention easily adjusts the filling rate, so that the multilayer transparent electrode can be easily deformed out-of-plane and has excellent flexibility.

However, the effects of the present invention are not limited to those mentioned above, and other effects not mentioned can be clearly understood by those skilled in the art from the following description.

1A and 1B are schematic views illustrating a multilayer transparent electrode according to an embodiment of the present invention.
2 is a schematic view illustrating a parallel resistance structure of a multilayer transparent electrode according to an embodiment of the present invention.
3A and 3B are schematic views illustrating a multilayer transparent electrode according to another embodiment of the present invention.
4 is a schematic diagram showing light transmission according to the surface plasmon phenomenon of the metal layer disposed on the multilayer transparent electrode of Example 1 of the present invention.
5 (a) to 5 (b) are schematic diagrams showing the degree of light transmission of the transparent electrodes of Comparative Examples 1 and 1 of the present invention.
Figs. 6 (a) to 6 (b) are graphs showing the comparison of transmittance and sheet resistance according to the thickness of the metal layer of the transparent electrode of the thin film structure of Comparative Example 2 and Comparative Example 3 of the present invention.
7 (a) to 7 (b) are graphs showing transmittance and sheet resistance according to the thicknesses of the metal layers of Example 1 and Comparative Example 1, respectively.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. Rather, the intention is not to limit the invention to the particular forms disclosed, but rather, the invention includes all modifications, equivalents and substitutions that are consistent with the spirit of the invention as defined by the claims.

In the drawings, the thicknesses of the layers and regions may be exaggerated or reduced for clarity. Like reference numerals throughout the specification denote like elements.

The present invention can provide a multilayer transparent electrode including a grid pattern structure. In detail, the multilayer transparent electrode includes a lower oxide layer, a metal layer, and a top oxide layer sequentially disposed on a substrate, wherein the lower oxide layer, the metal layer, and the upper oxide layer have a grid pattern Structure.

1A and 1B are schematic views illustrating a multilayer transparent electrode according to an embodiment of the present invention.

Referring to FIGS. 1A and 1B, the multilayered transparent electrode may be disposed on the substrate 10. The substrate 10 serves as a support on which the multilayer transparent electrodes are disposed, and can use any conventional electrode substrate. For example, the substrate 10 may be formed of glass or polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), polyethylene sulfone (PES), polyimide (PI) A flexible transparent substrate such as polyarylate (PAR), polycyclic olefin (PCO), polymethyl methacrylate (PMMA) or triacetyl cellulose (TAC) It does not.

1A to 1B, a lower oxide layer 100, a metal layer 200, and an upper oxide layer 300, each of which is formed in a grid pattern structure, may be sequentially stacked on the substrate 10. Specifically, the pattern width and the pattern spacing of the lower oxide layer 100, the metal layer 200, and the upper oxide layer 300 formed in the grid pattern structure are all the same, and each of the The lower oxide layer 100, the metal layer 200, and the upper oxide layer 300 may be sequentially stacked to correspond to each other. The pattern width and the pattern spacing of the grid pattern structure may be variously formed according to the filling rate, and are not limited to the grid pattern width and pattern spacing shown in FIGS. 1A to 1B. The substrate 10 has a region in which the lower oxide layer 100, the metal layer 200, and the upper oxide layer 300 are formed in the grid pattern structure and the lower oxide layer, the metal layer, Which is a space between the regions where the upper oxide layer is formed.

Specifically, the lower oxide layer 100 and the upper oxide layer 300 may be formed of an oxide having an energy band gap of 3 eV or more, zinc oxide (ZnO), magnesium zinc oxide (MgZnO), indium tin oxide (ITO ), Gallium-indium-zinc-oxide (GIZO), indium zinc-tin oxide (IZTO), aluminum-doped zinc oxide (AZO) and at least one oxide selected from zinc tin oxide (ZTO), nickel oxide (NiO), and tin oxide (SnO 2 ).

In one embodiment of the present invention, the oxides constituting the lower oxide layer 100 and the upper oxide layer 300 may be aluminum (Al), magnesium (Mg), gallium (Ga), copper (Cu) And may be doped with at least one material selected from silver (Ag), tin (Sn) and indium (In). Doping the oxides constituting the lower oxide layer 100 and the upper oxide layer 300 with the above-described material improves the conductivity and moisture resistance of the lower oxide layer 100 and the upper oxide layer 300 You can expect.

The lower oxide layer 100 and the upper oxide layer 300 may be formed using a conventional oxide deposition method. For example, the surface of the substrate may be formed by a method such as sputtering, chemical vapor deposition (CVD), thermal evaporation, e-beam deposition, spray pyrolysis, A sol-gel process, or the like, but the present invention is not limited thereto.

The thickness of the lower oxide layer 100 and the upper oxide layer 300 may be 10 nm to 100 nm. The lower oxide layer 100 and the upper oxide layer 300 may be formed to have a thickness within the above range to maintain the characteristics of the original oxide layer and to impart flexibility of the entire transparent electrode, And can be utilized for flexible devices.

The metal layer 200 may be disposed between the lower oxide layer 100 and the upper oxide layer 300 to increase the light transmittance of the multilayer transparent electrode through a surface plasmon phenomenon inherent to the metal layer. Generally, surface plasmon refers to the collective behavior of free electrons present on a metal surface. The metal layer 200 may be in ohmic contact with the oxides constituting the lower oxide layer 100 and the upper oxide layer 300 to prevent conduction of the metal layer 200 formed in the grid pattern structure. The characteristics can be improved.

Specifically, the metal layer 200 is made of at least one metal selected from gold (Au), silver (Ag), platinum (Pt), copper (Cu), aluminum . The metal layer 200 can be formed using a conventional metal layer forming method and is not particularly limited.

The thickness of the metal layer 200 may be 10 nm to 100 nm. Specifically, the thickness of the metal layer 200 may be 14 nm to 50 nm. When the thickness of the metal layer 200 is out of the above range, the optical and electrical characteristics are deteriorated, so that the thickness can be formed within the above range. Specifically, this can be explained in detail in the following examples and drawings.

The formation of the lower oxide layer 100, the metal layer 200, and the upper oxide layer 300 in a grid pattern structure may be performed using a lithography method, which is a conventional pattern forming method, It does not. Specifically, for example, after forming an oxide layer in the form of a film on the substrate 10, a grid pattern structure may be formed on the oxide layer in the form of a thin film. Thereafter, the metal layer 200 and the upper oxide layer 300 may be sequentially formed on the lower oxide layer 100 having the grid pattern structure in a grid pattern structure. Alternatively, the lower oxide layer 100, the metal layer 200, and the upper oxide layer 300 may be sequentially laminated in the form of a thin film, and then the lower oxide layer 100, the metal layer 200, and the upper oxide layer 300. In this case,

The fill factor of the grid pattern structure may be 0.001 to 1 or less. Specifically, the filling rate of the grid pattern structure may be 0.07 to 0.61. Specifically, the conductivity of the multilayer transparent electrode including the grid pattern structure of the present invention can be determined by the conductivity characteristics of the grid pattern structure and the filling rate of the grid pattern structure. Specifically, as the filling rate of the grid pattern structure increases, the conductivity increases but the light transmittance decreases. Therefore, the filling rate of the grid pattern structure can be adjusted to be optimized within the above range. Specifically, this can be explained in detail in the following examples and drawings.

2 is a schematic view illustrating a parallel resistance structure of a multilayer transparent electrode according to an embodiment of the present invention. As shown in FIG. 2, in the lower oxide layer / metal layer / upper oxide layer formed by the grid pattern structure of the present invention, the oxide layer and the metal layer can form a parallel resistance structure. In addition, since the lower oxide layer and the upper oxide layer are formed of a conductive oxide capable of ohmic contact with the metal of the metal layer, the lower oxide layer and the upper oxide layer function as conduction channels of the metal layer, It is possible to realize a lower sheet resistance than a transparent electrode of the structure.

Thus, the multilayer transparent electrode of the present invention can realize high conductivity and high transparency characteristics even in a metal layer whose thickness is relatively smaller than that of a transparent electrode of a conventional metal grid pattern structure, thereby reducing manufacturing cost and product yield. In addition, since the oxide layer is disposed on the upper and lower portions of the metal layer, the oxide of the oxide layer can protect the metal layer, thereby preventing the electrical characteristics of the metal layer from being degraded. In addition, adhesion and thermal / chemical stability to the substrate can be improved due to the above-described structural features. In addition, the filling rate can be easily controlled, and a transparent electrode having flexibility can be realized because it can be deformed by a touch while maintaining excellent adhesion with a substrate.

In another embodiment of the present invention, the multilayer transparent electrode may further include an antireflection layer on the substrate to fill a space between the lower oxide layer, the metal layer, and the region where the upper oxide layer is formed. The antireflection layer may be made of an antireflection material capable of increasing the transmittance of the multilayer transparent electrode. The antireflection layer may be formed of an antireflective material having a refractive index between the substrate and the refractive index of air existing on the substrate. . This is as shown in the following equation (1).

Figure 112015057739450-pat00001
(1)

In the above formula (1), n 0 is the refractive index of the substrate, n 1 is the refractive index of the antireflection layer, and n 2 is the refractive index of air, n 2 .

Further, the thickness of the antireflection layer can minimize the reflectivity at 1/4 of the wavelength.

In one embodiment of the present invention, the anti-reflection layer may be formed of at least one material selected from MgF 2 , SiO 2 , SiN x , TiO 2, and MgO.

By increasing the light transmission amount in the region where the grid pattern structure is not formed by the antireflection layer, the transmittance of the entire transparent electrode can be improved.

In another embodiment of the present invention, the multilayered transparent electrode may further include a contact resistance reducing layer on the substrate to fill a space between the regions where the lower oxide layer, the metal layer, and the upper oxide layer are formed . The contact resistance reducing layer may be formed of a conductive material capable of increasing the sheet resistance of the multilayer transparent electrode and a material having a large work function. Specifically, the contact resistance reducing layer may be formed of any one of ITO, NiO, WO x , MoO x, and V 2 O x . Here, X may be an integer of 1 to 10. The electrical characteristics of all the transparent electrodes can be further improved by the contact resistance reducing layer disposed in the region where the grid pattern structure is not formed.

3A and 3B are schematic views illustrating a multilayer transparent electrode according to another embodiment of the present invention.

3A and 3B, the multilayered transparent electrode is formed on the substrate 10 in a region where the lower oxide layer 100, the metal layer 200, and the upper oxide layer 300 are not disposed, The anti-reflection layer or the contact resistance reducing layer 400 may be disposed. The anti-reflection layer or the contact resistance reducing layer 400 may be formed to have a thickness within a total thickness of the lower oxide layer 100, the metal layer 200, and the upper oxide layer 300 formed in a grid pattern structure have.

As described above, a functional material layer (not shown) such as the antireflection layer or the contact resistance reducing layer 400 is formed on the substrate in an open region of the substrate, which is a space between the regions where the lower oxide layer, the metal layer and the upper oxide layer are formed. The transmittance and electrical characteristics of the entire transparent electrode can be further improved. This is because the multilayer transparent electrode including the grid pattern structure of the present invention can maintain the transparency and the sheet resistance excellent even when the filling rate of the grid pattern structure changes. Therefore, by adjusting the filling rate of the grid pattern structure, It is possible to arrange the functional material layer such as the antireflection layer or the contact resistance reducing layer 400 that can further improve the electrical characteristics of the transparent electrode in the open area. In addition, the spacing space between the areas where the grid pattern structure is formed can distribute the stress to the external deformation, so that it can have more flexibility than the conventional thin film type multilayer transparent electrode.

The sheet resistance of the multilayered transparent electrode may be 10? / Sq or less and the transmittance may be 90 to 95%. Specifically, this can be explained in detail in the following examples and drawings.

Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the scope of the present invention is not limited to the following examples.

[Example]

Example 1: Multi-layer transparent electrode including grid pattern structure

An oxide thin film was formed on the glass substrate using MgZnO as an oxide layer material, and then the oxide thin film was formed into a grid pattern structure by photolithography. Then, silver (Ag) was deposited on the MgZnO layer of the grid pattern structure to form a metal layer having a grid pattern structure. Thereafter, MgZnO was deposited again on the metal layer to form a multilayer transparent electrode in the form of an oxide layer / metal layer / oxide layer (MgZnO / Ag / MgZnO) having a grid pattern structure.

Comparative Example 1: A transparent electrode containing only a metal layer of a grid pattern structure

All the process conditions were the same except that an oxide layer composed of MgZnO was formed on the upper and lower sides of the metal layer in Example 1 to fabricate a transparent electrode containing only the metal layer of the grid pattern structure.

Comparative Example 2: Thin film-type multilayer transparent electrode

In the same manner as in Example 1 except that the lower oxide layer, the metal layer, and the upper oxide layer were formed into a thin film rather than a grid pattern structure, all the process conditions were the same to produce a multilayer transparent electrode in the form of a thin film .

Comparative Example 3: A transparent electrode containing only a thin metal layer

Except that an oxide layer composed of MgZnO was formed on the upper and lower sides of the metal layer in Example 1 and a metal pattern was formed in a grid pattern structure in all of the process conditions to form a transparent Electrode.

4 is a schematic diagram showing light transmission according to the surface plasmon phenomenon of the metal layer disposed on the multilayer transparent electrode of Example 1 of the present invention.

Referring to FIG. 4, a metal layer (silver (Ag)) having a surface plasmon effect is disposed between a lower oxide layer and an upper oxide layer to form incident light and surface plasmon The resonance coupling between the incident light and the incident light can be coupled to reduce the amount of reflection of the incident light on the metal surface. In addition, when the plasmon resonance phenomenon is decoupled, the incident light can transmit the metal thin film, thereby improving the light transmission of the transparent electrode. In addition, when the lower oxide layer and the upper oxide layer are formed of an oxide having the same refractive index as in Embodiment 1 of the present invention, since the plasmon resonance wavelength can be the same at both interfaces of the oxide layer and the metal layer, The amount of light can be increased to the maximum.

5 (a) to 5 (b) are schematic diagrams showing the degree of light transmission of the transparent electrodes of Comparative Examples 1 and 1 of the present invention. 5 (a) shows a transparent electrode including a metal layer of the grid pattern structure of Comparative Example 1, where the light transmittance was reduced where the metal layer of the grid pattern structure was formed, and the transparent electrode of Comparative Example 1 had a visibility problem Can be deduced.

In contrast, the transparent electrode of Example 1 shown in Fig. 5 (b) did not significantly decrease the light transmittance even where the lower oxide layer / the metal layer / the upper oxide layer of the grid pattern structure were arranged, It can be confirmed that the light transmittance is increased. It can be seen that the light transmittance is improved due to the surface plasmon phenomenon of the metal layer disposed between the oxide layers, as described above with reference to FIG.

As described above, the multi-layer transparent electrode having the grid pattern structure of the present invention can solve the visibility problem of the transparent electrode of the conventional metal grid pattern structure, and due to its high light transmittance in the visible region, It is expected to be utilized effectively.

Figs. 6 (a) to 6 (b) are graphs showing the comparison of transmittance and sheet resistance according to the thickness of the metal layer of the transparent electrode of the thin film structure of Comparative Example 2 and Comparative Example 3 of the present invention.

6 (a), in the case of the comparative example 3 (Ag (x nm)), when the thickness of the metal layer made of silver (Ag) is 14 nm, the transmittance with respect to visible light at 550 nm is about 60% It can be confirmed that the transmittance decreases as the transmittance increases. On the other hand, in the case of the comparative example 2 (MgZnO / Ag (x nm) / MgZnO), when the thickness of the metal layer made of silver (Ag) was 14 nm, the transmittance to visible light of 550 nm was about 90% High transmittance can be obtained. However, it can be confirmed that as the thickness of the metal layer of Comparative Example 2 becomes thicker from 14 nm to 50 nm, the light transmittance becomes lower. This is considered to be because the degree of reflectivity is increased by the free electrons in the metal as the thickness of the metal layer is increased.

6 (b), when the thickness of the metal layer is 14 nm, the sheet resistance of the transparent electrode of Comparative Example 2 is somewhat higher than that of Comparative Example 3, but the sheet resistance of Comparative Example 3 and Comparative Example 2 It is confirmed that the difference in sheet resistance between the two layers decreases. In addition, when the thickness of the metal layer is 30 nm or more, the sheet resistance is almost the same. When the thickness of the metal layer is increased to 50 nm or more, the sheet resistance of the comparative example 3 and the comparative example 2, Which is similar to the surface resistance of

7 (a) to 7 (b) are graphs showing transmittance and sheet resistance according to the thicknesses of the metal layers of Example 1 and Comparative Example 1, respectively. Specifically, the transmittance and sheet resistance according to the thickness of the metal layer of Example 1 shown in Fig. 7 (a) are shown in Table 1 below.

Metal layer thickness (nm) 14 20 25 30 50 Filling rate 0.52 0.24 0.19 0.13 0.07 Sheet resistance (Ω / sq) 9.2 10 10.5 11 8 Transmittance (%) 94.7 95.1 94.2 94.2 94.5

Referring to Table 1, the multilayer transparent electrode having the grid pattern structure of Example 1 can maintain the same sheet resistance and transmittance by adjusting the filling factor (interval between grid patterns) even if the thickness of the metal layer is increased.

The transmittance and sheet resistance of Example 1 and Comparative Example 1 when the metal layer is 14 nm as shown in Figs. 7 (a) to 7 (b) are shown in Table 2 below.

Thickness of metal layer (Ag): 14 nm Example 1 Comparative Example 1 Transmittance (%) 93.8 77.4 Fill factor 0.61 0.61 Sheet resistance (Ω / sq) 7.82 6

The transmittance and the sheet resistance of the metal layer of Example 1 and Comparative Example 1 in the case where the thickness (14 nm) and the filling factor (0.61) of the multilayer transparent electrode of Example 1 are the same are shown in Table 2, 1, 16.4%, and the sheet resistance is similar. Referring to FIG. 7, unlike Comparative Example 1, in the transparent electrode of Example 1, even when the thickness of the metal layer is increased, the behavior of the sheet resistance and the transmittance are almost in the same line. Can be easily controlled.

On the other hand, the sheet resistance and transmittance in the case where the thickness of the metal layer of the transparent electrode of Comparative Example 1 shown in Fig. 7 (b) is 50 nm are shown in Table 3 below. Referring to the following Table 3, it can be seen that the transparent electrode including only the metal layer having the grid pattern structure of Comparative Example 1 should have a thick metal layer to obtain high conductivity, and the filling rate should be adjusted within the optimum range. The present invention improves the transparent electrode including only the metal layer of the conventional grid pattern structure. Even if the thickness of the metal layer is increased, the sheet resistance and transmittance can be kept excellent by controlling the filling factor.

Thickness of metal layer (nm) 50 Filling rate 0.07 Sheet resistance (Ω / sq) 9.1 Transmittance (%) 93.7

Table 4 below shows the results of spectrophotometer measurement of the multilayer transparent electrodes of Comparative Example 2 and Example 1.

division optics L * a * b * Comparative Example 2 27 10 4 Example 1 94.6 -1.6 -1.1

Referring to Table 4, it can be seen that the multilayer transparent electrode of the grid pattern structure of Example 1 of the present invention has achromatic color in the L * a * b * color system compared to the multilayer transparent electrode of the thin film type of Comparative Example 2 have.

It should be noted that the embodiments of the present invention disclosed in the present specification and drawings are only illustrative of specific examples for the purpose of understanding and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

10: substrate 100: lower oxide layer
200: metal layer 300: upper oxide layer
400: antireflection layer or contact resistance reducing layer

Claims (12)

A lower oxide layer, a metal layer and a top oxide layer sequentially disposed on the substrate,
Wherein the lower oxide layer, the metal layer, and the upper oxide layer are formed in a grid pattern structure corresponding to each other,
The thickness of the metal layer is from 14 nm to 50 nm,
Wherein the filling ratio of the grid pattern structure is 0.07 to 0.61. The method according to claim 1,
Wherein the lower oxide layer and the upper oxide layer are formed of a single-
ZnO, MgZnO, ITO, GIZO, IZTO, AZO, ZTO, multi-layer transparent electrode for a touch panel display device including a grid pattern structure of said at least consisting of one of an oxide selected from NiO and SnO 2. 3. The method of claim 2,
Preferably,
And is doped with at least one material selected from aluminum (Al), magnesium (Mg), gallium (Ga), copper (Cu), silver (Ag), tin (Sn) and indium (In) A multilayer transparent electrode for a touch panel display device comprising a pattern structure. The method according to claim 1,
Wherein the upper oxide layer and the lower oxide layer have a thickness of 10 nm to 100 nm, respectively. The method according to claim 1,
Wherein the metal layer is formed of at least one metal selected from gold (Au), silver (Ag), platinum (Pt), copper (Cu), aluminum (Al), and two or more alloys thereof. Wherein the transparent electrode is a transparent electrode. delete delete The method according to claim 1,
Further comprising an antireflection layer on the substrate, the antireflection layer filling a space between the lower oxide layer, the metal layer, and the region where the upper oxide layer is formed, the multilayer transparent electrode for a touch panel display device . 9. The method of claim 8,
Wherein the antireflection layer is made of at least one material selected from MgF 2 , SiO 2 , SiN x , TiO 2, and MgO. The method according to claim 1,
Further comprising a contact resistance reducing layer on the substrate, the contact resistance reducing layer filling a space between the lower oxide layer, the metal layer, and the region where the upper oxide layer is formed. Transparent electrode. 11. The method of claim 10,
Wherein the contact resistance reducing layer is made of any one material selected from the group consisting of ITO, NiO, WO x , MoO x, and V 2 O x . The method according to claim 1,
Wherein the transmittance of the multi-layer transparent electrode for the touch panel display device is 90% to 95%.
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